TTL 22PIN Search Results

Contextual Info: P4C188/P4C188L ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS SCRAMS FEATURES Single 5V±10% Power Supply Data Retention with 2.0V Supply (P4C188L Military) Three-State Outputs TTL/CMOS Compatible Outputs Fully TTL Compatible Inputs Produced with PACE Technology

24-Pin Plastic DIP

Abstract: 64 CERAMIC LEADLESS CHIP CARRIER LCC diode Lz 66 transistor smd code wz P4C188 P4C188L
Contextual Info: P4C188/188L P4C188/P4C188L ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS FEATURES Single 5V±10% Power Supply Data Retention with 2.0V Supply P4C188L Military Three-State Outputs TTL/CMOS Compatible Outputs Fully TTL Compatible Inputs Standard Pinout (JEDEC Approved)

P4C188

Abstract: P4C188L
Contextual Info: P4C188/P4C188L ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS SCRAMS FEATURES Single 5V±10% Power Supply Data Retention with 2.0V Supply Three-State Outputs TTL/CMOS Compatible Outputs Fully TTL Compatible Inputs Produced with PACE Technology Standard Pinout (JEDEC Approved)

Contextual Info: P4C188/P4C188L ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS SCRAMS FEATURES Single 5V±10% Power Supply Data Retention with 2.0V Supply Three-State Outputs TTL/CMOS Compatible Outputs Fully TTL Compatible Inputs Produced with PACE Technology Standard Pinout (JEDEC Approved)

P4C188

Abstract: P4C188L
Contextual Info: P4C188/P4C188L ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS FEATURES Single 5V±10% Power Supply Data Retention with 2.0V Supply P4C188L Military Three-State Outputs TTL/CMOS Compatible Outputs Fully TTL Compatible Inputs Standard Pinout (JEDEC Approved) – 22-Pin 300 mil DIP

Contextual Info: P4C188/P4C188L ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS FEATURES Single 5V±10% Power Supply Data Retention with 2.0V Supply P4C188L Military Three-State Outputs TTL/CMOS Compatible Outputs Fully TTL Compatible Inputs Standard Pinout (JEDEC Approved) – 22-Pin 300 mil DIP

Contextual Info: FU JITSU MICROELECTRONICS HIGH SPEED SCHOTTKY TTL 8192-BIT PROM MB7130E MB7130H DESCRIPTION The Fujitsu MB7130 is a high speed Schottky TTL electrically field programmable read only memory organized as 1024 words by 8-bits. With three-state outputs on the MB7130, memory expan­

Contextual Info: P4C188/P4C188L ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS FEATURES Single 5V±10% Power Supply Data Retention with 2.0V Supply P4C188L Military Three-State Outputs TTL/CMOS Compatible Outputs Fully TTL Compatible Inputs Standard Pinout (JEDEC Approved) – 22-Pin 300 mil DIP

DM77

Abstract: DM87SR27N DM87SR27BJ DM87SR27BN J22A N22A
Contextual Info: DM77SR27/DM87SR27 VWA National éH à Sem iconductor DM77/87SR27 512x8 4k-Bit Registered TTL PROM General Description The DM77/87SR27 is an electrically programmable Schottky TTL read-only memory with D-type, master-slave registers on-chip. This device is organized as 512 words by

am9101

Abstract: 91l01 am91l01 9101C Am9101/91L01/2101
Contextual Info: Am9101 Family Am9101 Family 2 5 6 x 4 Static RAM DISTINCTIVE CHARACTERISTICS Low operating 125 mW typ.; 100 mW typ.; Logic voltage power 290 mW maximum — standardpower 175 mW maximum — low power levels identical to TTL • • • • High output drive — two full TTL loads

pc2101

Abstract: 91L01
Contextual Info: Am9101 Family Am9101 Family 2 5 6 x 4 Static RAM DISTINCTIVE CHARACTERISTICS Low operating power 125 mW typ.; 290 mW maximum — standardpower 100 mW typ.; 175 mW maximum — low power Logic voltage levels identical to TTL • • • • High output drive — two full TTL loads

saa6000

Abstract: 65536 page mode dynamic ITT4164 ITT5101S
Contextual Info: MOS MEMORIES ITT4164 65536-Bit Dynamic Random Access Memory Industry-Standard 16-Pin DIP Features 150 ns access time (ITT4164-15) 200 ns access time (ITT4164-20) All inputs including clocks are TTL compatible Standard power supply + 5 V, ±10% Three state TTL compatible output, Data out is not latched

pnp 8 transistor array ttl

Abstract: MB7130E MB7130H dis40
Contextual Info: MB7130E MB7130H FUJITSU M IC R O E L E C T R O N IC S HIGH SPEED SCHOTTKY TTL 8192-BIT PROM DESCRIPTION The Fujitsu M B7130 is a high speed Schottky TTL electrically field programmable read only memory organized as 1024 words by 8-bits. W ith three-state outputs

mb766

Abstract: B766 "Level Translator"
Contextual Info: 2 1993 November 1989 Edition 1.0 FUJITSU PRODUCT PROFILE MB 766 Octal ECL to TTL Level Translator DESCRIPTION The Fujitsu M B766 is a high-speed ECL-to-TTL level translator with eight circuits. The M B766 E C L input interface is compatible with 10KH ECL. The M B766 is housed in a

ay-5-1012

Abstract: ali m 3329 PROCESSOR ALI 3329 ali 3329 b ali 3329 SN74188 sn74s188 str 52100 SN7452 replacement of bel 187 transistor
Contextual Info: GENERAL INFORMATION lie of Contents • Alphanumeric Index • Selection Guides • Glossary INTERCHANGEABiliTY GUIDE MOS MEMORIES TTL MEMORIES ECl MEMORIES MICROPROCESSOR SUMMARY 38510/MACH IV PROCUREMENT SPECIFICATION JAN Mll-M-38510 INTEGRATED CIRCUITS

AM93l422

Abstract: TW000040 st gex 21 diode
Contextual Info: Am93L412/93L422 256 x 4-Bit Low-Power TTL Bipolar IMOX RAM DISTINCTIVE CHARACTERISTICS • • • High-speed Internal ECL circuitry for optimum speed/power perfor­ mance over voltage and temperature Output preconditioned during write to eliminate write

Bubble Memory

Abstract: TA 7230 P intel 8085 Intel BUBBLE 7230 intel 7110 intel 8088 memory memory bubble INTEL 7230 S6590
Contextual Info: 7230 CURRENT PULSE GENERATOR FOR BUBBLE MEMORIES TTL Compatible Inputs Provides all Pulses for IM’s Bubble Memories — Replicate, Swap, Generate, Boot Replicate and Bootswap Current Sink Outputs Designed to Directly Drive Bubble Memory • Direct Interface to Bubble Memory

8X350

Abstract: 8X300
Contextual Info: Philips Components-SigneHcs Document No. 853-0147 ECN No. 86487 Date of Issue November 11, 1986 Status Product Specification 8X350 2048-bit TTL bipolar RAM Memory Products DESCRIPTION The 8X350 bipolar RAM is designed principally as a working storage element

8x305

Abstract: BIPOLAR MEMORY
Contextual Info: Signetics 8X350-40 2K-Bit TTL Bipolar RAM 256 x 8 Military Bipolar Memory Products Product Specification PIN CONFIGURATION DESCRIPTION FEATURES The 8X350-40 bipolar RAM is designed principally as a working storage element in an 8X305 based system. Internal circuitry

AMD 2903

Abstract: am2903 IR 2411 AM27S20 am27s27dc AM27S26DC AM27S26DM AM27S27XC generic prom programming st 2903
Contextual Info: Am27S26 • Am27S27 4096-B it G eneric Series Bipolar PROM DISTINCTIVE CHARACTERISTICS FUNCTIONAL DESCRIPTION • The Am 27S26 and Am27S27 are electrically programmable Schottky TTL read only memories incorporating true D-type, master-slave data registers on chip. These devices feature the

AM93422

Abstract: 93422 ram AM93422ADMC Am93412A PD022
Contextual Info: A m 93412/93422 Am93412/93422 256 X 4-Bit TTL Bipolar IMOX RAM DISTINCTIVE CHARACTERISTICS • • • High-speed Internal ECL circuitry for optimum speed/power perfor­ mance over voltage and temperature Output preconditioned during write to eliminate write

93422 amd

Abstract: AM93422 AM93422ADMC 93422 ram
Contextual Info: Am93412/93422 Am93412/93422 256 x 4-Bit TTL Bipolar IMOX RAM DISTINCTIVE CHARACTERISTICS • • • • High-speed Internal ECL circuitry for optimum speed/power perfor­ mance over voltage and temperature Output preconditioned during write to eliminate write

23E D

Abstract: km6465
Contextual Info: SAMSUNG SEMICONDUCTOR INC 23E D 7^4145 DGOaab4 ñ • KM6465P/KM6465LP CMOS SRAM 16K x 4 Bit Static RAM FEATURE GENERAL DESCRIPTION • Fast Access Time 25,35,45ns max. • Low Power Dissipation Standby (TTL) : 2 mA (max.) (CMOS): 100 (iA (max.) Operating

4801h

Abstract: UCS4801 UCS-480IH UCS4401H UCS-4401 UCS-4801H ucs-4801 UCS4801H UCS-4401H MIL-STD-8
Contextual Info: UCS-4401H a nd UCS-4801H HERMETIC BiMOS LATCHED DRIVERS UCS-4401H a n d UCS-4801H HERMETIC BiMOS LATCHED DRIVERS MIL-STD-883 Compliant FEATURES High-Voltage, High-Current Outputs Output Transient Protection CMOS, PMOS, NMOS, TTL Compatible Internal Pull-Down Resistors