UHF TRANSISTORS Search Results

bf679

Abstract: BF680 BF 679 75176 PD 680 820Q
Contextual Info: BF 679 • BF 680 Silizium-PNP-HF-T ransistoren Silicon PNP RF Transistors Anwendungen: BF 679: Regelbare UHF/VHF-Elngangsstufein BF 680: UHF/VHF-Oszillator und M ischerstufen Applications: BF 679: Gain controlled UHF/VHF input stages BF 680: UHF/VHF-Oscillator and m ixer stages

SN 74114

Abstract: 2SC1365 ta 5732 2SC1252 s735 NE74113
Contextual Info: NE74100 NE74113 NE74114 NPN MEDIUM POWER UHF-VHF TRANSISTOR FEATURES DESCRIPTION The NE741 series of NPN epitaxial silicon transistors is designed for wide bandwidth UHF and VHF amplifiers. Its low distortion and noise figures make it an excellent choice for

Contextual Info: MS1480 RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS Features • • • • • 470 MHz 12.5 VOLTS POUT = 50 W GP = 5.0 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1480 is an epitaxial silicon NPN planar transistor designed primarily for 12.5 V Class C UHF communications.

MHW2821-1

Abstract: 81 210 W 20 MHW2821 MHW2821-2 Motorola UHF Power Amplifier Module motorola application note amplifier power
Contextual Info: Order this document by MHW2821/D MHW2821-1 MHW2821-2 UHF Silicon FET Power Amplifiers Designed for 12.5 V UHF power amplifier applications in industrial and commercial FM equipment operating from 806 to 950 MHz. • Specified 12.5 V Characteristics: RF Input Power: ≤250 mW MHW2821–1

433MHz saw Based Transmitter Schematic

Abstract: RF2516 audio video uhf transmitter circuit circuit diagram of wireless door lock system RF2516PCBA-410 Transmitter with SAW-based Oscillator SiGe Flip-Flop VHF transmitter circuit CAS-120B SMV1249-011
Contextual Info: RF2516 RF2516 VHF/UHF Transmitter VHF/UHF TRANSMITTER „ „ „ „ „ „ „ „ 315/433MHz Band Systems Local Oscillator Source Part 15.231 Applications Remote Keyless Entry Wireless Security Systems AM/ASK/OOK Transmitter LOOP FLT OSC E OSC B 2 1 Phase Detector &

Contextual Info: micro electro nics group Data Sheet May 1996 Lucent Technologies Bell Labs Innovations ALA210 UHF Semicustom Linear Array Features Description • High-speed CBIC process: 4.5 GHz NPN, 3.75 GHz PNP The ALA210 UHF Semicustom Linear Arrays is an integrated circuit consisting of vertical NPN and PNP

2SC3773

Abstract: SANYO SS 1001
Contextual Info: SANYO SEMICONDUCTOR CORP 25E D 7 ‘1c1 7 0 7 b 0 0 G b_ö3 1 T T -3/ -/7 2SC3773 NPN Epitaxial Pianar Silico n Transistor 2018A UHF OSC, MIX, Low-Noise Wide-Band Amp Applications 1946B Applications . UHF frequency converters, local oscillators, low-noise amplifiers, wide-band

RoHS sliding Gate Opener F - 500

Contextual Info: RF2516 RF2516 VHF/UHF Transmitter VHF/UHF TRANSMITTER „ „ 8 „ „ RESNTR- LOOP FLT OSC E OSC B 15 16 PD Functional Block Diagram Product Description The RF2516 is a monolithic integrated circuit intended for use as a lowcost AM/ASK transmitter. The device is provided in a 16-pin QSOP-16

Zener Diode ph 4148

Abstract: ph 4148 zener diode zener PH 4148 CJ 4148 ZENER PH SMD SAW101 eurosil RF transmitter 433.92 u4314b CJ 4148 zener diode
Contextual Info: Tem ic S e m i c o n d u c t o r s UHF Remote Control System: Receiver Front End and Complete Receiver Design Hints Introduction This report is a description on how to develop a costsaving superhet receiver for radio-frequency-based remote control systems in the UHF range. It should be

Capacitor 1000uF

Abstract: ut-141 M102 SD1565
Contextual Info: SD1565 RF & MICROWAVE TRANSISTORS UHF PULSED APPLICATIONS . . . . . 500 WATTS @ 250µSec PULSE WIDTH, 10% DUTY CYCLE REFRACTORY GOLD METALLIZATION EMITTER BALLASTING AND LOW RESISTANCE FOR RELIABILITY AND RUGGEDNESS INFINITE VSWR CAPABILITY AT SPECIFIED OPERATING CONDITIONS

SD4013

Abstract: M111 SUMIL25
Contextual Info: SD4013 RF & MICROWAVE TRANSISTORS UHF COMMUNICATIONS APPLICATIONS . . . PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION INTERNAL INPUT MATCHING METAL/CERAMIC PACKAGE EMITTER BALLASTED 20:1 VSWR CAPABILITY P OUT = 25 W MIN. WITH 9 dB GAIN .500 6LFL M111

SANYO marking kf

Abstract: S1U MARKING 2SC3772 VCB5167 marking Sanyo
Contextual Info: S A N Y O S E M I C O N D U C T O R C O R P E S E D 7 1 e l 7 7 t G b 2 7 f i T-3H7 2SC3772 NPN Epitaxial Planar Silicon Transistor 2018A UHF OSC, MIX, Low-Noise Wide-Band Amp Applications 1945B Applications . UHF frequency converters, local oscillators, low-noise amplifiers, wide-band

SUTV040

Abstract: M122 SD4011
Contextual Info: SD4011 RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS . . . . GOLD METALLIZATION INTERNAL INPUT MATCHING COMMON EMITTER OVERLAY GEOMETRY CLASS A OPERATION METAL/CERAMIC PACKAGE POUT = 4 W MIN. WITH 8 dB GAIN .280 4L STUD M122 epoxy sealed ORDER CODE

2SC1907

Abstract: transistor 2sc1907 F9-30 transistor r 724 d
Contextual Info: ST 2SC1907 NPN Silicon Epitaxial Planar Transistor for UHF TV Tuner and Local Oscillator. The transistor is subdivided into according to its DC current gain. one group, On special request, these transistors can be manufactured in different pin configurations.

SD2933

Abstract: 200B 700B M177
Contextual Info: SD2933 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 300 W MIN. WITH 20 dB GAIN @ 30 MHz • THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES

resistor 680 ohm

Abstract: Power Transformer EE-19 SD2931-10 EE-19 transformer SD2931 VK200 rf transformer 50 ohm to 0.1 ohm SCHEMATIC POWER SUPPLY WITH mosfet
Contextual Info: SD2931-10 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 150 W MIN. WITH 14 dB GAIN @ 175 MHz • THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES

2SC4571

Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA804T NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD The 2SC4571 has built-in 2 transistors which were developed for UHF. PACKAGE DRAWINGS (Unit: mm) FEATURES 2.1±0.1 • High fT 1.25±0.1

TP3010

Abstract: TP3010S
Contextual Info: M O T O R O L A SC X ST R S / R F HbE D • b3b?254 G O I S n a T2 3 ^ - O S MOTOROLA I SEM IC O N D U C T O R 1 ■ PIOTb m m b h h b h m b h h ih h b m TECHNICAL DATA TP3010 TP3010S The RF Line UHF Pow er Transistors 1.5 W t o 900 M H z UHF POW ER The TP3010/S are designed for 12.5 V, 900 M H z common-emitter amplifiers operating

resistor 560 ohm

Abstract: sc1430 SD2933 200B 700B M177
Contextual Info: SD2933 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 300 W MIN. WITH 20 dB GAIN @ 30 MHz • THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES

2N3866A

Abstract: RF NPN POWER TRANSISTOR 1000 WATT 2N3866 Transistor 2N3866 for transistor bfr96 RF 2N3866 2N4427 2N5179 2N6255 MRF4427
Contextual Info: 2N3866 / 2N3866A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • Silicon NPN, To-39 packaged VHF/UHF Transistor Specified 400 MHz, 28Vdc Characteristics - Output Power = 1.0 Watt - Minimum Gain = 10 dB - Efficiency = 45% 800 MHz Current-Gain Bandwidth Product

M122

Abstract: SD1448 TCC598 10pf atc
Contextual Info: SD1448 TCC598 RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS . . . 860 MHz 25 VOLTS COMMON EMITTER GOLD METALLIZATION CLASS A LINEAR OPERATION POUT = 4.0 W MIN. WITH 7.0 dB GAIN .280 4L STUD (M122) epoxy sealed ORDER CODE SD1448 BRANDING TCC598

6W toroid TRANSFORMER

Abstract: SD2921-10 uhf 150w mosfet SD2921 pin configuration 20k ohm potentiometer SC1318
Contextual Info: SD2921-10 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • ■ ■ ■ ■ GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 150W MIN. WITH 12.5 dB gain @175 MHz THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES

SD4100

Abstract: push pull class AB RF linear L band
Contextual Info: SD4100 RF POWER TRANSISTORS UHF TV/LINEAR APPLICATIONS • 470 - 860 MHz • 28 VOLTS • CLASS AB PUSH PULL • DESIGNED FOR HIGH POWER LINEAR OPERATION • HIGH SATURATED POWER CAPABILITY • INTERNAL INPUT/OUTPUT MATCHING NETWORKS PROVIDE HIGH BALANCED

TA4100F

Contextual Info: TOSHIBA TA4100F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA4100F UHF VHF RF, M IX APPLICATION FEATURES • High fT. fT = 5GHz • Differential Circuit is Composed of 3 Transistors. SSOP6-P-0.95 PIN ASSIGNMENT (TOP VIEW) B3 E W eight : 0.013g (Typ.)