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    TUNNEL JUNCTION DIODE Search Results

    TUNNEL JUNCTION DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CEZ6V2
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC Datasheet
    CUZ6V8
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, USC Datasheet
    CUZ24V
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Datasheet
    CUZ20V
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 20 V, USC Datasheet
    CEZ5V6
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, ESC Datasheet

    TUNNEL JUNCTION DIODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    back Tunnel diode

    Abstract: metal detectors circuit "back diode" point contact diode tunnel diode application
    Contextual Info: D fU M iu 'H C General Infotmation RF detection is achieved through utilization of the nonlinear, current-voltage characteristics of a semiconducting junction. Two fundamental detector diode types are used; silicon-based, Schottky barrier and germanium-based, tunnel or back diodes.


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    back Tunnel diode

    Abstract: Tunnel Diode tunnel diode application
    Contextual Info: Detector Overview General Inform ation RF detection is achieved through utilization o f th e nonlinear, current-voltage characteristics o f a semiconducting junction. Two fundamental d ete cto r diode types are used; silicon-based, Schottky barrie r and germanium-based, tunnel o r back diodes.


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    BD400

    Abstract: TD-429 1N3712 in3712 TD-427 TD-423 TD-437 TD-408 TD-401 TD-422
    Contextual Info: TUNNEL DIODES MICROWAVE Cj :> Vp Vv Type’ Peak Current Typ. mA Peak Vo Itaiie Typ (mV) Valley Voltage Typ. (mV) V^ Forward Peak Voltage Typ. (mV) (Ip/lv) Peak to Valley Ratio Typ. —R Negative R e sista n ce Rs S e rie s R esista n ce Max. Junction C ap acitan ce


    OCR Scan     		TD-401 TD-402 TD-403 O-404 TD-405 TD-406 TD-407 TD-408 TD-409 TD-411 BD400 TD-429 1N3712 in3712 TD-427 TD-423 TD-437 TD-422 PDF

    tunnel junction diode

    Abstract: tunnel diode high frequency metal detectors circuit "tunnel diode" chip assembly Detectors - Diode ml7700 TUNNEL DIODE diode tunnel
    Contextual Info: DETECTORS ML 7700-0000 Series DETECTORS 0.1 TO 18.0 GHz FEATURES ♦ Schottky & Tunnel Diode ♦ Limiter Detectors ♦ Broad Frequency Ranges ♦ High Sensitivities ♦ Coaxial & Drop-in DESCRIPTION The M /A -CO M Ltd detector range uses both silicon based Schottky barrier diodes and germ anium based tunnel diodes.


    OCR Scan     		sufficient800 tunnel junction diode tunnel diode high frequency metal detectors circuit "tunnel diode" chip assembly Detectors - Diode ml7700 TUNNEL DIODE diode tunnel PDF

    back Tunnel diode

    Abstract: mbd1057 DATASHEET TUNNEL DIODE MBD2057-C18 MBD3057 "tunnel diode" chip assembly Tunnel diode MBD1057-E28 tunnel diode application tunnel diodes
    Contextual Info: Planar Back Tunnel Diodes MBD Series Description Features The MDB series of back (tunnel) diodes are fabricated on germanium substrates using passivated, planar construction and gold metallization for reliable operation up to +110 °C. Unlike the standard tunnel diode IP is minimized


    Original     		MIL-PRF-19500 MIL-PRF-35834 back Tunnel diode mbd1057 DATASHEET TUNNEL DIODE MBD2057-C18 MBD3057 "tunnel diode" chip assembly Tunnel diode MBD1057-E28 tunnel diode application tunnel diodes PDF

    back Tunnel diode

    Abstract: "back diode" Germanium power DIODE tunnel MBD back diode
    Contextual Info: METELICS 11E CORP D I b OS 1 35 2 0 0Ü Q 13 0 3 IRLANAR BACK TUNNEL DIODES i lo w freq u en cy Detector Series (To 2 GHz) FEATURES • • • • • Rugged Germanium Planar Construction Excellent Temperature Stability No DC Bias Required Wide Video Bandwidth


    OCR Scan     		MIL-STD-19500 -65to+ 17dBmCW MBD-1050-C19 MBD-1050-A20 MBD-1050-T80 MBD-1050-T54 MBD-1050-H20 MBD-1050-E26 MBD-205s back Tunnel diode "back diode" Germanium power DIODE tunnel MBD back diode PDF

    backward diode

    Abstract: tunnel diode General Electric "backward diode"
    Contextual Info: P j p i GE C P L E S S E Y CT3508-1.2 MIXER & DETECTOR DIODES - INTRODUCTION M ETAL S E M IC O N D U C TO R SC H O TTK Y BA RRIER DIO DES INTRODUCTION A mixer is a sensitive receiver circuit which makes use of the nonlinear properties of a mixer diode to produce a


    OCR Scan     		CT3508-1 backward diode tunnel diode General Electric "backward diode" PDF

    MBD3057-C18

    Abstract: MBD2057-C18 DIODE e26 back Tunnel diode MBD1057
    Contextual Info: JMAR BACK TUNNEL DIODES m «|h Frequency Detector Series (To 18 GHz) U L = FEATURES • • • • • Rugged Germanium Planar Construction Excellent Temperature Stability No DC Bias Required Wide Video Bandwidth MIL-STD-19500 & 883 Capability M AXIM UM RATINGS


    OCR Scan     		MIL-STD-19500 MBD-1057-C18 MBD-1057-T80 MBD-1057-T54 MBD-1057-H20 MBD-1057-E26 MBD-2057-C18 MBD-2057-T80 MBD-2057-T54 MBD-2057-H20 MBD3057-C18 MBD2057-C18 DIODE e26 back Tunnel diode MBD1057 PDF

    MBD3057-C18

    Abstract: MBD5057-C18 back Tunnel diode MBD-3057-C18 MIL-STD-195 MBD5057 MBD2057-C18 MBD-1057-C18 MBD1057
    Contextual Info: PLANAR BACK TUNNEL DIODES m T ^ High Frequency D e te c to r Series (To 18 GHz) IB = oti^ rationS FEATURES • Rugged Germanium Planar Construction • Excellent Temperature Stability • No DC Bias Required • Wide Video Bandwidth • MIL-STD-195 00 & 883 Capability


    OCR Scan     		MIL-STD-195 MBD-1057-C18 MBD-1057-T80 MBD-1057-T54 MBD-1057-H20 MBD-1057-E26 MBD-2057-C18 MBD-2057-T80 MBD-2057-T54temperature, MBD3057-C18 MBD5057-C18 back Tunnel diode MBD-3057-C18 MBD5057 MBD2057-C18 MBD1057 PDF

    MBD3057-C18

    Abstract: back Tunnel diode
    Contextual Info: PLANAR BACK TUNNEL DIODES IM ” High Frequency D e te cto r Series (To 18 GHz) [ P — o f I" cc?r to iw i ? n * FEATURES • • • • • R u g g e d G e rm a n iu m P la n a r C o n s tru c tio n E x c e lle n t T e m p e ra tu re S ta b ility N o D C Bias R e q u ire d


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    MBD3057-C18

    Abstract: MBD2057-C18 MBD-1057-C18 mbd1057-c18 MBD-2057-C18 back Tunnel diode mbd 1057 MBD-3057-C18 MBD-3057-H20 "back diode"
    Contextual Info: ISPMAR BACK TUNNEL DIODES Iflgl i Frequency Detector Series (To 18 GHz) metelics ID CORPORATION FEATURES • • • • • R u g g e d G e rm a n iu m P lanar Construction Excellent T e m p e ra tu re Stability N o D C Bias R eq uired W id e V id e o B andw idth


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    anemometer

    Abstract: distance measurement using camera based ir sensor high accuracy tunnel sensor hot wire anemometer ITS-90 Q206 U100 tunnel diode application TUNNEL DIODE
    Contextual Info: Application Note 29 July 2009 PDF Name: thermal_characterization_process.pdf Thermal Characterization Process For Open-Frame Board Mounted Power Modules ƒ Contents ƒ ƒ ƒ ƒ ƒ ƒ ƒ Characteristics of Open-Frame Modules Preparation for Thermal Testing


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    DPGAS3S09

    Abstract: DPGAS1S09 laser diode 905nm optoelectronics perkinelmer DTS0305 1500-nm DPGAC1S
    Contextual Info: P R E L I M I N A R Y SENSOR SOLUTIONS 905nm Epitaxial Double Cavity Multi-Quantum Well InGaAs Pulsed Laser Diode DPGA Series Overview This EPI-cavity structure possesses the same 25˚ beam divergence in the perpendicular direction as the PGA series product line, as well as


    Original     		905nm DTS0305 DPGAS3S09 DPGAS1S09 laser diode 905nm optoelectronics perkinelmer DTS0305 1500-nm DPGAC1S PDF

    H31D

    Abstract: MP4T243 MP42001 MP4T56800 MP4T6310 MP4T6325 MP4T6365 MP4T645 MP4T6825 MP4T856
    Contextual Info: Microwave Table of Contents DIODES Mircowave Schottky Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Zero bias Schottky Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3


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    tunnel diodes

    Abstract: germanium diode equivalent tunnel diode germanium TUNNEL DIODE germanium diode tunnel junction diode AEY16 AEY13 AEY15 germanium diode junction capacitance
    Contextual Info: GERMANIUM T U N N EL DIODES AEYI3 AEYI5 AEYI6 TEN TA TIV E DATA Germanium tunnel diodes for use as low noise microwave am plifiers in S-band. QUICK REFERENCE DATA S-band f Operating frequency AEY13 AEY15 f min. r N s R esisitive cut-off frequency 6.0 8.0 Noise m easure


    OCR Scan     		AEY13 AEY15 AEY16 IB88331 AEY13-Page tunnel diodes germanium diode equivalent tunnel diode germanium TUNNEL DIODE germanium diode tunnel junction diode AEY16 germanium diode junction capacitance PDF

    back Tunnel diode

    Abstract: SCR WITH I-V CHARACTERISTICS tunnel diode
    Contextual Info: GENERAL INFORMATION 1 Inside Vantis’ EE CMOS PLD Technology TECHNOLOGY DESCRIPTION The EE CMOS technology used by Vantis in programmable logic is a single-poly, double- or triple-metal n-well process. It has been optimized for high-speed programmable logic devices,


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    PHOTOVOLTAIC CELL

    Abstract: triple-junction "solar cell" solar cell Emcore solar cell Concentrated Photovoltaic solar power "PHOTOVOLTAIC CELL" concentrate photovoltaic Concentrated "solar cell" Photovoltaic 1604a
    Contextual Info: CTJ Photovoltaic Cell Triple-Junction Solar Cell for Terrestrial Applications TERRESTRIAL PHOTOVOLTAICS 39% Efficiency under Concentrated Illumination Features & Characteristics Standard CTJ Cell Dimensions External Dimensions 10.68 x 10.075 mm Designed Aperture Area


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    MSPD2018

    Abstract: m21 sot23 transistor MSPD1012-H50 MSPD1000-E50/E50SM mpn7620-et47 MSPD1012-E50 mpn7610 mbd1057 MMD0840 MPN7345
    Contextual Info: Microwave Diodes Schottky Varactor PIN Step Recovery Planar Tunnel MOS / MIS Capacitors Short Form Catalog 2006 About Aeroflex / Metelics The Experience and Resources to Deliver the Technological Edge In many electronics applications, there is simply no margin for


    Original     		A17084 MSPD2018 m21 sot23 transistor MSPD1012-H50 MSPD1000-E50/E50SM mpn7620-et47 MSPD1012-E50 mpn7610 mbd1057 MMD0840 MPN7345 PDF

    anemometer

    Abstract: how does anemometer work hot wire anemometer AP4801 5TC-TTK-36-36 AP4803 ap4805 heat pipes intel universe errata thermocouple passive sensor
    Contextual Info: AP-480 APPLICATION NOTE Pentium PROCESSOR THERMAL DESIGN GUIDELINES REV 2 0 November 1995 Order Number 241575-003 Information in this document is provided in connection with Intel products Intel assumes no liability whatsoever including infringement of any patent or copyright for sale and use of Intel products except as provided in


    Original     		AP-480 anemometer how does anemometer work hot wire anemometer AP4801 5TC-TTK-36-36 AP4803 ap4805 heat pipes intel universe errata thermocouple passive sensor PDF

    Emcore solar cell

    Abstract: GaAs tunnel diode multi-junction "solar cell" NIEL proton tunnel diode tunnel diode GaAs GAAS multi-junction solar cell" NIEL for solar cell inp
    Contextual Info: PROTON AND ELECTRON RADIATION ANALYSIS OF GaInP2/GaAs SOLAR CELLS P. R. Sharps, C. H. Thang, P. A. Martin, and H. Q. Hou EMCORE Photovoltaics 10420 Research Road SE Albuquerque, NM 87112 ABSTRACT Electron and proton radiation damage analysis of solar cells is extremely important for predicting the response of


    Original     		OR-2000 Emcore solar cell GaAs tunnel diode multi-junction "solar cell" NIEL proton tunnel diode tunnel diode GaAs GAAS multi-junction solar cell" NIEL for solar cell inp PDF

    tunnel diode GaAs

    Abstract: jesd 00E-12 MMA703 MMA701 MMA705 p-hemt GaAs tunnel diode JESD22*108 MMA704
    Contextual Info: InGaP HBT Amplifiers Darlington Gain Blocks Medium Power Amplifiers Short Form Catalog Winter 2004 – 2005 About Aeroflex / Metelics Quality & Performance Designed for You Aeroflex / Metelics, a division of Aeroflex’s Microelectronic Solutions group, is a leading supplier of InGaP HBT


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    spice model Tunnel diode

    Abstract: dpsN TUNNEL DIODE spice model
    Contextual Info: 0.6 µm Process XT06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Trench Isolated SOI CMOS Technology Description The XT06 Series completes X-FAB's 0.6 Micron Modular Mixed Signal Technology. XT06 uses dielectric isolation on SOI wafers. This allows unrestricted 60 V high and low side operation


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    JESD22-A114E HBM

    Contextual Info: Product Brief LUXEON R Industry Leading Application Performance and Design Flexibility LUXEON R brings Illumination Grade LED light sources to the lighting market. It has never been simpler to design LED solutions and bring them to market. With hot testing,


    Original     		JESD22-A114-E PB101 JESD22-A114E HBM PDF

    back Tunnel diode

    Contextual Info: HPQ-8.3/22-D48 Series www.murata-ps.com Isolated 22-Amp Quarter Brick DC-DC Converters PRODUCT OVERVIEW Typical unit FEATURES „ 8.3 Volts DC fixed output up to 22 Amps „ Industry standard quarter brick 2.3" x 1.45" x 0.4" open frame package „ Wide range 36 to 75 Vdc input voltages with


    Original     		3/22-D48 22-Amp 3-22-D48 back Tunnel diode PDF