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    ASI10666 Search Results

    ASI10666 Datasheets (1)

    Advanced Semiconductor
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    ASI10666
    		Advanced Semiconductor NPN SILICON RF POWER TRANSISTOR Original PDF 19.18KB 1

    ASI10666 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    ASI10666

    Abstract: UFT30-28
    Contextual Info: UFT30-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The UFT30-28 is Designed for Class A and B Power Ampliifiers Operating up to 500 MHz. PACKAGE STYLE .380 4L FLG. B .112 x 45° FEATURES: A S D Ø.125 NOM. FULL R J • PG = 7.0 dB min. at 25 W/400 MHz • ηD = 60 % Typical


    Original     		uft30-28asi10666 PDF

    ASI10666

    Abstract: UFT30-28S
    Contextual Info: UFT30-28S NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .380 4L STUD DESCRIPTION: .112x45° The ASI UFT30-28S is Designed for A B FEATURES: ØC • • • Omnigold Metalization System D H J G #8-32 UNC-2A F MAXIMUM RATINGS E 10 A IC VCB VCE 60 V 35 V PDISS


    Original     		uft30-28s112x45asi10666 PDF

    ASI10666

    Abstract: UFT30-28
    Contextual Info: UFT30-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The UFT30-28 is Designed for Class A and B Power Ampliifiers Operating up to 500 MHz. PACKAGE STYLE .380 4L FLG. B .112 x 45° A S FEATURES: D Ø.125 NOM. FULL R J • PG = 7.0 dB min. at 25 W/400 MHz • η D = 60 % Typical


    Original     		uft30-28asi10666 PDF