TT B6 C 110N Search Results

Contextual Info: ADVANCE M in S Q M I MT4LC8M8EÎ/B& S MEG X 8 DRAM 8 MEG X 8 DRAM DRAM 3.3V FAST PAGE MODE FEATURES • Single +3.3V ±0.3V power supply • Industry-standard x8 pinout, timing, functions and packages • 13 row-addresses, 10 column-addresses El or 12 row-addresses, 11 column-addresses (B6)

32-PIN

Abstract: FPM DRAM
Contextual Info: OBSOLETE 8 MEG x 8 FPM DRAM MT4LC8M8E1, MT4LC8M8B6 DRAM For the latest data sheet, please refer to the Micron Web site: www.micron.com/products/datasheets/dramds.html FEATURES PIN ASSIGNMENT Top View • Single +3.3V ±0.3V power supply • Industry-standard x8 pinout, timing, functions,

32-PIN

Contextual Info: 8 MEG x 8 FPM DRAM MT4LC8M8E1, MT4LC8M8B6 DRAM For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT Top View • Single +3.3V ±0.3V power supply • Industry-standard x8 pinout, timing, functions,

32-PIN

Contextual Info: 8 MEG x 8 FPM DRAM MT4LC8M8E1, MT4LC8M8B6 DRAM For the latest data sheet, please refer to the Micron Web site: www.micron.com/products/datasheets/dramds.html FEATURES PIN ASSIGNMENT Top View • Single +3.3V ±0.3V power supply • Industry-standard x8 pinout, timing, functions,

Contextual Info: 8 MEG x 8 FPM DRAM MT4LC8M8E1, MT4LC8M8B6 DRAM For the latest data sheet, please refer to the Micron Web site: www.micronsemi.com/datasheets/datasheet.html FEATURES PIN ASSIGNMENT Top View • Single +3.3V ±0.3V power supply • Industry-standard x8 pinout, timing, functions,

32-PIN

Contextual Info: PRELIMINARY 8 MEG x 8 FPM DRAM TECHNOLOGY, INC. MT4LC8M8E1 MT4LC8M8B6 DRAM FEATURES PIN ASSIGNMENT Top View • Single +3.3V ±0.3V power supply • Industry-standard x8 pinout, timing, functions and packages • 13 row, 10 column addresses (E1) or 12 row, 11 column addresses (B6)

S42026

Abstract: S42026-A15-A1 S42026-A16-A3 TAB1042 cmos 4 bit counter MJ1471 PA 4013 G711 MJ1480 SL1480
Contextual Info: MJ1480/SL1480 Advance information is issued to advise Customers of new additions to the Plessey Semiconductors range which, nevertheless, still have 'pre-production' status. Details given may, therefore, change without notice although we would expect this performance data to

M5L8224

Abstract: intel 8224 lt 8224 M5L8224P
Contextual Info: MITSUBISHI LSIs M5L8224P CLOCK GENERATOR AND DRIVER FOR M 5L 8O8OA P, S CPU DESCRIPTION PIN CONFIGURATION TOP VIEW The M 5L8224P is a clo ck generator/driver fo r M 5 L 8 0 8 0 A P,S CPUs. I t is controlled by a crystal, selected by the user, to meet a variety o f system speed requirements. It is fa b ri­

74LS245 buffer ic

Abstract: KS0164 mpu 401 roland d5 multi timbral
Contextual Info: KS0165 MULTIMEDIA AUDIO O V E R V IE W The KS0165wavetable synthesizer with ettect processor chip represents the state-of-the-art in multimedia audio technology. The KS0165 combines a high-quality 32-voice wavetable synthesizer, a powerful 16-bit CPU, MPU-401 compatibility, effect processor & 16k delay RAM into a single chip. The

Contextual Info: m H A F R F R IS ACTS74MS S E M I C O N D U C T O R Radiation Hardened Dual D Flip Flop with Set and Reset D e c e m b e r 1992 Features Pinouts • 1.25 Micron Radiation Hardened SOS CMOS 14 PIN CERAMIC DUAL-IN-LINE MIL-STD-1835 DESIGNATOR CDIP2-T14, LEAD FINISH C

TC5116100BSJ60

Abstract: TC5116100BSJ70 TC5116100
Contextual Info: TOSHIBA TC5116100BSJ-60/70 PRELIMINARY 16,777,216 WORD X 1 BIT DYNAMIC RAM Description The TC51161OOBSJ is the new generation dynamic RAM organized 16,777,216 word by 1 bit. The TC51161OOBSJ utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins,

Contextual Info: KS0165 MULTIMEDIA AUDIO OVERVIEW The KS0165 wave table synthesizer with effect processor chip represents the state-of-the-art in multimedia audio technology. The KS0165 combines a high-quality 32-voice wavetable synthesizer, a powerful 16-bit CPU, MPU-401 compatibility, effect processor & 16k delay RAM into a single chip. The

Contextual Info: KMM372V400AK/AS DRAM MODULE KMM372V400AK/AS Fast Page Mode 4Mx72 DRAM DIMM with ECC, 4K Refresh, 3.3V FEATURES GENERAL DESCRIPTION • Performance Range: The Sam sung K M M 372V 400A is a 4M bit x 72 Dynam ic RAM high density m em ory module. The KMM372V400A - 6

Contextual Info: ^ e m Z M Ö 00EÖSÖ3 444 TOSHIBA TC5116100BSJ-60/70 PRELIMINARY 16,777,216 WORD X 1 BIT DYNAMIC RAM u> "c s Description TheTC 5116100BS J is the new generation dynamic RAM organized 16,777,216 word by 1 bit. TheTC 5116100BS J utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins,

Contextual Info: C ir v a v u iijy /v on» A o SP1148 a ^" C o rp o 'o tio n * CorpO'Qtion SIGNAL PROCESSING EXCELLENCE 16-Bit D/A Converter pP Controlled Gain & Offset FEATURES • 16-Bit Linearity ■ Low Power ■ Softw are P ro g ra m m a b le G a in a n d Offset ■ O n C h ip Latches, R eference & O utput

PD78C10A

Abstract: 78C11 PD78c10AGQ PD78C11A PA78CP14GQ PA-78CP14GQ 78c10 R2M 45 ZC2C 87AD
Contextual Info: 8 t* 7 !• ‘ ì / ' s ' f — ? A / D 3 4 - ? /4 ' O //PD78CllA(A iil6tf>y hALU , ROM, RAM , A / D ^ V ^ - ^ , 'J 7 ^ " f £ 1 ^-y-70^ S I I L , è ) 2 hÌ W i h •# ? >J (ROM /RAM ) ^tÈSS’C è -&CMOS 8 t*7 b • - W ^ n 3 >•b°^- —^ T '’t 'o//PD78C10A(A) ¡¿/¿PD78C11A(A) ^ i>ROM$‘|^t’>t f pHn t',

Mil-Std-883s

Abstract: ACTS630MS
Contextual Info: ACTS630MS HARRIS S E M I C O N D U C T O R Radiation Hardened EDAC Error Detection and Correction December 1992 Pinouts Features • 1.25 Micron Radiation Hardened SOS CMOS 28 PIN CERAMIC DUAL-IN-UNE MIL-STD-1835 DESIGNATOR CDIP-T28, LEAD FINISH C TOP VIEW

Contextual Info: HS-26CT32RH Semiconductor Radiation H ardened Q u ad Differential Line R e c e iv e r August 1995 Pinouts Features • 1.2 Micron Radiation Hardened CMOS HS1-26CT32RH 16 LEAD CERAMIC SIDEBRAZE DIP MIL-STD-1835: CDIP2-T16 TOP VIEW - Total Dose Up to 300K RAD Si

Contextual Info: HS-26C32RH Semiconductor Radiation H ardened Q u ad Differential Line R e c e iv e r August 1995 Pinouts Features • 1.2 Micron Radiation Hardened CMOS HS1-26C32RH 16 LEAD CERAMIC SIDEBRAZE DIP MIL-STD-1835: CDIP2-T16 TOP VIEW - Total Dose Up to 300K RAD Si

P1 3003

Abstract: 54F521 UPS schematics and wiring diagrams
Contextual Info: M IL -M -38510/347 1 MAY 1985 r MI LI TA R Y SPECI F I CAT I ON M I CROCI RC UI T S, D I G I T A L , ADVANCED SCHOTTKY T T L , 8 - B I T I D E N T I TY COMPARATOR MONOLI THI C SI LI CON This s p e c i f i c a t i o n is me nt s and Agencies 1. a p p r o v e d f o r use by a l l D e p a r t ­

MM4220DF/MM5220DF

Abstract: mm5221 MM4240 DS8807 MM5017 54S287 MM1402a equivalent transistor bf 175 MM74C920 MM5061
Contextual Info: Edge Index by Product Family NATIONAL This is National's first Memory handbook containing information on MOS and Bipolar Memory Components, Systems, Application Notes and Support Circuits. For detailed information on Interface Circuits and other major product lines, contact a National sales office, representative, or distributor.

Contextual Info: W9864G6GB 1M x 4 BANKS × 16 BITS SDRAM Table of Contents1. GENERAL DESCRIPTION. 3 2. FEATURES . 3

Contextual Info: IBM13T4644MC IBM13T1649NC 1M x 64 S D R A M SO DIMM Features • 144 Pin emerging JEDEC Standard, 8 Byte Small Outline Dual-In-line Memory Module • 1Mx64 Synchronous DRAM SO DIMM • Performance: \ Units \ -10 i CAS Latency E 3 100 •MHz : ;tcK ;Clock Cycle

78CP18

Abstract: TFK 241 TFK 2561 23 tfk 101 8461 1rc NEC 2561 TFK 082 uPD78CG14 78C14 78C18
Contextual Info: MOS M O S Integrated Circuit ^PD 78C P18 A 8 *y h • ' > > " jy ° • - V - r ^ P Z I V t f z L — ¿¿PD 78CP18(A )ii, /« P D 7 8 C 1 8 ( A ) ^ | * ] / 1 ^ X ? ROM £ *7 > • ? 4 A PROM ¡ i g § V y • ^ U P R O M l p nn i i , 1$ I *fe-y h ^ i f (i3fc<Z>a-— t f - X