TSF10100C Search Results

Contextual Info: Preliminary TSF10100C creat by ART Dual High-Voltage Trench MOS Barrier Schottky Rectifier ITO-220AB Features ² Patented Trench MOS Barrier Schottky technology ² Excellent high temperature stability ² Low forward voltage ² Lower power loss/ High efficiency

Contextual Info: Preliminary TSF10U60C Dual High-Voltage Trench MOS Barrier Schottky Rectifier ITO-220AB Features ² Trench MOS Schottky technology ² Low forward voltage drop, low power losses ² High efficiency operation ² Solder bath temperature 245±5℃, per JESD22-B102D for ITO-220AB package

TSF2060C

Abstract: ITO-220AB
Contextual Info: Preliminary TSF2060C Dual High-Voltage Trench MOS Barrier Schottky Rectifier ITO-220AB Features ² Trench MOS Schottky technology ² Low forward voltage drop, low power losses ² High efficiency operation ² Meet MSL level 1, per J-STD-020D, lead free maximum peak of 260℃

EC 1030

Contextual Info: Preliminary TSF1060C Dual High-Voltage Trench MOS Barrier Schottky Rectifier ITO-220AB Features ² Trench MOS Schottky technology ² Low forward voltage drop, low power losses ² High efficiency operation ² Solder bath temperature 245±5℃, per JESD22-B102D for ITO-220AB package

Contextual Info: Preliminary TSF10U45C Dual High-Voltage Trench MOS Barrier Schottky Rectifier ITO-220AB Features ² Trench MOS Schottky technology ² Low forward voltage drop, low power losses ² High efficiency operation ² Solder bath temperature 245±5℃, per JESD22-B102D for ITO-220AB package