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    TSM1N45D Search Results

    TSM1N45D Datasheets (2)

    Taiwan Semiconductor
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    TSM1N45DCS RL
    Taiwan Semiconductor MOSFET N-CHANNEL Original PDF 123.98KB 6
    TSM1N45DCS RLG
    Taiwan Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 450V 500MA 8SOP Original PDF 444.52KB

    TSM1N45D Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Preliminary TSM1N45D 450V N-Channel Power MOSFET SOP-8 Pin Definition: 1. Source 1 2. Gate 1 3. Source 2 4. Gate 2 PRODUCT SUMMARY 8. Drain 1 7. Drain 1 6. Drain 2 5. Drain 2 VDS V RDS(on)(Ω) ID (A) 450 4.25 @ VGS =10V 0.25 General Description The TSM1N45 is N-Channel enhancement mode power field effect transistors are produced using planar DMOS


    Original
    tsm1n45dtsm1n45 PDF

    Contextual Info: Preliminary TSM1N45D 450V N-Channel Power MOSFET SOP-8 Pin Definition: 1. Source 1 2. Gate 1 3. Source 2 4. Gate 2 PRODUCT SUMMARY 8. Drain 1 7. Drain 1 6. Drain 2 5. Drain 2 VDS V RDS(on)(Ω) ID (A) 450 4.25 @ VGS =10V 0.25 General Description The TSM1N45 is N-Channel enhancement mode power field effect transistors are produced using planar DMOS


    Original
    tsm1n45dtsm1n45 PDF

    Dual N-Channel MOSFET SOP8

    Abstract: n-channel mosfet transistor 27BSC
    Contextual Info: Preliminary TSM1N45D 450V N-Channel Power MOSFET SOP-8 PRODUCT SUMMARY Pin Definition: 1. Source 1 2. Gate 1 3. Source 2 4. Gate 2 8. Drain 1 7. Drain 1 6. Drain 2 5. Drain 2 VDS V RDS(on)(Ω) ID (A) 450 4.25 @ VGS =10V 0.25 General Description The TSM1N45 is N-Channel enhancement mode power field effect transistors are produced using planar DMOS


    Original
    tsm1n45dtsm1n45dual n-channel mosfet sop8n-channel mosfet transistor+127bsc PDF

    N-Channel

    Abstract: A12 diode
    Contextual Info: TSM1N45D 450V N-Channel Power MOSFET SOP-8 Pin Definition: 1. Source 1 2. Gate 1 3. Source 2 4. Gate 2 PRODUCT SUMMARY 8. Drain 1 7. Drain 1 6. Drain 2 5. Drain 2 VDS V RDS(on)(mΩ) ID (A) 450 4.25 @ VGS =10V 0.5 General Description The TSM1N45 is N-Channel enhancement mode power field effect transistors are produced using planar DMOS


    Original
    tsm1n45dtsm1n45n-channela12 diode PDF