TSSOP6 PACKAGE Search Results

Contextual Info: SOT363 TSSOP6; Tape reel SMD; standard product orientation 12NC ending 135 Rev. 1 — 20 November 2012 Packing information 1. Packing method Printed plano box Barcode label Reel Tape Barcode label Circular sprocket holes opposite the label side of reel QA Seal

Contextual Info: SOT363 TSSOP6; reel pack; reversed product orientation; 12NC ending 165 Rev. 1 — 20 November 2012 Packing information 1. Packing method Printed plano box Barcode label Reel Tape Barcode label Circular sprocket holes opposite the label side of reel QA Seal

Contextual Info: SOT363 TSSOP6; Tape reel SMD; standard product orientation 12NC ending 115 Rev. 1 — 13 November 2012 Packing information 1. Packing method Printed plano box Barcode label Reel Tape Barcode label Circular sprocket holes opposite the label side of reel QA Seal

Contextual Info: NX3020NAKS 30 V, 180 mA dual N-channel Trench MOSFET 6 July 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

Contextual Info: PMG45UN 20 V, single N-channel Trench MOSFET 13 November 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a SOT363 (SC-88) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

TSSOP-6

Abstract: MOSFET TRANSISTOR SMD MARKING CODE 7
Contextual Info: NX7002AKS 60 V, dual N-channel Trench MOSFET Rev. 1 — 1 March 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

sot363 aaa

Abstract: BSS13
Contextual Info: BSS138BKS 60 V, 320 mA dual N-channel Trench MOSFET Rev. 1 — 12 August 2011 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

mosfet SMD MARKING CODE 352

Contextual Info: PMGD130UN 20 V, dual N-channel Trench MOSFET Rev. 1 — 1 June 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

BSS84AKS.115

Abstract: BSS84AKS TSSOP6 package
Contextual Info: TS SO P6 BSS84AKS 50 V, 160 mA dual P-channel Trench MOSFET Rev. 1 — 23 May 2011 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) package using Trench MOSFET technology.

DIODE smd marking pl

Abstract: mosfet SMD MARKING CODE 352
Contextual Info: PMGD175XN 30 V, dual N-channel Trench MOSFET Rev. 1 — 1 June 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

marking code ya SMD Transistor

Abstract: nxp sot363 MARKING 16
Contextual Info: TS SO P6 PMG85XP 20 V, 2 A P-channel Trench MOSFET Rev. 1 — 28 June 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench

BSS84AKS

Contextual Info: TS SO P6 BSS84AKS 50 V, 160 mA dual P-channel Trench MOSFET Rev. 1 — 23 May 2011 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) package using Trench MOSFET technology.

Contextual Info: NX3020NAKS 30 V, 180 mA dual N-channel Trench MOSFET 11 November 2013 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

Contextual Info: BSS138BKS 60 V, 320 mA dual N-channel Trench MOSFET Rev. 1 — 12 August 2011 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

Contextual Info: BSS138BKS 60 V, 320 mA dual N-channel Trench MOSFET Rev. 1 — 12 August 2011 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

smd diode marking A3 sot363

Abstract: sot363 aaa
Contextual Info: BAT754L Schottky barrier triple diode 22 November 2012 Product data sheet 1. Product profile 1.1 General description Three internal isolated planar Schottky barrier diodes with an integrated guard ring for stress protection,encapsulated in very small SOT363 Surface-Mounted Device SMD

TSSOP-6

Abstract: SOT128 SOD87 UMT6 umt5 1E1A SCD79 SOT54A SO16 package SOT54
Contextual Info: Philips Semiconductors Small-signal transistors and diodes Package titles PACKAGE TITLES To view the complete range of package outline drawings covering all devices shown in this book refer to either: • Data handbook SC18, Discrete Semiconductor Packages, ordering code 9397 750 05011

TSSOP-6

Abstract: marking 34 TSSOP6 NXP smd marking Yd
Contextual Info: PMGD290UCEA 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET 18 April 2013 Product data sheet 1. General description Complementary N/P-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET

IRLML6402TRPBF

Abstract: IRF7404TRPB TSSOP-6 IRLML6302TRPBF IRF7240TRPBF IRLML6401TRPBF TSSOP6 package IRFR5305PBF IRF5210STRLPBF irf7416trpbf
Contextual Info: 1964-2012:QuarkCatalogTempNew 9/18/12 3:26 PM Page 1964 Power MOSFETs Power MOSFETs, P Channel RoHS SO-8 D2-PAK TSSOP-6 ENCLOSURES INTERCONNECT TEST & MEASUREMENT 25 AUTOMATION & CONTROL POWER TO-220AB I-PAK P Channel, –40 Volt VDSS P Channel, –12 Volt VDSS

Contextual Info: PMGD290UCEA 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET 28 March 2014 Product data sheet 1. General description Complementary N/P-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET

k1 nxp

Contextual Info: BAT74S Dual Schottky barrier diode 22 November 2012 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier dual diode with an integrated guard ring for stress protection. Two electrically isolated Schootky barrier diodes encapsulated in a very small SOT363

IRLML2502TRPBF

Abstract: IRLML2803TRPBF IRLML2402TRPBF IRF7821TRPBF IRF7413ZTR irf740 irfp4004 IRF7805ZTRPBF IRFR3709ZTRPBF irlr7843tr
Contextual Info: 1965-2012:QuarkCatalogTempNew 9/18/12 3:28 PM Page 1965 25 Power MOSFETs RoHS TEST & MEASUREMENT N Channel Power MOSFETs INTERCONNECT TO-220AB D2-PAK SO-8 N Channel, 30 Volt VDSS Gate Drive Package EACH Stock No. Mfr.’s Type VGS V ID (A) Power (W) RDS(on)

TSSOP6 package

Abstract: GTT3434 TSSOP-6 61a3
Contextual Info: Pb Free Plating Product ISSUED DATE :2006/10/31 REVISED DATE : GTT3434 BVDSS RDS ON ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 30V 34m 6.1A Description The GTT3434 uses advanced trench technology to provide excellent on-resistance and low gate charge. The TSSOP-6 package is universally used for all commercial-industrial surface mount applications.

8205S

Abstract: 8205s mosfet STT8205S TSSOP-6 TSSOP6 package 8205* MOSFET
Contextual Info: STT8205S 6 A, 20V,RDS ON 28mΩ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The STT8205S provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. The TSSOP-6 package is universally used for all commercialindustrial surface mount applications.