FAST Search Results

7408, 7404, 7486, 7432

Abstract: RF400U functional diagram of 7400 and cd 4011 ls 7404 180 nm CMOS standard cell library TEXAS INSTRUMENTS 74191 4BITS s273 buffer 74374 7408 CMOS cmos 7404
Contextual Info: TGC100 Series CMOS Gate Arrays RELEASE 3.0, REVISED JANUARY 1990 • Twelve Arrays with up to 26K Available Gates • Fast Prototype Turnaround Time • Extensive Design Support - Design Libraries Compatible with Daisy, Valid, and Mentor CAE Systems - Tl Regional ASIC Design Centers

Contextual Info: TLC339M, TLC339I, TLC339C QUADRUPLE MICROPOWER LinCMOS COMPARATORS D3135, DECEMBER 1986-R EV ISED FEBRUARY 1989 • Very Low Power. . . 200 jjiW Typ at 5 V T LC 339M . . . J PACKAGE TLC339I. TLC339C . . . D. J, OR N PACKAGE • Fast Response Time . . . 2.5 |xs Typ with

Contextual Info: SILICON EPITAXIAL JUNCTION TYPE HIGH EFFICIENCY RECTIFIER HED 1DL41A SWITCHING TYPE POWER SUPPLY APPLICATIONS. Repetitive Peak Reverse Voltage Vr r m =200V Average Forward Current IF ( A V ) = 1 . 0 A (Ta=64°C) V a r y Fast Reverse-Recovery Time 35ns (Max.)

TL054A1

Abstract: TL051 TL051 equivalent diode u1d 315
Contextual Info: TL05x, TL05XA, TL05xY ENHANCED-JFET LOW-OFFSET OPERATIONAL AMPLIFIERS _ SLOS178 - FEBRUARY 1997 Direct Upgrades to TL07x and TL08x BiFET Operational Amplifiers Faster Slew Rate 20 V/|js Typ Without Increased Power Consumption • •

Contextual Info: TOSHIBA MG90V2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG90V2YS40 HIGH PO W ER SWITCHING APPLICATIONS Unit in mm MOTOR CONTROL APPLICATIONS 4-FAST-ON-TAB #110 • The Electrodes are Isolated from Case. • High Input Impedance • Includes a Complete Half Bridge in One

sn74f160

Abstract: SN54F160
Contextual Info: SN 54F160A, SN 54F162A, SN 74F160A, SN 74F162A SYNCHRONOUS 4-BIT DECADE COUNTERS D2932, MARCH 1987-REVISED JANUARY 1989 • Internal Look-Ahead for Fast Counting • Carry O utput fo r n-Bit Cascading • Fully Synchronous Operation for Counting • Package Options Include Plastic "Sm all

Contextual Info: SILICON DIFFUSED TYPE FAST RECOVERY RECTIFIER <j SWITCHING TYPE POWER SUPPLY APPLICATIONS. Unit in mm . Repetitive Peak Reverse Voltage : Vrr{,j=600V . Average Forward Current : If AV =1.5A . Very Fast Reverse-Recovery Time : trr=200ns (Max.) + MAXIMUM RATINGS

MG150H2CL1

Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG150H2CL1 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. FAST—ON—TAB #110 MS w.s±a5 FEATURES: . The Collector is Isolated from Case. . With Built-in Free Wheeling Diodes. . High DC Current Gain : hpjr=80 Min. (Ic=150A)

ic 109b

Abstract: MG100M2YK1 Di 762 transistor transistor B 764
Contextual Info: MG100M2YK1 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 6-FAST-ON-TAB t 110 JAPAN 3-M5 FEATURES: 4 -065±C13 . The Collector is Isolated from Case. to . 2 Power Transistors and 2 Free Wheeling

TC51V18160

Contextual Info: INTEGRATED TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT CIRCUIT TC51V18160 C S / CFTS - 60 TOSHIBA TECHNICAL DATA SILICON GATE CMOS TENTATIVE DATA 1,048,576 WORD x16 BIT FAST PAGE DYNAMIC RAM DESCRIPTION The TC51V1S160CJS-CFTS is the fast page dynamic R A M organized 1,048,576 words by 16 bits.

1r5nu41

Contextual Info: SILICON D IFFUSED T Y P E S U P E R FA ST R E C O V E R Y RECTIFIER 1R5NU41 Unit in mm SWITCHING TYPE POWER SUPPLY APPLICATIONS. . Repetitive Peak Reverse Voltage : V r r >i=1C00V . Average Forward Current : Ip AV =1.5A . Very Fast Reverse-Recovery Time : trr=100ns

BYV27-50

Abstract: BYV27-100 BYV27-150 UES1103 UES1101 UES1100
Contextual Info: RECTIFIERS High Efficiency, 2.5A UES1101 UES1102 UES1103 FEATURES • Very Fast Recovery Times • Very Low Forward Voltage • Small Size • Convenient Package BYV27-50 BYV27-100 BYV27-150 DESCRIPTION An axial leaded power rectifier useful in many switching applications.

Contextual Info: SN74F161A SYNCHRONOUS 4-BIT BINARY COUNTER SDFS056A - D2932, MARCH 19B7-REVISED OCTOBER 1993 • Internal Look-Ahead Circuitry for Fast Counting • Carry Output for N-Bit Cascading D OR N PACKAGE TOP VIEW • Fully Synchronous Operation for Counting • Package Options Include Plastic

TC5117800bnt-60

Abstract: TC5117800B
Contextual Info: TOSHIBA TC5117800BNJ/BNT-60/70 PRELIMINARY 2,097,152 WORD X 8 BIT FAST PAGE DYNAMIC RAM Description The TC5117800BNT is the fast page dynamic RAM organized 2,097,152 words by 8 bits. The TC5117800BNT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins,

TC160G

Abstract: toshiba LGA Nand TC170C14 TC26SC TC170C1 TC170C29
Contextual Info: TOSHIBA TC170C CMOS Standard Cell 0.7\xm , 5.0V ASICs The 0.7nm, 5V TC170C allows higher area efficiency, system performance and device integration with lower power than previous generation 5V standard cell products Benefits • Advanced 0.7 micron CMOS process with fast 250ps gate

LM311 application notes

Abstract: LM311 LM3111 LM311 OPERATIONAL AMPLIFIER OPERATION lm311 application note LM311 application SLCS007A LM311DBLE 100 khz crystal
Contextual Info: LM111, LM211, LM311, LM311Y DIFFERENTIAL COMPARATORS WITH STROBES SLCS007A- SEPTEMBER 1973 - REVISED FEBRUARY 1992 Fast Response Times LM111 . . . J PACKAGE TOP VIEW Strobe Capability Maximum Input Bias C u rren t. . . 300 nA NC[ 1 EMIT O U T [ 2 Maximum Input Offset C u rren t. . . 70 nA

2N6797

Contextual Info: POWER MOSFET TRANSISTORS JTX JTXV 200 Volt, 0.4 Ohm N-Channel DESCRIPTION The U nitrode power M O SFET design u tilizes the m ost advanced technology available. This efficien t design ach ieves a very low Rosiom and a high transconductance. FEATURES • Fast Sw itching

Contextual Info: RECTIFIERS SES5601C SES5602C SES5603C High Efficiency, 25A Center-Tap FEATURES • Low Forward Voltage • Fast Switching Speed • Convenient Package • High Surge Capability • Low Thermal Resistance • Mechanically Rugged TO-3 Package • Available as Positive or Negative Center-Tap

tc183

Abstract: E17G tc183G TC163G TC180G single port RAM TC183e Toshiba TC8570
Contextual Info: TOSHIBA TC183G/ECMOS ASIC Family 3.0V/3.3V and 5.0V, 0.5nm1 TheTC183G/E eases the transition from 5V to 3V based systems. Benefits • Mixed 3.0/3,3V and 5V I/O 0.5 micron CMOS process with fast 230ps gate delay performance with the power savings of a 3V core

SDFS089

Contextual Info: SN74F169 SYNCHRONOUS 4-BIT UP/DOWN BINARY COUNTER SDFS089 - MARCH 1987 - REVISED OCTOBER 1393 Fully Synchronous Operation for Counting and Programming d or n package <TOP v i e w Internal Look-Ahead Circuitry for Fast Counting U /D [ 1 C LK [ 2 Carry Output for N-Bit Cascading

um611864

Contextual Info: a S amar a a P R E L IM IN A R Y - UM611864 64K X 18 Bit Synchronous High Speed CMOS SRAM Features Single +5V power supply Fast access times: 9/11 ns Current: Operating: 275mA Standby: 95mA Synchronous self-timed write Individual byte write control Asynchronous output enable

Contextual Info: UCC5632 UNITRODE ADVANCE INFORMATION Multi-mode LVD/SE SCSI 9 Line Terminator w/ 2.85V Regulator FEATURES • Auto Selection Single Ended (SE) or Low Voltage Differential (LVD) Termination • Meets SCSI-1, SCSI-2, SCSI-3 SPI, Ultra Fast-20, Ultra-2 (SPI-2 LVD) and Ultra

S6370

Contextual Info: S6370 THYRISTOR SILICON DIFFUSED JUNCTION Unit in mm LOW POWER SWITCHING APPLICATIONS STROBO TRIGGER 0 5 . 1 MAX. • Repetitive Peak Off-State Voltage VDRM=400V • Repetitive Peak Reverse Voltage Vr r m =4° o v • Fast Turn On Time tgt= l .5 jjs I 1

Contextual Info: UT54ACS 169/UT54ACTS 169 Radiation-Hardened 4-Bit Up-Down Binary Counters FEATURES • • • • • • • • • • Fully synchronous operation for counting and programming Internal look-ahead for fast counting Carry output for n-bit cascading Fully independent clock circuit