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    UHF AMPLIFIER Search Results

    UHF AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LM759H/B
    Rochester Electronics LLC LM759 - Power Operational Amplifier PDF Buy
    HA2-2541-2
    Rochester Electronics LLC HA2-2541 - Operational Amplifier PDF Buy
    LM759CH
    Rochester Electronics LLC LM759 - Power Operational Amplifier, MBCY8 PDF Buy
    LM1536J/883
    Rochester Electronics LLC LM1536 - Operational Amplifier - Dual marked (7800304PA) PDF Buy
    LM108AL
    Rochester Electronics LLC LM108 - Super Gain Op Amp PDF Buy

    UHF AMPLIFIER Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    "vhf,uhf transistor"

    Abstract: J-STD-020A MMBTH24 MMBTH24-7 MMBTH24-7-F
    Contextual Info: SPICE MODEL: MMBTH24 MMBTH24 NPN SURFACE MOUNT VHF/UHF TRANSISTOR Features • · · · Designed for VHF/UHF Amplifier Applications and High Output VHF Oscillators High Current Gain Bandwidth Product Ideal for Mixer and RF Amplifier Applications with collector currents in the 100mA - 30 mA


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    MMBTH24 100mA OT-23 OT-23, J-STD-020A MIL-STD-202, DS31034 "vhf,uhf transistor" J-STD-020A MMBTH24 MMBTH24-7 MMBTH24-7-F PDF

    di 4-0992

    Abstract: 5962F9676701VPC 5962F9676701VPA HFA11XXEVAL HS-1135RH HS7-1135RH-Q HS7B-1135RH-Q
    Contextual Info: HS-1135RH Data Sheet Radiation Hardened, High Speed, Low Power Current Feedback Amplifier with Programmable Output Limiting The HS-1135RH is a radiation hardened, high speed, low power current feedback amplifier built with Intersil’s proprietary complementary bipolar UHF-1 DI bonded wafer


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    HS-1135RH HS-1135RH MIL-PRF-38535. di 4-0992 5962F9676701VPC 5962F9676701VPA HFA11XXEVAL HS7-1135RH-Q HS7B-1135RH-Q PDF

    gm 4511

    Abstract: GP 841 Diode MGF0917A scl 1444
    Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0917A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0917A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=24dBm TYP. @f=1.9GHz,Pin=4dBm


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    MGF0917A MGF0917A 24dBm gm 4511 GP 841 Diode scl 1444 PDF

    4977 gm

    Abstract: MGF0919A
    Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0919A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0919A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=30dBm TYP. @f=1.9GHz,Pin=12dBm


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    MGF0919A MGF0919A 30dBm 12dBm 300mA 4977 gm PDF

    Contextual Info: PF0348 Series MOS FET Power Amplifier Module for UHF Band HITACHI ADE-208-343C Z 4th Edition December 1996 Features • Small package: 30 x 10 x 5.9 mm • Low operation voltage: 7 W at 7.2 V • Low power control current: 200 ¡lA Typ Ordering Information


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    PF0348 ADE-208-343C PF0348 PF0349 PF0350 PF0351 PF0352 PF0353 PDF

    Contextual Info: BB304C Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier HITACHI ADE-208-606C Z 4th. Edition Aug. 1, 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; (PG = 29 dB typ. at f = 200 MHz) • Low noise characteristics;


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    BB304C ADE-208-606C 200pF, OT-343mod) BB304C SC-82AB PDF

    38PIN

    Contextual Info: SN761677 www.ti.com SLES066A – DECEMBER 2002 TV/VCR TUNER IC WITH DC/DC CONVERTER FEATURES D Single Chip Mixer/Oscillator, Synthesizer, and DA PACKAGE TOP VIEW 38-PIN TSSOP (DA) 30-V DC/DC Converter for Tuning Amplifier D D D D D VHF-L, VHF-H, UHF 3-Band Local Oscillator


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    SN761677 SLES066A 38-PIN SN761677 38PIN PDF

    Contextual Info: BB305M Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier HITACHI ADE-208-607C Z 4th. Edition May 1, 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Superior cross modulation characteristics. • High gain; (PG = 28 dB typ. at f = 200 MHz)


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    BB305M ADE-208-607C 200pF, OT-143mod) BB305M Maxim62 SC-61 PDF

    TRANSISTOR 7812

    Abstract: HFA3046 HFA3046B HFA3096 HFA3096B HFA3127 HFA3127B HFA3128 HFA3128B 8660
    Contextual Info: HFA3046, HFA3096, HFA3127, HFA3128 TM Data Sheet October 1998 File Number 3076.10 Ultra High Frequency Transistor Arrays Features The HFA3046, HFA3096, HFA3127 and the HFA3128 are Ultra High Frequency Transistor Arrays that are fabricated from Intersil Corporation’s complementary bipolar UHF-1


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    HFA3046, HFA3096, HFA3127, HFA3128 HFA3127 HFA3128 HFA3046 TRANSISTOR 7812 HFA3046B HFA3096 HFA3096B HFA3127B HFA3128B 8660 PDF

    MMBT918LT1G

    Abstract: MMBTA92LT3 MMBT918LT1 2m3b marking code 17 SOT-23
    Contextual Info: MMBT918LT1 VHF/UHF Transistor NPN Silicon Features • Pb−Free Package May be Available. The G−Suffix Denotes a http://onsemi.com Pb−Free Lead Finish COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 15 Vdc Collector −Base Voltage


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    MMBT918LT1 MMBT918LT1/D MMBT918LT1G MMBTA92LT3 MMBT918LT1 2m3b marking code 17 SOT-23 PDF

    atmel 928

    Abstract: SO20 T5750 T5760 T5760-TG T5760-TGQ T5761 T5761-TG T5761-TGQ K2232
    Contextual Info: T5760 / T5761 UHF ASK/FSK Receiver Description The T5760/T5761 is a multi-chip PLL receiver device supplied in an SO20 package. It has been especially developed for the demands of RF low-cost data transmission systems with data rates from 1 kBaud to 10 kBaud in


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    T5760 T5761 T5760/T5761 T5750. D-74025 19-Oct-00 atmel 928 SO20 T5750 T5760-TG T5760-TGQ T5761 T5761-TG T5761-TGQ K2232 PDF

    coupler 225-400 mhz

    Abstract: M1963 M1963-79 Anaren Microwave 11360-3
    Contextual Info: A Publication No. M1963-79 UHF Hybrid Coupler 3 dB, 90°, Surface Mount Anaren Microwave, Inc. 6635 Kirkville Road East Syracuse, NY 13057, U.S.A. Tel: 315 432-8909 Toll Free: (800) 411-6596 Fax: (315) 432-9121 Anaren is pleased to offer a 3 dB, 90° coupler in a


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    M1963-79 coupler 225-400 mhz M1963 M1963-79 Anaren Microwave 11360-3 PDF

    Contextual Info: SN761683B TV TUNER IC www.ti.com SLES180 – MAY 2006 FEATURES • • • • • • • • Single-Chip Mixer/Oscillator and Phase-Locked Loop PLL Synthesizer Three-Band Local Oscillator and Mixer Inter-Integrated Circuit (I2C) Bus Protocol (Bidirectional Data Transmission)


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    SN761683B SLES180 32-Pin PDF

    PCS-1900MHz

    Abstract: UHF "AGC Amplifier" 1GHz oscillator UHF band RF modulator MGCT02 MGCT04 QSOP28
    Contextual Info: MGCT02 Transmit Circuit for TDMA/AMPS Features • • • • • DS5241 The MGCT02 circuit is designed for use in dual band, dual mode cellular 900MHz/PCS1900MHz mobile phones. It can be used for TDMA/AMPS. The MGCT02 is compatible with baseband and mixed


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    MGCT02 DS5241 MGCT02 900MHz/PCS1900MHz MGCT02/KG/QP1S MGCT02/KG/QP1T PCS-1900MHz UHF "AGC Amplifier" 1GHz oscillator UHF band RF modulator MGCT04 QSOP28 PDF

    Contextual Info: HD155111F RF Single-chip Linear IC for PCN Cellular Systems HITACHI ADE-207-257 Z 1st Edition August 1998 Description The HD 15511 IF was developed for PCN (DCS 1800) cellular systems, and integrates most of the functions of a transceiver. The HD 15511 IF incorporates the bias circuit for a RF LNA, a 1st mixer, lst-IF amplifier,


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    HD155111F ADE-207-257 48-pin 1747MHz, 1735MHz FP-48 PDF

    CMM0530-LC-00S0

    Abstract: tdma noise reduce CMM0530-LC-00ST CMM0530-LC-00T0 CMM0530-LC-00TT IS-136 CMM0530
    Contextual Info: CMM0530-LC Advanced Product Information May 1999 1 of 4 824 to 928 MHz 3.0V, 30.5 dBm Multi-Mode Plastic LCC-8 Power Amplifier Features ❏ Multi-Mode Operation as Low as 3.0V ❏ 42% Linear Power Added Efficiency ❏ 55% Analog Power Added Efficiency ❏ New Low-Cost, Plastic LCC-8 Package


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    CMM0530-LC IS-98/AMPS IS-136/AMPS CMM0530-LC-00S0 tdma noise reduce CMM0530-LC-00ST CMM0530-LC-00T0 CMM0530-LC-00TT IS-136 CMM0530 PDF

    Contextual Info: TR F1 TRF1222 222 www.ti.com SLWS171A – APRIL 2005 – REVISED DECEMBER 2005 3.5-GHz Integrated Up-Converter FEATURES KEY SPECIFICATIONS • • • • • • • • • • Performs Up-Conversion in 3.5-GHz Radios 3300-3800 MHz Integrated IF amplifier, Mixer and LO Buffer


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    TRF1222 SLWS171A 16-dB TRF1222 PDF

    Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG3012NT1 Rev. 3, 3/2007 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3012NT1 Broadband High Linearity Amplifier The MMG3012NT1 is a General Purpose Amplifier that is internally input matched and internally output matched. It is designed for a broad


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    MMG3012NT1 MMG3012NT1 PDF