U111L Search Results

434 289

Abstract: 54175 S085 54151 gen 24lJ IPI04LJ NA220 DTB20
Contextual Info: TGC100M MILITARY SERIES 1-/im CMOS GATE ARRAYS Release 2.0, A PR IL 1989 * AC PERFORMANCE TEST STRUCTURE Fully Characterized for M ilitary Applications — Product Fully Compliant w ith the Requirements of M IL -S T D -883 Paragraph 1.2.1 Is Available — Production Processing Is in Accordance

2N599 JAN

Abstract: 2N599 N468 MIL-S-19491 Y2 TRANSISTOR CONFORMANCE pnp germanium transistor
Contextual Info: M IL-S-19500/186C NAVY 22 June 1964 SUPERSEDING MIL-S-l9500/166B(NAvy) 20 September 1962 (See 6.2) MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, TYPE 2N599 1. SCOPE 1.1 D escription.- This Specification covers the detailed requirem ents for a PNP germanium transistor

Contextual Info: THIS DRAWING CONTAINS INFORMATION PROPRIETARY TO POSITRON 1CAND ITS SUBSIDIARIES. POSITRONIC BELIEVES THE DATA ON THIS DRAWING TO BE RELIABLE, SINCE THE TECHNICAL INFORMATION IS GIVEN FREE OF CHARGE, THE USER EMPLOYS SUCH INFORMATION AT HIS OWN DISCRETION

transistor c103m

Abstract: C103M c105m W41l c105m TRANSISTOR c103m TRANSISTOR C103M equivalent 54175 4013 bt CMOS Sc 54155
Contextual Info: TGC100M MILITARY SERIES 1/im CMOS GATE ARRAYS Release 2.0, APRIL 1989 Fully Characterized for Military Applications — Product Fully Compliant with the Requirements of M IL-STD-883 Paragraph 1.2.1 Is Available — Production Processing Is in Accordance with the General Requirements of

Contextual Info: IL215AT/216AT/217AT Phototransistor Small Outline Surface Mount Optocoupler FEATURES • High Current Transfer Ratio, / F=1.0 mA IL215AT— 20% Minimum IL216AT— 50% Minimum IL217AT— 100% Minimum • Isolation Voltage, 3000 VRMS • Electrical Specifications Similar to