U922 Search Results

Contextual Info: SFR/U9220 Advanced Power MOSFET FEATURES BVDSS = -200 V Avalanche Rugged Technology RDS on = 1.5 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = -3.1 A Improved Gate Charge Extended Safe Operating Area D-PAK Lower Leakage Current : 10 µA (Max.) @ VDS = -200V

Contextual Info: Advanced SFR/U9224 Power MOSFET FEATURES BV DSS = -250 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^D S o n - ■ Lower Input Capacitance In = -2.5 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 |^A (M a x.) @ V DS = -250V

U9220

Contextual Info: SFR/U9220 Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BV dss = -200 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 jA (Max. @ VDS= -200V

Contextual Info: SFR/U9220 Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss = -200 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 fiA Max. @ VDS = -200V

Contextual Info: SFR/U9224 Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge -2 5 0 V ^D S o n - 2 .4 In ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 |^A (M a x.) @ V DS = -250V

TSF 系列

Abstract: DCC6C
Contextual Info: TOKEN TSF 聲表濾波器 聲表面波濾波器 Saw Filters 產品簡介 聲表濾波器是利用石英鈮酸鋰、鈦酸鋇晶體，具 有壓電效應的材料做成的。當晶體受到機械作用時， 產生與壓力成正比的電場的現象。具有壓電效應的

Contextual Info: SFR/U9220 Advanced Power MOSFET FEATURES BVDSS = -200 V Avalanche Rugged Technology RDS on = 1.5 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = -3.1 A Improved Gate Charge Extended Safe Operating Area D-PAK Lower Leakage Current : 10 µA (Max.) @ VDS = -200V

SFR 252 diode

Abstract: p-channel 250V power mosfet
Contextual Info: SFR/U9224 A d v a n c e d Power MOSFET FEATURES BV • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A {M a x. @ VDS = -250V

EIA-541

Abstract: IRFR120 IRFU120 U120
Contextual Info: PD - 95029A IRFR9220PbF U9220PbF • Lead-Free www.irf.com 1 1/10/05 IRFR/U9220PbF 2 www.irf.com IRFR/U9220PbF www.irf.com 3 IRFR/U9220PbF 4 www.irf.com IRFR/U9220PbF www.irf.com 5 IRFR/U9220PbF 6 www.irf.com IRFR/U9220PbF Peak Diode Recovery dv/dt Test Circuit

p-channel 250V power mosfet

Contextual Info: Advanced SFR/U9224 P o w e r MOSFET FEATURES BV D SS • Lo w e r Input C a pa citance ■ Im proved G ate C harge ^ D S o n = ■ E xtended S afe O pe ra ting A rea ■ Lo w e r Leakage C urrent : 10 |a.A (M ax.) @ V DS = -250V ■ Lo w e r R D S (O N )

irf 157

Abstract: EIA-541 IRFR120 U120
Contextual Info: PD - 95029A IRFR9220PbF U9220PbF • Lead-Free 1 IRFR/U9220PbF 2 IRFR/U9220PbF D-Pak TO-252AA Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information EXAMPLE: THIS IS AN IRFR120 WIT H AS S E MBLY LOT CODE 1234

mosfet yb

Contextual Info: Advanced SFR/U9220 P o w e r MOSFET FEATURES B V D SS • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge ■ E xtended S afe O pe ra ting A rea ■ Lo w e r Leakage C urrent : 10 |a.A M ax. @ V DS = -200V

95029 MARKING

Abstract: IRFR9220PBF
Contextual Info: PD - 95029 IRFR9220PbF U9220PbF • Lead-Free www.irf.com 1 2/19/04 IRFR/U9220PbF 2 www.irf.com IRFR/U9220PbF www.irf.com 3 IRFR/U9220PbF 4 www.irf.com IRFR/U9220PbF www.irf.com 5 IRFR/U9220PbF 6 www.irf.com IRFR/U9220PbF D-Pak TO-252AA Package Outline

Contextual Info: SFR/U9220 Advanced Power MOSFET FEATURES BV DSS = -200 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ^DS on - 1 -5 Q In = -3.1 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = -200V

Contextual Info: SFR/U9224 Advanced Power MOSFET FEATURES BVDSS = -250 V Avalanche Rugged Technology RDS on = 2.4 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = -2.5 A Improved Gate Charge Extended Safe Operating Area D-PAK Lower Leakage Current : 10 µA (Max.) @ VDS = -250V

Contextual Info: SFR/U9224 Advanced Power MOSFET FEATURES BVDSS = -250 V Avalanche Rugged Technology RDS on = 2.4 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = -2.5 A Improved Gate Charge Extended Safe Operating Area D-PAK Lower Leakage Current : 10 µA (Max.) @ VDS = -250V

u930

Contextual Info: Keil Software, Inc. Application Note Using MON251 with the Intel Project Builder 251SB Target Board APNT_102 OVERVIEW This application note provides the information necessary for you to install the Keil 251 monitor program onto an 87C251SB16 microcontroller and operate that monitor in the Intel Project Builder

irfr9220

Abstract: 9221 irfu9220 ELLS 110 ISE Electronics irfr9221 TI55
Contextual Info: IRFR9220/9221 U9220/9221 P-CHANNEL POWER MOSFETS FEATURES D-PAK • Low er R ds on • Improved inductive ruggedness • Fast sw itching tim es • Rugged polysilicon gate cell structure • Low er input capacitance • Extended sa fe operating area

BR0015

Abstract: RT 2070 L TLS251 MU03-2250 MU16 GO 635 LT9000D MV57173 HLMP-0301 HLMP-2350
Contextual Info: u ft fr Z if. r, HP « •T„ = 25'Ci m n.% f í* ¡5 > 2 0 ‘A * deg ■m 100 A/' ft k ë fë « ¡ « il. /, Ir ;m A 1 Vr :V ' 17 \, = 25'C-' ■Ë ti± » ffrS K m n Vu lr 'm A '1 imA:- V; C: 635 4 .8 20 2 .0 20 30 —40—85 25 H L M P-2300 #Lf£ 635

800FP-POT

Abstract: u924 800F-AL01 800F-Q01 800FP-POT5 800F-1YM3 800FP-SM42 800FP-P3PN3G 800FP-SM22 800F-X01
Contextual Info: 19374_5c_covRockwell_q5 5/25/06 10:20 AM Page 2 The Worldwide Push Button Solution Selection Guide Bulletin 800F 19374_5c_covRockwell_q5 5/25/06 10:20 AM Page 3 800F Push Buttons Allen-Bradley 22 mm 800F Push Buttons meet your specific push button needs. • Superior Quality Design

800F-1YM3

Abstract: 800F-AL01 800FM-LMT44 800F-AMRG 800FP-SM42 800FM-LMP44 wiring diagram for 800f-xd7 Allen-Bradley 800FM 800FPSM22PX10 800FP-POT
Contextual Info: 19374_5c_covRockwell_q5 5/25/06 10:20 AM Page 2 The Worldwide Push Button Solution Selection Guide Bulletin 800F 19374_5c_covRockwell_q5 5/25/06 10:20 AM Page 3 800F Push Buttons Allen-Bradley 22 mm 800F Push Buttons meet your specific push button needs. • Superior Quality Design

U420B

Abstract: IRFR P-Channel MOSFET sfr 135 BALLAST CFL U210B U220B cfl ballast CFL lamp Complementary MOSFETs electronic ballast
Contextual Info: Power MOSFETs for Compact Ballast Applications Power MOSFETs for Compact Ballast Applications Optoelectronics Drive Circuit with Passive Components Fairchild's complementary MOSFET solution offers a simplified driving circuit, with a few passive components, that eliminates the saturable auxiliary

transistor BU 921 T

Abstract: 922P BU921 oms 450 BU920T BU922T 921P 922p ic TO3 package RthJC BU920
Contextual Info: 7qsqg37 0056575 □ • / T ^ 3 3 ^ ' 2 . ct SGS-THOMSON bÜ IIS fÆ U922/P/PFI/T S G S-TH0MS0N 3QE D HIGH VOLTAGE POWER DISSIPATION . HIGH VOLTAGE POWER DARLINGTON ■ AUTOMOTIVE IGNITION APPLICATIONS ■ HIGH CURRENT DESCRIPTION The BU920/921/922, BU920P/921P/922P, BU920PFI/BU921PFI/U922PFI and BU920T/921T/922T

equivalent data book of 10N60 mosfet

Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
Contextual Info: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning: