ULTRA LOW CISS JFET Search Results

ultra low igss pA

Abstract: ultra low igss LS831 LS830 LS832 LS833
Contextual Info: LS830 LS831 LS832 LS833 ULTRA LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES ULTRA LOW DRIFT |∆VGS1-2 /∆T|= 5µV/°C max. ULTRA LOW LEAKAGE IG = 80fA TYP. LOW NOISE en= 70nV/√Hz TYP. LOW CAPACITANCE CISS= 3pf MAX.

ultra low igss pA mosfet

Abstract: jfet transistor 2n4391 "DUAL N-Channel JFET" ultra low Ciss jfet sstpad100 "spice" 2n4416 transistor spice jfet n channel ultra low noise 2N44 Ultra High Input Impedance N-Channel JFET Amplifier 2n3955 transistor spice
Contextual Info: LS830 LS831 LS832 LS833 ULTRA LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES ULTRA LOW DRIFT |∆VGS1-2 /∆T|= 5µV/°C max. ULTRA LOW LEAKAGE IG = 80fA TYP. LOW NOISE en= 70nV/√Hz TYP. LOW CAPACITANCE CISS= 3pf MAX.

ultra low igss pA

Contextual Info: LS830 LS831 LS832 LS833 ULTRA LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET FEATURES ULTRA LOW DRIFT │ΔVGS1-2/ΔT│= 5µV/ºC max. ULTRA LOW NOISE IG=80fA TYP. LOW NOISE en=70nV/√Hz TYP. LOW CAPACITANCE CISS=3pf max. ABSOLUTE MAXIMUM RATINGS NOTE 1

Contextual Info: LS830 LS831 LS832 LS833 ULTRA LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET FEATURES VGS1-2/ T = 5µV/ºC max. ULTRA LOW DRIFT ULTRA LOW NOISE IG=80fA TYP. LOW NOISE en=70nV/√Hz TYP. LOW CAPACITANCE CISS=3pf max. ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted

Contextual Info: LSK189 LOW NOISE, LOW CAPACITANCE SINGLE N-CHANNEL JFET FEATURES ULTRA LOW NOISE en = 1.8V/√Hz LOW INPUT CAPACITANCE ABSOLUTE MAXIMUM RATINGS @ 25 °C unless otherwise stated CISS = 4pF 1 TO 92 TOP VIEW SOT-23 TOP VIEW Maximum Temperatures Storage Temperature

Contextual Info: LSK489 LOW NOISE, LOW CAPACITANCE MONOLITHIC DUAL N-CHANNEL JFET FEATURES ULTRA LOW NOISE en = 1.8nV/√Hz LOW INPUT CAPACITANCE Ciss = 4pF Features Benefits •       Reduced Noise due to process improvement Monolithic Design High slew rate

ls846

Contextual Info: LS846 LOW NOISE, LOW LEAKAGE SINGLE N-CHANNEL JFET FEATURES ULTRA LOW NOISE en = 3nV/√Hz LOW INPUT CAPACITANCE ABSOLUTE MAXIMUM RATINGS @ 25 °C unless otherwise stated CISS = 4pF 1 SOT-23 TOP VIEW Maximum Temperatures Storage Temperature -55 to +150°C

Contextual Info: LS846 LOW NOISE, LOW LEAKAGE SINGLE N-CHANNEL JFET FEATURES ULTRA LOW NOISE en = 3nV/√Hz LOW INPUT CAPACITANCE ABSOLUTE MAXIMUM RATINGS @ 25 °C unless otherwise stated CISS = 4pF 1 SOT-23 TOP VIEW Maximum Temperatures Storage Temperature -55 to +150°C

LSK489

Abstract: LSK186 lsk 489 amelco
Contextual Info: LSK489 LOW NOISE, LOW CAPACITANCE MONOLITHIC DUAL N-CHANNEL JFET FEATURES ULTRA LOW NOISE en = 1.5nV/√Hz LOW INPUT CAPACITANCE Ciss = 4pF Features Benefits •       Reduced Noise due to process improvement Monolithic Design High slew rate

LSK489

Contextual Info: LSK489 LOW NOISE, LOW CAPACITANCE MONOLITHIC DUAL N-CHANNEL JFET FEATURES ULTRA LOW NOISE en = 1.8nV/√Hz LOW INPUT CAPACITANCE Ciss = 4pF Features Benefits •       Reduced Noise due to process improvement Monolithic Design High slew rate

LSK186

Contextual Info: LSK489 LOW NOISE, LOW CAPACITANCE MONOLITHIC DUAL N-CHANNEL JFET FEATURES ULTRA LOW NOISE en = 1.8nV/√Hz LOW INPUT CAPACITANCE Ciss = 4pF Features Benefits •       Reduced Noise due to process improvement Monolithic Design High slew rate

SD411

Abstract: XSD411
Contextual Info: N-Channel Enhancement Mode Dual DMOS FET CORPORATION SD411 FEATURES • Normally "OFF" Configuration • High Speed Switching. . . . . . . . . . under 1 ns typically Low Capacitance . . . . . . . . . ciss <3.5 pf (typically) • Ultra • Tight Matching Characteristics

Contextual Info: LS832 MONOLITHIC DUAL N-CHANNEL JFET Linear Systems Ultra Low Leakage Low Drift Monolithic Dual JFET The LS832 is a high-performance monolithic dual JFET featuring extremely low noise, tight offset voltage and low drift over temperature specifications, and is

Contextual Info: LS832 MONOLITHIC DUAL N-CHANNEL JFET Linear Systems Ultra Low Leakage Low Drift Monolithic Dual JFET The LS832 is a high-performance monolithic dual JFET featuring extremely low noise, tight offset voltage and low drift over temperature specifications, and is

Contextual Info: LS831 MONOLITHIC DUAL N-CHANNEL JFET Linear Systems Ultra Low Leakage Low Drift Monolithic Dual JFET The LS831 is a high-performance monolithic dual JFET featuring extremely low noise, tight offset voltage and low drift over temperature specifications, and is

70nV

Contextual Info: LS831 MONOLITHIC DUAL N-CHANNEL JFET Linear Systems Ultra Low Leakage Low Drift Monolithic Dual JFET The LS831 is a high-performance monolithic dual JFET featuring extremely low noise, tight offset voltage and low drift over temperature specifications, and is

Contextual Info: LS830 MONOLITHIC DUAL N-CHANNEL JFET Linear Systems Ultra Low Leakage Low Drift Monolithic Dual JFET The LS830 is a high-performance monolithic dual JFET featuring extremely low noise, tight offset voltage and low drift over temperature specifications, and is

Contextual Info: LS830 MONOLITHIC DUAL N-CHANNEL JFET Linear Systems Ultra Low Leakage Low Drift Monolithic Dual JFET The LS830 is a high-performance monolithic dual JFET featuring extremely low noise, tight offset voltage and low drift over temperature specifications, and is

Contextual Info: LS843 LS844 LS845 ULTRA LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET FEATURES ULTRA LOW NOISE en=3nV/Hz TYP. LOW LEAKAGE IG=15pA TYPs. LOW DRIFT I VGS1-2/TI=5µV/ºC max. ULTRA LOW OFFSET VOLTAGE IVGS1-2I=1mV max. ABSOLUTE MAXIMUM RATINGS SOIC-A TO-71

LS845

Contextual Info: LS843 LS844 LS845 ULTRA LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET FEATURES ULTRA LOW NOISE en=3nV/Hz TYP. LOW LEAKAGE IG=15pA TYPs. LOW DRIFT I VGS1-2/TI=5µV/ºC max. ULTRA LOW OFFSET VOLTAGE IVGS1-2I=1mV max. ABSOLUTE MAXIMUM RATINGS SOIC-A TO-71

FET U310

Abstract: U310 fet mosfet 2n4351 low noise low frequency JFET j174 LS312 equivalent N-CHANNEL LOW NOISE AMPLIFIER j177 equivalent transistor 10mA JFET
Contextual Info: U/J/SST308 SERIES SINGLE N-CHANNEL HIGH FREQUENCY JFET Linear Integrated Systems FEATURES Direct Replacement For SILICONIX U/J/SST308 SERIES OUTSTANDING HIGH FREQUENCY GAIN Gpg = 11.5dB LOW HIGH FREQUENCY NOISE J SERIES NF = 2.7dB TO-92 BOTTOM VIEW TO-18 BOTTOM VIEW

ultra low igss pA

Abstract: electrometer U421 U422 U423 U426 TO78 package U421-U426 g1d1
Contextual Info: N-Channel Dual JFET CORPORATION U421 – U426 FEATURES • Ultra Low Input Bias Current . . . . . . . 250 Fempto Amps • Low Operating Current • Tight Matching Characteristics APPLICATIONS Low Leakage FET Input Op Amps • Ultra • Electrometer • Infrared Detectors

ultra low igss pA

Abstract: LS845 LS843 LS844 MONOLITHIC DUAL N-CHANNEL JFET SSG11
Contextual Info: LS843 LS844 LS845 ULTRA LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES ULTRA LOW NOISE en= 3nV/√Hz TYP. LOW LEAKAGE IG = 15pA TYPs. LOW DRIFT |∆VGS1-2 /∆T|= 5µV/°C max. ULTRA LOW OFFSET VOLTAGE ABSOLUTE MAXIMUM RATINGS NOTE 1

LSK170A

Abstract: LSK170 LSK170C LSK170B replacement 2sk170 2SK170 2SK170 to92 LSK389 equivalent n-channel JFET sot23 jfet n channel ultra low noise
Contextual Info: LSK170 ULTRA LOW NOISE SINGLE N-CHANNEL JFET Linear Integrated Systems FEATURES ULTRA LOW NOISE f = 1kHz en = 0.9nV/√Hz HIGH BREAKDOWN VOLTAGE BVGSS = 40V max HIGH GAIN Yfs = 22mS (typ) HIGH INPUT IMPEDANCE IG = -500pA max LOW CAPACITANCE IMPROVED SECOND SOURCE REPLACEMENT FOR 2SK170