TT 46 N 12 LOF Search Results

L0742

Abstract: L0742 81 MPA1452H TL08 T460 IC-6338 093L
Contextual Info: SEC j m = f T / x r x m 'ê r y < r7 - b ^ X ^ C o m p o u n d P o w e r T ra n s is to r A / N P N l t ° ^ + '> 7 ; ^ / P ij = l > Ï '> A 1 4 5 2 H U>{ I i f f l NPN Silicon Epitaxial Transistor High Speed Switching Industrial Use DC —DC 3 > / < — 9 •V U / 4 Y ■* - ? • U u - • 7 > 7 ° t c

Contextual Info: PM4351 COMET STANDARD PRODUCT DATA SHEET ISSUE 11 COMBINED E1/T1 TRANSCEIVER :1 2: 10 PM PMC-1970624 ur sd ay ,0 3N COMET ov em be r, 20 05 10 PM4351 DATA SHEET ISSUE11: NOVEMBER 2005 Do wn lo ad ed by C on te n tT ea m of Pa r tm in er In co n Th COMBINED E1/T1

LCM-5523-32NTK

Abstract: JST XHP-4
Contextual Info: LCD GRAPHIC MODULE 640 x 480 dots 1/240 duty POWER SUPPLY FOR BACK LIGHT CFP-55 AplîHsllf CFL Cold cathode Fluorescent 1=1 > h P - J U * ' - K mm |/< y BACKLIGHT In > h p - ; n s i CONTROL BOARD CONTROL LSI CL-GD610/620 ABSOLUTE MAXIMUM RATINGS § a ¡3

Contextual Info: :5 9: 12 PM PM5317 SPECTRA-9953 Telecom Standard Product Data Sheet Released ru ar y, 20 07 06 PM5317 ne sd ay ,0 7F eb SPECTRA_9953 Data Sheet Proprietary and Confidential Released Issue No. 6: January, 2007 Do wn l oa de d by C on te n tT ea m of Pa rtm

3014 LED

Abstract: 3014 LED t10 ic-110 1N3064 marking 2YL ISTD-883
Contextual Info: I I I MIL-M-38510/152B QÏÏÂLIFICAflOlJ T REQUIREMENTS | REMOVED _ I W W f c -MIL-M-38510/152A 18 March 1985 O i MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, T T L , DATA DECODERS/DEMULTIPLEXERS, MONOLITHIC SILICON j INACTIVE FOR NEW DESIGN AFTER DATE OF THIS REVISION.

HY524400J70

Contextual Info: HY524400 Series •HYUNDAI 1Mx 4-bit CMOS DRAM DESCRIPTION The HY524400 is the new generation and fast dynamic RAM organized 1,048,576 x 4 bits. The HY524400 utilizes CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins

l1424

Abstract: SL1494 LM8368 k460 LM8368D VLED-11 C79R lm8363 lm368dh SL2424
Contextual Info: _LM 8 3 6 8 Na 1 4 9 6 tA N - a. Y O X — 0133 •> ' x-f IH iÉ • ? 5 - î.? 0 7 ? ttflg • W Ä * LM036BO: LED<# 1:l:tì6. * LM0368DH : flt • LM83Î8DG: L E b C J 'iA S I H r j- D f r t ì L b u s k m ■ ç y j -> y * ? 0 - ï ? 5 i> 'Î

Contextual Info: PM4354 COMET-QUAD RELEASED ISSUE 6 FOUR CHANNEL COMBINED E1/T1/J1 TRANSCEIVER / FRAMER 12 :3 8: 53 PMC-1990315 AM DATASHEET 5N ov em be r, 20 04 PM4354 co n Fr id ay ,0 COMET-QUAD DATASHEET RELEASED ISSUE 6: MAY 2001 Do wn l oa de d by C on te n tT ea m of

J180D

Abstract: hpc2* nec LPC27 NEC asu TF8J PC2742 2742B IR LFN 0/TF8J UT12
Contextual Info: Bipolar Analog Integrated Circuit PC2742C.2742D tt * fi# « k 3 a + Q P S K a * iL s i /iPC2742C, 2742DW, B rtB S , CS U, * fc fI* i!W i4 5 J: t f *J*1*#CDQPSK Quad Phase Shift Keying « B lfc fn 'iT o /iP D 6 3 9 7 ,6 3 9 7 Y tli* ^ t) * a :* ^ tT , yJtH &tZZtifVZtto

HY531000S

Contextual Info: H Y 5 3 1 0 0 0 S e r ie s IM X 1-bit CMOS DRAM "H Y U N D A I DESCRIPTION The HY531000 is the new generation and fast dynamic RAM organized 1,048,576 x 1-bit. The HY531000 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

hy 1418

Abstract: tetris skg50 KJU64241 NJU6424 NJU6424FC1 x1rz IEGT KU 607 VC saa 1049
Contextual Info: NJU6424 \ m f é H • « z 'n - 7 - p n ^ m Æ S Ü l f Ê L C D i l^ m h P v ^ - 7 y K v 7 y ¡j ^î /< s v t x NJU6424là, IO«T 3 'û<n K y h v h V -y ? 7. LCD £ I ^ -y ~/XMWi T 5 L C D 3 > h 0 - 7 K v 'f / 'i T , âK^x-v h 7 "v , -/' — ? C R f6 « @ K ,

Contextual Info: 9: 32 PM S/UNI 9953 ASSP Telecom Standard Product Data Sheet Released ru sd ay ,0 7F eb S/UNI® 9953 ar y, 20 07 06 :5 PM5390 Data Sheet Proprietary and Confidential Released Issue 10 : January, 2007 Do wn l oa de d by C on te n tT ea m of Pa rtm in er In

3TE445

Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
Contextual Info: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group

MA-406 8.0000M-C3

Contextual Info: ill ÆSj ra?MrtriL V u.Ajm-mm S micmsemj Comm erce Drive s r s s s ^ 18936-1013 s o i 332 RF & MICROWAVE TRANSISTORS UHF SMALL SIGNAL HtGH FT • ■5,5 GHï VfcHY LOW NCISfc ALL GOLD ME': ALLI2E0 HERMETIC PACKAGE PâN CONNECTIONS DESCRIPTION Ttw SOI 332 is an all gold met&iltefid NPN silicon

NS32016

Abstract: NS32032 NS32008 NS32000 NS32381 N3325 NS32381-25 NS32532 91571-3 NS32081
Contextual Info: PRELIMINARY National Semiconductor NS32381-15/NS32381-20/NS32381-25/NS32381-30 Floating-Point Unit General Description The NS32381 is a second generation, CMOS, floating-point slave processor that is fully software compatible with its forerunner, the NS32081 FPU. The NS32381 FPU functions

Contextual Info: NN51V18160B seriesFast Page Mode CMOS 1M x 16bit Dynam ic RAM NPN>a< DESCRIPTION The NN51V18160B series is a high performance CMOS Dynamic Random Access Memory organized as 1,048,576 words by 16 bits. The NN51V18160B series is fabricated with advanced CMOS technology and designed with innovative

Contextual Info: :4 1: 05 AM S/UNI IMA 32 Telecom Standard Product Data Sheet Released n Mo nd ay ,3 0J S/UNI IMA 32 an ua ry ,2 01 2 12 PM7342 Datasheet Proprietary and Confidential Released Issue 2: March 2008 Do wn lo ad ed [c on tro lle d] by Co nt en tT ea m of Pa rtm

circuit diagram of ic 7493

Abstract: ic 7493 block diagram pin diagram of ic 7493 HY531000 HY531000S of IC 7493
Contextual Info: HY531000 S e rie s »H YUND AI IM X 1-bit CMOS DRAM DESCRIPTION The HY531000 is the new generation and fast dynamic RAM organized 1,048,576 x 1-bit. The HY531000 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

Contextual Info: 12 :4 0: 47 AM S/UNI IMA 84 Telecom Standard Product Data Sheet Released 0J an ua ry ,2 01 2 PM7341 In co n Mo nd ay ,3 S/UNI IMA 84 Datasheet Proprietary and Confidential Released Issue No. 7: March 2008 Do wn lo ad ed [c on tro lle d] by Co nt en tT ea m

IL69M

Abstract: 436Z pal16l8-20 RAX 15 PAL VIHH programming pulse 74935
Contextual Info: MI L- M-38510/506 31 MARCH 1987 j military microcircuits. digital , SPECIFICATION bipolar monolithic 1. prograkhable logic , silicon SCOPE 1.1 ‘T , scope. H r 1.2.1 This l l speci . The p a rt nu mb er shall ». 1» a c c o r d a n c e w i t h M I L - H - 3 8 5 1 0 .

74ABT16652

Abstract: BT16652DGG BT16652DL
Contextual Info: INTEGRATED CIRCUITS 74ABT16652 16-bit transceiver/register, non-invertinq 3-State Product specification 1995 Apr 05 IC23 Data Handbook Philips Semiconductors PHILIPS P H IL IP S 7110flPb 0005210 054 This Material Copyrighted By Its Respective Manufacturer

Contextual Info: GM71V18160A GM71VS18160AL LG S em icon C o.,L td . 1,048,576 W ORDS x 16 BIT CMOS DYNAMIC RAM Description Features The G M 71V 18I60A is the new generation dynamic RAM organized 1,048,576 words x 16 bits. GM 71V18160A has realized higher density, higher performance and various functions by utilizing

TA812

Abstract: toshiba AM SW sip9 TA8126F TA8126S 4V01
Contextual Info: TOSHIBA TA8126S/F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA8126S, TA8126F DC /DC CONVERTER FOR ELECTRIC TUNING 3V USE The TA8126S, TA8126F are DC/DC converter ICs, which are designed for biasing varactor diodes of tuner system. Those items are especially suitable for supplying high

Contextual Info: M i i V VITELIC V53C400 HIGH PERFORMANCE, LOW POWER 4M X 1 BIT FAST PAGE MODE CMOS DYNAMIC RAM PRELIMINARY 70/70L 80/80L 10/10L Max. RAS Access Time, tRAC 70 ns 80 ns 100 ns Max. Column Address Access Time, (tCAA) 35 ns 40 ns 50 ns Min. Fast Page Mode Cycle Time, (tpc)