TSOIC Search Results

SMD-5962-89696

Contextual Info: Tem ic Semiconductors 64 K x 1 High Speed CMOS SRAM HM 65787 Short description. Please refer to the full datasheet available on TEMIC web for detailed technical information. Introduction The HM 65787 is a high speed CMOS static RAM organized as 65536 x 1 bit. It is manufactured using

Contextual Info: Tem ic HM 65790 MATRA MHS 16 K X 4 High Speed CMOS SRAM Separate I/O Introduction The HM 65790 is a high speed CMOS static RAM organized as 16384 x 4 bits. It is manufactured using MHS’s high performance CMOS technology. Access times as fast as 15 ns are available with maximum

Contextual Info: T em ic HM 65767B MATRA MHS 16 K X 1 High Speed CMOS SRAM Introduction The HM 65767B is a high speed CMOS static RAM organized as 16384x1 bit. It is manufactured using MHS’s high performance CMOS technology. All inputs and outputs of the HM 65767B are TIL

Contextual Info: Tem ic HM 65756 MATRA MHS 32 K x 8 High Speed CMOS SRAM Introduction The HM 65756 is a high speed CMOS static RAM organised as 32,768 x 8 bits. It is manufactured using MHS’s high performance CMOS technology. Easy memory expansion is provided by an active low chip

SiI3811

Abstract: AE1421 Mitsubishi DA U31 sc2625 NTC SD-15 DELL DA-2 power supply diagram SSLVC08APWR-GP Wistron Corporation ST470U2D5VDM ICS954226AGLF
Contextual Info: Barbados Block Diagram Intel Mobile CPU Clock Generator ICS954226 /CV140PAG 3 Dothan: 1.6BGHz/1.73GHz 1.87GHz/2AGHz/2.1GHz Celeron:1.4GHz/1.5GHz/1.6GHz 4,5 Project code:91.4C401.001 PCB P/N :04242 REVISION :SD System DC/DC 400 /533MHz 4.3GB/s HOST BUS 200-PIN DDR2 SODIMM

TSOIC

Abstract: 283V XCR22LV10 XCR22V10 PLD-30
Contextual Info: XCR22V10: 5V Zero Power, TotalCMOS, Universal PLD Device R DS048 v1.1 February 10, 2000 0* Product Specification Features Description • Industry's first TotalCMOS SPLD - both CMOS design and process technologies Fast Zero Power (FZP™) design technique provides

xilinx spld

Abstract: XCR22LV10 XCR22V10 PLD-30
Contextual Info: This product has been discontinued. Please see www.xilinx.com/partinfo/notify/pdn0007.htm for details. XCR22LV10: 3V Zero Power, TotalCMOS, Universal PLD Device R DS047 v1.2 October 9, 2000 0* Product Specification Features Description • The XCR22LV10 is the first SPLD to combine high performance with low power, without the need for "turbo bits" or

LA 5756

Abstract: MATRA MHS HM* 28 pins SOIC pack j32-1
Contextual Info: T e m ic MATRA MHS_ HM 65756 32 K x 8 High Speed CMOS SRAM Introduction The HM 65756 is a high speed CMOS static RAM organised as 32,768 x 8 bits. It is manufactured using MHS’s high performance CMOS technology. Easy memory expansion is provided by an active low chip

hm65789

Contextual Info: Tem ic HM 65789 S emi co ndu ct or s 16 K X 4 High Speed CMOS SRAM with Output Enable Short description. Please refer to the full datasheet available on TEMIC web for detailed technical information. Introduction The HM 65789 is a high speed CMOS static RAM

Contextual Info: Tem ic HM 65787 MATRA MHS 64 K X 1 High Speed CMOS SRAM Introduction The HM 65787 is a high speed CMOS static RAM organized as 65536 x 1 bit. It is manufactured using MHS’s high performance CMOS technology. Access times as fast as 15 ns are available with maximum

MATRA MHS HM

Contextual Info: T em ic HM 65797 MATRA MHS 256 K X 1 High Speed CMOS SRAM Introduction The HM 65797 is a high speed CMOS static RAM organized as 262, 144 x 1 bit. It is manufactured using MHS high performance CMOS technology. Easy memory expansion is provided by an active low chip

bwf cs 30

Abstract: 9N92 HM65789 5789
Contextual Info: Tem ic HM 65789 MATRA MHS 16 K x 4 High Speed CMOS SRAM with Output Enable Introduction The HM 65789 is a high speed CMOS static RAM organized as 16384 x 4 bits. It is manufactured using MHS’s high performance CMOS technology. Access times as fast as 15 ns are available with maximum

Contextual Info: Tem ic HM 65787 MATRA MHS 64 K X 1 High Speed CMOS SRAM Introduction The HM 65787 is a high speed CMOS static RAM organized as 65536 x 1 bit. It is manufactured using MHS’s high performance CMOS technology. Access times as fast as 15 ns are available with maximum

47AB

Abstract: SCD1U16V3KX BCB25 BC536 BC163 216t9 sis645dx foxconn WISTRON BC466
Contextual Info: CLK GEN TOUCAN2 DesKtop-CPU Northwood 2.2~3.06GHz ICS:ICS952004AG DDRBUF:ICS93732 3,4 5,6 VRAM*2 FSB 533/400MHz K4D263238M-QC40 CRT 17 2.5V 200MHz/266MHz DDR * 2 11,12,13 SiS962 24 CD-ROM AGP 4X W/RTC 15" MII LAN MAC PHY 20,21,22,23 1394 conn. Agere FW802A

SiI3811

Abstract: TPS2231 G313 D14-230 marvell 88SA8040 Wistron Corporation R5C832 SSC95 6N-30 ICS954226AGLF
Contextual Info: Intel Mobile CPU Barbados Block Diagram Dothan: 1.6BGHz/1.73GHz 1.87GHz/2AGHz/2.1GHz Celeron:1.4GHz/1.5GHz/1.6GHz Clock Generator ICS954226/CV140PAG 3 4,5 Project code:91.4C401.001 PCB P/N :04242 REVISION :SD System DC/DC 400/533MHz 4.3GB/s HOST BUS 200-PIN DDR2 SODIMM

MOLEX-53261-2

Abstract: bridge 45 b 50 20 c1v BC417 travelmate M1621 bc349 asus M24CO2 K0029 BC148 pin configuration BC357
Contextual Info: TRAVELMATE 340 9/14/99 +3.3V +3.3V +3.3V SB_SMI# 99203SC 48.40F01.011 1 4 SB_STPCLK# U75A 1 4 SCD1U16V 1 2 3 7 RN68 BC493 U75B 4 5 CC_SMI# 6 7 TSLCX125 +3.3V 6 SB_NMI 6 SB_SMI# 6 SB_INTR 6 SB_FERR# SB_NMI SB_SMI# SB_INTR SB_FERR# 1 2 3 4 SB_A20M# SB_STPCLK#

00A75

Abstract: NM29A040M NM29A040V NM29A080M V28A
Contextual Info: NM29A040/080 National Semiconductor NM29A040/080 4-Mbit/8-Mbit CMOS Serial FLASH E2PROM General Description Features The NM29A040/080 are 4-Mbit and 8-Mbit Flash memories designed with a MICROWIRE tm serial interface. All of the features of the device are designed to provide the most cost

PIC16F73 inverter circuit diagram

Abstract: BC820 bc816 AGERE 1394 intel g31 motherboard SCD1U50V5KX 02217-SB foxconn Wistron Corporation Intel p45 motherboard
Contextual Info: A B C D E Pelican Block Diagram SB 4 Mobile CPU 3 HOST BUS G768D MCH Brookdale-GL 266MHz 10, 11 DVO 7,8,9 INT.MIC HUB I/F CRT CONN Chrontel 7019 12 66MHz LVDS MIC IN SYSTEM DC/DC MAX1715 INPUTS OUTPUTS DCBATOUT +VCC_CORE 23 2D5V_S3 1D5V_S0 CM8500 +VID 13 1.2V

27m21

Abstract: SC15311 27m21 ic U106D SC162A BC839 27m21 PIN DIAGRAM WISTRON foxconn Wistron Corporation
Contextual Info: CLK GEN H2V/H3V Desktop-CPU Northwood 0.13u 2.0G~2.4G ICS:ICS952004AG DDRBUF:ICS93722 5,6 3,4 CRT GTL+ 100MHz/133MHz VGA R/G/B 2.5V• 266MHz DDR * 2 SiSM650 11,12,13 Dual LVDS SiS962 21 Secondary EIDE USB 2.0 962 only W/RTC 14 14.1"/15" 16 1394 1394 MAC 962 only

TSOIC

Abstract: XCR22LV10 XCR22V10 PLD-30
Contextual Info: XCR22LV10: 3V Zero Power, TotalCMOS, Universal PLD Device R DS047 v1.1 February 10, 2000 0* Product Specification Features Description • The XCR22LV10 is the first SPLD to combine high performance with low power, without the need for "turbo bits" or other power down schemes. To achieve this, Xilinx has

t 16 k

Abstract: F01011
Contextual Info: Tem ic HM 65767B MATRA MHS 16 K X 1 High Speed CMOS SRAM Introduction The HM 65767B is a high speed CMOS static RAM organized as 16384x1 bit. It is manufactured using MHS’s high performance CMOS technology. Access times as fast as 25 ns are available with maximum

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPC962305 Product Preview Low-Cost 3.3 V Zero Delay Buffer The MPC962309 is a zero delay buffer designed to distribute high-speed clocks. Available in a 16-pin SOIC or TSSOP package, the device accepts one

F16 - 100 HIP

Abstract: 65664A
Contextual Info: Tem ic HM 65664A S e m i c o n d u c t o r s 8 K X 8 Very Low Power CMOS SRAM Introduction The HM 65664A is a very low pow er CM O S static RAM organized as 8192 x 8 bit. It is m anufactured using the TEM IC high perform ance CM O S technology nam ed super CM OS.

Contextual Info: Tem ic HM 65799 MATRA MHS 64 K X 4 with OE High Speed CMOS SRAM Introduction The HM 65799 is a high speed CMOS static RAM organized as 65,536 x 4 bit. It is manufactured using MHS high performance CMOS technology. Easy memory expansion is provided by two active low