TSOPII54P4000 Search Results

Contextual Info: Pr E2G1050-17-X1 el im y 4-Bank ¥ 4,194,304-Word ¥ 4-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MD56V62400/H is a 4-bank ¥ 4,194,304-word ¥ 4-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and

D56V62160

Abstract: BA RX transistor d56v621 3tr5
Contextual Info: O K I Semiconductor MD56V62160/H 4-Bank x 1,048,576-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM D E SCRIPTIO N T he M D 5 6 V 6 2 1 6 0 /H is a 4 -b a n k x 1,048,576-w ord x 16-bit sy n c h ro n o u s d y n a m ic R A M , fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs

active suspension

Abstract: MD56V62800A
Contextual Info: Pr E2G1054-18-62 el im y 4-Bank ¥ 2,097,152-Word ¥ 8-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MD56V62800A is a 4-bank ¥ 2,097,152-word ¥ 8-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and

MD56V62160

Contextual Info: Pr E2G1052-17-X1 el im y 4-Bank ¥ 1,048,576-Word ¥ 16-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MD56V62160/H is a 4-bank ¥ 1,048,576-word ¥ 16-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs

TC59SM816

Contextual Info: TC59SM816/08/04BFT/BFTL-70,-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDS x 4 BANKS × 16-BITS SYNCHRONOUS DYNAMIC RAM 8,388,608-WORDS × 4 BANKS × 8-BITS SYNCHRONOUS DYNAMIC RAM 16,777,216-WORDS × 4 BANKS × 4-BITS SYNCHRONOUS DYNAMIC RAM

133M

Abstract: TC59SM816 TC59SM816CFTI-75
Contextual Info: TC59SM816CFTI-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDS x 4 BANKS × 16-BITS SYNCHRONOUS DYNAMIC RAM DESCRIPTION TC59SM816CFTI is a CMOS synchronous dynamic random access memory organized as 4,194,304-words × 4

MD56V62400

Abstract: MD56V62400H TSOPII54
Contextual Info: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株

active suspension

Abstract: MD56V62800A
Contextual Info: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.

MD56V62160

Abstract: MD56V62160H TSOPII54
Contextual Info: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株

Contextual Info: TC59SM716/08/04AS/ASL-70,-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 2,097,152-WORDS x 4 BANKS × 16-BITS SYNCHRONOUS DYNAMIC RAM 4,194,304-WORDS × 4 BANKS × 8-BITS SYNCHRONOUS DYNAMIC RAM 8,388,608-WORDS × 4 BANKS × 4-BITS SYNCHRONOUS DYNAMIC RAM

Contextual Info: TSOPII54-P-400-0.80-K Unit in millimeters typ., unless otherwise specified. Semiconductor Please consult OKI for soldering, assembly and storage recommendations. Specification are subject to change without notice. The drawings do not substitute or replace a product’s datasheet or the Package Information Databook.

MD56V62800

Contextual Info: Pr E2G1051-17-X1 el im y 4-Bank ¥ 2,097,152-Word ¥ 8-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MD56V62800/H is a 4-bank ¥ 2,097,152-word ¥ 8-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and

133M

Abstract: TC59SM716 TC59SM716AFTI-75
Contextual Info: TC59SM716AFTI-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 2,097,152-WORDS x 4 BANKS × 16-BITS SYNCHRONOUS DYNAMIC RAM DESCRIPTION TC59SM716AFTI is a CMOS synchronous dynamic random access memory organized as 2,097,152-words × 4

TC59SM816

Contextual Info: TC59SM816/08/04BFT/BFTL-70,-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDS x 4 BANKS × 16-BITS SYNCHRONOUS DYNAMIC RAM 8,388,608-WORDS × 4 BANKS × 8-BITS SYNCHRONOUS DYNAMIC RAM 16,777,216-WORDS × 4 BANKS × 4-BITS SYNCHRONOUS DYNAMIC RAM

MD56V62800

Abstract: MD56V62800H TSOPII54
Contextual Info: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株

QSJ-50074

Abstract: QSJ-44403 QFJ28-P-S450-1 QSJ-44574 SSOP60-P-700-0 SSOP30-P-56-0 SOP8-P-250-1 QSJ52627 sop44-p-600-1.27-k QFJ20
Contextual Info: 7.包装 7. 包装 7-1. 包装形態 - 2 7-1-1. 通常包装 - 2 7-1-2. 防湿包装 - 3 7-2. 個装仕様 - 4

TC59SM816

Abstract: TSOPII54 04CFT
Contextual Info: TC59SM816/08/04CFT/CFTL-70,-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDS x 4 BANKS × 16-BITS SYNCHRONOUS DYNAMIC RAM 8,388,608-WORDS × 4 BANKS × 8-BITS SYNCHRONOUS DYNAMIC RAM 16,777,216-WORDS × 4 BANKS × 4-BITS SYNCHRONOUS DYNAMIC RAM

active suspension

Contextual Info: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.

TSOPII54

Contextual Info: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株

2DQ11

Abstract: TSOPII54 MSM56V64800
Contextual Info: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株

TC59SM816

Contextual Info: TC59SM816/08/04CFT/CFTL-70,-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDS x 4 BANKS × 16-BITS SYNCHRONOUS DYNAMIC RAM 8,388,608-WORDS × 4 BANKS × 8-BITS SYNCHRONOUS DYNAMIC RAM 16,777,216-WORDS × 4 BANKS × 4-BITS SYNCHRONOUS DYNAMIC RAM

Contextual Info: O K I Semiconductor E2G1052-17-X1 M D 5 6 V 6 2 1 6 0 /H 4-Bank x 1,048,576-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The M D 56V 62160/H is a 4-bank x 1,048,576-w ord x 16-bit synchronous dynam ic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs

BA0413

Contextual Info: J2G1051-17-X1 作成：1998年 3月 ¡ 電子デバイス MD56V62800/H l MD56V62800/H 暫定 4-Bankx2,097,152-Word×8-Bit SYNCHRONOUS DYNAMIC RAM n 概要

Contextual Info: TC59SM816/08/04BFT/BFTL-70,-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDS x 4 BANKS × 16-BITS SYNCHRONOUS DYNAMIC RAM 8,388,608-WORDS × 4 BANKS × 8-BITS SYNCHRONOUS DYNAMIC RAM 16,777,216-WORDS × 4 BANKS × 4-BITS SYNCHRONOUS DYNAMIC RAM