TT 95 N 1200 DIMENSION Search Results

FS20R06XE3

Abstract: aeg powerblock tt bsm25gp120 b2 thyristor aeg aeg powerblock tt 32 n STR W 6856 DATA SHEET HIGH VOLTAGE ISOLATION DZ 2101 FS450R12KE3 S1 MR 4710 IC aeg powerblock dd
Contextual Info: Power Semiconductors » Short Form Catalog » 2004 A Wide Range In Short Words. An Infineon Technologies Company go to content go to content eupec eupec European Power Semiconductors and Electronics Company – is situated in Warstein and is one of the world’s leading manufacturers of Power Semiconductors

FS450R12KE3 S1

Abstract: infineon pmb 6850 e bsm25gp120 b2 HIGH VOLTAGE ISOLATION DZ 2101 infineon pmb 6850 Thyristor eupec POWERBLOCK 2SD 1460 pmb 6850 V61-14 BSM35GP120
Contextual Info: Power Semiconductors Shortform Catalog 2003 An Infineon Technologies Company go to content eupec eupec Inc. headquartered in Lebanon, New Jersey, provides a wide array of innovative semiconductor products, includinge IGBT high power and standard modules, thyristors and diodes.

116UM152M050TT

Abstract: 116XM332M050TT 116YM472M050TT
Contextual Info: AT C 116 SERIES MICROCAPS Termination Area L T W T depends upon capacitance value. ATC 116 SERIES MICROCAP® – The116 series SLC with a conventional straight-sided design offers the highest capacitance per outline size. This design allows the user to match line width or design a custom capacitor for limited circuit dimensions.

FS300R12OE4P

Abstract: FS450R12OE4P FP06R12W1T4 F3L400R12PT4 bt 1690 scr fp150r07n3e4 F3L300R12PT4 Eupec thyristors catalog FF150R12RT4 Dz800S17ke3
Contextual Info: Short Form Catalog 2012 High Power Semiconductors for Industrial Applications www.infineon.com/highpower Auch mit dem KuKa Kurzkatalog 2012 bieten wir Ihnen wieder einen Überblick über dieses Spektrum mit vielen Details. Durch ständigen Dialog mit unseren Kunden haben wir auch in

Contextual Info: 1N8028-GA High Temperature Silicon Carbide Power Schottky Diode VRRM VF IF QC Features Package •          RoHS Compliant 1200 V Schottky rectifier 250 °C maximum operating temperature Electrically isolated base-plate Zero reverse recovery charge

Contextual Info: 1N8028-GA High Temperature Silicon Carbide Power Schottky Diode VRRM VF IF QC Features Package •          RoHS Compliant 1200 V Schottky rectifier 250 °C maximum operating temperature Electrically isolated base-plate Zero reverse recovery charge

siemens matsushita hf

Abstract: 4.7B2 b6474 B25839-J6474 B25839-B6224-M B25839-B6105-K J647 IEC 68-1 B25839B KMC SERIES CAPACITORS
Contextual Info: MKV AC Capacitors Coupling, Damping B 25 839 Surge-proof High insulation resistance High rate of voltage rise permitted Low dissipation factor Also suitable for general-purpose applications K LK O 081-P Construction • Self-healing • Plastic dielectric

Contextual Info: Molded AXIAL INDUCTORS AB R AC ON C O R P O R A T I O N =9 C MOLDED Dimensions mm 1.25" min. (31.75) 1537M Series STANDARD SPEC FICATIONS Operating Temperature R a n g e. -55“C to +105°C Ambient T em perature. +90°C

Contextual Info: Bipolar transistors-2SA series Package dimensions The following illustrations show the package dimensions and the associated land pattern for each package. 2 0 ± 0 .2 1.3 t 0.1 04*01 0 65 0.65 0 £2 — D. os ' U <>$ <=>$ <3>tt : • *ir JL. I |° - 3 r g ; .

Contextual Info: 1N8028-GA High Temperature Silicon Carbide Power Schottky Diode VRRM IF Tc=25°C QC Features Package •          RoHS Compliant 1200 V Schottky rectifier 250 °C maximum operating temperature Electrically isolated base-plate Zero reverse recovery charge

95006 dscc

Contextual Info: gh Reliability High Reliability rfaceSurface MountMount Resistor Resistor High Reliability Approved Surface Mount Resistor • DSCC Approved Series MCHP Series nt surge capability · Excellent surge capability e Metal Glaze technology MCHP Series · Reliable

GI 312 diode

Abstract: bridge RECTIFIER GI IGBT 50 amp 1000 volt vqe 23 MHPM7B16A120B MHPM7A15S120DC3 5SC3 2a1012
Contextual Info: MOTOROLA Order this documenti by MHPM7B16A120B/D SEMICONDUCTOR TECHNICAL DATA Hybrid Power Module Integrated Power Stage for 3.0 hp Motor Drives M H PM 7B 16A 120B This device is not recommended for new designs (This device is replaced by MHPM7A15S120DC3)

Contextual Info: Q r * CHANGZHOU PN H U AW EI E L E C T R O N IC S C O .,L T D . CD135M W#Sta,KTJ-RTii.85-C 2000/jMtf High ripple current .Size may be selected .Load life of 2000 hours at 85"C. Used large power source, converter circuit .etc. Specifications J @ Item i t 14

Contextual Info: Resistors General-Purpose Failsafe General-Purpose Failsafe Moulded Wirewound Resistors Moulded Wirewound Resistors Make Possible Welwyn Components SP20 / SP20F Series SP20/SP20F Series SP20F UL1412 recognised fusing replacement for*BW20/BW20F • Drop-in

Contextual Info: Die Datasheet High Temperature Silicon Carbide Power Schottky Diode GB20SHT12-CAU VRRM o IF @ 25 C QC = = = 1200 V 30 A 58 nC Features •        1200 V Schottky rectifier 250 °C maximum operating temperature Zero reverse recovery charge

diode SKN molybdenum

Contextual Info: s e m ik r d n Section 15: SEMICELL Power Semiconductor Chips The following tables contain our standard types. Other types or selections are available on special request. Please contact your SEMIKRON office. SEMICELL® Rectifier Diode Chips , T^ es $ Y s k n 3

KT 382

Abstract: pdaat powerex ks powerex kt KT 783
Contextual Info: POü ÉREX INC 'ìlD D • TaTMLEÍToOQlñTi T Thyristor Assemblies-Air Cooled Device Assembly Module Typ« PTA6T620_15 _20 _30 PTA6T62S_25 _30 _ 40 PTA7T720 _35 _45 _55 PTA7T7S0_55 _65 _75 PTA9T9G0_ 08 _10 _ 12

Contextual Info: General-Purpose Failsafe General-Purpose Failsafe Moulded Moulded Wirewound WirewoundResistors Resistors Welwyn Components SP20 / SP20F Series SP20/SP20F Series SP20F UL1412 recognised fusing * 0.1 ohm to 1200 ohms for BW20/BW20F replacement • Drop-in F version has

4270A

Contextual Info: 4 270-A Valve — S ta n d a rd Valves 4270-A V A LV E T R IO D E . PLATE I SPEC IFIC A T IO N . Cathode. Thoriated Tun gste n filament. C o n sta n t voltage type. Dimensions. 17 17" 43 cms. O verall length 4- MAX. M axim u m diam eter 4 " (10-2 cms.) N e t w eigh t

NE25337

Abstract: KR sot-143 NE25339 marking X_j sot u79 018
Contextual Info: N E C / NEC L4574m 1SE D CALIFORNIA DGOlbSÔ 5 GENERAL PURPOSE DUAL-GATE GaAs MESFET FEATURES NE25337 NE25339 OUTLINE DIMENSIONS umtsmmm O U T LIN E 37 • SUITABLE FOR USE AS RF AMPLIFIER AND MIXER IN UHF APPLICATIONS • LOW C r s s : 0.02 pF (TYP) • HIGH Gps : 20 dB (TYP)

Contextual Info: RST/RSI U ltra m in ia tu re Plug-In TVansformers and In d u cto rs TRANSFORMERS Matching Impedance Pri Sac Max DC Ma Unbal In Prl DCR ± 2 5 tt Prl Sac Over­ all Tumt Ratio Max Power* level MW at 300Hz Connactlon Fig. NOTES RST-09 10K C T 10K C T 1 .0 100 0

1N5329

Abstract: in5247 zener diode in5287 IN5226 in5231 in5242 1N3237 Z401 IN5222 IN5230
Contextual Info: dF J b m s ^ es 3459325 ODOOIST s | ~ FAGOR E L E C T R O N I C S 98D FAGOR 00159 1N5221 1NS257 r ~ u ~ n ¿0.5 W Zener Diodes Dimensions in mm. inches Voltage 2.4 to 33 V. Power to i ? S s O.SW (0149) 38 s 1 61 (awi) Mounting instructions 1. Min. distance from body to soldering point,

Contextual Info: NTT92B Naina Semiconductor Ltd. Thyristor-Thyristor Module, 95 Amps Features • • • • Improved glass passivation for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabilities Low thermal resistance Voltage Ratings TA = 25oC, unless otherwise noted

Contextual Info: Netz-Dioden-Module Rectifier diode modules Modules à diodes pour applications réseau Typ Vrrm Type V rs m = Ifrmsm Vrrm + / i 2dt Ifsm V TO Ifavm^ c rT Rthjc tv, max RthCK Maßbild Outline 100 V 10 m s, 10 m s, tv ,= tvj max t/j max W t» ,= tvj max sin