TSOP 1138 Search Results

TSOP 1138

Abstract: BG560 CS144 CS48 PC44 PC84 SO20 VQ44 HQ10 CB228
Contextual Info: Package Drawings February 2, 1999 Version 1.3 11 R Package Drawings Ceramic DIP Package - DD8 11-24 February 2, 1999 (Version 1.3) R Package Drawings Plastic DIP Package - PD8 11 February 2, 1999 (Version 1.3) 11-25 R Package Drawings SOIC and TSOP Packages - SO8, VO8

CC44

Abstract: packages
Contextual Info: Package Drawings February 2, 1999 Version 1.3 11 R Package Drawings Ceramic DIP Package - DD8 11-24 February 2, 1999 (Version 1.3) R Package Drawings Plastic DIP Package - PD8 11 February 2, 1999 (Version 1.3) 11-25 R Package Drawings SOIC and TSOP Packages - SO8, VO8

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT MC-42S4000LAC32S SERIES 4 M-WORD BY 32-BIT DYNAMIC RAM MODULE SO DIMM FAST PAGE MODE Description The MC-42S4000LAC32S series is a 4,194,304 words by 32 bits dynamic RAM module (Small Outline DIMM) on which 8 pieces of 16 M DRAM: /iPD42S17400LG3 (TSOP (II) are assembled.

old nec tv diagram

Abstract: old nec 14" tv diagram
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT MC-42S4000LAC32S SERIES 4 M-WORD BY 32-BIT DYNAMIC RAM MODULE SO DIMM FAST PAGE MODE Description The MC-42S4000LAC32S series is a 4,194,304 words by 32 bits dynam ic RAM m odule (Small O utline DIMM) on w hich 8 pieces of 16 M DRAM: ¿IPD42S17400LG3 (TSOP (II) are assembled.

AN1064

Abstract: CY62167E CY62167 48TSOP-I
Contextual Info: CY62167E MoBL 16-Mbit 1 M x 16 / 2 M × 8 Static RAM 16-Mbit (1M × 16 / 2M × 8) Static RAM Features • Configurable as 1 M × 16 or as 2 M × 8 SRAM ■ Very high speed: 45 ns ■ Wide voltage range: 4.5 V to 5.5 V ■ Ultra low standby power ❐ Typical standby current: 1.5 µA

Contextual Info: CY62168EV30 MoBL 16-Mbit 2 M x 8 Static RAM 16-Mbit (2 M × 8) Static RAM Features automatic power-down feature that significantly reduces power consumption by 90% when addresses are not toggling. Placing the device into standby mode reduces power consumption by

48TSOPI

Contextual Info: CY62167E MoBL 16-Mbit 1 M x 16 / 2 M × 8 Static RAM 16-Mbit (1 M × 16 / 2 M × 8) Static RAM Features • Configurable as 1 M × 16 or as 2 M × 8 SRAM ■ Very high speed: 45 ns ■ Wide voltage range: 4.5 V to 5.5 V ■ Ultra low standby power ❐ Typical standby current: 1.5 µA

Contextual Info: CY62167E MoBL 16-Mbit 1 M x 16 / 2 M × 8 Static RAM 16-Mbit (1 M × 16 / 2 M × 8) Static RAM Features • Configurable as 1 M × 16 or as 2 M × 8 SRAM ■ Very high speed: 45 ns ■ Wide voltage range: 4.5 V to 5.5 V ■ Ultra low standby power ❐ Typical standby current: 1.5 µA

Contextual Info: CY62167E MoBL 16-Mbit 1 M x 16 / 2 M × 8 Static RAM 16-Mbit (1 M × 16 / 2 M × 8) Static RAM Features • Configurable as 1 M × 16 or as 2 M × 8 SRAM ■ Very high speed: 45 ns ■ Wide voltage range: 4.5 V to 5.5 V ■ Ultra low standby power ❐ Typical standby current: 1.5 µA

Contextual Info: CY62167E MoBL 16-Mbit 1 M x 16 / 2 M × 8 Static RAM 16-Mbit (1 M × 16 / 2 M × 8) Static RAM Features • Configurable as 1 M × 16 or as 2 M × 8 SRAM ■ Very high speed: 45 ns ■ Wide voltage range: 4.5 V to 5.5 V ■ Ultra low standby power ❐ Typical standby current: 1.5 µA

AN1064

Abstract: CY62167E 1M x 16 SRAM
Contextual Info: CY62167E MoBL 16-Mbit 1M x 16 / 2M x 8 Static RAM Features • • • • (CE1 HIGH, or CE2 LOW, or both BHE and BLE are HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance state when: • The device is deselected (CE1 HIGH or CE2 LOW)

AN1064

Abstract: CY62167E
Contextual Info: CY62167E MoBL 16-Mbit 1M x 16 / 2M x 8 Static RAM Features • • • • (CE1 HIGH, or CE2 LOW, or both BHE and BLE are HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance state when: • The device is deselected (CE1 HIGH or CE2 LOW)

TGS 203

Contextual Info: blE » • 4 4 cl t j 2 ü 3 D022flflfl Tfi3 H M 5 1 4 1 O O A /A L /A S L S e rie s — 4,194,304-wordx1-bit Dynamic RAM HITACHI/ The H itachi HM 514100A/AL/ASL is a CMOS dynamic RAM organized 4,194,304-word x 1-bit. HM514100A/AL/ASL has realized higher density,

Contextual Info: CY62168EV30 MoBL 16-Mbit 2 M x 8 Static RAM 16-Mbit (2 M × 8) Static RAM Features automatic power-down feature that significantly reduces power consumption by 90% when addresses are not toggling. Placing the device into standby mode reduces power consumption by

CY62167EV30

Abstract: AN1064 CY62168EV30 CY62168EV30LL-45BVXI
Contextual Info: CY62168EV30 MoBL 16-Mbit 2 M x 8 Static RAM 16-Mbit(2M x 8) Static RAM Features automatic power-down feature that significantly reduces power consumption by 90% when addresses are not toggling. Placing the device into standby mode reduces power consumption by

Contextual Info: CY62168EV30 MoBL 16-Mbit 2 M x 8 Static RAM 16-Mbit (2 M × 8) Static RAM Features automatic power-down feature that significantly reduces power consumption by 90% when addresses are not toggling. Placing the device into standby mode reduces power consumption by

Contextual Info: CY62168EV30 MoBL 16-Mbit 2 M x 8 Static RAM 16-Mbit (2 M × 8) Static RAM Features automatic power-down feature that significantly reduces power consumption by 90% when addresses are not toggling. Placing the device into standby mode reduces power consumption by

cypress AN1064 sram system guidelines

Abstract: AN1064 CY62167EV30 CY62168EV30 CY62168EV30LL-45BVXI
Contextual Info: CY62168EV30 MoBL 16-Mbit 2M x 8 Static RAM Features toggling. Placing the device into standby mode reduces power consumption by more than 99% when deselected (Chip Enable 1 (CE1) HIGH or Chip Enable 2 (CE2) LOW). The input and output pins (IO0 through IO7) are placed in a high

AN1064

Abstract: CY62167EV30 CY62168EV30 CY62168EV30LL-45BVXI
Contextual Info: CY62168EV30 MoBL 16-Mbit 2M x 8 Static RAM Features toggling. Placing the device into standby mode reduces power consumption by more than 99% when deselected (Chip Enable 1 (CE1) HIGH or Chip Enable 2 (CE2) LOW). The input and output pins (IO0 through IO7) are placed in a high

uPD3599

Abstract: transistor nec 2SK2396 MOS FET BUZ 444 MC-7643 nec 3S4M 4305 regulator nec RD2.4S equivalent 2SC4305 NEC 2sA1441 nec NPN transistor SST 117
Contextual Info: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Seimi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 April 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of

EPROM retention bake

Contextual Info: M 1998 Semi-Annual Reliability Report compiled 10/98 INTRODUCTION RELIABILITY CONTROL SYSTEM Quality Comes First By adhering to this guiding value, Microchip Technology Inc. has achieved competitive leadership in quality and reliability for its products. Demonstrated performance

Contextual Info: M 1998 Semi-Annual Reliability Report compiled 10/98 INTRODUCTION RELIABILITY CONTROL SYSTEM Quality Comes First By adhering to this guiding value, Microchip Technology Inc. has achieved competitive leadership in quality and reliability for its products. Demonstrated performance

lg crt monitor circuit diagram

Abstract: micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY
Contextual Info: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 October 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of

km416v1200at

Abstract: KM416V1200aj KM416V1200A
Contextual Info: KM416V1200A/A-L/A-F CMOS DRAM 1M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416V1200A/A-L/A-F is a CMOS high speed 1,048,576 b it x 16 Dynamic Random Access Memory. Its design is optimized for high performance