UFF 50 02 Search Results

2SC1557

Abstract: L39C cub vc 150
Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA DISCRETE/OPTO tpwjimm/fmm L 39C 0 0 4 8 9 Ü T ^ 3 / '2 3 - -If O O VHP , L’HP^CATVffl ° Microwave High Power Amplifier Applications ° VHP, II HP Band CATV Applications MAXIMUM RATINGS (Ta =25°C) CHARACTERISE C

X band 5-bit phase shifter

Abstract: MA03501D phase shifter
Contextual Info: MA03501D X-Band Serial Input 5-Bit Attenuator / 6-Bit Phase Shifter / Buffer Amplifier Die FEATURES •= •= Advanced Information Phase Shifter / Attenuator 8 to 11 GHz Operation 50 Ω Input Impedance RF O ut R F In •= Self-Aligned MSAG MESFET Process

2CSM

Contextual Info: ADAM TECH . 050" RECEPTACLE STRIPS ,050" [1 .2 7 ] CENTERLINE ADAM TECHNOLOGIES INC. HRS SERIES INTRODUCTION: Adam Tech HRS Series Half Pitch Receptacle Strips are designed for applications where space and weight are key factors. They are available with two thru-hole body profiles and tw o surface mount

X band 5-bit phase shifter

Contextual Info: MA03501 X-Band Serial Input 5-Bit Attenuator / 6-Bit Phase Shifter / Buffer Amplifier Die FEATURES • • • Preliminary Release Phase Shifter / Attenuator 8 to 11 GHz Operation 50 Ω Input and Output Impedance RF O ut R F In Self-Aligned MSAG MESFET Process

Contextual Info: TO SH IB A TD62304,305FB TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62304FB, TD62305FB 7CH LOW INPUT ACTIVE DARLINGTON SINK DRIVER The TD62304FB and TD62305FB are non-inverting transistor arrays, which are comprised of seven NPN darlington output stages PNP input stages.

LA3181

Abstract: GU C6U
Contextual Info: -1 1 1 • 1 1 ■ n « 'rvv " ^ S A N Y O , ij; > 'v íM jr 7 £ t t[ 5 is a 0286 W ^ c x : t ’ ’V' ■■ : L A 3 1 8 1 Nü2 3 6 6 1 i l i l i f r ' 2 4 i / i7 ' J ñ 2 í i > í l l > . . < 3 5 " ? ' í ' í < r ? i 7 "V, %,.!x úmi-'A-r-l'*', f - 7 f ' V + ,

smvl5

Contextual Info: ERC90M -03|5 ai : Outline Drawings LOW LOSS SUPER HIGH SPEED RECTIFIER 4 5 MAX. 2.0 i r M a tlJ : Features az JEDEC Insulated package by fully molding. EIAJ SC-67 • 1&VF Low V f- Connection Diagram Sup er high speed switching, High reliability by planer design.

ESAD83-004

Abstract: ESAD83-004 SCHOTTKY DIODE i30 diode SC-65 T460 T810
Contextual Info: ESAD83-004 3 oa SCHOTTKY BARRIER DIODE • 4 # « : Features • teVF Low VF Super high speed switching. Connection Diagram High reliability by planer design, : Applications High speed power switching. Maximum Ratings and Characteristics • & * * * * £ % : Absolute Maximum Ratings

PNP DARLINGTON SINK DRIVER 7CH

Contextual Info: TO SH IB A TD62304,305FB TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62304FB, TD62305FB 7CH LOW INPUT ACTIVE DARLINGTON SINK DRIVER The TD62304FB and TD62305FB are non-inverting transistor arrays, which are comprised of seven NPN darlington output stages PNP input stages.

Contextual Info: 3539 2 56 x 8 STATIC RANDOM ACCESS MEMORY f t c G E N E R A L DESCRIPTION - T he 3539 is a 2048-bit Static Read/Write Random Access Memory. Organized as 2S6 8-bit words, the 3239 features a com m on I/O structure which aHows packaging in a standard 22-pin ceramic O jP -J'his device uses a single +5 v o lt power supply and is TTL-com patible on

SCR SN 104

Abstract: SCR SN 104 rating
Contextual Info: 7294621 POWEREX I N C _ D 2 E POtdEREX INC 02 m /H BtEX 02934 D T - ZS' ~'t*} » e 75T4ti51 f ODDaTBH 7 T625 Powerex, Inc. Hlllls Street, Youngwood, Pennsylvania 15697 (412 925-7272 Powerex Europe, S.A., 428 Ave. G. Durand, BP107, 72003 LeMans, France (43) 72.75.15

Contextual Info: T S 9 1 2 S 6 ioa * ± /j K •£f712'\l">£ ’. O utline D raw ings LOW LOSS SUPER HIGH SPEED RECTIFIER ■ 4 5 J I : Features Surface m ou nt device. • I& V f Low V f IfE ffiJ iU E C onnection D iagram Super high speed sw itching. High reliability by planer design

2sk mosfet rf power

Abstract: 2SK903-MR DR-100 2SK903 equivalent 2sk903mr 903-MR
Contextual Info: 2SK903-MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F - I S E R I E S O utline D raw ings • Features • High speed sw itching • Low on-resistance • No secondary breakdown • Low driving power • High voltage ■ A p p lic a tio n s • Sw itching regulators

k2915

Contextual Info: 2SK2915 TO SHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2S K29 15 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • Low Drain-Sorce O N Resistance

IC SEM 2004

Abstract: SA1002C TQFP48 TSA0801 TSA1001 TSA1002CF TSA1002CFT TSA1002IF TSA1201 61J21
Contextual Info: IG N TSA1002 10-BIT, 50MSPS, 50mW A/D CONVERTER P P E Temperature Range 0 C to +70 C TQFP48 Tray SA1002C 0 C to +70 C TQFP48 Tape & Reel SA1002C TSA1002IF -40 C to +85 C TQFP48 Tray SA1002I TSA1002IFT -40 C to +85 C TQFP48 Tape & Reel SA1002I EVAL1002/AA Evaluation board

Contextual Info: D 2 I ,< rj — 1 M ^ - 1 2 i o o a 3.—JU W ïfé T l'ïi : Outline Drawings POWER TRANSISTOR MODULE • 9U S : Features • JSSSRS^iSSl.' High Arm Short Circuit Capability • hFEfr'Sv.' High DC Current Gain • 7 'J —f r 'f'J > $ ¥ 4 % —KrtSR Including Freewheeling Diode

Contextual Info: Ferrite Chip EMI Filters ACF Series The ACF series is a T-type circuit ferrite chip EMI filter with chip-beads and a multilayer ceramic chip capacitor. When inserted in a circuit with a stable GND, it has a great EMI suppression effect. They are all suitable for high density surface mounting.

SMP Connectors

Abstract: MIL-STD-348 RD-178 P703 RP 110 240 0,5-5 RD178 catchers mitt connector p680 p703 D5204 93-RG178
Contextual Info: SMP Interconnect Series FEATURES INTRODUCTION Carlisle Interconnect Technologies launched the SMP “push-on” connector product line about two decades ago to facilitate dense packaging within RF/Microwave systems. The SMP interface has enabled design engineers to increase

PRA-4 NEC

Abstract: CIR656 slim odd ide ata interface 991f0 DSP2185
Contextual Info: ANALOG DEVICES Closed Circuit TV Digital Video Codec Preliminary Technical Data ADV611/ADV612 FEATURES Programmable "Quality Box" Hardware Frame Rate Reduction 100% Bitstream Compatible with the ADV601 and ADV601LC Precise Compressed Bit Rate Control Field Independent Compression

UFN432

Abstract: mosfet UFN432 UFN 432 UFN431 UFN433
Contextual Info: POWER MOSFET TRANSISTORS 500 Volt, 1.5 Ohm N-Channel UFN430 UFN431 UFN432 UFN433 FEATURES DESCRIPTION • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rosiom and a high transconductance.

la2100

Abstract: OPM3
Contextual Info: L NaC 4 . 4 3 A 2 1 b 9139 \ " S . • ^ 1 ^ T 0 / 1 9 7 6 ^ IÛ ^ 3 0 E m 2 \ B S ^ ñ B / 1970^-11 n 2a 9 8 3 0 ^ 7 0 / 1 9 7 7 % 5.8 I OS fefiv] \ N0lC443A ¿ « / / * % j¡ll¿ :* c.^í: t #* • □ -V h / / • jptw.^ír^< / » / 4 x tr ïjc ï $ IIJ: 0 y -

jb 5531

Abstract: sl 0565 r JE 33 T108 JE 720 transistor
Contextual Info: W L Ì3 \'-7 > Ì> 7 > 9 Compound Transistor FN1L3N U □ > V=7 > ì>7.9 F*91PN PI mm K M o X 5 t £ l*|jK L T X ^ 1 ^ f i : mm 2. 8 ± 0 . 2 1"c 1.5 (R i = 4.7 k£2, R 2= 10 kfì) O o FA1L3N V x itfflx - W R è 1 1“ ( T a = 25 °C ) IH 3 u ? 3

Contextual Info: M CP Multi-Chip Package FLASH M EM ORY & SRAM 8M (x 8/x 16) FLASH MEMORY & 2M (x 8) STATIC RAM MB84VA2002-1o/M B84 VA2003-1o • FEATURES • Power supply voltage of 2.7 to 3.6 V • High performance 100 ns maximum access time • Operating Temperature -2 0 to +85°C

i0485

Abstract: F506 pw510 m86s TS33 X108 TC-6058 transistor 3E l 0534 tc6058
Contextual Info: Compound Transistor Î&î/LF*9M N P N X ti ìs7 \,Wi > lJ □ V n m HMm ¥ f i o;< j 7 x m n .£ f à M lX ^ È - f : m m ) 2 .8 ± 0 .2 ( R i = 22 k Q ) 0 .65 1.5 o F N 1 F 4 Z t 3 > 7°!) 9 > 9 IJ T i È f f l 'C è È t D (T a = 25 °C ) il a «s aE -?-