TSHA6500 Search Results
TSHA6500 Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| TSHA6500 | Vishay Semiconductors | Infrared, UV, Visible Emitters, Optoelectronics, IR EMITTER HIGH EFF. 870NM 5MM 2 | Original | 5 | |||
| TSHA6500 | Vishay Telefunken | GaAlAs Infrared Emitting Diodes in Deg 5 mm (T-1 3-4) Package | Original | 89.16KB | 6 |
TSHA6500 Price and Stock
Vishay Intertechnologies TSHA6500870 NM, GAALAS DOUBLE HETERO HIGH SPEED INFRARED EMITTING DIODE Infrared LED, 5mm, 1-Element, 875nm |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TSHA6500 | 12,000 |
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Get Quote | |||||||
TSHA6500 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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TSHA6500Contextual Info: TSHA6500 Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 875 nm • High reliability • Angle of half intensity: ϕ = ± 24° • Low forward voltage |
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tsha65002002/95/ec2002/96/ec18-jul-08 | |
TSHA6501
Abstract: TSHA6503 TSHA6500
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tsha6500tsha6501tsha6502tsha6503+4 | |
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Contextual Info: TSHA6500 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: p = 875 nm • High reliability • Angle of half intensity: = ± 24° |
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tsha65002002/96/ec200/95/ec11-mar-11 | |
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Contextual Info: TSHA6500 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: p = 875 nm • High reliability • Angle of half intensity: = ± 24° |
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tsha65002002/96/ec200/95/ec2002/95/ec+3 | |
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Contextual Info: TSHA6500 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: p = 875 nm • High reliability • Angle of half intensity: = ± 24° |
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tsha65002002/96/ec200/95/ec2011/65/eu+2 | |
TSHA6503
Abstract: TSHA650 TSHA6500 TSHA6501 TSHA6502
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tsha6500tsha6501tsha6502tsha6503+4 | |
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Contextual Info: TSHA650. Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description The TSHA650. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about |
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tsha650tsha55018-jul-08 | |
TSHA550
Abstract: TSHA650 TSHA6500 TSHA6501 TSHA6502 TSHA6503
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tsha650tsha550d-7402520-may-99+4 | |
A 69157 scr
Abstract: 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3
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90f8548sdp8600-00195f5325sdp8371-001+16 | |
TSHA550
Abstract: TSHA650 TSHA6500 TSHA6501 TSHA6502 TSHA6503
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tsha650tsha550d-7402520-may-99+4 | |
TSHA550
Abstract: TSHA650 TSHA6500 TSHA6501 TSHA6502 TSHA6503
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tsha650tsha550d-7402520-may-99+4 | |
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Contextual Info: TSHA650. VISHAY Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description The TSHA650. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. |
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tsha650tsha550d-7402511-may-04 | |
CQX48B
Abstract: IR Emitters "IR Emitters"
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cqy36ncqy37ntsus4400cqx48b+7 | |
ic 8746Contextual Info: Tem ic TSHA 650 Semiconductors GaAlAs Infrared Emitting Diodes in 05 mm T -l3/4 Package Description The TSHA 650. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, m olded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature aboiit 70 % |
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tsha550d-7402515-jul-96ic 8746 | |
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TSHA550
Abstract: TSHA650 TSHA6500 TSHA6501 TSHA6502 TSHA6503
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tsha650tsha550d-7402520-may-99+4 | |
TSHA550
Abstract: TSHA6500 TSHA6501 TSHA6502 TSHA6503 phototransistor
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tsha550d-7402515-jul-96tsha6500+4 | |
diode SR 360
Abstract: IEC 62471 60825-1 IEC-60825 diode sr 60 IEC62471 DIN 875 VSLB3940X01 IEC 60825-1 diode SR 360 datasheet
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11-sep-08diode sr 360iec 6247160825-1+7 | |
TSUS3400
Abstract: VCNL4000 VISHAY VSLB3940 DATASHEET smartphone proximity sensor TEMT6200FX01 BPW41N infrared emitters and detectors TCND5000 TCRT1010 TEMD6010FX01
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vmn-sg2123-1010tsus3400vcnl4000vishay vslb3940 datasheet+7 | |
APPLICATION CIRCUIT OF TSAL4400
Abstract: TSAL6400 TSAL6100 TSHF5200 TSTS7102 CQX48B CQY36N CQY37N tsta7500 TSAL4400
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conta80089tshf5400tsmf1000tsmf3700+16 | |
led 7 segment anode TIL 702
Abstract: trw 007 diodes TDDG 5250 m 817 optron telefunken transistor opto smd code marking NEC TDDG 5250 hoa 865 DIODE PK IN 5401 7segment sm 4150
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10x10led 7 segment anode til 702trw 007 diodestddg 5250 m+7 | |
A 69157 scr
Abstract: HCPL 1458 TRANSISTOR SMD 431H SMPS 666 VER 2.3 SMPS 666 VER 2.1 acsl 086 s LHi 878 2057 LED dot matrix display 5x7 smd ic A9A 42-M41
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74k514574k514474k514674k5147+16 | |
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Contextual Info: TEMIC TSHA 650. S e m i c o n d u c t o r s Ga Al As Infrared Emitting Diodes in 05 mm T -l 3A Package Description The TSHA 650. series are high efficiency infrared emit ting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. |
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tsha550d-7402515-jul-96 | |
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Contextual Info: TSHA650. Vishay Telefunken GaAlAs Infrared Emitting Diodes in ø 5 mm T–1¾ Package Description 94 8389 The TSHA650. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs |
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tsha650tsha550d-7402520-may-99 | |
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Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS Emitters, Detectors, Sensors Infrared Emitters, Photo Detectors, and Optical Sensors Infrared Emitters PIN Photo Diodes Phototransistors Reflective Sensors – Analog Tr a n s m i s s i v e S e n s o r s – A n a l o g |
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vcnl4020x01vcnl3020aec-q101vcnl4010+2 | |