TT5 MARKING Search Results

Contextual Info: SIEMENS Silicon RF Switching Diode BA592 • For VHF band switching in TV/VTR tuners • Low forward resistance, small capacitance, small inductance Type Marking Ordering Code tape and reel BA 592 blue S Q62702-A950 Pin Configuration Package SOD-323 o- k j —— »

Contextual Info: SIEMENS Silicon Schottky Diode BAT 63 • Low barrier diode for mixer and detectors up to GHz frequencies Type BAT 63 Ordering Code tape and reel 1 Q62702-A1004 A1 Pin Configuration 2 3 4 C2 A2 C1 Marking Package 63 SOT-143 Maximum Ratings Parameter Symbol

JB TRANSISTOR SMD MARKING CODE

Abstract: Q62702-S217
Contextual Info: BSS 296 Infineon t« c h n o lo g t« s SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level •^ G S th 3 = 0.8.2.0V Pin 1 VPTO5540 Pin 2 G (/> Type k> ^ D S (o n ) Package Marking 0.8 A 0.8 fl TO-92 SS 296 BSS 296 100 V

Substrate alumina

Abstract: TT12
Contextual Info: TEPRO TYPE “TT” ELECTRO TECHNIK CURRENT SENSE, SURFACE MOUNT, CHIP RESISTORS FEATURES: Standard tolerances to ±0.5% International standard size Highly reliable multilayer electrode construction Compatible with both flow soldering and reflow soldering

Contextual Info: SILIC O N EPICAP DIODES MMBV409LT1* MV409* . . . designed fo r general frequency control and tuning applications; providing solid-state reliability in replacement of mechanical tuning methods. • High Q w ith Guaranteed M inim um Values at VHF Frequencies

Contextual Info: C O N T A C T AR RA N G EM EN T 'O cTO cm O JcticlO cticir iJclülülülO C T O cU cU clflcl 1 mmn n n s n u E rr^ r-Ji e me h h s h h e h 1][I]Ì]Ì]0000[I]00 l u m i n i l i ] h ih h h ì ] S liiiiiiiiB umili]0 0 B B M Si] NOTES: m A A 0 IS E] 10[01010 IS 10[0 IS

Contextual Info: TEPRO TYPE “TT” ELECTRO TECHNIK CURRENT SENSE, SURFACE MOUNT, CHIP RESISTORS FEATURES: Standard tolerances to ±0.5% International standard size Highly reliable multilayer electrode construction Compatible with both flow soldering and reflow soldering

Contextual Info: icKicon me, ALUMINUM ELECTROLYTIC CAPACITORS BT B High T em peratu re R ang e, For + 1 2 5 ° C Use L ong Life Anti-Solvent Feature • Highly dependable reliability withstanding load life of 5,000 hours at + 1 2 5 °C . • Suited for automobile electronics where heavy duty services are indispensable.

3H2 philips

Abstract: marking B5T BFG197W D054 DIN45004B TT5 marking
Contextual Info: Philips Semiconductors Product specification BFG197W BFG197W/X; BFG197W/XR NPN 7 GHz wideband transistor MARKING FEATURES • High power gain TYPE NUMBER • Low noise figure BFG197W V5 • Gold metallization ensures excellent reliability. BFG197W/X V8 BFG197W/XR

TT136

Abstract: R8X0 ccn5 deb1 256ms electric diagram acs 150
Contextual Info: [AK4160] AK4160 16-channel Capacitive Touch Sensor IC GENERAL DESCRIPTION The AK4160 is a low operating voltage and low power consumption 16-channel capacitive touch sensor. Maximum 8 channels out of the 16-channel can be configured to LED drive or GPIO. The AK4160 has a

Contextual Info: [AK4160] AK4160 16-channel Capacitive Touch Sensor IC GENERAL DESCRIPTION The AK4160 is a low operating voltage and low power consumption 16-channel capacitive touch sensor. Maximum 8 channels out of the 16-channel can be configured to LED drive or GPIO. The AK4160 has a

marking 82 sot343

Abstract: zo 103 ma BFG197W DIN45004B MS80 Ghz dB transistor
Contextual Info: Product specification Philips Semiconductors BFG197W BFG197W/X; BFG197W/XR NPN 7 GHz wideband transistor MARKING FEATURES • High power gain TYPE NUMBER • Low noise figure • Gold metallization ensures excellent reliability. BFG197W BFG197W/X BFG197W/XR

Contextual Info: TOSHIBA 2SK2398 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2398 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 1 5.9M A X. • • • • Low Drain-Source ON Resistance : Rd S (ON)= 22mQ (Typ.)

kp 72

Contextual Info: ,•— Infineon technologies Surface Mount Piezoresistive Silicon Absolute Pressure Sensor KP 202-R/RK KP 203-R/RK Preliminary Features • • • • • High sensitivity and linearity Fast response Very small dimensions Low cost Produced in qualified semiconductor

Contextual Info: Lj ME » P O M E R O • 72=^21 DODS^Ûl 1Tb I IPRX FG1000AV r POhlERFX INC Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France(43) 72.75.15 Asymmetric Gate-Turn-Off Thyristors

2SK852

Abstract: jb 5531 JE 33 26L55 T1IG
Contextual Info: NEC o ^ n y ^ Ju n ctio n Field Effect Transistor i & m t e w m m N-Channel Silicon Junction Field-Effect Transistor Audio Frequency Amplifier f t W f t High gm < ntzshSi f i j f t o ¡ S ita . V o gdo> r - M i -c r < + •/ 7 u > = 10 V, V<; s = 0 1.25 + 0.1

Contextual Info: W hnl H E W L E T T mL'HMP A C K A R D 0.5 - 4 GHz 3 V Low Current GaAs MMIC LNA Technical Data MGA-87563 Features • Ultra-M iniature Package • 1.6 dB Min. N oise Figure at 2.4 GHz • 12.5 dB Gain at 2.4 GHz • Single + 3 V or 5 V Supply, 4.5 mA Current

HS508

Abstract: S8Y1
Contextual Info: HARRIS SEMICOND SECTOR m U ^ bSE T> Bi M302271 0 0 ^ 1 7 3 12T H H A S HS-548RH HS~549RH HARRIS l S E M I C O N D U C T O R 19 9 3 Single 8 /D ifferential 4 Channel CMOS Analog M ultiplexers with Active Overvoltage Protection Pinouts Features • This Circuit is Processed in Accordance to MIL-STD-883

Instrumentation Amplifier IC 741

Abstract: marking v0p 5962-88630 QPL-38510 88630 OTAX OTAX OF 5962-8863002VX 5962-8863001VX 5962-E923
Contextual Info: < 5962-E923 D ISTR IB U TIO N STA TE M E N T A. I Approved lor public release; distribution is unlim ited. • ■ - This Material Copyrighted By Its Respective Manufacturer -,- 1. SCOPE 1.1 Scope. This drawing describes device requirements fo r c la s s B m icro circu its in accordance

Contextual Info: SONY LCX007CN 3.4cm 1.35-inch Black-and-White LCD Panel Description The LCX007CN is a 3.4cm diagonal active matrix TFT-LC D panel addressed by polycrystalline silicon super thin film transistors with built-in peripheral driving circuit. Use of three panels in combination

eahf

Contextual Info: FaStlSHfcitütlîUol'T i - / U ' > 7 ^ IC/M onolithic ICs a n W f ê H £ Î I i f i t Ê l - '3 l 'T / / In te g r a te d a n d r b fifr ftli, $>5ô t b , o 3 i : p nD l î i - t î 5 C ir c u it Q u a lit y A s s u r a n c e R e lia b ilit y Q u a lity F irs t— th e u n d e rly in g c o rp o ra te go a l o f R O H M

ad7820tq

Contextual Info: 1. DATE NOTICE OF REVISION NOR (YYMMDD) 96-01-11 THIS REVISION DESCRIBED BELOW HAS BEEN AUTHORIZED FOR THE DOCUMENT LISTED. data «stimate or any other aspect of this collection of information, includi Headwiartare Service«, Directorate for Information Operations and

54ACS14

Abstract: UT54ACS14UVAH 5962H9652401VXA 5962H9652401VXC qml-38535 54ACS 5962H965 UT54ACS14UQCH
Contextual Info: REVISIONS LTR DATE YR-MO-DA DESCRIPTION APPROVED REV SHEET REV SHEET REV S T A T U S OF SHEETS REV SHEET P M IC N /A STANDARD M IC R O C IR C U IT D R A W IN G THIS DRAW ING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTM ENT OF DEFENSE

WT-540

Abstract: 8605101EX 27S02 ltpz E1322 27LS03 27S03 8605106EX 8605104E 8605101
Contextual Info: REVISIONS LTR DATE YB-MO-OA DESCRIPTION A Update vendor's part number. Change to m ilit a r y drawing format. 1987 JULY 7 E d ito ria l changes throughout. B Made technical changes to table I . Added device types 07, 08, and 09 fo r vendor CAGE 34335. Changes to fig u re s 4 , 5 , and 6.