TVR2 Search Results

Contextual Info: TVR2B,TVR2G,TVR2J TOSHIBA Fast Recovery Diode Silicon Diffused Type TVR2B,TVR2G,TVR2J TV Applications fast recovery Unit: mm • Average Forward Current: IF (AV) = 0.5 A (Ta = 50°C) • Repetitive Peak Reverse Voltage: VRRM = 100 to 600 V • Reverse Recovery Time: trr = 5 to 20 µs

TVR2D

Contextual Info: SIYU R TVR2B . TVR2J Fast Recovery Rectifier Reverse Voltage 100 to 600 V Forward Current 0.5 A DO-41 Features 1.0 25.4 MIN .034(0.9) DIA .028(0.7) . Low reverse leakage . High forward surge capability . High temperature soldering guaranteed: .205(5.2)

Contextual Info: TVR2B-TVR2J Fast Recovery Rectifiers VOLTAGE RANGE: 100 - 600 V CURRENT: 0.5 A Features DO - 41 Low cost Diffused junction Low leakage Low forward voltage drop High current capability Easily cleaned with Freon,Alcohol,Isopropanol and similar solvents The plastic material carries U/L recognition 94V-0

Contextual Info: TVR2B,TVR2G,TVR2J TOSHIBA Fast Recovery Diode Silicon Diffused Type TVR2B,TVR2G,TVR2J TV Applications fast recovery Unit: mm • Average Forward Current: IF (AV) = 0.5 A (Ta = 50°C) • Repetitive Peak Reverse Voltage: VRRM = 100 to 600 V • Reverse Recovery Time: trr = 5 to 20 µs

Contextual Info: TVR2B,TVR2G,TVR2J TOSHIBA Fast Recovery Diode Silicon Diffused Type TVR2B,TVR2G,TVR2J TV Applications fast recovery Unit: mm • Average Forward Current: IF (AV) = 0.5 A (Ta = 50°C) • Repetitive Peak Reverse Voltage: VRRM = 100 to 600 V • Reverse Recovery Time: trr = 5 to 20 µs

Contextual Info: TVR2B,TVR2G,TVR2J TOSHIBA Fast Recovery Diode Silicon Diffused Type TVR2B, TVR2G, TVR2J TV Applications fast recovery Unit: mm • Average Forward Current: IF (AV) = 0.5 A (Ta = 50°C) • Repetitive Peak Reverse Voltage: VRRM = 100 to 600 V • Reverse Recovery Time: trr = 5 to 20 µs

TVR2B

Abstract: marking CS TOSHIBA
Contextual Info: TO SH IB A TVR2B,TVR2G,TVR2J TOSHIBA FAST RECOVERY DIODE TVR3R • w a r n SILICON DIFFUSED TYPE TVR1G mmr g ■ w ■ m TVR3I g m w ■ « v TV APPLICATIONS FAST RECOVERY U nit in mm • Average Forward Current If (AV) =0-5A (Ta = 50°C) • Repetitive Peak Reverse Voltage

VR2B

Contextual Info: TVR2B,TVR2G,TVR2J TOSHIBA Fast Recovery Diode Silicon Diffused Type TVR2B, TVR2G, TVR2J TV Applications fast recovery • Average Forward Current: IF (AV) = 0.5 A (Ta = 50°C) • Repetitive Peak Reverse Voltage: VRRM = 100 to 600 V • Reverse Recovery Time: trr = 5 to 20 µs

varistor 20681

Abstract: TVR20681 TVR diode varistor symbol varistor tvr tvr 20681 B 560 THINKING Varistor 230j1
Contextual Info: THINKING THINKING THINKING THINKING Specification of TVR Varistor for Surge Voltage Suppression TVR20681 KS PART NO . _ R20681KS CUSTOMER P/N . _ TVR 20681 1. Dimensions D ±1 P =10 d L T ITEM D MAX. 23.5 L MIN. 26 d P T 1.02

Contextual Info: TVR2B,TVR2G,TVR2J TOSHIBA Fast Recovery Diode Silicon Diffused Type TVR2B,TVR2G,TVR2J TV Applications fast recovery Unit: mm • Average Forward Current: IF (AV) = 0.5 A (Ta = 50°C) · Repetitive Peak Reverse Voltage: VRRM = 100 to 600 V · Reverse Recovery Time: trr = 5 to 20 µs

TVR2D

Contextual Info: BL GALAXY ELECTRICAL TVR2B-TVR2J VOLTAGE RANGE: 100 - 600 V CURRENT: 0.5 A FAST RECOVERY RECTIFIER FEATURES Low cost Diffused junction Low leakage Low forward voltage drop High current capability Easily cleaned with Freon,Alcohol,Isopropanol and similar solvents

TVR20

Abstract: TVR-20 TVR 05 diode TVR diode HIGH VOLTAGE DIODE 20kv 20KV DIODE TV flyback Flyback Xfmr 20KV 20kv flyback
Contextual Info: TVR-20 HIGH VOLTAGE FAST RECOVERY SILICON DIODE FOR CRT APPLICATIONS TYPE - TVR20 This high voltage fast recovery diode was developed for assembly or encapsulation and is intended primarily for use as a building block in the assembly of high voltage circuits

Contextual Info: SIYU R TVR2B / TVR2D / TVR2G / TVR2J 塑封快恢复整流二极管 Plastic Fast Recover Rectifier Reverse Voltage 100 to 600V Forward Current 0.5A 反向电压 100 - 600 V 正向电流 0.5 A 特征 Features DO-41 ・低的反向漏电流 Low reverse leakage

Contextual Info: TH09/2479 TH97/2478 IATF 0113686 SGS TH07/1033 www.eicsemi.com TVR2B/D/G/J FAST RECOVERY RECTIFIER DIODES PRV : 100 - 600 Volts Io : 0.5 Ampere D2 FEATURES : * * * * * * * High current capability High surge current capability High reliability Low reverse current

Contextual Info: TVR2B/D/G/J FAST RECOVERY RECTIFIER DIODES PRV : 100 - 600 Volts Io : 0.5 Ampere D2 FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency

Contextual Info: TVR2B,TVR2G,TVR2J TOSHIBA Fast Recovery Diode Silicon Diffused Type TVR2B,TVR2G,TVR2J TV Applications fast recovery Unit: mm • Average Forward Current: IF (AV) = 0.5 A (Ta = 50°C) · Repetitive Peak Reverse Voltage: VRRM = 100 to 600 V · Reverse Recovery Time: trr = 5 to 20 µs

toshiba diode do-41

Abstract: VR2B toshiba diode "do-41" toshiba marking code diode
Contextual Info: TO SH IBA TVR2B,TVR2G,TVR2J TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TVR2B, TVR2G, TVR2J Unit in mm TV APPLICATIONS FAST RECOVERY • • • Average Forward Current Repetitive Peak Reverse Voltage Reverse Recovery Time l F (AV) = 0.5 A (Ta = 50°C)

TVR-2D

Contextual Info: SIYU R TVR2B / TVR2D / TVR2G / TVR2J Plastic Fast Recover Rectifier 塑封快恢复整流二极管 Reverse Voltage 100 to 600V Forward Current 0.5A 反向电压 100 - 600 V 正向电流 0.5 A 特征 Features DO-41 •低的反向漏电流 Low reverse leakage

TVR2

Abstract: TVR2D
Contextual Info: TVR2B/D/G/J FAST RECOVERY RECTIFIER DIODES PRV : 100 - 600 Volts Io : 0.5 Ampere D2 FEATURES : * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency

Contextual Info: T O SH IB A TVR2B,TVR2G,TVR2J TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TVR2B, TVR2G, TVR2J Unit in mm TV APPLICATIONS FAST RECOVERY • • • Average Forward Current : If (AV) =0.5A (Ta = 50°C) Repetitive Peak Reverse Voltage : V t?:r m = 100V~600V

Contextual Info: TVR2B,TVR2G,TVR2J TOSHIBA Fast Recovery Diode Silicon Diffused Type TVR2B,TVR2G,TVR2J TV Applications fast recovery Unit: mm • Average Forward Current: IF (AV) = 0.5 A (Ta = 50°C) • Repetitive Peak Reverse Voltage: VRRM = 100 to 600 V • Reverse Recovery Time: trr = 5 to 20 µs

Contextual Info: TVR2B,TVR2G,TVR2J TOSHIBA Fast Recovery Diode Silicon Diffused Type TVR2B,TVR2G,TVR2J TV Applications fast recovery Unit: mm • Average Forward Current: IF (AV) = 0.5 A (Ta = 50°C) • Repetitive Peak Reverse Voltage: VRRM = 100 to 600 V • Reverse Recovery Time: trr = 5 to 20 s

xf 017

Abstract: zx 15 itt SFT243 4096U D85H 6.3 UTE cxd2517 m6 90 v-0 CMP12 SM5902
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SR400FV-70

Abstract: SR400FV-80 SRH25C SWH-10 SWH2-16 SWH2-25ED SWHD2-16 SWHD2-20
Contextual Info: - M m s SR400FH-60 SR400FV-70 SR400FV—80 SRH25C SWH2-16 SWH2-20 SWH2-25ED SffH-08 SWH-10 SWHD2-16 SWHD2-20 SWHD2-25 S*HD3-16 SWHD3-20 T51A T51B T51C T52A T52B T52C TD-13 TD-15 TD-15H TFR1L TFR1N TFR1Q TFR1T TFR2L TFR2N TFR2Q TFR2T TFR4L TFR4N TFR4Q TFR4T