UHF TRANSISTORS Search Results

bf679

Abstract: BF680 BF 679 75176 PD 680 820Q
Contextual Info: BF 679 • BF 680 Silizium-PNP-HF-T ransistoren Silicon PNP RF Transistors Anwendungen: BF 679: Regelbare UHF/VHF-Elngangsstufein BF 680: UHF/VHF-Oszillator und M ischerstufen Applications: BF 679: Gain controlled UHF/VHF input stages BF 680: UHF/VHF-Oscillator and m ixer stages

TPV3100

Abstract: TP3024A HF power amplifier TPV3100 PT9783 MRF466 mrf4070 tp9383 tp2304 mrf433 MRF492A
Contextual Info: TABLE OF CONTENTS INTRODUCTION iii GENERAL INFORMATION iv QUALITY ASSURANCE & RELIABILITY v PRODUCT INDEX Alphanumeric vi RF POWER TRANSISTORS ! ! ! ! ! ! ! ! ! ! ! HF SSB HF MOSFETS VHF VHF & UHF MOSFETS UHF UHF MILITARY PULSED AVIONICS PULSED RADAR CW MICROWAVE

Motorola transistors MRF646

Abstract: Mrf648 Motorola transistors MRF648 MRF646 MRF648 applications MRF754 MRF846 MRF839 MRF515 MRF644
Contextual Info: RF PRODUCTS — BIPOLAR POWER TRANSISTORS continued <C^, TO-22Q 333-03 UHF Applications (continued) 317-01 407-512 MHz, UHF FM Transistors Higher power output devices in this UHF power transistor series feature internally input-matched construction, are designed

2N3798

Contextual Info: 2N3798 Bipolar PNP UHF/Microwave Transisitor 7.50 Transistors UHF. 1 of 1 Home Part Number: 2N3798 Online Store 2N3798 Diodes Bipo lar PNP UHF / M icro w av e Trans is it o r Transistors Enter code INTER3 at

2N3546

Contextual Info: 2N3546 Bipolar PNP UHF/Microwave Transisitor 6.98 Transistors UHF. 1 of 1 Home Part Number: 2N3546 Online Store 2N3546 Diodes Bipo lar PNP UHF / M icro w av e Trans is it o r Transistors Enter code INTER3 at

Contextual Info: 2N4207 Bipolar PNP UHF/Microwave Transisitor 1.70 Transistors UHF. 1 of 1 Home Part Number: 2N4207 Online Store 2N4207 Diodes Bipo lar PNP UHF / M icro w av e Trans is it o r Transistors Enter code INTER3 at

2N4122

Abstract: UHF UHF Transistors
Contextual Info: 2N4122 Bipolar PNP UHF/Microwave Transisitor 5.74 Transistors UHF. 1 of 1 Home Part Number: 2N4122 Online Store 2N4122 Diodes Bipo lar PNP UHF / M icro w av e Trans is it o r Transistors Enter code INTER3 at

1N32

Contextual Info: 1N32 General Purpose UHF/MW Detector Diode 30.00 Diodes UHF/Microwave Detecto. Page 1 of 3 4/12/2010 1N32 General Purpose UHF/MW Detector Diode 30.00 Diodes UHF/Microwave Detecto. Page 2 of 3 Home Online Store

Contextual Info: DISCRETE SEMICONDUCTORS BLF2047L; BLF2047SL UHF power LDMOS transistors P relim inary specification Philips Sem iconductors 1999 A p r 02 PHILIPS Philips Semiconductors Preliminary specification UHF power LDMOS transistors BLF2047L; BLF2047SL PINNING FEATURES

2SC2759

Contextual Info: NEC SILICON TRANSISTORS ELECTRON DEVICE 2 S C 2 7 5 9 ,2 S C 2 7 5 9 R UHF/VHF MIXER, UHF OSCILLATOR NPN SILICON EPITAXIAL TRANSISTOR The 2SC2759, 2SC2759R are specially designed fo r use as V H F and UHF PACKAGE DIMENSIONS m ixer and UH F oscillators in a tuner o f T V receiver.

SD2904

Abstract: SD2921 SD2922 SD4013 M113 SD2900 SD2902 SD2903
Contextual Info: SILICON POWER TRANSISTORS VHF/UHF TRANSISTORS Broadband, gold metallized transistors are characterized for UHF military communications and other wideband applications. Hi-rel screening and qualification testing is available as on all SGS-THOMSON Microelectronics RF &

RF power transistors cross reference

Abstract: SD1470 M176 SD2903 uhf transistors
Contextual Info: SILICON POWER TRANSISTORS VHF/UHF TRANSISTORS Broadband, gold metallized transistors are characterized for UHF military communications and other wideband applications. Hi-rel screening and qualification testing is available as on all SGS-THOMSON Microelectronics RF &

Contextual Info: BGY48A MAINTENANCE TYPE _ UHF AMPLIFIER MODULE UHF amplifier module designed for use in portable transmitters operating from a 9.6 V electrical supply. The module is a three-stage amplifier consisting of bipolar silicon npn transistors and lumped

X200C

Abstract: SD4100
Contextual Info: SILICON POWER TRANSISTORS UHF TV/LINEAR TRANSISTORS SGS-THOMSON UHF TV/Linear transistors are specifically designed for television broadcast transmitters requiring ultra high linearity. Refractory/gold metallization is employed for maximum device ruggedness and high efficiency microwave

Motorola UHF Power Amplifier Module

Abstract: motorola power fet rf MHW2820-1 MHW2820 MOTOROLA RF MODULE Motorola 406 W806 motorola rf power module
Contextual Info: Order this document by MHW2820/D MHW2820-1 Advance Information UHF Silicon FET Power Amplifier UHF POWER AMPLIFIER 20 W, 806 to 870 MHz This device is designed for 12.5 V UHF power amplifier applications in industrial and commerical FM equipment operating from 806 to 870 MHz.

power transistors cross reference

Abstract: TSD4200 TCC596 tcc593 M119 M122 SD1448 SD1489 SD1490 SD1492
Contextual Info: SILICON POWER TRANSISTORS UHF TV/LINEAR TRANSISTORS SGS-THOMSON UHF TV/Linear transistors are specifically designed for television broadcast transmitters requiring ultra high linearity. Refractory/gold metallization is employed for maximum device ruggedness and high efficiency microwave

SD1470

Abstract: M168 2n3733 M111 M137 SD4013 M122 S042 SD1050 SD1060
Contextual Info: SILICON POWER TRANSISTORS VHF/UHF TRANSISTOR! Broadband, gold metallized transistors are characterized for UHF military communications and other wideband applications in the 100 - 500 MHz and 500 - 1000 MHz frequency ranges. Hi-rel screening and qualification testing

GP113

Abstract: BLF2022-90 BLF2022S-90 MBL105
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D379 M3D461 BLF2022-90; BLF2022S-90 UHF power LDMOS transistors Product specification Supersedes data of 2003 June 13 2003 Sep 30 Philips Semiconductors Product specification UHF power LDMOS transistors BLF2022-90; BLF2022S-90

2N4957 JANTX

Contextual Info: 2N4957 Available on commercial versions Qualified Levels: JAN, JANTX, and JANTXV PNP Silicon VHF-UHF Amplifier Transistors Qualified per MIL-PRF-19500/426 DESCRIPTION The 2N4957 is a military qualified silicon PNP amplifier transistor designed for VHF-UHF

2SC1365

Abstract: NE741 2sc1252 74113 NE74100
Contextual Info: NE74100 NE74113 NE74114 NPN MEDIUM POWER UHF-VHF TRANSISTOR FEATURES_ DESCRIPTION • HIGH GAIN BANDWIDTH PRODUCT: fT = 1.7 GHz The NE741 series of NPN epitaxial silicon transistors is designed for wide bandwidth UHF and VHF amplifiers. Its low

XM122

Contextual Info: SFJIIIS SILICON POWER TRANSISTORS UHF TV/LINEAR TRANSISTORS SGS-THOMSON UHF TV/Linear transistors are specifically designed for television broadcast transmitters requiring ultra high linearity. Refractory/gold metallization is employed for maximum device ruggedness and high efficiency microwave

UT-090C-25

Abstract: BLF888 DVB-T Schematic dvb-t transmitters DVB-T transistor amplifier DVB-T2 DVB-T Terrestrial Schematic C4532X7R1E475MT020U dvb-t transmitter AN10869
Contextual Info: AN10869 Broadband DVB-T UHF power amplifier with the BLF888 Rev. 01 — 25 May 2010 Application note Document information Info Content Keywords BLF888, DVB-T, UHF broadcast Abstract This application note describes the design and performance of a DVB-T UHF power amplifier using the BLF888.

1N830A

Contextual Info: 1N830A General Purpose UHF/MW Detector Diode 42.50 Diodes UHF/Microwave Dete. Page 1 of 1 Enter Your Part # Home Part Number: 1N830A Online Store 1N830A Diodes General Purpose UH F/MW Detector Diode Transistors Integrated Circuits Optoelectronics Thyristors

MHW2820-1

Abstract: MHW2820 motorola rf power module
Contextual Info: Order this document by MHW2820/D M O TO R O LA Advance Information UHF Silicon FET Power A m plifier This device is designed for 12.5 V UHF power amplifier applications in industrial and commerical FM equipm ent operating from 806 to 870 MHz. UHF POWER AMPLIFIER