TSF10U60C Search Results

TSF10U60C Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
TSF10U60C		Taiwan Semiconductor	DIODE ARRAY SCHOTT 60V ITO220AB	Original	PDF	489.05KB	5
TSF10U60C C0G		Taiwan Semiconductor	Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE ARRAY SCHOTT 60V ITO220AB	Original	PDF	199.93KB

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Taiwan Semiconductor


Taiwan Semiconductor TSF10U60C DIODE ARR SCHOTT 60V 5A ITO220AB
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TSF10U60C Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Preliminary TSF10U60C Dual High-Voltage Trench MOS Barrier Schottky Rectifier ITO-220AB Features ² Trench MOS Schottky technology ² Low forward voltage drop, low power losses ² High efficiency operation ² Solder bath temperature 245±5℃, per JESD22-B102D for ITO-220AB package	Original	ITO-220AB TSF10U60C JESD22-B102D ITO-220AB 2002/95/EC 2002/96/EC TSF10100C	PDF
Contextual Info: TSF10U60C Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and	Original	TSF10U60C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1408024	PDF
Contextual Info: TSF10U60C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability	Original	TSF10U60C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1401023	PDF
Contextual Info: TSF10U60C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability	Original	TSF10U60C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1401023	PDF
Contextual Info: TSF10U60C Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and	Original	TSF10U60C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1401023	PDF
Contextual Info: TSF10U60C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability	Original	TSF10U60C 2011/65/EU 2002/96/EC ITO-220AB 22-B102 D1311017	PDF
Contextual Info: TSF10U45C thru TSF10U60C creat by ART Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability	Original	TSF10U45C TSF10U60C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1401030	PDF