TUNNEL DIODES Search Results

tunnel diode

Abstract: 1N3718 Diode tunnel catalog "tunnel diode"
Contextual Info: 1N3718 General Purpose Tunnel Diode 39.00 Diodes Tunnel Diodes General Purpose A. Page 1 of 1 Enter Your Part # Home Part Number: 1N3718 Online Store 1N3718 Diodes General Purpose Tunnel Diode Transistors Enter code INTER3 at checkout.* Integrated Circuits

1N3712

Abstract: Tunnel Diode tunnel diodes
Contextual Info: 1N3712 General Purpose Tunnel Diode 59.00 Diodes Tunnel Diodes General Purpose A. Page 1 of 1 Enter Your Part # Home Part Number: 1N3712 Online Store 1N3712 Diodes General Purpose Tunnel Diode Transistors Enter code INTER3 at checkout.* Integrated Circuits

Tunnel diode

Abstract: 1N3713 tunnel diode 1N3713 Diode tunnel catalog 8598
Contextual Info: 1N3713 General Purpose Tunnel Diode 85.98 Diodes Tunnel Diodes General Purpose A. Page 1 of 1 Enter Your Part # Home Part Number: 1N3713 Online Store 1N3713 Diodes General Purpose Tunnel Diode Transistors Enter code INTER3 at checkout.* Integrated Circuits

TUNNEL DIODE

Abstract: 1N3714 germanium TUNNEL DIODE tunnel diode specifications
Contextual Info: 1N3714 General Purpose Tunnel Diode 62.39 Diodes Tunnel Diodes General Purpose A. Page 1 of 1 Enter Your Part # Home Part Number: 1N3714 Online Store 1N3714 Diodes General Purpose Tunnel Diode Transistors Enter code INTER3 at checkout.* Integrated Circuits

back Tunnel diode

Abstract: mbd1057 DATASHEET TUNNEL DIODE MBD2057-C18 MBD3057 "tunnel diode" chip assembly Tunnel diode MBD1057-E28 tunnel diode application tunnel diodes
Contextual Info: Planar Back Tunnel Diodes MBD Series Description Features The MDB series of back (tunnel) diodes are fabricated on germanium substrates using passivated, planar construction and gold metallization for reliable operation up to +110 °C. Unlike the standard tunnel diode IP is minimized

MBD5057

Contextual Info: Planar Back Tunnel Diodes MBD Series Description Features The MDB series of back (tunnel) diodes are fabricated on germanium substrates using passivated, planar construction and gold metallization for reliable operation up to +110 °C. Unlike the standard tunnel diode IP is minimized

"back diode"

Abstract: back Tunnel diode back diode tunnel diode specifications tunnel diodes Tunnel Diode
Contextual Info: ASTD1020 PLANAR TUNNEL BACK DIODE DESCRIPTION: The ASTD1020 is a Tunnel Diodes Optimized for Operation as Back Diode Detector in Applications up to 18 GHz. PACKAGE STYLE 51 FEATURES INCLUDE: • Excellent Temperature Stability • Fast Rise / Fall Times

DATASHEET TUNNEL DIODE

Abstract: "back diode" DIODE in 5060 ASTD-1020 PIN DIODE tunnel diode specifications diode 1020 package ASTD 2030 tunnel diode Tunnel diode ASTD-1020 ASTD-1020 detector
Contextual Info: ASTD SERIES PLANAR TUNNEL BACK DIODE DESCRIPTION: The ASTD Series of Tunnel Diodes are Optimized for Operation as Back Diode Detectors in Applications up to 18 GHz. PACKAGE STYLE 51 FEATURES INCLUDE: • Excellent Temperature Stability • Fast Rise / Fall Times

back Tunnel diode

Abstract: "back diode" tunnel diodes tunnel diode specifications
Contextual Info: ASTD1020-00 PLANAR TUNNEL BACK DIODE DESCRIPTION: PACKAGE STYLE DIE FORM The ASTD1020-00 is a Tunnel Diodes Optimized for Operation as Back Diode Detector in Applications up to 18 GHz. FEATURES INCLUDE: • Excellent Temperature Stability • Fast Rise / Fall Times

diode e29

Abstract: Tunnel diode TU 21 V Q62701 tu 20 c tu 4 320 tunnel diodes
Contextual Info: TU 301,302,305/5,305/10,310/5,310/10,320/5,320/10 P-Germaniurri tunnel diodes Tunnel diodes of the series 301, 302, 305 and 310 are specially suitable for switching and triggering applications. They are built into coaxial ceramic microwave cases with band leads.

1N3716

Abstract: diode germanium tu 38 f 1N3717 1N3714 1N3712 IN3712 diode germanium tu 38 e 1n3719 1N3715 1N3713
Contextual Info: Germanium Power Devices Corp. 1N3712-20 1H3713-21 4 Tunnel Diodes Specifications IN3712 through 1N3720 and 1N3713 through 1N3721 are Germanium Tunnel Diodes offering peak currents of 1.0, 2.2, 4.7,10, and 22 ma. These devices, which make use of the quantum mechanical tunneling phenom­

Tunnel diode

Abstract: DIODE N20 tunnel diodes
Contextual Info: TU 410/5, 410/10 P-Germanium tunnel diodes Tunnel diodes of the series 410 are particularly designed for use as high-speed switching diodes for counting and triggering applications up into the GHz range. Built into coaxial ceramic microwave cases these diodes are available in 2 groups

tunnel junction diode

Abstract: tunnel diode high frequency metal detectors circuit "tunnel diode" chip assembly Detectors - Diode ml7700 TUNNEL DIODE diode tunnel
Contextual Info: DETECTORS ML 7700-0000 Series DETECTORS 0.1 TO 18.0 GHz FEATURES ♦ Schottky & Tunnel Diode ♦ Limiter Detectors ♦ Broad Frequency Ranges ♦ High Sensitivities ♦ Coaxial & Drop-in DESCRIPTION The M /A -CO M Ltd detector range uses both silicon based Schottky barrier diodes and germ anium based tunnel diodes.

tunnel diode

Abstract: AEY30C tunnel diodes AEY30D TUNNEL AEY30
Contextual Info: AEY 30 A, AEY 30 B, AEY 30 C, AEY30D P-Germanium tunnel diodes Tunnel diodes AEY 30 are specially designed fo r use as m icro -w a ve amplifiers. B uilt into coaxial ceramic m icrow ave cases the diodes are sorted according to capacitance and identified by the letters A , B, C or D. Each diode is supplied in a

MP1301

Abstract: MP1104 MP1305 MP1451 mp-130 e180 MP1101 MP1452 MP1454 MP1300
Contextual Info: Microwave Tunnel Diodes ENVIRONMENTAL RATINGS Maximum Operating Temperature.-65 °C to +125°C Storage Temperature.-65 °C to +150°C Storage Temperature S1 Case.-65 °C to +125°C Electrical Specifications @ 25°C PART NUMBER

MSPD2018

Abstract: m21 sot23 transistor MSPD1012-H50 MSPD1000-E50/E50SM mpn7620-et47 MSPD1012-E50 mpn7610 mbd1057 MMD0840 MPN7345
Contextual Info: Microwave Diodes Schottky Varactor PIN Step Recovery Planar Tunnel MOS / MIS Capacitors Short Form Catalog 2006 About Aeroflex / Metelics The Experience and Resources to Deliver the Technological Edge In many electronics applications, there is simply no margin for

MP1601

Abstract: MP1303 MP1301
Contextual Info: M-Pulse Microwave Inc. 576 Charcot Ave. San Jose, Ca, 95131 Tel: 408 432-1480 Fax:(408) 432-1480 www.mpulsemw.com Tunnel Diodes Part Number MP1101 MP1100 MP1102 MP1103 MP1104 MP1105 MP1201 MP1200 MP1202 MP1203 MP1204 MP1205 MP1301 MP1300 MP1302 MP1303 MP1304

Contextual Info: 40574 Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 50m Peak Curr. Tol.2.5m Total Cap. (F)12p Ip/Iv Min8.0 Vp80m Vv355m Fwd Volt @Ipeak Resist. Cutoff Freq Series Induct. (H) R(series) (Ohms)1.5 Neg Resist. Semiconductor MaterialGermanium

Contextual Info: 1N3857 Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 5.0m Peak Curr. Tol.25m Total Cap. (F)8.0p Ip/Iv Min8.0 Vp70m Vv330m Fwd Volt @Ipeak525m Resist. Cutoff Freq Series Induct. (H) R(series) (Ohms)3.0 Neg Resist. Semiconductor MaterialGermanium

Contextual Info: 1N2929 Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 1.0m Peak Curr. Tol.10m Total Cap. (F)150p Ip/Iv Min2.5 Vp80m Vv500m Fwd Volt @Ipeak700m Resist. Cutoff Freq Series Induct. (H) R(series) (Ohms)2.0 Neg Resist. Semiconductor MaterialSilicon

Contextual Info: 1N3858 Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 10m Peak Curr. Tol.50m Total Cap. (F)8.0p Ip/Iv Min8.0 Vp75m Vv350m Fwd Volt @Ipeak545m Resist. Cutoff Freq Series Induct. (H) R(series) (Ohms)2.5 Neg Resist. Semiconductor MaterialGermanium

Contextual Info: 10400BD Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 500u Peak Curr. Tol. Total Cap. (F).70p Ip/Iv Min Vp560 Vv Fwd Volt @Ipeak100m Resist. Cutoff Freq Series Induct. (H) R(series) (Ohms)6.0 Neg Resist. Semiconductor MaterialGermanium

Contextual Info: 10450BD Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 500u Peak Curr. Tol. Total Cap. (F)1.0p Ip/Iv Min Vp560 Vv Fwd Volt @Ipeak80m Resist. Cutoff Freq Series Induct. (H) R(series) (Ohms)5.0 Neg Resist. Semiconductor MaterialGermanium

Contextual Info: 1N3854 Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 20m Peak Curr. Tol.1.0m Total Cap. (F)20p Ip/Iv Min8.0 Vp85m Vv365m Fwd Volt @Ipeak565m Resist. Cutoff Freq Series Induct. (H) R(series) (Ohms)2.0 Neg Resist. Semiconductor MaterialGermanium