U9214 Search Results

Contextual Info: PD - 9.1658A IRFR/U9214 PRELIMINARY HEXFET Power MOSFET l l l l l l P-Channel Surface Mount IRFR9214 Straight Lead (U9214) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = -250V RDS(on) = 3.0Ω G ID = -2.7A S Description Third Generation HEXFETs from International Rectifier

Contextual Info: SFR/U9214 Advanced Power MOSFET FEATURES BVDSS = -250 V ν Avalanche Rugged Technology RDS on = 4.0 Ω ν Rugged Gate Oxide Technology ν Lower Input Capacitance ID = -1.53 A ν Improved Gate Charge ν Extended Safe Operating Area D-PAK ν Lower Leakage Current : 10 µA (Max.) @ VDS = -250V

Contextual Info: SFR/U9214 Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge -2 5 0 V ^D S o n - 4 .0 In = ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 |^A (M a x.) @ V DS = -250V

Contextual Info: PD - 9.1658A IRFR/U9214 PRELIMINARY HEXFET Power MOSFET l l l l l l P-Channel Surface Mount IRFR9214 Straight Lead (U9214) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = -250V RDS(on) = 3.0Ω G ID = -2.7A S Description Third Generation HEXFETs from International Rectifier

IRF 870

Abstract: HEXFET Power MOSFET P-Channel IRFR9214 IRFU9214 IRF MOSFET 260
Contextual Info: PD - 95375A IRFR/U9214PbF HEXFET Power MOSFET P-Channel Surface Mount IRFR9214 l Straight Lead (U9214) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated l Lead-Free Description l D VDSS = -250V l RDS(on) = 3.0Ω G ID = -2.7A S

FR9214

Contextual Info: International IO R Rectifier P D - 9.1658 IRFR/U9214 PRELIMINARY HEXFET Power MOSFET P-Channel Surface Mount IR F R 9214 StraightLead (U9214N Advanced Process Technology Fast Switching Fully Avalanche Rated VDSS = -250V R ü S (o n ) = 3 . 0 C Ì b = -2.8A

NC243

Contextual Info: SFR/U9214 Advanced Power MOSFET FEATURES BVdss = -250 V • Avalanche Rugged Technology ■ ■ ■ Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge ^ D S o n = 4.0 Q lD = -1.53 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 |jA (Max.) @ VDS = -250V

IRF 870

Abstract: mosfet IRF 870 IRFR9214 IRFU9214
Contextual Info: PD - 95375A IRFR/U9214PbF HEXFET Power MOSFET P-Channel Surface Mount IRFR9214 l Straight Lead (U9214) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated l Lead-Free Description l D VDSS = -250V l RDS(on) = 3.0Ω G ID = -2.7A S

N mosfet 250v 600A

Abstract: IRFR9214 IRFU9214 IRFR P-Channel MOSFET
Contextual Info: PD - 9.1658A IRFR/U9214 PRELIMINARY HEXFET Power MOSFET l l l l l l P-Channel Surface Mount IRFR9214 Straight Lead (U9214) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = -250V RDS(on) = 3.0Ω G ID = -2.7A S Description Third Generation HEXFETs from International Rectifier

gs 1117 ax

Abstract: W923
Contextual Info: PD - 9.1658A International lO R Rectifier IRFR/U9214 PRELIMINARY HEXFET Power MOSFET P-Channel Surface Mount IRFR9214 Straight Lead (U9214) Advanced Process Technology Fast Switching Fully Avalanche Rated V d s s = -2 5 0 V R D S (on) = 3 . 0 Q. ID = - 2 . 7 A

U9214

Contextual Info: Advanced SFR/U9214 P o w e r MOSFET FEATURES BV dss = -250 V • A v a la n c h e R u g g e d T e c h n o lo g y ■ R u g g e d G a te O x id e T e c h n o lo g y ^ D S o n = ■ L o w e r In p u t C a p a c ita n c e ID = -1.53 A ■ Im p ro v e d G a te C h a rg e

N mosfet 250v 600A

Contextual Info: IRFR/U9214 Electrical Characteristics @ TJ = 25°C unless otherwise specified Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs

Contextual Info: PD - 95375 PRELIMINARY IRFR/U9214PbF HEXFET Power MOSFET P-Channel Surface Mount IRFR9214 l Straight Lead (U9214) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated l Lead-Free Description l D VDSS = -250V l RDS(on) = 3.0Ω G ID = -2.7A

ior 481 mosfet

Abstract: IRFR9214 IRFU9214N IOR 235
Contextual Info: 4 PD - 9.1658 International IO R Rectifier IRFR/U9214 PRELIMINARY HEXFET Power MOSFET P-Channel Surface Mount IRFR9214 Straight Lead (U9214N Advanced Process Technology Fast Switching Fully Avalanche Rated VDSS = -250V R D S (on) = 3 0 Q Id = -2.8A

Contextual Info: SFR/U9214 Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 jiA Max. @ VOS = -250V ^D S(on) = 4 .0 Q

Contextual Info: SFR/U9214 Advanced Power MOSFET FEATURES BVDSS = -250 V Avalanche Rugged Technology RDS on = 4.0 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = -1.53 A Improved Gate Charge Extended Safe Operating Area D-PAK Lower Leakage Current : 10 µA (Max.) @ VDS = -250V

Contextual Info: SFR/U9214 Advanced Power MOSFET FEATURES BVDSS = -250 V ν Avalanche Rugged Technology RDS on = 4.0 Ω ν Rugged Gate Oxide Technology ν Lower Input Capacitance ID = -1.53 A ν Improved Gate Charge ν Extended Safe Operating Area D-PAK ν Lower Leakage Current : 10 µA (Max.) @ VDS = -250V

AP60T03GH

Abstract: 10TPB100M 6TPC150M AP60T03 APU9214 APU9214A APU9214AM APU9214M capacitor 0.1MF 1KV capacitor 100MF 16v
Contextual Info: Technology Licensed from International Rectifier U9214 / U9214A 8-PIN SYNCHRONOUS PWM CONTROLLER FEATURES DESCRIPTION Synchronous Controller in 8-Pin Package Operating with single 5V or 12V supply voltage Internal 200KHz Oscillator 400KHz for U9214A

N mosfet 250v 600A

Contextual Info: PD - 9.1658A International IO R Rectifier IR F R /U 9214 PRELIMINARY HEXFET Power MOSFET • • • • • • P-Channel Surface Mount IRFR9214 Straight Lead (U9214) Advanced Process Technology Fast Switching Fully Avalanche Rated Voss = -250V R d s (o ii )

U420B

Abstract: IRFR P-Channel MOSFET sfr 135 BALLAST CFL U210B U220B cfl ballast CFL lamp Complementary MOSFETs electronic ballast
Contextual Info: Power MOSFETs for Compact Ballast Applications Power MOSFETs for Compact Ballast Applications Optoelectronics Drive Circuit with Passive Components Fairchild's complementary MOSFET solution offers a simplified driving circuit, with a few passive components, that eliminates the saturable auxiliary