TT 80 SCR MODULE Search Results

IP173

Abstract: kuka 3 phase bridge fully controlled rectifier diode 1600 rectifier B6HK EUPEC tt 105 N 16 100N B6U 205 3 phase bridge rectifier B6u 08
Contextual Info: kuka-2003-inhalt.qxd 17.04.2003 IGBT 10:34 Uhr Seite 20 SCR / Diode Modules Presspacks Stacks Outlines Accessories Explanations 20 IsoPACK Bridge Rectifier Type 3 phase bridge rectifier, uncontrolled DD B6U 85 N 1 DD B6U 145 N 1) DD B6U 205 N 1) DD B6U 215 N 2)

EUPEC DD 105 N 16 L

Abstract: all type of thyristor EUPEC tt 162 n 16 EUPEC Thyristor thyristor tt 162 n EUPEC Thyristor TT thyristor tt 162 n 12 tt 162 n 16 module bsm 25 gp 120 Eupec bsm 25 gb 120
Contextual Info: IGBT SCR / Diode Modules Presspacks Stacks Outlines Accessories Explanations 96 Type designations Presspacks IGBT Modules T 930 S 18 T M C T D A 930 1 4 6 7 8 9 3 thyristor diode asymmetric thyristor average on state current A standard ceramic disc high power ceramic disc

thyristor tt 18 n 800

Abstract: vskh vskt 250 vskt250 scr k 5500 thyristor tt 18 N 1100
Contextual Info: VSK.170PbF, VSK.250PbF Series Vishay High Power Products SCR/SCR and SCR/Diode MAGN-A-PAK Power Modules , 170 A/250 A FEATURES • High voltage • Electrically isolated base plate • 3500 VRMS isolating voltage • Industrial standard package • Simplified mechanical designs, rapid assembly

DATASHEET SCR 131

Abstract: vskt250 scr battery charger thyristor TT 45 N 1200
Contextual Info: VSK.170PbF, .250PbF Series Vishay High Power Products SCR/SCR and SCR/Diode MAGN-A-PAKTM Power Modules , 170/250 A FEATURES • • • • • • • • • High voltage Electrically isolated base plate 3500 VRMS isolating voltage Industrial standard package

Contextual Info: VSK.170PbF, VSK.250PbF Series Vishay Semiconductors SCR/SCR and SCR/Diode MAGN-A-PAK Power Modules , 170 A/250 A FEATURES • High voltage • Electrically isolated base plate • 3500 VRMS isolating voltage • Industrial standard package • Simplified mechanical designs, rapid assembly

E78996 scr

Abstract: S2000 series scr vskt thyristor TT 45 N 1200 3 phase BUSBAR
Contextual Info: VSK.170PbF, VSK.250PbF Series Vishay Semiconductors SCR/SCR and SCR/Diode MAGN-A-PAK Power Modules , 170 A/250 A FEATURES • High voltage • Electrically isolated base plate • 3500 VRMS isolating voltage • Industrial standard package • Simplified mechanical designs, rapid assembly

6 PHASE FULL WAVE SCR BRIDGES

Abstract: E78996 scr
Contextual Info: VSK.170PbF, VSK.250PbF Series Vishay Semiconductors SCR/SCR and SCR/Diode MAGN-A-PAK Power Modules , 170 A/250 A FEATURES • High voltage • Electrically isolated base plate • 3500 VRMS isolating voltage • Industrial standard package • Simplified mechanical designs, rapid assembly

E78996 scr

Abstract: vskt 250
Contextual Info: VSK.170PbF, VSK.250PbF Series Vishay Semiconductors SCR/SCR and SCR/Diode MAGN-A-PAK Power Modules , 170 A/250 A FEATURES • High voltage • Electrically isolated base plate • 3500 VRMS isolating voltage • Industrial standard package • Simplified mechanical designs, rapid assembly

6AI diode

Contextual Info: International IS Rectifier 4Ö5545E Oülb?^ 32fl H I N R SERIES IRK.F152 FAST SCR I DIODE and SCR / SCR INT-A-PAK Power Modules Features • ■ ■ ■ ■ ■ Fast turn-off thyristor Fast recovery diode High surge capability E lectrically isolated baseplate

DIODE A34

Contextual Info: ECOsine Passive January 2015 ECOsine® Passive Harmonic Mitigation Portfolio 1 ECOsine® Passive Schaffner Group The Schaffner Group is the international leader in development and production of solutions which ensure efficient and reliable operation of electronic systems. The Group's broad range of product and services

scr tic 106

Abstract: HBP MITEL
Contextual Info: M ITEL MP03 XXX 300 Series Phase Control Dual SCR, SCR/Diode Modules SEMICONDUCTOR Supersedes January 1994 version, 4.2 DS4482-5.0 Decem ber 1998 FEATURES • Dual Device Module ■ Electrically Isolated Package ■ Pressure Contact Construction ■ International Standard Footprint

Contextual Info: VS-VSK.170PbF, VS-VSK.250PbF Series www.vishay.com Vishay Semiconductors SCR/SCR and SCR/Diode MAGN-A-PAK Power Modules , 170 A/250 A FEATURES • High voltage • Electrically isolated base plate • 3500 VRMS isolating voltage • Industrial standard package

Contextual Info: VSK.170PbF, VSK.250PbF Series www.vishay.com Vishay Semiconductors SCR/SCR and SCR/Diode MAGN-A-PAK Power Modules , 170 A/250 A FEATURES • High voltage • Electrically isolated base plate • 3500 VRMS isolating voltage • Industrial standard package

P4 diode

Abstract: RHS 25 105 OHMS J 300 Amps SCR 18XX00 R7S0 scr control circuit for welding Z7A marking TT 80 SCR MODULE scr 209 PEC 816
Contextual Info: POWEREX INC 1SE » • 72T4b51 0003^07 T ■ f O M Æ V K G i r POW-R-BRIK Powerex, Inc., Hillls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107,72003 Le Mans, France (43) 72.75.15 P h d S B C O tltfO l

PC133-222

Abstract: L-DIM-168-32 MO-161 PC100-222 PC133-333 TSOP54
Contextual Info: HYS 64V16302GU SDRAM-Modules 3.3 V 16M x 64-Bit, 128MByte SDRAM Module 168-pin Unbuffered DIMM Modules • 168 Pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications using 256Mbit technology • Programmed Latencies: Product Speed

so-dimm 200

Abstract: HYS64V16200GDL HYS64V16200GDL-7 HYS64V16200GDL-8 HYS64V32220GDL PC100-222 TSOP54 L-DIM-144-10
Contextual Info: 144 pin SO-DIMM SDRAM Modules HYS64V16200GDL HYS64V32220GDL 128MB & 256 MB PC100 / PC133 • 144 Pin Eight Byte Small Outline Dual-In-Line Synchronous DRAM Modules for PC100 and PC133 notebook applications • One bank 16M x 64 128MByte and two banks 32M x 64 (256 MByte)

PC133-333-520

Abstract: PC100-222 PC133-222 PC133-333 L-DIM-168-33 PC133 registered reference design
Contextual Info: HYS 64/72V32300GU SDRAM-Modules 3.3 V 32M x 64/72-Bit, 256MByte SDRAM Modules 168-pin Unbuffered DIMM Modules • Single + 3.3 V ± 0.3 V power supply • 168 Pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications using 256Mbit technology.

pc133 sdram

Abstract: PC100-222 PC133-222 PC133-333 PC133 registered reference design
Contextual Info: HYS 64/72V64220GU SDRAM-Modules 3.3 V 64M x 64/72-Bit, 512MByte SDRAM Modules 168-pin Unbuffered DIMM Modules • Single + 3.3 V ± 0.3 V power supply • 168-pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications using 256Mbit technology.

PC133-222

Abstract: PC133-333 PC133-333-520 PC133 SDRAM Unbuffered DIMM PC100-222 TSOP54 PC133-222-520 MO-161-BA PC133 registered reference design
Contextual Info: HYS 64/72V16300/32220GU SDRAM-Modules 3.3 V 16M x 64/72-Bit 1 Bank 128MByte SDRAM Module 3.3 V 32M x 64/72-Bit 2 Bank 256MByte SDRAM Module 168-Pin Unbuffered DIMM Modules • Programmed Latencies: • 168-Pin unbuffered 8-Byte Dual-In-Line SDRAM Modules for PC main memory

1307 TRANSISTOR

Abstract: H15B1 4N38-4N38A "Photo Interrupter" dual transistor 4N38 4N38A IC VS 1307 H11AA1 H11AA2 H11B2
Contextual Info: PROGRAMMABLE THRESHOLD COUPLER GE TYPE H11A10 PAGE NO. 1281 CURRENT ISOLATION VOLTAGE «VpK» TRANSFER RATIO MIN. MIN. 1500 1 10% AC INPUT COUPLER H11AA1 H11AA2 1289 128? I I 20% 10% 1500 1500 ID nA MAX. BVceo (VOLTS) MIN. 50 30 100 200 30 30 100 100 100

Diode LT 410

Contextual Info: F = 7 SCS -THOMSON * 7 i» MDS35 M 3 © iL iC T [i» g S DIODE /THYRISTORMODULE FEATURES • V d rm = V rrm UP T 0 1200 V ■ lT(AV = 25 A ■ HIGH SURGE CAPABILITY ■ INSULATED PACKAGE: INSULATING VOLTAGE 2500 V(rmS) DESCRIPTION The MDS35 family are constitued of one rectifier

label infineon lot number

Abstract: HYB39S256400CT-7.5 pc100 gerber
Contextual Info: HYS 72Vx3xxGR-8 PC100 Registered SDRAM-Modules 3.3 V 168-pin Registered SDRAM Modules 256 MB, 512 MB & 1 GB Densities • Programmable CAS Latency, Burst Length, and Wrap Sequence Sequential & Interleave • 168-pin JEDEC Standard, Registered 8 Byte Dual-In-Line SDRAM Modules for Server

Contextual Info: .%3:' ,QVWDOODWLRQ DQG 2SHUDWLRQ 0DQXDO 5HY $ 6XSSOHPHQWDO ,QIRUPDWLRQ &KDQJHV WR :LULQJ 6HFWLRQ ,* RQ 3DJH  G. Remote Start/Stop Switch Connections The control is supplied with a prewired Start/Stop Switch with a normally open "NO" stop contact. Jumper J6 is factory set to the "NO" position.

transistor Bc 542

Abstract: hys72v128520gr 72V32600GR-7 PC133R-333-542 CL 3
Contextual Info: HYS 72Vxx5/6x0GR-7.5 Low Profile PC133 Registered SDRAM-Modules 3.3 V Low Profile 168-pin PC133 Registered SDRAM Modules for 1U Server Applications PC133 128 MByte Module PC133 256 MByte module PC133 512 MByte Module PC133 1024 MByte Module • 168-pin Registered 8 Byte Dual-In-Line