TVR1 Search Results

VR1G

Contextual Info: TVR1B,TVR1G,TVR1J TOSHIBA Fast Recovery Diode Silicon Diffused Type TVR1B,TVR1G,TVR1J TV Applications fast recovery Unit: mm • Average Forward Current: IF (AV) = 0.5 A (Ta = 65°C) • Repetitive Peak Reverse Voltage: VRRM = 100, 400, 600 V • Reverse Recovery Time: trr = 2.0 µs

vr1g

Contextual Info: TVR1B,TVR1G,TVR1J TOSHIBA Fast Recovery Diode Silicon Diffused Type TVR1B, TVR1G, TVR1J TV Applications fast recovery Unit: mm • Average Forward Current: IF (AV) = 0.5 A (Ta = 65°C) • Repetitive Peak Reverse Voltage: VRRM = 100, 400, 600 V • Reverse Recovery Time: trr = 2.0 µs

Contextual Info: SIYU R TVR1B / TVR1D / TVR1G / TVR1J 塑封快恢复整流二极管 Plastic Fast Recover Rectifier Reverse Voltage 100 to 600V Forward Current 0.5A 反向电压 100 - 600 V 正向电流 0.5 A 特征 Features DO-41 •低的反向漏电流 Low reverse leakage

TVR2B

Abstract: marking CS TOSHIBA
Contextual Info: TO SH IB A TVR2B,TVR2G,TVR2J TOSHIBA FAST RECOVERY DIODE TVR3R • w a r n SILICON DIFFUSED TYPE TVR1G mmr g ■ w ■ m TVR3I g m w ■ « v TV APPLICATIONS FAST RECOVERY U nit in mm • Average Forward Current If (AV) =0-5A (Ta = 50°C) • Repetitive Peak Reverse Voltage

toshiba diode "do-41"

Abstract: tvr1 TVR1B
Contextual Info: TO SH IB A TVR1 B,TVR1 G,TVR1 J TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE T V R 1 Rmmr g TX /R lfi g Tm V R 1 I m • w ■ « ■ w ■ m ■ w ■ « ■ v Unit in mm TV APPLICATIONS FAST RECOVERY • Average Forward Current !f (AV) =0-5A (Ta = 65°C)

TVR1B

Abstract: toshiba diode "do-41"
Contextual Info: SILICON DIFFUSED TYPE FAST RECOVERY DIODE - O • • • TVR1B/G/J TV APPLICATIONS. FAST RECOVERY U n it in mm Average Forward Current : I f (AV) =0.5A (Ta = 65°C) Repetitive Peak Reverse Voltage : Vr r m = 100V~600V Reverse Recovery Time : tr r =2.0^s

Contextual Info: T O SH IB A TVR1 B,TVR1G,TVR1 J TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TVR1B, TVR1G, TVR1J Unit in mm TV APPLICATIONS FAST RECOVERY • • • Average Forward Current : I f ( A V ) =0.5A (Ta = 65°C) Repetitive Peak Reverse Voltage : V t?:rm = 100V~600V

vr1g

Abstract: Diode VR1B DIODE VR1J VR1B VR1J
Contextual Info: TO SH IBA TVR1B,TVR1G,TVR1J TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TVR1B, TVR1G, TVR1J Unit in mm TV APPLICATIONS FAST RECOVERY • • • Average Forward Current Repetitive Peak Reverse Voltage Reverse Recovery Time (AV) = 0.5 A (Ta = 65°C)

Contextual Info: SIYU R TVR1B / TVR1D / TVR1G / TVR1J 塑封快恢复整流二极管 Plastic Fast Recover Rectifier Reverse Voltage 100 to 600V Forward Current 0.5A 反向电压 100 - 600 V 正向电流 0.5 A 特征 Features DO-41 ・低的反向漏电流 Low reverse leakage

Contextual Info: TH09/2479 TH97/2478 www.eicsemi.com TVR1B/G/J IATF 0113686 SGS TH07/1033 FAST RECOVERY RECTIFIER DIODES PRV : 100 - 600 Volts Io : 0.5 Ampere DO - 41 FEATURES : * * * * * * * High current capability High surge current capability High reliability Low reverse current

Contextual Info: TVR1B/G/J FAST RECOVERY RECTIFIER DIODES PRV : 100 - 600 Volts Io : 0.5 Ampere DO - 41 FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency

TVR1D

Contextual Info: SIYU R TVR1B . TVR1J Fast Recovery Rectifier Reverse Voltage 100 to 600 V Forward Current 0.5 A DO-41 Features 1.0 25.4 MIN .034(0.9) DIA .028(0.7) . Low reverse leakage . High forward surge capability . High temperature soldering guaranteed: .205(5.2)

vr1g

Contextual Info: TVR1B,TVR1G,TVR1J TOSHIBA Fast Recovery Diode Silicon Diffused Type TVR1B,TVR1G,TVR1J TV Applications fast recovery Unit: mm • Average Forward Current: IF (AV) = 0.5 A (Ta = 65°C) • Repetitive Peak Reverse Voltage: VRRM = 100, 400, 600 V • Reverse Recovery Time: trr = 2.0 s

vr1g

Abstract: VR1B DIODE VR1J toshiba last digit of year
Contextual Info: TVR1B,TVR1G,TVR1J TOSHIBA Fast Recovery Diode Silicon Diffused Type TVR1B,TVR1G,TVR1J TV Applications fast recovery Unit: mm • Average Forward Current: IF (AV) = 0.5 A (Ta = 65°C) · Repetitive Peak Reverse Voltage: VRRM = 100, 400, 600 V · Reverse Recovery Time: trr = 2.0 µs

vr1g

Abstract: Diode VR1B VR1B VR1J 1J TOSHIBA
Contextual Info: TVR1B,TVR1G,TVR1J TOSHIBA Fast Recovery Diode Silicon Diffused Type TVR1B,TVR1G,TVR1J TV Applications fast recovery Unit: mm • Average Forward Current: IF (AV) = 0.5 A (Ta = 65°C) • Repetitive Peak Reverse Voltage: VRRM = 100, 400, 600 V • Reverse Recovery Time: trr = 2.0 µs

Contextual Info: BL GALAXY ELECTRICAL TVR1B - TVR1J VOLTAGE RANGE: 100- 600 V CURRENT: 0.5 A HIGH EFFICIENCY RECT IFIER FEATURES DO - 41 Low cos t Diffus ed junction Low leakage Low forward voltage drop High current capability Eas ily cleaned with freon, alcohol, ls opropanol

TVR1GPP

Contextual Info: TVR1GPP GLASS PASSIVATED FAST RECOVERY RECTIFIER VOLTAGE: 400V CURRENT: 1.0A FEATURE DO - 41\DO- 204AL Molded case feature for auto insertion High current capability Low leakage current Fast switching capability High temperature soldering guaranteed 250°C /10sec/0.375" lead length at 5 lbs tension

TVR1B

Abstract: TVR1D
Contextual Info: SIYU R TVR1B / TVR1D / TVR1G / TVR1J 塑封快恢复整流二极管 Plastic Fast Recover Rectifier Reverse Voltage 100 to 600V Forward Current 0.5A 反向电压 100 - 600 V 正向电流 0.5 A 特征 Features DO-41 1.0 25.4 MIN •反向漏电流低 .034(0.9)

Contextual Info: TVR1B-TVR1J High Efficiency Rectifiers VOLTAGE RANGE: 100- 600 V CURRENT: 0.5 A Features DO - 41 Low cos t Diffus ed junction Low leakage Low forward voltage drop High current capability Eas ily cleaned with freon, alcohol, ls opropanol and s im ilar s olvents

vr1g

Abstract: TOSHIBA DIODE DATABOOK VR1j
Contextual Info: TVR1B,TVR1G,TVR1J TOSHIBA Fast Recovery Diode Silicon Diffused Type TVR1B,TVR1G,TVR1J TV Applications fast recovery Unit: mm • Average Forward Current: IF (AV) = 0.5 A (Ta = 65°C) • Repetitive Peak Reverse Voltage: VRRM = 100, 400, 600 V • Reverse Recovery Time: trr = 2.0 µs

TVR1

Contextual Info: TVR1B/G/J FAST RECOVERY RECTIFIER DIODES PRV : 100 - 600 Volts Io : 0.5 Ampere DO - 41 FEATURES : * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency

TVR10G

Abstract: DO-41
Contextual Info: TVR10G SINTERED GLASS JUNCTION FAST SWITCHING PLASTIC RECTIFIER VOLTAGE: 600V CURRENT: 1.0A FEATURE DO-41\DO-204AL High temperature metallurgically bonded construction Sintered glass cavity free junction Capability of meeting environmental standard of MIL-S-19500

VR1G

Abstract: Diode VR1B
Contextual Info: TOSHIBA TVR1B,TVR1G,TVR1J TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TVR1B, TVR1G, TVR1J Unit in mm TV APPLICATIONS FAST RECOVERY • • • Average Forward Current Repetitive Peak Reverse Voltage Reverse Recovery Time (AV) = 0.5 A (Ta = 65°C) V r r M = 100 V - 600 V

tvr10g

Abstract: tvr10
Contextual Info: SIYU R TVR10G Plastic Fast Recover Rectifiers 塑封快恢复整流二极管 反向电压 400V 正向电流1.0A Reverse Voltage 400V Forward Current 1.0A 特征 Features DO-41 低的反向漏电流 25.4 MIN Low reverse leakage 0.8±0.1 较强的正向浪涌承受能力