TYPE EM 2222 - E Search Results

Contextual Info: Ö23b32ü 0017300 1 32E D ISIP NPN Silicon Switching Transistor SXT 2222 A SIEMENS/ SPCLi SEMICONDS r - s s '- if • High current gain: 0.1 to 50 0 m A • Low collector-em itter saturation voltage Type M a rk in g O rd e rin g c o d e fo r v e rs io n s in b u lk

type em 2222 - E

Abstract: V/S-808
Contextual Info: 2222 808 2 0 5 mm FILM DIELECTRIC TRIMMERS Housing diameter 5 mm For consu mer arid industria f eq ii 3prnem: QUICK R E F E R E N C E DATA r^min^max - tr 1.6/5 to 3.S/2? pF Rated voltage 150 V Housing diamete- 6 mm Climatic category 40/85/21 for PC versions and

transistor tt 2222

Abstract: TT 2222 npn TRIMMER capacitor 5-60 pF TT 2222 ic TT 2222 BLU99 4312 020 36642
Contextual Info: bSE T> 711002b GGti27fi7 0^7 « P H I N BLU99 BLU99/SL PHILIPS INTERNATIONAL U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in m obile radio transm itters in the u.h.f. band. The transistor is also very suitable fo r application in the 900 MHz m obile radio band.

mu222

Abstract: 1b33
Contextual Info: 2222 809 07 N._ FILM DIELECTRIC TRIMMERS 9 * ft * H igh i-smp-s ratu m type Housing dim&iWiQn-Si 11 mm x 14 mm x 9 mm IrOr ba sic- g rid oi 2,54- mm For professional applseaisons, e-g, fine adj:u-stma«i of h.L Juried c-irciifas, capacitive volume or

Contextual Info: :Y,i.;, j A P P LIC A T IO N 1. For lo w 2. A c c e p t AND p ro file T u n in g - fo rk 4. D iffe re n t 5. M ate sq uare type fo ot w ith 2204D FEATURES a p p lic a tio n 0.6 4 m m 3. pin } f-emaie Header / heacer fo r high. C u rre n t d e s ig n e d custom er

nf029

Abstract: MRA transistor 222280905001 BLV58 016C20 Philips capacitor 013
Contextual Info: Philips Sem iconductors b b ä B IB l □ 0 2 cî 0 b l4 157 W A P X Product specification UHF linear push-pull power transistor 'N AMER PHILIPS/DISCRETE BLV58 b^E ]> Q UICK REFERENCE DATA RF performance at Th = 25 °C in a comm on em itter test circuit. FEATURES

BLY89A

Abstract: transistor h 1061 Transistor bly89a D 1062 transistor transistor ALY 36 transistor 1971 yl 1060 Transistor ALY c2
Contextual Info: P H I L I P S IN T E R N A T IO N A L MAINTENANCE TYPE M IE D H 7 1 1 0 0 2 b 0 0 2 7 ^ 5 1 ^•P H IN BLY89A T~33~/3 V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and m ilitary transmitters with a supply voltage of 13,5 V . The transistor is resistance stabilized. Every

IEC418-1

Abstract: IEC68 jv2222
Contextual Info: 2222 808 2 0 5 mm FILM DIELECTRIC TRIMMERS o Housing diameter 5 mm o For consumer and industrial equipm ent Q UICK REFERENCE D A T A Cm m -^m ax 1.5/5 to 3.5/27 pF Rated voltage 150 V Housing díam ete' 5 rnrn C lim atic category 40/85/21 fo r PC versions and

BLV2045

Abstract: smd TRANSISTOR F2 629 08223
Contextual Info: Philips Semiconductors Product specification UHF power transistor BLV2045 FEATURES PINNING - SOT39QA • E m itter ballasting resistors fo r optim um tem perature profile PIN • Gold m etallization ensures excellent reliability • Internal input and output m atching to achieve high

BLV36

Abstract: vhf linear pulse power amplifier blv36 2222 379 2222 7j vhf linear pulse power amplifier
Contextual Info: N AMER P H I L I P S / D I S C R E T E b 'iE D • b b 5 3 ^ 3 ]> D D S ^ D ll IAPX ^ 12 BLV36 I VHF LINEAR PUSH-PULL POWER TRANSISTOR Tw o NPN silicon planar epitaxial transistor sections in one envelope to be used as a push-pull am plifier. This device is prim arily intended for use in linear V H F television transmitters and transposers vision or

transistor SMD t34

Abstract: t34 transistor MCB030 transistor smd Catalogue transistor SMD Z2 BLU56 k 1358 SMD transistor Z2 transistor 6 pin SMD Z2 UHF TRANSISTOR
Contextual Info: Philips Semiconductors ?HÜÔ2b Data sheet status Product specification date of issue January 1991 □□bT3TG 3TT BiPHIN BLU56 UHF power transistor FEATURES QUICK REFERENCE DATA RF perform ance at Ts < 60 °C in a com m on em itter class-B test circuit see

transistor tt 2222

Abstract: BLY93A TT 2222 ic TT 2222 TT 2222 npn T-33-73 LY93A ROTA E Series IEC134 SOT-56
Contextual Info: PHILIPS INTERNATIONAL MIE D B 711üaEb ÜQ2flQ0ci 1 B P H I N A J L B LLY93 Y93A M A IN T EN A N C E TYPE T~33~/3 V.H.F. POWER TRANSISTOR '\ N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industriar and military transmitters with a supply voltage of 28 V, The transistor is resistance stabilized. Every tran­

BLV57

Contextual Info: N AUER PHILIPS/DISCRETE fciTE D • bb53T31 002^050 bb2 BLV57 U.H.F. LINEAR PUSH-PULL POWER TRANSISTOR Two n-p-n silicon planar epitaxial transistor sections in one envelope to be used as push-pull amplifier, prim arily intended fo r use in linear u.h.f. television transmitters and transposers.

BLV33F

Abstract: RF POWER TRANSISTOR NPN vhf
Contextual Info: Philips Semiconductors Product specification VHF linear power transistor BLV33F FEATURES PINNING - SOT119A • Internally matched input for wideband operation and high power gain PIN SYMBOL • Diffused emitter ballasting resistors fo r an optimum temperature profile

TRIMMER capacitor 160 pF

Abstract: 7z97443 PTFE trimmer capacitor 4312 020 36642
Contextual Info: bSE » Q 711002b QOtiBDlM 5ÖS HIPHIN BLV90/SL _ PHILIPS INTERNATIONAL_ _ U H F POWER TRANSISTOR NPN silicon planar epitaxial transistor designed fo r use in m obile radio transm itters in the 900 MHz band. Features: • diffused emitter-ballasting resistors fo r an optim um temperature profile.

philips resistor 2322

Abstract: 2322 151 BLF241E 2322 151 PHILIPS Philips 2222 114 capacitor ETD 41 035 itt 2222 hf transistor 12W 02 transistor philips potentiometer 2322
Contextual Info: Philips S em iconductors B l b b 5 3 T 31 0 0 2^^27 4 1 fl APX P roduct specification HF/VHF power MOS transistor — ^ — FEATURES BLF241E N AMER PHILIPS/DISCRETE b*lE D PIN CONFIGURATION • High power gain • Easy power control • Gold metallization

BGY122A

Abstract: BGY122B 4330 030 36 ferroxcube
Contextual Info: Philips Semiconductors Product specification UHF amplifier modules BGY122A; BGY122B FEATURES PINNING - SOT388A • S ingle 4.8 V nom inal supply voltage PIN DESCRIPTION • 1.2 W output pow er 1 RF input • E asy control of output pow er by DC voltage 2 Vc

122d transistor

Abstract: Si 122D 122d BLU11/Si 122D transistor 4312
Contextual Info: bSE. T> 711002b 00bS7D0 47T M P H I N BLU11/SL PHILIPS INT ERN ATI ON AL U.H.F. POW ER TR A N S IS TO R N-P-N silicon planar epitaxial transistor prim arily intended fo r use in mobile transmitters in the 470 MHz band. Features • multi-base structure and emitter-ballasting resistors fo r an optim um temperature profile.

transistor tt 2222

Abstract: transistor tt 2222 vertical TT 2222 Philips 2222 capacitor for transistor tt 2222 philips Trimmer 60 pf SOT123 Package 2322 151 51005 sot123 trimmer PT 10
Contextual Info: Philips S em iconductors m b b S B 'Ì B l Q 0 S CJ,Ì D C1 4 T 2 BBA PX Product specification VHF power MOS transistor — BLF225 • N AfIER PHILIPS/DISCRETE FEATURES b'ìE D PIN CONFIGURATION • Easy power control • Good thermal stability • Withstands full load mismatch.

B303D

Abstract: TT 2222 npn transistor tt 2222 transistor npn 2xi transistor sot t06 FTC 960 trimmer PT 10 TT 2222 ka band transistor
Contextual Info: b5E » H 71106Eb D0b3DEÛ 07T « P H I N BLV91/SL PHILIPS INTERNATIONAL UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor designed fo r use in mobile radio transm itters in the 900 MHz band. Features: • diffused emitter-ballasting resistors fo r an optim um temperature profile.

4312 020 36640

Abstract: ferroxcube wideband hf choke
Contextual Info: PHILIPS INTERNAT ION AL b5E D 751 I IPHIN Ei 711002b BLV75/12 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in m obile radio transm itters in the 175 MHz communications band. Features • multi-base structure and emitter-ballasting resistors fo r an optim um temperature profile

Contextual Info: N AMER PHILIPS/DISCRETE bBE D • bbSBIBl 002flflS4 b7fl * A P X BLU60/12 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor in SOT-119 envelope prim arily intended fo r use in mobile radio transmitters in the 470 MHz communications band. Features

transistor rf cm 1104

Abstract: BLY92A transistor 1971 3309 power transistor transistor VHF 1104 PHILIPS FW 36 20 431202036640 choke T3309 bly92 transistor c 1971
Contextual Info: 11 PHILIPS INTERNATIONAL MAINTENANCE TYPE 711DÛ2b DQS7TÌ3 3 E IPHIN 41E D BLY92A T -3 3 -0 9 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and military transmitters with a nominal supply voltage o f 28 V. The transistor Is resistance stabilized and

ti 72741

Abstract: MCA81 MCB835 BLF521 URA989 MCB836 MCB831 cis-04 transistor 9567
Contextual Info: Philips Semiconductors ^53^31 DD3DDÛh STD lÂPX Product specification UHF power MOS transistor BLF521 N AMER PHILIPS/DISCRETE FEATURES b^E 3> PIN CONFIGURATION • High power gain • Easy power control • Gold metallization • Good thermal stability • Withstands full load mismatch