UHF TRANSISTOR AMPLIFIER Search Results

2SC2586

Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SC2586 NPN SILICON EPITAXIAL TRANSISTOR FOR UHF-BAND POWER AMPLIFIER INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in m illim eters The 2SC2586 is an NPN silicon epitaxial transistor designed for UHF-band medium power amplifiers.

Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SC2586 NPN SILICON EPITAXIAL TRANSISTOR FOR UHF-BAND POWER AMPLIFIER INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in millimeters The 2SC 2586 is an NPN silicon epitaxial transistor designed for UHF-band medium pow er amplifiers.

Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SC2586 NPN SILICON EPITAXIAL TRANSISTOR FOR UHF-BAND POWER AMPLIFIER INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in millimeters The 2SC2586 is an NPN silicon epitaxial transistor designed ^ 9 .4 MAX. for UHF-band medium pow er amplifiers.

BY206

Abstract: C102F BZY88-C3V3 BLW34 BZY88C-3V3 100A-2RO-C-PX-50 uhf amplifier design Transistor
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLW34 UHF linear power transistor Product specification August 1986 Philips Semiconductors Product specification UHF linear power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in

capacitor 2200 uF

Abstract: philips resistor 2322 156 BLT82 UHF TRANSISTOR 2322 156 philips SMD ic catalogue 200B BC817 TRANSISTOR SMD L3 SMD TRANSISTOR L6
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLT82 UHF power transistor Product specification 1996 Feb 05 Philips Semiconductors Product specification UHF power transistor BLT82 FEATURES DESCRIPTION • High efficiency NPN silicon planar epitaxial transistor encapsulated in a

BLW33

Abstract: BY206 BZY88-C3V3 SOT122A BZY88C-3V3 application note blw33 BZY88 npn transistor dc 558
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLW33 UHF linear power transistor Product specification August 1986 Philips Semiconductors Product specification UHF linear power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in

BY206

Abstract: BZY88 BZY88-C3V3 BLW32 BZY88C-3V3 2222 809 05003 MGP430
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLW32 UHF linear power transistor Product specification August 1986 Philips Semiconductors Product specification UHF linear power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in

2SC2762

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC2762 NPN SILICON EPITAXIALTRANSISTOR FOR UHF-BAND POWER AMPLIFIER INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SC2762 is an NPN silicon epitaxial transistor designed for in millimeters UHF-band medium pow er amplifiers.

BLW98

Abstract: blw98 transistor BY206 application note blw98 BY206 Equivalent uhf linear amplifier BD136 linear handbook 3 pin trimmer capacitors transistor blw98
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLW98 UHF linear power transistor Product specification August 1986 Philips Semiconductors Product specification UHF linear power transistor BLW98 DESCRIPTION FEATURES: N-P-N silicon planar epitaxial transistor primarily intended for use in

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC2762 NPN SILICON EPITAXIAL TRANSISTOR FOR UHF-BAND POWER AMPLIFIER INDUSTRIAL USE DESCRIPTION P A C K A G E D IM E N S IO N S The 2SC2762 is an NPN silicon epitaxial transistor designed for UHF-band medium power amplifiers.

222259116641

Abstract: 222259016629 bvc62 AN98013 BD139 transistor circuit diagram BLV589 c38 transistor RG4M UHF amplifier module BLV859
Contextual Info: APPLICATION NOTE BLV859 UHF linear push-pull power transistor AN98013 Philips Semiconductors BLV859 UHF linear push-pull power transistor CONTENTS 1 ABSTRACT 2 INTRODUCTION 2.1 Amplifier Electrical design objectives 3 DESIGN OF THE AMPLIFIER 3.1 3.2 3.3 3.4

Contextual Info: DISCRETE SEMICONDUCTORS DAT BFG10W/X UHF power transistor Product specification 1995 Sep 22 NXP Semiconductors Product specification UHF power transistor BFG10W/X FEATURES DESCRIPTION • High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin

BC548 TRANSISTOR REPLACEMENT

Abstract: transistor BC548 Philips Capacitor RT5880 BC548 transistor bc548 bp HE bc548 BC548 transistor bc548 equivalent MBG431
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG10W/X UHF power transistor Product specification 1995 Sep 22 NXP Semiconductors Product specification UHF power transistor BFG10W/X FEATURES DESCRIPTION • High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin

U18 524

Abstract: 2SC4183 p 0368 mini IC 751 1124 U18 809
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4183 RF AMPLIFIER FOR UHF TV TUNER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4183 is specifically designed for UHF RF amplifier applications. The 2SC4183 features high gain, low noise, and excellent forward

MGS956

Abstract: TRansistor CQ 648
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D159 LLE18040XL UHF power transistor Product specification 1999 Dec 06 Philips Semiconductors Product specification UHF power transistor LLE18040XL FEATURES PINNING - SOT437A • Emitter ballasting resistors for optimum temperature

Philips Capacitor

Abstract: transistor BC548 RT5880 PHILIPS 4312 amplifier capacitor 1500 uF marking c8 transistor 2222 032 Philips 135 Capacitor Transistor Marking C3 bc548 equivalent
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG10W/X UHF power transistor Product specification File under Discrete Semiconductors, SC14 1995 Sep 22 Philips Semiconductors Product specification UHF power transistor BFG10W/X FEATURES DESCRIPTION • High efficiency

2SC1070

Abstract: s parameters RF NPN POWER TRANSISTOR 100MHz Tma UHF
Contextual Info: NEC SILICON TRANSISTOR ELECTRON DEVICE 2SC1070 B RF AMP. FOR UHF TV TUNER NPN SILICON TRANSISTOR DISK MOLD The 2SC1070(B) is specifically designed fo r UHF RF amplifier PACKAGE DIMENSIONS (Unit : mm) applications. The 2SC1070(B) features high power gain, low

U18 524

Abstract: 2SC4183
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4183 RF AMPLIFIER FOR UHF TV TUNER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4183 is specifically designed for UHF RF amplifier applica­ tions. The 2SC4183 features high gain, low noise, and excellent forward

TRANSISTOR C 6090

Abstract: TRANSISTOR C 6090 npn 2N5090 E200C LC 7621 fh15
Contextual Info: 2 N 5090 NPN SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR NPN SILIC IU M , PLANAR EPITAXIAL UHF-VHF amplifier, frequency multiplier or oscillator Amplificateur, multiplicateur de fréquenceou oscillateur VHF-UHF v CEO 30 V 'c 0,4 A ^ 2 1 E ^ mA 10 - 200

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4183 RF AMPLIFIER FOR UHF TV TUNER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4183 is specifically designed for UHF RF amplifier applica­ tions. The 2SC4183 features high gain, low noise, and excellent forward

BLF542

Abstract: MBB778
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLF542 UHF power MOS transistor Product specification File under Discrete Semiconductors, SC08b October 1992 Philips Semiconductors Product specification UHF power MOS transistor FEATURES BLF542 PIN CONFIGURATION • High power gain

BLF542

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLF542 UHF power MOS transistor Product specification October 1992 Philips Semiconductors Product specification UHF power MOS transistor FEATURES BLF542 PIN CONFIGURATION • High power gain • Easy power control halfpage

BLV57

Abstract: mexico Ceramic capacitor 105 RF push pull power amplifier UHF POWER TRANSISTOR MGP365
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLV57 UHF linear push-pull power transistor Product specification Supersedes data of August 1986 1998 Feb 09 Philips Semiconductors Product specification UHF linear push-pull power transistor FEATURES BLV57 PINNING - SOT161A

Power UHF amplifiers 432 MHz

Abstract: Transistor 1308 transistor 1334 SOT634A BLF2022-125
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D792 BLF2022-125 UHF power LDMOS transistor Objective specification Supersedes data of 2002 April 02 2003 Mar 07 Philips Semiconductors Objective specification UHF power LDMOS transistor BLF2022-125 PINNING - SOT634A FEATURES