TUNNEL JUNCTION DIODE Search Results

back Tunnel diode

Abstract: metal detectors circuit "back diode" point contact diode tunnel diode application
Contextual Info: D fU M iu 'H C General Infotmation RF detection is achieved through utilization of the nonlinear, current-voltage characteristics of a semiconducting junction. Two fundamental detector diode types are used; silicon-based, Schottky barrier and germanium-based, tunnel or back diodes.

back Tunnel diode

Abstract: Tunnel Diode tunnel diode application
Contextual Info: Detector Overview General Inform ation RF detection is achieved through utilization o f th e nonlinear, current-voltage characteristics o f a semiconducting junction. Two fundamental d ete cto r diode types are used; silicon-based, Schottky barrie r and germanium-based, tunnel o r back diodes.

BD400

Abstract: TD-429 1N3712 in3712 TD-427 TD-423 TD-437 TD-408 TD-401 TD-422
Contextual Info: TUNNEL DIODES MICROWAVE Cj :> Vp Vv Type’ Peak Current Typ. mA Peak Vo Itaiie Typ (mV) Valley Voltage Typ. (mV) V^ Forward Peak Voltage Typ. (mV) (Ip/lv) Peak to Valley Ratio Typ. —R Negative R e sista n ce Rs S e rie s R esista n ce Max. Junction C ap acitan ce

tunnel junction diode

Abstract: tunnel diode high frequency metal detectors circuit "tunnel diode" chip assembly Detectors - Diode ml7700 TUNNEL DIODE diode tunnel
Contextual Info: DETECTORS ML 7700-0000 Series DETECTORS 0.1 TO 18.0 GHz FEATURES ♦ Schottky & Tunnel Diode ♦ Limiter Detectors ♦ Broad Frequency Ranges ♦ High Sensitivities ♦ Coaxial & Drop-in DESCRIPTION The M /A -CO M Ltd detector range uses both silicon based Schottky barrier diodes and germ anium based tunnel diodes.

back Tunnel diode

Abstract: mbd1057 DATASHEET TUNNEL DIODE MBD2057-C18 MBD3057 "tunnel diode" chip assembly Tunnel diode MBD1057-E28 tunnel diode application tunnel diodes
Contextual Info: Planar Back Tunnel Diodes MBD Series Description Features The MDB series of back (tunnel) diodes are fabricated on germanium substrates using passivated, planar construction and gold metallization for reliable operation up to +110 °C. Unlike the standard tunnel diode IP is minimized

MBD5057

Contextual Info: Planar Back Tunnel Diodes MBD Series Description Features The MDB series of back (tunnel) diodes are fabricated on germanium substrates using passivated, planar construction and gold metallization for reliable operation up to +110 °C. Unlike the standard tunnel diode IP is minimized

back Tunnel diode

Abstract: "back diode" Germanium power DIODE tunnel MBD back diode
Contextual Info: METELICS 11E CORP D I b OS 1 35 2 0 0Ü Q 13 0 3 IRLANAR BACK TUNNEL DIODES i lo w freq u en cy Detector Series (To 2 GHz) FEATURES • • • • • Rugged Germanium Planar Construction Excellent Temperature Stability No DC Bias Required Wide Video Bandwidth

backward diode

Abstract: tunnel diode General Electric "backward diode"
Contextual Info: P j p i GE C P L E S S E Y CT3508-1.2 MIXER & DETECTOR DIODES - INTRODUCTION M ETAL S E M IC O N D U C TO R SC H O TTK Y BA RRIER DIO DES INTRODUCTION A mixer is a sensitive receiver circuit which makes use of the nonlinear properties of a mixer diode to produce a

MBD3057-C18

Abstract: MBD2057-C18 DIODE e26 back Tunnel diode MBD1057
Contextual Info: JMAR BACK TUNNEL DIODES m «|h Frequency Detector Series (To 18 GHz) U L = FEATURES • • • • • Rugged Germanium Planar Construction Excellent Temperature Stability No DC Bias Required Wide Video Bandwidth MIL-STD-19500 & 883 Capability M AXIM UM RATINGS

MBD3057-C18

Abstract: MBD5057-C18 back Tunnel diode MBD-3057-C18 MIL-STD-195 MBD5057 MBD2057-C18 MBD-1057-C18 MBD1057
Contextual Info: PLANAR BACK TUNNEL DIODES m T ^ High Frequency D e te c to r Series (To 18 GHz) IB = oti^ rationS FEATURES • Rugged Germanium Planar Construction • Excellent Temperature Stability • No DC Bias Required • Wide Video Bandwidth • MIL-STD-195 00 & 883 Capability

MBD3057-C18

Abstract: back Tunnel diode
Contextual Info: PLANAR BACK TUNNEL DIODES IM ” High Frequency D e te cto r Series (To 18 GHz) [ P — o f I" cc?r to iw i ? n * FEATURES • • • • • R u g g e d G e rm a n iu m P la n a r C o n s tru c tio n E x c e lle n t T e m p e ra tu re S ta b ility N o D C Bias R e q u ire d

MBD3057-C18

Abstract: MBD2057-C18 MBD-1057-C18 mbd1057-c18 MBD-2057-C18 back Tunnel diode mbd 1057 MBD-3057-C18 MBD-3057-H20 "back diode"
Contextual Info: ISPMAR BACK TUNNEL DIODES Iflgl i Frequency Detector Series (To 18 GHz) metelics ID CORPORATION FEATURES • • • • • R u g g e d G e rm a n iu m P lanar Construction Excellent T e m p e ra tu re Stability N o D C Bias R eq uired W id e V id e o B andw idth

LXHL-LM5C

Abstract: Amicon luxeon 1 watt luxeon 1w LXHL-Lr5C luxeon 3 watt amicon adhesive kit AB05 LXHL-LB5C UV led diode 200 nm peak 1W
Contextual Info: power light source TM Luxeon V Star Technical Data DS30 Luxeon is a revolutionary, energy efficient and ultra compact new light source, combining the lifetime and reliability advantages of Light Emitting Diodes with the brightness of conventional lighting.

luxeon 5 watt

Abstract: R-THETA Aluminum Base LED PCB luxeon 10 watt Custom Luxeon Design Guide luxeon 3 watt Luxeon 2002 thermal design AB05 luxeon drive
Contextual Info: application brief AB23 Thermal Design Considerations for Luxeon 5 Watt Power Light Sources Luxeon 5 Watt Power Light Sources generate about four times the power dissipation of Luxeon 1 Watt Power Light Sources, making effective thermal design especially

DPGAS3S09

Abstract: DPGAS1S09 laser diode 905nm optoelectronics perkinelmer DTS0305 1500-nm DPGAC1S
Contextual Info: P R E L I M I N A R Y SENSOR SOLUTIONS 905nm Epitaxial Double Cavity Multi-Quantum Well InGaAs Pulsed Laser Diode DPGA Series Overview This EPI-cavity structure possesses the same 25˚ beam divergence in the perpendicular direction as the PGA series product line, as well as

H31D

Abstract: MP4T243 MP42001 MP4T56800 MP4T6310 MP4T6325 MP4T6365 MP4T645 MP4T6825 MP4T856
Contextual Info: Microwave Table of Contents DIODES Mircowave Schottky Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Zero bias Schottky Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

tpgas1s09

Abstract: TPGAS1S03 TPGAS3S09 dpgas1s09 laser weapon TPGAS2S09 DPGAS3S09 AEL Crystals 43 series lidar ACC tunnel diode GaAs
Contextual Info: D A T A S H E 905 nm Multi Active Area Epitaxially Stacked Multi Quantum Well Strained E S E N S O R S O LUTI O N S Multi EPI-Cavity Lasers, DPGA & TPGA Series InGaAs Pulsed Epi-Cavity Laser Diodes T Comparison of the optical Near Field of Laser Diodes with one, two or three Epitaxial Layers.

tunnel diodes

Abstract: germanium diode equivalent tunnel diode germanium TUNNEL DIODE germanium diode tunnel junction diode AEY16 AEY13 AEY15 germanium diode junction capacitance
Contextual Info: GERMANIUM T U N N EL DIODES AEYI3 AEYI5 AEYI6 TEN TA TIV E DATA Germanium tunnel diodes for use as low noise microwave am plifiers in S-band. QUICK REFERENCE DATA S-band f Operating frequency AEY13 AEY15 f min. r N s R esisitive cut-off frequency 6.0 8.0 Noise m easure

Loctite 3873

Abstract: SP944 amicon luxeon 1w AB05 Luxeon I Star LED LINE12 LOCTITE PASTE
Contextual Info: application brief AB05 Thermal Design Using Luxeon Power Light Sources Luxeon Power Light Sources provide the highest light output with the smallest footprint of any Light Emitting Diodes LEDs in the world. This is due, in part, to Luxeon’s ground breaking thermal design. Luxeon is the first LED solution to separate thermal

Amicon

Abstract: AB05 luxeon 1w EPO TEK epoxy Amicon die attach adhesive Custom Luxeon Design Guide Luxeon I Star LED E3503
Contextual Info: Application Brief AB05 Thermal Design Using LUXEON Power Light Sources Introduction LUXEON® Power Light Sources provide the highest light output with the smallest footprint of any Light Emitting Diodes LEDs in the world. This is due, in part, to LUXEON's ground breaking thermal design.

Contextual Info: D A T A S H E 905 nm Multi Active Area Epitaxially Stacked Multi Quantum Well Strained E S E N S O R S O LUTI O N S Multi EPI-Cavity Lasers, DPGA & TPGA Series InGaAs Pulsed Epi-Cavity Laser Diodes T Comparison of the optical Near Field of Laser Diodes with one, two or three Epitaxial Layers.

back Tunnel diode

Abstract: SCR WITH I-V CHARACTERISTICS tunnel diode
Contextual Info: GENERAL INFORMATION 1 Inside Vantis’ EE CMOS PLD Technology TECHNOLOGY DESCRIPTION The EE CMOS technology used by Vantis in programmable logic is a single-poly, double- or triple-metal n-well process. It has been optimized for high-speed programmable logic devices,

schematic diagram of energy saving device

Abstract: scr inverter schematic circuit Power INVERTER schematic circuit circuit diagram of energy saving device dc to ac inverter by scr SCR Inverter datasheet Tunnel diode schematic diagram of power inverter SCR gate Control IC back Tunnel diode
Contextual Info: Inside Vantis’ EE CMOS PLD Technology TECHNOLOGY DESCRIPTION The EE CMOS technology used by Vantis in programmable logic is a single-poly, double- or triple-metal process. It has been optimized for high-speed programmable logic devices, which do not have the same density constraints of memory devices. The basic characteristics of the EE

rca sot23-5

Abstract: mark EA SOT23-5 G38-87 MARK RCA SOT23-5 thermal resistance standards AN792 TC1047 TC1186 TC1410N MCP3208
Contextual Info: M AN792 A Method to Determine How Much Power a SOT23 Can Dissipate in an Application Author: Terry Cleveland Microchip Technology Inc. INTRODUCTION With the introduction of smaller surface mount SMT packages, it is becoming increasingly important to know their maximum power handling capability in specific applications. The power dissipation capability is