U234 Search Results

BSP75NTA

Abstract: D8154
Contextual Info: BSP75N 60V self-protected low-side IntellifetTM MOSFET switch Summary Continuous drain source voltage VDS=60V On-state resistance 500m⍀ Maximum nominal load current a 1.1A (VIN = 5V) Minimum nominal load current(c) 0.7A (VIN = 5V) Clamping energy 550mJ

Contextual Info: CHIP TYPE THERMISTOR Ϯ Ϯ Ϯ ϫ Њ ⍀ Ϯ ϩ Ϫ Ϯ Ϯ Ϯ Ϯ Ϯ Њ Ϯ Ϯ ϳ ϳ Ϯ Ϯ ␾ ϩ Ϯ Ϯ Ϯ Ϯ Ϯ Ϯ Ϯ Ϯ Њ Ϯ Њ Ϯ Њ Ϯ Ϯ Ϯ Њ Ϯ Ϯ Њ ϳ Њ ⍀ ⍀ ⍀ ⍀ Ϯ Ϯ Ϯ Ϯ Њ Њ Ϫ ϳϩ Њ Њ Њ 12

SSM2141

Abstract: MS-001 MS-013-AA SSM2142 SSM2142PZ SSM2142SZ ssm2142specifications d0149
Contextual Info: a FEATURES Transformer-Like Balanced Output Drives 10 V RMS Into a 600 ⍀ Load Stable When Driving Large Capacitive Loads and Long Cables Low Distortion 0.006% typ 20 Hz–20 kHz, 10 V RMS into 600 ⍀ High Slew Rate 15 V/␮s typ Low Gain Error Differential or Single-Ended ; 0.7% typ

HP11850C

Abstract: 2743002122 100k variable resistor round body AD844AQ AD844B AD844S EIA-481A AD844 AD844A AD844ACHIPS
Contextual Info: a FEATURES Wide Bandwidth: 60 MHz at Gain of –1 Wide Bandwidth: 33 MHz at Gain of –10 Very High Output Slew Rate: Up to 2000 V/␮s 20 MHz Full Power Bandwidth, 20 V p-p, RL = 500 ⍀ Fast Settling: 100 ns to 0.1% 10 V Step Differential Gain Error: 0.03% at 4.4 MHz

Contextual Info: Silicon Bipolar MMIC Cascadable Amplifier MA4TD03511 V2.00 Case Style 511 Features Cascadable 50⍀ Gain Block 3 dB Bandwidth: DC to 2.0 GHz 12.1 dB Typical Gain @ 1.0 GHz Unconditionally Stable k>1 Hermetic Gold-Ceramic Microstrip Package Tape and Reel Packaging Available

Contextual Info: Silicon Bipolar MMIC Cascadable Amplifier MA4TD0935, MA4TD0936 V3.00 Ceramic Microstrip Case Style Outlines 1, 2, 3 Features ● ● ● ● ● ● Available in short lead version as MA4TD0936. Cascadable 50⍀ Gain Block 3 dB Bandwidth: DC to 4.5 GHz 8.0 dB Typical Gain @ 1.0 GHz

GS2974

Abstract: 720p50 SDI INTERFACE GS2978 hd-SDI driver GS2975 1080I50 progressive video filter
Contextual Info: AUGUST 2006 www.broadcastengineering.com APPLIED TECHNOLOGY NEW PRODUCTS & REVIEWS Gennum’s new chips The equalizer, reclocker and driver are for 3Gb/s video. BY JOHN HUDSON AND NIGEL SETH-SMITH W hen TV networks were first established, video signals were distributed on 75⍀ coaxial

agilent 8112a

Abstract: ad8369 AD6645 AD8369ARU AD8369ARU-REEL7 AD8369EVAL ETC1-1-13 hexadecimal to Binary
Contextual Info: 45 dB Digitally Controlled VGA LF to 600 MHz AD8369* FEATURES Digitally Controlled Variable Gain in 3 dB Steps –5 dB to +40 dB RL = 1 k⍀ –10 dB to +35 dB (RL = 200 ⍀) Less than 0.2 dB Flatness over a +20 MHz Bandwidth up to 380 MHz 4-Bit Parallel or 3-Wire Serial Interface

Contextual Info: SURFACE MOUNT EMI FILTERS CHIP FILTERS NFM60R Series The NFM60R Series is an EIA standard 1206 size version of the NFM61R. Its high rated current 6A and low voltage drop due to small DC resistance (Typ. 3 ~ 4m⍀) are suitable for DC power line use. The feedthrough capacitor provides

ADG749

Abstract: ADG749BKS MO-203AB
Contextual Info: a CMOS 1.8 V to 5.5 V, 2.5 ⍀ 2:1 MUX/SPDT Switch in SC70 Package ADG749 FEATURES 1.8 V to 5.5 V Single Supply 5 ⍀ Max On Resistance 0.75 ⍀ (Typ) On Resistance Flatness Automotive Temperature Range: –40؇C to +125؇C –3 dB Bandwidth > 200 MHz Rail-to-Rail Operation

7805 8PIN

Abstract: ADM8690 ADM8691 ADM8692 ADM8693 ADM8694 ADM8695 MAX690 MAX695 7805 so8
Contextual Info: a FEATURES Upgrade for ADM690/ADM695, MAX690–MAX695 Specified Over Temperature Low Power Consumption 0.7 mW Precision Voltage Monitor Reset Assertion Down to 1 V VCC Low Switch On-Resistance 0.7 ⍀ Normal, 7 ⍀ in Backup High Current Drive (100 mA) Watchdog Timer—100 ms, 1.6 s, or Adjustable

ADG774

Abstract: ADG774BR ADG774BRQ MS-012AC R-16 RQ-16
Contextual Info: a CMOS 3 V/5 V, Wide Bandwidth Quad 2:1 Mux ADG774 FEATURES Low Insertion Loss and On Resistance: 4 ⍀ Typical On-Resistance Flatness <2 ⍀ Bandwidth >200 MHz Single 3 V/5 V Supply Operation Rail-to-Rail Operation Very Low Distortion: <1% Low Quiescent Supply Current 100 nA Typical

equivalent transistor 2N1711

Abstract: MOC3021 application MOC3021 2N1711 AD8402 IN4001 IRGBC40S OP113 OP193 OP284
Contextual Info: a FEATURES Temperature Sensor Includes 100 ⍀ Heater Heater Provides Power IC Emulation Accuracy ؎3 Typ from –40؇C to +100؇C Operation to 150؇C 5 mV/؇C Internal Scale-Factor Resistor Programmable Temperature Setpoints 20 mA Open-Collector Setpoint Outputs

AD9058

Abstract: AD80013 AD8001 AD8001ACHIPS AD8001AN AD8001AR AD8001R-EB AD8001SMD1 4000 watts power amplifier circuit diagram pcb l
Contextual Info: a 800 MHz, 50 mW Current Feedback Amplifier AD8001 FEATURES Excellent Video Specifications RL = 150 ⍀, G = +2 Gain Flatness 0.1 dB to 100 MHz 0.01% Differential Gain Error 0.025؇ Differential Phase Error Low Power 5.5 mA max Power Supply Current (55 mW)

ZXTP19060CG

Abstract: TS16949 ZXTN19060CG ZXTP19060CGTA
Contextual Info: ZXTP19060CG 60V PNP medium transistor in SOT223 Summary BVCEO > -60V BVECO > -7V IC cont = 5A VCE(sat) < -80mV @ -1A RCE(sat) = 50m⍀ PD = 3.0W Complementary part number ZXTN19060CG Description C Packaged in the SOT223 outline this new low saturation PNP transistor

ADG774A

Abstract: ADG774ABRQ RQ-16
Contextual Info: a Low Voltage 400 MHz Quad 2:1 Mux with 3 ns Switching Time ADG774A FEATURES Bandwidth >400 MHz Low Insertion Loss and On Resistance: 2.2 ⍀ Typical On-Resistance Flatness 0.3 ⍀ Typical Single 3 V/5 V Supply Operation Very Low Distortion: <0.3% Low Quiescent Supply Current 1 nA Typical

ZXM61N02F

Abstract: ZXM61N02FTA ZXM61N02FTC
Contextual Info: ZXM61N02F 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=20V; RDS(ON)=0.18⍀; ID=1.7A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching

MO-187

Abstract: ZXMD63P02X ZXMD63P02XTA ZXMD63P02XTC
Contextual Info: ZXMD63P02X DUAL 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=-20V; RDS(ON)=0.27⍀; ID=-1.7A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching

TS16949

Abstract: ZXTN25100DZ ZXTN25100DZTA ZXTP25100CZ
Contextual Info: ZXTN25100DZ 100V NPN high gain transistor in SOT89 Summary BVCEX > 180V BVCEO > 100V BVECO > 6V IC cont = 2.5A VCE(sat) < 100mV @ 1A RCE(sat) = 80m⍀ PD = 2.4W Complementary part number ZXTP25100CZ Description C Packaged in the SOT89 outline this new low saturation NPN transistor

MO-187

Abstract: ZXM64P02X ZXM64P02XTA ZXM64P02XTC zxm64p02
Contextual Info: ZXM64P02X 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=-20V; RDS(ON)=0.090⍀; ID= -3.5A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching

ZXMP7A17K

Abstract: ZXMP7A17KTC 7A17
Contextual Info: ZXMP7A17K 70V P-channel enhancement mode MOSFET Summary VDSS=70V : RDS on =0.16⍀ ID=5.7A Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage

TS16949

Abstract: ZXMS6002G ZXMS6002GTA
Contextual Info: ZXMS6002G 60V N-Channel self protected enhancement mode IntelliFET MOSFET with status indication Summary Continuous drain source voltage VDS = 60V On-state resistance 500m⍀ Nominal load current VIN = 5V 1.4A Clamping energy 550mJ Description Self protected low side MOSFET. Monolithic

ZXMN6A09G

Abstract: TS16949 ZXMN6A09GTA
Contextual Info: ZXMN6A09G 60V SOT223 N-channel enhancement mode MOSFET Summary V BR DSS 60 RDS(on) (⍀) ID (A) 0.040 @ VGS= 10V 7.5 0.060 @ VGS= 4.5V 6.2 Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast

ADG719

Abstract: ADG719BRM ADG719BRT MO-187AA
Contextual Info: a CMOS 1.8 V to 5.5 V, 2.5 ⍀ 2:1 Mux/SPDT Switch in SOT-23 ADG719 FEATURES 1.8 V to 5.5 V Single Supply 4 ⍀ Max On Resistance 0.75 ⍀ (Typ) On Resistance Flatness Automotive Temperature Range: –40°C to +125°C –3 dB Bandwidth > 200 MHz Rail-to-Rail Operation