U913 Search Results

Contextual Info: SFR/U9130 Advanced Power MOSFET FEATURES BVDSS = -100 V Avalanche Rugged Technology RDS on = 0.3 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = -9.8 A Improved Gate Charge Extended Safe Operating Area D-PAK Lower Leakage Current : 10 µA (Max.) @ VDS = -100V

Contextual Info: Advanced SFR/U9130 P o w e r MOSFET FEATURES BVDSS — -100 V • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ^ D S o n = ■ Lo w e r Input C a pa citance lD = -9.8 A ■ Im proved G ate C harge ■ E xtended S afe O pe ra ting A rea

U9130

Abstract: diode 98A G39A
Contextual Info: SFR/U9130 Advanced Power MOSFET FEATURES BVqss = "100 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = 0 -3 ß ■ Lower Input Capacitance lD = -9.8 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 |iA (Max.) @ VDS = -100V

Contextual Info: SFR/U9130 Advanced Power MOSFET FEATURES BVDSS = -100 V n Avalanche Rugged Technology RDS on = 0.3 Ω n Rugged Gate Oxide Technology n Lower Input Capacitance ID = -9.8 A n Improved Gate Charge n Extended Safe Operating Area D-PAK n Lower Leakage Current : 10 µA (Max.) @ VDS = -100V

Contextual Info: SFR/U9130 Advanced Power MOSFET FEATURES BV DSS = -100 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^D S o n - ■ Lower Input Capacitance In = -9.8 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = -100V

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD U9131X Preliminary CMOS IC TONE/PULSE DIALER WITH REDIAL FUNCTION  DESCRIPTION The UTC U9131X series are monolithic ICs that offer the dialing signals in either pulse or tone mode. The UTC U9131X series feature a redial memory.

Contextual Info: SFR/U9130 Advanced Power MOSFET FEATURES BVDSS = -100 V Avalanche Rugged Technology RDS on = 0.3 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = -9.8 A Improved Gate Charge Extended Safe Operating Area D-PAK Lower Leakage Current : 10 µA (Max.) @ VDS = -100V

diode AR S1 98

Contextual Info: SFR/U9130 A dvanced Pow er MOSEET FEATURES B ^ dss - • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^D S o n = ■ Lower Input Capacitance lD = ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10|iA (M ax.) @ VDS = -100V

Contextual Info: Enhanced H IV f e m o iy S u t e r n s DM512K64DTBDM512K72DTE Multibank Burst EDOEDRAM 5 12Kb x 64/512Kb x 72 Enhanced DRAM DIMM b e . Product Specification Features • 8Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache

SMD fuse P110

Abstract: 74c914 transistor b733 transistor SMD p113 EPSON C691 MAIN npn transistor smd w19 smd diode c539 transistor b771 transistor c1015 transistor c1008 011
Contextual Info: 4 3 Figure 1: 2 1 ML300 CPU Table 1: ML300 CPU Virtex-II Pro Based Virtex-II Pro Based Block Diagram Table of Contents D D Infiniband HSSCD2 Dual Gig-E Fiber (Quad) Serial ATA (Dual) Sheet 1: Sheet 2: Sheet 3: Sheet 4: Sheet 5: Sheet 6: Sheet 7: Sheet 8:

CQX 86

Abstract: U832 write-verify RaR8 81 u218 A09T
Contextual Info: DM512K64DTE/DM512K72DTE Multibank Burst EDO EDRAM 512Kb x 64/512Kb x 72 Enhanced DRAM DIMM Enhanced Memory Systems Inc. Product Specification Features 8Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache • Fast 4Mbyte DRAM Array for 30ns Access to Any New Page

800FP-POT

Abstract: u924 800F-AL01 800F-Q01 800FP-POT5 800F-1YM3 800FP-SM42 800FP-P3PN3G 800FP-SM22 800F-X01
Contextual Info: 19374_5c_covRockwell_q5 5/25/06 10:20 AM Page 2 The Worldwide Push Button Solution Selection Guide Bulletin 800F 19374_5c_covRockwell_q5 5/25/06 10:20 AM Page 3 800F Push Buttons Allen-Bradley 22 mm 800F Push Buttons meet your specific push button needs. • Superior Quality Design

n5311

Abstract: ep53A8 N5312 Enpirion Product Marking Specification EP5358HUI EP5358 P5352 EP5387LQI EN5337 ep5358lui
Contextual Info: Enpirion Product Marking Specification Enpirion Product Marking Specification Top Marking Product ID Row 1 Marking See View Product ID Row 1 Marking EN5311QI N5311 2 EP5358HUI ANXX 1 EN5312QI N5312 2 EP5358LUI AKXX 1 EN5322QI N5322 2 EP5362QI P5362 2 EN5335QI

800F-1YM3

Abstract: 800F-AL01 800FM-LMT44 800F-AMRG 800FP-SM42 800FM-LMP44 wiring diagram for 800f-xd7 Allen-Bradley 800FM 800FPSM22PX10 800FP-POT
Contextual Info: 19374_5c_covRockwell_q5 5/25/06 10:20 AM Page 2 The Worldwide Push Button Solution Selection Guide Bulletin 800F 19374_5c_covRockwell_q5 5/25/06 10:20 AM Page 3 800F Push Buttons Allen-Bradley 22 mm 800F Push Buttons meet your specific push button needs. • Superior Quality Design

U10A-14

Abstract: U11A-8 CQX 86 512kx8 dram simm cqx 87 u12A U11C U832 U12A-14 u318
Contextual Info: DM512K64DT6/DM512K72DT6 Multibank EDO EDRAM 512Kb x 64/512Kb x 72 Enhanced DRAM DIMM Enhanced Memory Systems Inc. Product Specification Features • 8Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache ■ Fast 4Mbyte DRAM Array for 30ns Access to Any New Page

PJ 52

Abstract: U1615 U18-18 u1515 U23D-43 U176 U21-18 u1818 L115 U218
Contextual Info: Enhanced Memory Systems Inc. DM1M64DT6/DM1M72DT6 Multibank EOO EDRAM 1Mb x fflM b x 72 Enhanced DRAM DIMM Product Specification Features • l 6Kbytes SRAM Cache Memory for 12ns Random Reads Within Eight Active Pages Multibank Cache ■ Fast 8Mbyte DRAM Array for 30ns Access to Any New Page

U23C-36

Contextual Info: •K p n h o n p p f V i i DM 1M64DT6/DM1M72DT6 Multibank EDOEDRAM m m * d 1 2 ra m d i m m ProductSpecification Features ■ 16Kbytes SAM Cache Memory for 12ns Random Reads Within Eght Active Pages Multi bank CSche ■ Fast 8Mbyte DRAM Array for 30ns Access to Any New Page

U1615

Abstract: u1515 U24A U20-16 U217 U1613 U23C-36 U16-18 U17-16 transistor BMO 123
Contextual Info: DM1M64DT6/DM1M72DT6 Multibank EDO EDRAM 1Mb x 64/1Mb x 72 Enhanced DRAM DIMM Enhanced Memory Systems Inc. Product Specification Features 16Kbytes SRAM Cache Memory for 12ns Random Reads Within Eight Active Pages Multibank Cache • Fast 8Mbyte DRAM Array for 30ns Access to Any New Page

FLUKE 8840a specification

Abstract: FLUKE 8840a 700013 Y8101 capacitor IH 104j FLUKE 83RF PROBE FLUKE 79 series II multimeter diagram 40 HMR 20 EQUIVALENT 40 RB 120 8840A instruction manual U804
Contextual Info: DIGITAL MULTIMETER Instruction Manual FLUKE. 8840A DIGITAL MULTIMETER Instruction Manual PN 879304 December 1991 Rev. 2, 4/94 1994 Fluke Corporation. All rights reserved. Printed in U.S.A. All product names are trademarks of their respective companies FLUKE

d7810

Abstract: L9141 MXM pinout U4900 J9002 K40 fet MARK G4 SOT363 Apple j9002 k50 apple ISL6269
Contextual Info: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. M78-DVT REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE 33 503047 ENGINEERING RELEASED

ESI 2160

Abstract: u332 U11B2 cqx 87 u918
Contextual Info: Enhanced Memory Systems Inc. DM512K64DÎ6/DM512K720T6MultibankEDO EDRAM 512Kb x6 4 /5 m x 72 EnhancedDRAM D m Product Specification Features • 8 Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache ■ Fast 4Mbyte DRAM Array for 30ns Access to Any New Page

r4363

Abstract: L9141 NTC 16D-7 MXM pinout C4253 PP2102 d7810 imac MLB ntc 10d-7 PP1013
Contextual Info: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. M72-DVT REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE 34 503014 ENGINEERING RELEASED

TL0251

Abstract: hp 3101 LD-105VR LD1203LR LD1203VR LD-404VR LD-602VR LD-603VR LD-701VR LD-702VR
Contextual Info: -44T .,= 25’C 1 f* * e ft ï 1 « fi & * L D -105V R o - A m t L D -2Q W R 650 650 LD -404V R m 650 L D -602V R m 650 vF ;m A ì <V i i m i : 10 2 .0 ¡0 1.6 4 10 2 .0 \0 4 IO 2 .0 10 ftlf-ìS * vkff; 20 3 •'C -2 5 -7 5 17 2 .5 x 5 . 0 20 3 -2 5 -8 5 —2 5 — "5

CQX 86

Abstract: U1615 U2-14 U217 u416 CQX 89 CQv 89 512kx8 dram simm u332 u1515
Contextual Info: DM1M64DTE/DM1M72DTE Multibank Burst EDO EDRAM 1Mb x 64/1Mb x 72 Enhanced DRAM DIMM Enhanced Memory Systems Inc. Product Specification Features 16Kbytes SRAM Cache Memory for 12ns Random Reads Within Eight Active Pages Multibank Cache • Fast 8Mbyte DRAM Array for 30ns Access to Any New Page