TSF2 Search Results

smd 2440

Contextual Info: Flexibility & Innovation …. DS0383V .02 15.07.02 DATA S HEET TSF2441-01 2441.5MHZ SAW FILTER PRELIMINARY SPECIFICATION PROPOSAL PACKAGE 3X3 MM SMD PRODUCT F EATURES : Ø LOW LOSS 1.25±0.25 Ø HIGH R EJECTIONS Ø SMALL SMD PACKAGE CONTACT : 1.50±0.15

Contextual Info: TSF20H150C creat by ART Taiwan Semiconductor FEATURES Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency

Contextual Info: TSF20H120C creat by ART Taiwan Semiconductor FEATURES Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency

Contextual Info: TSF2080C creat by ART Taiwan Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability

Contextual Info: TSF20U45C thru TSF20U60C creat by ART Taiwan Semiconductor FEATURES Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability

Contextual Info: TSF20U100C Taiwan Semiconductor Dual High-Voltage Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and

Contextual Info: TSF20U45C thru TSF20U60C creat by ART Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability

ASEA motor

Contextual Info: MOTOROLA O rder this docum ent by M TSF2P02HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M T S F 2P 02H D Medium Power Surface Mount Products Motorola Preferred Device TMOS Single P-Channel Field Effect Transistor Micro8™ devices are an advanced series of power MOSFETs

Contextual Info: TSF20U45C thru TSF20U60C creat by ART Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability

Contextual Info: TSF20H120C creat by ART Taiwan Semiconductor FEATURES Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency

TSF*1303

Abstract: TSF434A TSF240 TSF-46 TSF1365
Contextual Info: SAW FILTERS RF FILTERS Part Number Part Number TSF210A TSF218A TSF220A TSF224A TSF280A TSF285A TSF311A TSF315A TSF320A TSF322A TSF326A TSF410A TSF412A TSF418A TSF420D TSF421E TSF422D TSF425A TSF428C TSF434A TSF434C TSF435C TSF442A TSF447A TSF448A TSF448S TSF450C

TSF2140-01

Contextual Info: Flexibility & Innovation …. DS0226 _01 7/06/01 DATA S HEET TSF2140-01 2140 MHZ 3G RX SAW FILTER PRELIMINARY SPECIFICATION PACKAGE 3.0X3.0 MM SMD C D B E A F A F B E C D PRODUCT F EATURES : Ø LOW LOSS 3.8 mm Ø HIGH R EJECTIONS Ø SMALL SMD PACKAGE T EMEX S.A.W.

Contextual Info: TSF20U45C thru TSF20U60C creat by ART Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability

Contextual Info: TSF20H100C thru TSF20H150C Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and

Contextual Info: Preliminary TSF20100C creat by ART Dual High-Voltage Trench MOS Barrier Schottky Rectifier ITO-220AB Features ² Patented Trench MOS Barrier Schottky technology ² Excellent high temperature stability ² Low forward voltage ² Lower power loss/ High efficiency

dx 400

Abstract: TSF21 TSF22 TSF23 TSF24 TSF26
Contextual Info: 2.0A Super Fast Recovery Rectifier TSF21 – TSF26 2.0A Super Fast Recovery Rectifier Features • • • • • Low forward voltage drop High current capability High reliability High surge current capability High temperature soldering guaranteed 250°C/10 seconds

DS0382

Abstract: TSF2448-01
Contextual Info: Flexibility & Innovation …. DS0382 V .01 14.06.02 DATA S HEET TSF2448-01 2448.5 MHZ S.A.W.FILTER PRELIMINARY SPECIFICATION PROPOSAL PACKAGE 3.8X3.8 MM OR 3X3 MM SMD D B E A F F B E C D Ø HIGH R EJECTIONS Ø SMALL SMD PACKAGE CONTACT : T EMEX S.A.W. PUITS -GODET 8,

Contextual Info: TSF20H150C creat by ART Taiwan Semiconductor FEATURES Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency

Contextual Info: TSF2080C creat by ART Taiwan Semiconductor FEATURES Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability

Contextual Info: TSF2080C creat by ART Taiwan Semiconductor Dual High-Voltage Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability

TSF20U100C

Contextual Info: TSF20U100C Taiwan Semiconductor Dual High-Voltage Trench Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability

TSF2060C

Abstract: ITO-220AB
Contextual Info: Preliminary TSF2060C Dual High-Voltage Trench MOS Barrier Schottky Rectifier ITO-220AB Features ² Trench MOS Schottky technology ² Low forward voltage drop, low power losses ² High efficiency operation ² Meet MSL level 1, per J-STD-020D, lead free maximum peak of 260℃

Contextual Info: Flexibility & Innovation …. DS0383V.02 15.07.02 DATA SHEET TSF2441-01 2441.5MHZ SAW FILTER PRELIMINARY SPECIFICATION PROPOSAL PACKAGE 3X3 MM SMD PRODUCT FEATURES : Ø LOW LOSS 1.25±0.25 Ø HIGH REJECTIONS Ø SMALL SMD PACKAGE CONTACT : 1.50±0.15 3 4

Contextual Info: TSF20U60C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability