TSD2 Search Results

RF transistor marking IN SOT-89

Abstract: RF transistor marking H SOT-89 RF transistor marking "SOT-89" RF transistor Type code SOT-89
Contextual Info: TSB1424 Low Vcesat PNP Transistor SOT-89 SOT-23 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO -20V BVCEO -20V IC -3A VCE SAT Features ● ● Ordering Information Low VCE(SAT) -0.2 @ IC / IB = -2A / -100mA (Typ.) Complementary part with TSD2150

Contextual Info: TSD2098A Low Vcesat NPN Transistor SOT-89 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCBO 95V BVCEO 20V IC 5A VCE SAT Features ● ● Ordering Information Ultra Low VCE(SAT) 0.5V @ IC / IB = 3.5A / 40mA Excellent DC current gain characteristics

Contextual Info: r=7 ^ 7 SGS-THOMSON TSD2900 [j}fflO Mi[LI gTrœROD©i RF & MICROWAVE TRANSISTO RS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to

TSB1424CY

Abstract: marking 3A sot-89 TSB1424 MARKING CODE BV sot-89
Contextual Info: TSB1424 Low Vcesat PNP Transistor SOT-89 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCBO -20V BVCEO -20V IC -3A VCE SAT Features ● ● Ordering Information Low VCE(SAT) -0.2 @ IC / IB = -2A / -100mA (Typ.) Complementary part with TSD2150

TSD2921

Contextual Info: TSD2921 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to

TSD2904

Contextual Info: TSD2904 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to

SGS-THOMSON

Abstract: TSD2922 M176
Contextual Info: TSD2922 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to

TSB1424CY

Abstract: TSB1424 "PNP Transistor"
Contextual Info: TSB1424 Low Vcesat PNP Transistor SOT-89 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCBO -20V BVCEO -20V IC -3A VCE SAT Features ● ● Ordering Information Low VCE(SAT) -0.2 @ IC / IB = -2A / -100mA (Typ.) Complementary part with TSD2150

SD 1496 transistor

Abstract: TSD2M350F
Contextual Info: 30 E T> n 7 ^ 5 3 7 QG3D534 SGS-THOMSON ^ ^ HLJOTMWi ¿ 5 7 '5 7 TSD2M350F TSD2M350V s 6 S-THOMSON N - CHANNEL ENHANCEMENT MODE _ ISOFET POWER MOS TRANSISTOR MODULE ADVANCE DATA TYPE V TSD2M350F/V dss 400 V RDS on 0.150 Id n 30 A • . . . HIGH CURRENT POWER MOS MODULE

Contextual Info: SGS-THOMSON TSD2903 m RF & MICROWAVE TRANSISTO RS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specitications tor a product which is currently under development by SGS-THOMSON. The design criteria and specitications ot this item could change prior to

Contextual Info: TSD2150A Low Vcesat NPN Transistor SOT-89 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCBO 80V BVCEO 50V IC 3A VCE SAT Features ● ● 0.5V @ IC / IB = 2A / 200mA Ordering Information Low VCE(SAT) 0.1 @ IC / IB = 1A / 50mA (Typ.) Complementary part with TSB1424A

Contextual Info: SGS-THOMSON sUICT»M SS TSD2922 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to

Contextual Info: / I T SGS-THOMSON ^7# [M œ tôSKgïïM KS TSD2921 RF & MICROWAVE TR AN SISTO RS _HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under

3A 100V npn LOW SATURATION VOLTAGE

Abstract: TSD2098 TSD2098A
Contextual Info: TSD2098A Low Vcesat NPN Transistor SOT-89 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCBO 100V BVCEO 20V IC 5A VCE SAT Features ● ● Ordering Information Low VCE(SAT) 0.35V @ IC / IB = 3A / 100mA (Typ.) Excellent DC current gain characteristics

TSD2903

Abstract: TSD2902 25x2mA
Contextual Info: SGS-THOMSON sUICT»M SS TSD2903 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to

TSD231

Contextual Info: 13E D I TSD2310 O g DOSSI 5 | VITELIC CORP HF V IT E L IC V61C01 &V61C02 FAMILY HIGH PERFORMANCE LOW POWER 512 x 9 & 1024 x 9 BIT CMOS PARALLEL FIFO MEMORY •%£ Addressing is maintained internally by both ports so that data are stored and recovered sequentially by

TSB1424A

Abstract: TSD2150A TSD2150ACY
Contextual Info: TSD2150A Low Vcesat NPN Transistor SOT-89 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCBO 80V BVCEO 50V IC 3A VCE SAT Features ● ● Ordering Information Low VCE(SAT) 0.1 @ IC / IB = 1A / 50mA (Typ.) Complementary part with TSB1424A

Contextual Info: My Account C hange Tyco Electronics Se a rch by Ke yword or Pa rt # Products Documentation Resources My Account Customer Support Home > Products > By Type > Switches > Product Feature Selector > Product Details TSD21AAGPC Product Details Live Product Chat

Contextual Info: TSD2922 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to

Contextual Info: TSD2900 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to

TSD2921

Contextual Info: rz T SGS-THOMSON ^ 7# HD »iLECÊ¥ Q !D(gI TSD2921 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specitications tor a product which is currently under development by SGS-THOMSON. The design criteria and specitications ot this item could change prior to

TSD2M450V

Abstract: TSD2M450F TSD2M450
Contextual Info: 30E S G S-THOMSON Q03GS3b D SGS-THOMSON X - 3 ° \- \5 iy D TSD2M450F TSD2M450V N - CHANNEL ENHANCEMENT MODE ISOFET POWER MOS TRANSISTOR MODULE A D VANC E DATA TYPE V d ss RDS on Id T S D 2 M 4 5 0 F /V 500 V 0 .2 n 26 A . . . • HIGH CURRENT POWER MOS MODULE

80V 1A NPN Transistor TO-92

Abstract: transistor b11 TSD2150A NPN Transistor TO92 5V 200mA 0118 transistor 2A 80v complementary transistor 0118 n-p-n
Contextual Info: TSD2150A Low Vcesat NPN Transistor SOT-89 Pin Definition: 1. Base 2. Collector 3. Emitter TO-92 Pin Definition: 1. Emitter 2. Collector 3. Base PRODUCT SUMMARY BVCBO 80V BVCEO 50V IC 3A VCE SAT Features ● ● Ordering Information Low VCE(SAT) 0.1 @ IC / IB = 1A / 50mA (Typ.)

"PNP Transistor"

Abstract: PNP Epitaxial Silicon Transistor sot-23 PNP Transistor TSB1590 TSB1590CX TSD2444 transistor pnp Vcbo 25V
Contextual Info: TSB1590 Low Vcesat PNP Transistor SOT-23 PRODUCT SUMMARY Pin Definition: 1. Base 2. Emitter 3. Collector BVCBO -40V BVCEO -25V IC -1A VCE SAT Features ● ● Ordering Information Low VCE(SAT) -0.4 @ IC / IB = -150mA / -15mA Complementary part with TSD2444