TS4* BRIDGE Search Results
TS4* BRIDGE Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| TCK423G | Toshiba Electronic Devices & Storage Corporation | MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G | Datasheet | ||
| TCK422G | Toshiba Electronic Devices & Storage Corporation | MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G | Datasheet | ||
| TCK424G | Toshiba Electronic Devices & Storage Corporation | MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G | Datasheet | ||
| TCK126BG | Toshiba Electronic Devices & Storage Corporation | Load Switch IC, 1 to 5.5 V, 1 A, WCSP4G | Datasheet | ||
| TCK401G | Toshiba Electronic Devices & Storage Corporation | MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing / Auto-discharge, WCSP6E | Datasheet |
TS4* BRIDGE Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
1108b
Abstract: ac 187 pin configuration 1102B 1102FB 1102UFB 1104B 1104FB 1106B 1106FB 1108FB
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OCR Scan |
150ns3000ns1102b1104b+9 | |
SEMISTACKContextual Info: s e M IK R D n Vrrm 30 A .120 A Rotating silicon rectifier assemblies in six-pulse bridge connection for brushless a.c. generators Id V 30 A 50 A 70 A 120 A 800 R 132/08 R 170/08 R 260/08 R 261/08 1200 R 132/12 R 170/12 R 260/12 R261/12 w 180 g 400g 800 g |
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r261/1200gls13b13bb71semistack | |
saa7136
Abstract: SAA7160 IC SAA7136 SAA7160ET SAA7160E Philips SAA7160 NXP P60 Philips SAA713 JESD22-A114 LBGA196
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Original |
saa7160saa7160esaa7160etsaa7136+6 | |
AD10
Abstract: EM6415 EM6415V1SS36A EM6415V1WS11 SSOP36
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em641536-pinad10em6415v1ss36a+2 | |
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Contextual Info: Beacon Tower Flasher FS & FA Series B-KON Flashers have proven their reliability through years of use on communication towers, smoke stacks, cooling towers, tall buildings, bridges and utility towers. The highest quality components are encapsulated in a rugged plastic |
Original |
fs155-30rffs165-30rffs155-30tfs165-30t+3 | |
DDA010
Abstract: H17j KDS 1M
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OCR Scan |
ca91c01531-longwordca91c014dda010+2 | |
scale sensor
Abstract: application of dual slope adc metal sensor interfacing with microcontroller AD10 EM6415 SSOP36 EM MICROELECTRONIC-MARIN EM6415 em microelectronic operation of 16 bit dual slope adc
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Original |
em6415scale sensorapplication of dual slope adcmetal sensor interfacing with microcontroller+5 | |
VAM-03
Abstract: DDA010 VAM03 TL31 LA 4108 KDS 5.000 VAM02 ka bs 89 TL46 WO 8 94 00 KDS 8.000
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OCR Scan |
0dg0731ca91c01531-longwordt-5z-33-s5+11 | |
TDA1516
Abstract: MBC 100-60 TDA1516CQ
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OCR Scan |
tda1516cq7110fl2b7110fihbdda13fl3+2 | |
405GP register
Abstract: 405GP 405GP pci register NPe405 NPE405L pvr 140 ppc405
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405gpnpe405npe405lnpe405h+4 | |
ES215
Abstract: EAL20 LB2X
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OCR Scan |
tp3410es215eal20lb2x | |
A24D16
Abstract: a32u A241D VAM03 omac vd 100 VAM-03 a64b
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ca91c06464-bitdarf64ca91c015+11 | |
MDL-16265
Abstract: display 16x2 CON60A CON10A 1n4002 diode dta sheet SK SMD T3B diode smd diode U12 1N4002 HC49
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usbn9602lm3940lm340mdl-16265+9 | |
KMZ10B
Abstract: SOT195 Magnetic Field Sensor 0032L
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OCR Scan |
0032lkmz10b7z81990bbs3t31+3 | |
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Contextual Info: Philips Semiconductors b b s a 'm Q D 3 2 fc.3 b 245 M A P X Product specification KMZ10B Magnetic field sensor . N AMER PHILIPS/DISCRETE DESCRIPTION b^E D PIN CONFIGURATION The KMZ10B is a sensitive magnetic field sensor, employing the magneto-resistive effect of thin film |
OCR Scan |
kmz10bbbs3t31ot195 | |
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Contextual Info: ISDN ST541O 2B1Q UID U INTERFACE DEVICE Introductory data sheet January 1990 INDEX DISTINCTIVE CHARACTERISTICS General features Transmission features System features GENERAL DESCRIPTION PIN FUNCTION FUNCTIONAL DESCRIPTION Digital Interfaces fiW/DSI mode jiW Control interface |
OCR Scan |
st541o | |
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Contextual Info: / = 7 S C S T H O M S O N ST5410 2B1Q U INTERFACE DEVICE A D V A N C E DATA G EN E R AL FEATURES • SINGLE CHIP 2B1Q LINE CODE TR AN S CEIVER ■ SUITABLE FOR BOTH ISDN AND PAIR GAIN APPLICATIO NS ■ MEETS OR EXCEEDS ANSI T 1 .601-1988 U.S. STANDARD ■ MEETS OR |
OCR Scan |
st5410st/laa/elr/822 | |
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Contextual Info: rZJ SGS-THOMSON ^ 1ËI ST5410 2B1Q U INTERFACE DEVICE ADVANCE DATA GENERAL FEATURES • SINGLE CHIP 2B1Q LINE CODE TRANS CEIVER ■ SUITABLE FOR BOTH ISDN AND PAIR GAIN APPLICATIONS ■ MEETS OR EXCEEDS ANSI T1.601-1988 U.S. STANDARD ■ MEETS OR EXCEEDS ST/LAA/ELR/822 |
OCR Scan |
st5410st/laa/elr/822300mw18kft+3 | |
tig IGBT module
Abstract: tig ac inverter circuit 7MBR15NE120 tig inverter
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OCR Scan |
7mbr15ne120/15a/pimx4-10tig igbt module+2 | |
a32u
Abstract: P11S1 N1415 a32u32 A3203 VAM-03 a15C1 dla s14 200-3
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OCR Scan |
ca91c06464-bitdarf64ca91c015+12 | |
Er 38 transformerContextual Info: rZT SGS-THOMSON ST5410 2B1Q U INTERFACE DEVICE A D V A N C E DATA G EN E R AL FEATURES . SINGLE CHIP 2B1Q LINE CODE TR AN S CEIVER • SUITABLE FOR BOTH ISDN AND PAIR GAIN APPLICATIONS ■ MEETS OR EXCEEDS ANSI T 1 .601-1988 U.S. STANDARD ■ MEETS OR EXCEEDS ST/LAA/ELR/822 |
OCR Scan |
st5410st/laa/elr/822300mw18kft+2 | |
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Contextual Info: Solid-State Relay - Non-Isolated SLR Series The SLR Series has no isolation between the control switch input and the solid-state output. Select the SLR for applications where the control switch is the same voltage source as the load. Provides the noiseless, reliability and long life of a solid-state |
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2000V 100A TRIACContextual Info: Impulse Latching Relay NLF1/NLF2 Series The NLF1 and NLF2 Series provide a lip-lop latching function. Each time the control switch is closed, the solid-state output changes state and latches. The NLF Series has no isolation between the control switch and the solid-state output, |
Original |
2000v 100a triac | |
ST5410
Abstract: pin diagrom of 4 bit up down counters stt4 st5410c cl-gd STS410 1554k
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OCR Scan |
st5410st/laa/elr/822300mw18kft+7 | |