UHF/POWER AMPLIFIERS Search Results

2SC2586

Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SC2586 NPN SILICON EPITAXIAL TRANSISTOR FOR UHF-BAND POWER AMPLIFIER INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in m illim eters The 2SC2586 is an NPN silicon epitaxial transistor designed for UHF-band medium power amplifiers.

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF1032 The RF Line UHF Power TVansistor . . . designed primarily for large-signal output and driver amplifier stages to 1.0 GHz. • Designed for Class A Linear Power Amplifiers 6.0 W, TO 1.0 GHz UNEAR UHF POWER TRANSISTOR

Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Power Tkansistor . . . designed primarily for wideband, large-signal output and driver amplifier stages to 1.0 GHz. • Designed for Class A Linear Power Amplifiers 4.5 W, TO 1.0 GHz LINEAR UHF POWER TRANSISTOR

MHW2727

Abstract: Amplifier Modules motorola MHW2727-3 sps 1951 Motorola UHF Power Amplifier Module
Contextual Info: MOTOROLA Order this document by MHW2727/D SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Silicon FET Power Amplifiers MHW2727-3 Designed for 7.5 volt UHF power amplifier applications in industrial and commercial equipment primarily for hand portable radios.

Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SC2586 NPN SILICON EPITAXIAL TRANSISTOR FOR UHF-BAND POWER AMPLIFIER INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in millimeters The 2SC 2586 is an NPN silicon epitaxial transistor designed for UHF-band medium pow er amplifiers.

MHW820-1

Abstract: MHW820-3 MOTOROLA hybrid amplifiers MHW820-3
Contextual Info: MOTOROLA • SEMICONDUCTOR MHW820-1 MHW820-2 MHW820-3 TECHNICAL DATA The RF Line 18/20 W — 806-950 MHz RF POWER AMPLIFIERS UHF POWER AMPLIFIERS . designed for 12.5 volt UHF power amplifier applications in industrial and commercial FM equipment operating from 806 to

Motorola UHF Power Amplifier Module

Abstract: MHW2805-1 MHW2805-2 420AB
Contextual Info: Order this document by MHW2805/D MHW2805-1 MHW2805-2 Advance Information UHF Silicon FET Power Amplifiers Designed for 7.5 V UHF power amplifier applications in industrial and commercial equipment primarily for hand portable radios. • Specified 7.5 V Characteristics:

Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SC2586 NPN SILICON EPITAXIAL TRANSISTOR FOR UHF-BAND POWER AMPLIFIER INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in millimeters The 2SC2586 is an NPN silicon epitaxial transistor designed ^ 9 .4 MAX. for UHF-band medium pow er amplifiers.

Contextual Info: MOTOROLA Order this document by MHW707/D SEMICONDUCTOR TECHNICAL DATA MHW707-1 MHW707-2 MHW707-3 MHW707-4 The RF Line UHF Power Amplifiers Designed for 7.5 Volt UHF power amplifier applications in industrial and commercial equipment primarily hand portable radios.

MHW2805-1

Abstract: MHW2805-2 Motorola UHF Power Amplifier Module
Contextual Info: Order this document by MHW2805/D MHW2805-1 MHW2805-2 ARCHIVE INFORMATION UHF Silicon FET Power Amplifiers Designed for 7.5 V UHF power amplifier applications in industrial and commercial equipment primarily for hand portable radios. • Specified 7.5 V Characteristics:

LF1002

Abstract: MHW2821 MHW2821-1 MHW2821-2 phcenix MHW2621-1
Contextual Info: .— MOTOROLA SEMICONDUCTOR ‘* TECHNICAL Order this document bv MHW28211D DATA The RF Line MHW2821-1 MHW2821-2 UHF Silicon FET Power Amplifiers Designed for 12.5 volt UHF power amplifier applications commercial FM equipment operating from 806 to 950 MHz.

MHW2821-1

Abstract: 81 210 W 20 MHW2821 MHW2821-2 Motorola UHF Power Amplifier Module motorola application note amplifier power
Contextual Info: Order this document by MHW2821/D MHW2821-1 MHW2821-2 UHF Silicon FET Power Amplifiers Designed for 12.5 V UHF power amplifier applications in industrial and commercial FM equipment operating from 806 to 950 MHz. • Specified 12.5 V Characteristics: RF Input Power: ≤250 mW MHW2821–1

MHW2821-1

Abstract: MHW2821 MHW2821-2
Contextual Info: MOTOROLA Order this document by MHW2821/D SEMICONDUCTOR TECHNICAL DATA MHW2821-1 MHW2821-2 The RF Line UHF Silicon FET Power Amplifiers Designed for 12.5 volt UHF power amplifier applications in industrial and commercial FM equipment operating from 806 to 950 MHz.

BLV862

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLV862 UHF linear push-pull power transistor Preliminary specification File under Discrete Semiconductors, SC08a 1996 Jun 11 Philips Semiconductors Preliminary specification UHF linear push-pull power transistor FEATURES

Contextual Info: b S H T û E 1! D O lflO öl ÖTT MITSUBISHI SEMICONDUCTOR GsAsMMIC MGF7113P UHF BAND GaAs POWER AMPLIFIER IC DESCRIPTION Unlttmillimeters OUTLINE DRAWING MGF7113P is a monolithic microwave integrated circuit for use in UHF band power amplifiers. 3 C Z I@

cermolox

Abstract: TP105 burle "Power Tube"
Contextual Info: 4665 Power Tube UHF Pulsed Power Amplifier Tube - Cermolox - Forced-Air-Cooled - Coaxial Terminals - Full Input to 1215 MHz - 65kW Peak Pulsed Power Output - Controlled Interelectrode Capacity The BURLE 4665 is designed for use as a reliable UHF pulsed

2SC2762

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC2762 NPN SILICON EPITAXIALTRANSISTOR FOR UHF-BAND POWER AMPLIFIER INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SC2762 is an NPN silicon epitaxial transistor designed for in millimeters UHF-band medium pow er amplifiers.

TRANSISTOR SMD MARKING CODE w2

Abstract: smd TRANSISTOR code marking w2 smd transistor marking u1 SMD transistor MARKING CODE 312 TEKELEC all transistor book AN10229 transistor smd marking code c3 smd transistor marking C14 8DS3
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF1820-90 UHF power LDMOS transistor Product specification Supersedes data of 2001 Mar 07 2003 Feb 10 Philips Semiconductors Product specification UHF power LDMOS transistor BLF1820-90 PINNING FEATURES

uhf amp circuit diagrams

Abstract: marking JY 2095 FL 2SC3770 JY marking transistor 2095A marking u4j
Contextual Info: Ordering number :EN2095A ;_ 2SC3770 No.2095A NPN Epitaxial Planar Silicon Transistor UHF, VHF Oscillator, Mixer, HF Amp Applications Applications . UHF/VHF frequency converters, local oscillators, HF amplifiers Features . High power gain: PG=15dB typ f=0.4GHz .

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC2762 NPN SILICON EPITAXIAL TRANSISTOR FOR UHF-BAND POWER AMPLIFIER INDUSTRIAL USE DESCRIPTION P A C K A G E D IM E N S IO N S The 2SC2762 is an NPN silicon epitaxial transistor designed for UHF-band medium power amplifiers.

ferroxcube 4322

Abstract: PRC201 SMD CAPACITOR L27 BLV2048 smd L17 npn
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D374 BLV2048 UHF push-pull power transistor Preliminary specification 1999 Apr 23 Philips Semiconductors Preliminary specification UHF push-pull power transistor BLV2048 PINNING - SOT494A FEATURES • Emitter ballasting resistors for optimum temperature

smd transistor marking C14

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF1820-70 UHF power LDMOS transistor Product specification Supersedes data of 2001 Feb 12 2003 Feb 10 Philips Semiconductors Product specification UHF power LDMOS transistor BLF1820-70 PINNING FEATURES

SOT539A

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D427 BLF2022-120 UHF push-pull power LDMOS transistor Preliminary specification Supersedes data of 2001 Jan 04 2003 Mar 07 Philips Semiconductors Preliminary specification UHF push-pull power LDMOS transistor BLF2022-120

4S2/4330

Abstract: BLF2022-90
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF2022-90 UHF power LDMOS transistor Product specification Supersedes data of 2002 Sep 09 2003 Feb 24 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2022-90 FEATURES PINNING - SOT502A