TT22 22 Search Results

KT88

Abstract: kt88 data TT21 TT22 marconi company marconi Marconi KT88
Contextual Info: BEAM TET R O D ES TT22 ISSUE 1 Beam tetrodes with oxide coated cathodes, the TT21 and TT22 are identical except for their heater ratings. They are designed for use as r.f. power amplifiers with full ratings at frequencies up to 30Mc/s and are also useful as audio output valves and pulse modulators.

vacuum tube amplifier

Abstract: TT22 22 TT21 TT-22 tube chronotrons vacuum tube "vacuum tube" TT15 vacuum tube applications TT22
Contextual Info: File C atalo g : Electron Tube Products T T - 8 * , TT-9, TT-13 O endi/r Types 1t t - i 5 , t t - 1 7 , t t - i 8 Section: G a s and Special Tubes ( TT-20, TT-21, TT-22 CHRONOTRONS DESCRIPTION These tubes a re d esig n ed for use in electronic control circuits to p ro vid e a time d e la y in a m anner sim ilar to an

Contextual Info: SiA441DJ Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) () ID (A) 0.047 at VGS = - 10 V - 12a 0.065 at VGS = - 4.5 V - 12a Qg (Typ.) 11 nC PowerPAK SC-70-6L-Single S 1 APPLICATIONS D • Portable and Consumer Devices

Contextual Info: SiA441DJ Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) () ID (A) 0.047 at VGS = - 10 V - 12a 0.065 at VGS = - 4.5 V - 12a Qg (Typ.) 11 nC PowerPAK SC-70-6L-Single S 1 APPLICATIONS D • Portable and Consumer Devices

Contextual Info: SiA441DJ Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) () ID (A) 0.047 at VGS = - 10 V - 12a 0.065 at VGS = - 4.5 V - 12a Qg (Typ.) 11 nC PowerPAK SC-70-6L-Single S 1 APPLICATIONS D • Portable and Consumer Devices

Pulse Transformers 13Z1001

Abstract: 13Z1023
Contextual Info: TYPE 13Z CONTROL TRANSFORMERS FEATURES • Meets design requirements of most sine wave inverter circuits. • High ET-Ratings. • High dielectric strength capability. • Fast rise time. • Low interwinding capacitance. • Materials meet flamability requirement of UL94vO.

SI4565ADY

Abstract: list of P channel power mosfet Si4565ADY-T1-E3
Contextual Info: Si4565ADY Vishay Siliconix New Product N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 40 - 40 rDS(on) (Ω) ID (A)a 0.039 at VGS = 10 V 6.6 0.050 at VGS = 4.5 V 5.8 Qg (Typ) RoHS 6.6 0.054 at VGS = - 10 V - 4.5 0.072 at VGS = - 4.5 V

list of P channel power mosfet

Abstract: Si4565ADY-T1-E3 Si4565ADY-T1-GE3
Contextual Info: Si4565ADY Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.039 at VGS = 10 V 6.6 0.050 at VGS = 4.5 V 5.8 0.054 at VGS = - 10 V - 4.5 0.072 at VGS = - 4.5 V - 3.9 VDS (V) N-Channel P-Channel 40 - 40 Qg (Typ.)

Contextual Info: New Product Si7454DDP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 a RDS(on) () Max. ID (A) 0.033 at VGS = 10 V 21 0.036 at VGS = 7.5 V 20 0.047 at VGS = 4.5 V 17.7 Qg (Typ.) 6.1 nC APPLICATIONS • • • • PowerPAK SO-8

SI4565ADY

Abstract: SI4565ADY-T1-E3
Contextual Info: Si4565ADY Vishay Siliconix New Product N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 40 - 40 rDS(on) (Ω) ID (A)a 0.039 at VGS = 10 V 6.6 0.050 at VGS = 4.5 V 5.8 Qg (Typ) RoHS 6.6 0.054 at VGS = - 10 V - 4.5 0.072 at VGS = - 4.5 V

Si4565ADY-T1-E3

Abstract: Si4565ADY-T1-GE3
Contextual Info: Si4565ADY Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.039 at VGS = 10 V 6.6 0.050 at VGS = 4.5 V 5.8 0.054 at VGS = - 10 V - 4.5 0.072 at VGS = - 4.5 V - 3.9 VDS (V) N-Channel P-Channel 40 - 40 Qg (Typ.)

marking code vishay SILICONIX

Abstract: rl diode 205
Contextual Info: SiA441DJ Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) () ID (A) 0.047 at VGS = - 10 V - 12a 0.065 at VGS = - 4.5 V - 12a Qg (Typ.) 11 nC PowerPAK SC-70-6L-Single S 1 APPLICATIONS D • Portable and Consumer Devices

74452

Abstract: 70941
Contextual Info: New Product Si4566DY Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 40 - 40 rDS(on) (Ω) ID (A)a 0.027 at VGS = 10 V 6.0 0.032 at VGS = 4.5 V 4.8 Qg (Typ) RoHS 9.6 0.054 at VGS = - 10 V - 4.5 0.072 at VGS = - 4.5 V

Contextual Info: SiA441DJ Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) () ID (A) 0.047 at VGS = - 10 V - 12a 0.065 at VGS = - 4.5 V - 12a Qg (Typ.) 11 nC PowerPAK SC-70-6L-Single S 1 APPLICATIONS D • Portable and Consumer Devices

UM22F

Abstract: UM-28 07H2 CT10H microtran DCM7 DCM19-PC DCM13-PC UM39-H
Contextual Info: "tamura MINIATURIZED AUDIO TRANSFORMERS Open Frame and Encapsulated Styles for PC Boards MICROTRAN ULTRA-MINIATURE-UM SERIES Frequency R esponse ±2dB 300 to 10,000 Hz M easured at level stated for 300 Hz. M in iatu rize d design otters a relatively high p o w e r level an A printed circuit packaging. Response measured at level

AP105-RP17-1

Contextual Info: TYPE RP17 PUSH-PULL LOCK CONNECTORS Scope f RP17 series connectors are designed for interfacing 8 mm I video equipment and office automation equipment with I miniature, lightweight, high durability 12 pin circular Vconnectors. RP17 series connectors are ideal for quick connection and

Contextual Info: Si4565ADY Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.039 at VGS = 10 V 6.6 0.050 at VGS = 4.5 V 5.8 0.054 at VGS = - 10 V - 4.5 0.072 at VGS = - 4.5 V - 3.9 VDS (V) N-Channel P-Channel 40 - 40 Qg (Typ.)

Contextual Info: Si4565ADY Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.039 at VGS = 10 V 6.6 0.050 at VGS = 4.5 V 5.8 0.054 at VGS = - 10 V - 4.5 0.072 at VGS = - 4.5 V - 3.9 VDS (V) N-Channel P-Channel 40 - 40 Qg (Typ.)

Si7454DDP

Contextual Info: New Product Si7454DDP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 a RDS(on) () Max. ID (A) 0.033 at VGS = 10 V 21 0.036 at VGS = 7.5 V 20 0.047 at VGS = 4.5 V 17.7 Qg (Typ.) 6.1 nC APPLICATIONS • • • • PowerPAK SO-8

SI4565AD

Contextual Info: Si4565ADY Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.039 at VGS = 10 V 6.6 0.050 at VGS = 4.5 V 5.8 0.054 at VGS = - 10 V - 4.5 0.072 at VGS = - 4.5 V - 3.9 VDS (V) N-Channel P-Channel 40 - 40 Qg (Typ.)

Contextual Info: New Product Si7454DDP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 a RDS(on) () Max. ID (A) 0.033 at VGS = 10 V 21 0.036 at VGS = 7.5 V 20 0.047 at VGS = 4.5 V 17.7 Qg (Typ.) 6.1 nC APPLICATIONS • • • • PowerPAK SO-8

Contextual Info: New Product Si7454DDP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 a RDS(on) () Max. ID (A) 0.033 at VGS = 10 V 21 0.036 at VGS = 7.5 V 20 0.047 at VGS = 4.5 V 17.7 Qg (Typ.) 6.1 nC APPLICATIONS • • • • PowerPAK SO-8

1N120BND

Abstract: TB334 HGT1S1N120BNDS HGT1S1N120BNDS9A HGTP1N120BND RHRD4120
Contextual Info: HGTP1N120BND, HGT1S1N120BNDS Data Sheet January 2000 5.3A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP1N120BND and the HGT1S1N120BNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT

HGT1S1N120BNDS

Abstract: HGT1S1N120BNDS9A HGTP1N120BND RHRD4120 TB334 1N120BND
Contextual Info: HGTP1N120BND, HGT1S1N120BNDS Data Sheet January 2000 5.3A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP1N120BND and the HGT1S1N120BNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT