UFT30 Search Results

ASI10666

Abstract: UFT30-28
Contextual Info: UFT30-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The UFT30-28 is Designed for Class A and B Power Ampliifiers Operating up to 500 MHz. PACKAGE STYLE .380 4L FLG. B .112 x 45° FEATURES: A S D Ø.125 NOM. FULL R J • PG = 7.0 dB min. at 25 W/400 MHz • ηD = 60 % Typical

ASI10666

Abstract: UFT30-28S
Contextual Info: UFT30-28S NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .380 4L STUD DESCRIPTION: .112x45° The ASI UFT30-28S is Designed for A B FEATURES: ØC • • • Omnigold Metalization System D H J G #8-32 UNC-2A F MAXIMUM RATINGS E 10 A IC VCB VCE 60 V 35 V PDISS

Contextual Info: UFT3005D Diodes High-Speed Center-Tapped Doubler I O Max.(A) Output Current30 V(RRM)(V) Rep.Pk.Rev. Voltage50 t(rr) Max.(s) Rev.Rec. Time35n @I(F) (A) (Test Condition)1.0 @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage930m @I(FM) (A) (Test Condition)15

UFT3005

Abstract: I201 UFT30 UFT3015 UFT3020 UFT3120 UFT3130 UFT3140 UFT3150 UFT3250
Contextual Info: Ultra Fast Recovery Rectifiers UFT30, 31 & 32 M illim eter Dim. inches r A“1 Minlmum CASE D=D0UBLER 'tí CASE A=AN0DE • M CASE ,250 .312 .038 1.177 .655 .420 -.151 .205 -■- Maximum Notes _ .875 .450 -.043 1.197 .675 .440 .525 .161 .225

UFT3130

Abstract: UFT30 UFT3010 UFT3015 UFT3020 UFT3140 UFT3150 UFT3260 UFT3270 UFT3280
Contextual Info: Ultra Fast Recovery Rectifiers UFT30, 31 & 32 M 10 i M ° 2 Dim . Inches r < t B r I I Minimum CASE D=DOUBLER I _ j — D CASE A=ANODE •tjf- - K .205 L - M icro se m i C a ta lo g N um ber -3.84 5.21 .225 .135 .188 22.23 11.43 - Dia. 1.09

ASI10666

Abstract: UFT30-28
Contextual Info: UFT30-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The UFT30-28 is Designed for Class A and B Power Ampliifiers Operating up to 500 MHz. PACKAGE STYLE .380 4L FLG. B .112 x 45° A S FEATURES: D Ø.125 NOM. FULL R J • PG = 7.0 dB min. at 25 W/400 MHz • η D = 60 % Typical

Contextual Info: UFT3005C Diodes Center-Tapped Positive CC HS Rectifier I(O) Max.(A) Output Current30 V(RRM)(V) Rep.Pk.Rev. Voltage50 t(rr) Max.(s) Rev.Rec. Time35n @I(F) (A) (Test Condition)1.0 @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage930m @I(FM) (A) (Test Condition)15

UFT30

Abstract: UFT3010 UFT3015 UFT3020 UFT3130 UFT3140 UFT3150 UFT3260 UFT3270 UFT3280
Contextual Info: Ultra Fast Recovery Rectifiers UFT30, 31 & 32 1 ° r i H ° 2 Dim. Inches i □ = V ' CASE A=ANODE ' V CASE C=CATHODE M icrosem i Catalog Num ber UFT3010* UFT3015* UFT3020* UFT3130* UFT3140* UFT3150* UFT3260* UFT3270* UFT3280* Maximum Minimum _ A B C D E

UFT-5300-20JP

Abstract: UFT4800-10HP 16JL UFT-2900-40JS UFT380-150JS UFT3005
Contextual Info: CDE CORNELL DUBILIER Axial. 105 C, 4 Term inal. U ltra-L ow Im p ed an ce, Type U F T One Nanohenry Series Inductance For applications requiring ultra-low im pedance above 10kHz and extrem e tem peratures. Type U FT is made with a solid feed-through core and unique

UFT1300-75

Contextual Info: ODE CO R N E L L DU BI L I E R Axial, 105°C, 4 Terminal, Ultra-Low Impedance, Type UFT One Nanohenry Series Inductance For applications requiring ultra-low impedance above 10kHz and extreme temperatures, Type UFT is made with a solid feed-through core and unique

tp2304

Abstract: TPV3100 TP9383 TP2330 MRF2001 PT9783 PT9780 tp8828f BLY93A mrf 406 application circuit
Contextual Info: ASI Part Number AM1214-100 AM1214-200 AM1214-325 AM80912005 AM80912015 AM80912030 AM80912085 AM80912150 AM81214006 AM81214015 AM81214030 AM81214060 BLF147 BLF175 BLF177 BLF242 BLF244 BLF245 BLF246 BLF278 BLF368 BLU11/SL BLU15/12 BLU20/12 BLU30/12 BLU45/12

UES2603R

Abstract: UES2602R UFR-14 1N6707
Contextual Info: Ultra Fast Rectifiers Part Number |lip lÊ siîil:•11£S 1N6707R UFT2080 PPR1310 UES701 UES701R PPR1311 UES702 UES702R PPR1312 UES703 UES703R UES2601 UES2601R UES3005C UES3005S UFR3005 UFR3005PF UFR3005R UF3010 UES2602 UES2602R UES3010C UES3010S UFR3010

scr 8a 200v

Abstract: do213ab 50A 1200V SCR 5A 200V SCR die SCR 30A 100V USD635C 1n4436 US60A eh12a 1N1183
Contextual Info: Product Guide Power Semiconductors Microsemi more than solutions - enabling possibilities R TM Microsemi Power Semiconductors Contents Selection Military Qualified

TPV3100

Abstract: TP3024A HF power amplifier TPV3100 PT9783 MRF466 mrf4070 tp9383 tp2304 mrf433 MRF492A
Contextual Info: TABLE OF CONTENTS INTRODUCTION iii GENERAL INFORMATION iv QUALITY ASSURANCE & RELIABILITY v PRODUCT INDEX Alphanumeric vi RF POWER TRANSISTORS ! ! ! ! ! ! ! ! ! ! ! HF SSB HF MOSFETS VHF VHF & UHF MOSFETS UHF UHF MILITARY PULSED AVIONICS PULSED RADAR CW MICROWAVE

UFT3005

Abstract: 1N1815A 1N1815-A JANTX1N3013B JANTXV1N3013B 1N1814 1N1814A 1N3014A JAN1N3014B JANTX1N3014B
Contextual Info: Zener Regulator Diodes ZEN JANTXV1N3011B 1N1813 1N1813A 1N3012A 1N3012B JAN1N3012B JANTX1N3012B JANTXV1N3012B 1N3013A 1N3013B JAN1N3013B JANTX1N3013B JANTXV1N3013B 1N1814 1N1814A 1N3014A 1N3014B JAN1N3014B JANTX1N3014B JANTXV1N3014B 1N1815 1N1815A 1N3015A

do213ab

Abstract: do215 MS10411 SCR 30A 100V microsemi cross index X3420 Bridge Rectifier, 35A, 600V DO215AA 1N5823 scr 1a 1200V
Contextual Info: POWER CONDITIONING PRODUCT SELECTION GUIDE Product Selection Guide Index Page Military Qualified Parts 1 Axial Lead Rectifiers 2 Surface Mount Rectifiers 3-5 TO220 and TO247 Rectifiers 6 Power Surface Mounts 7 Discrete Modules 8 Power Modules 9-10 Hermetic Power Packages