STT4 Search Results

Contextual Info: STT4NF30L N - CHANNEL 30V - 0.055Í1 - 4A - TSOP-6 _ STripFET MOSFET PRELIMINARY DATA TYPE STT4N F30L V dss R dS oii Id 30 V < 0.0 6 5 Q. 4 A • TYPICAL R D S (on) = 0.055 . STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY . LOW THRESHOLD DRIVE

STT4660

Contextual Info: STT4660 Green Product S a mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS ON . PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max Rugged and reliable. 23 @ VGS=10V

STT4PF20V

Abstract: SOT-23-6l
Contextual Info: STT4PF20V P-CHANNEL 20V - 0.090 Ω - 3A SOT23-6L 2.7V-DRIVE STripFET II POWER MOSFET • ■ ■ ■ TYPE VDSS STT4PF20V 20 V RDS on ID < 0.11 Ω ( @ 4.5 V ) < 0.135 Ω ( @ 2.7 V ) 3A TYPICAL RDS(on) = 0.090 Ω @ 4.5 V TYPICAL RDS(on) = 0.100 Ω @ 2.7 V

STT4NF30L

Contextual Info: STT4NF30L  N - CHANNEL 30V - 0.055Ω - 4A - TSOP-6 STripFET MOSFET PRELIMINARY DATA TYPE STT4NF 30L • ■ ■ V DSS R DS on ID 30 V < 0.065 Ω 4 A TYPICAL RDS(on) = 0.055 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE

STT4NF30L

Contextual Info: STT4NF30L N-CHANNEL 30V - 0.050 Ω - 4A SOT23-6L STripFET II POWER MOSFET • ■ ■ TYPE VDSS RDS on ID STT4NF30L 30 V < 0.065 Ω ( @ 10 V ) 4A TYPICAL RDS(on) = 0.050 Ω @ 10 V LOW Qg LOW THRESHOLD DRIVE DESCRIPTION This Power MOSFET is the second generation of

Contextual Info: STT4P3LLH6 P-Channel 30 V, 0.04 Ω typ., 4 A STripFET VI DeepGATE™ Power MOSFET in SOT23-6L package Datasheet - preliminary data Features 4 5 6 3 Order code VDS RDS on max ID STT4P3LLH6 30 V 0.06 Ω at 10 V 4A • RDS(on) * Qg industry benchmark 2 1

starcom

Abstract: vacuum fluorescent
Contextual Info: 01/09/1999 10:50 353-65-71311 D-AT A • » lld JlJft DATA DISPLAY PAGE 12 P R O D U C T SPEC IFIC A TION ¿12. I3 ~ l0 STT42026 Product Name StarCom 42026 Technology Vacuum Fluorescent Line 4 lines Character per line 20 characters Character Height 26 mm Brightness and Colour

STT432S

Contextual Info: STT432S Green Product S a mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS ON . PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max Rugged and reliable. 11.5 @ VGS=10V

Contextual Info: STT49GKxxB Thyristor-Thyristor Modules Type STT49GK08B STT49GK12B STT49GK14B STT49GK16B STT49GK18B Symbol VRSM VDSM V 900 1300 1500 1700 1900 Test Conditions ITRMS, IFRMS TVJ=TVJM ITAVM, IFAVM TC=85oC; 180o sine VRRM VDRM V 800 1200 1400 1600 1800 Tolerance:+0.5mm

STT4PF20V

Contextual Info: STT4PF20V P-CHANNEL 20V - 0.090 Ω - 3A SOT23-6L 2.7V-DRIVE STripFET II POWER MOSFET • ■ ■ ■ TYPE VDSS STT4PF20V 20 V RDS on < 0.11 Ω ( @ 4.5 V ) < 0.135 Ω ( @ 2.7 V ) ID 3A TYPICAL RDS(on) = 0.090 Ω @ 4.5 V TYPICAL RDS(on) = 0.100 Ω @ 2.7 V

Contextual Info: STT4443 -2.3A , -30V , RDS ON 120 m P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION TSOP-6 STT4443 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely

STT49

Abstract: STT49GK08 STT49GK12 STT49GK14 MTC49
Contextual Info: STT49 Thyristor-Thyristor Modules Dimensions in mm 1mm=0.0394" Type STT49GK08 STT49GK12 STT49GK14 STT49GK16 STT49GK18 Symbol VRSM VDSM V 900 1300 1500 1700 1900 Test Conditions ITRMS, IFRMS TVJ=TVJM ITAVM, IFAVM TC=85oC; 180o sine VRRM VDRM V 800 1200 1400

Contextual Info: STT4NF30L N - CHANNEL 30V - 0.055Ω - 4A - TSOP-6 STripFET MOSFET PRELIMINARY DATA TYPE STT4NF30L • ■ ■ V DSS R DS on ID 30 V < 0.065 Ω 4A TYPICAL RDS(on) = 0.055 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE

Contextual Info: STT4NF30L N-CHANNEL 30V - 0.050 Ω - 4A SOT23-6L STripFET II POWER MOSFET • ■ ■ TYPE VDSS RDS on ID STT4NF30L 30 V < 0.065 Ω ( @ 10 V ) 4A TYPICAL RDS(on) = 0.050 Ω @ 10 V LOW Qg LOW THRESHOLD DRIVE DESCRIPTION This Power MOSFET is the second generation of

stu9nc80zi

Abstract: STL5NK65Z stp3nc90zfp STB45NF06 dpak DIODE IRF640 morocco STS3DPFS45 IRF540 complementary STGB10NB37LZ STP14NK50Z
Contextual Info: MOSFETs & IGBTs Progress in Power Switching Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions VDss V RDS(on) @ 10V (Ω) P/N ID(cont) (A) RDS(on) @ 4.5V (Ω) Qg @ 10V(Typ) (nC) -60 -30 -20 30 100 0.27 0.165 0.155 0.065 0.8 STT2PF60L

fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier

ST5410

Abstract: pin diagrom of 4 bit up down counters stt4 st5410c cl-gd STS410 1554k
Contextual Info: /TT SGS-THOMSON ST5410 6 * [ S Î It iC T M 0 g S 2B1Q U INTERFACE DEVICE A D V A N C E DATA G EN E R AL FEATURES • SINGLE CHIP 2B1Q LINE CODE TR AN S­ CEIVER ■ SUITABLE FOR BOTH ISDN AND PAIR GAIN APPLICATIO NS ■ MEETS OR EXCEEDS ANSI T 1 .601 -1988

lem CTSR

Abstract: cwi 1011 1170S p832 TWISTER T fiber T27 TIMER RR22H-RR23H
Contextual Info: PRELIMINARY October 1994 DP83256/56-AP/57 PLAYER + Device FDDI Physical Layer Controller General Description The DP8 32 56/56-AP/ 5 7 Enhanced Physical Layer Control­ ler (PLAYER + device) implements one complete Physical Layer (PHY) entity as defined by the Fiber Distributed Data

Contextual Info: SIGN DA T E DESCRIPTION APPROVER THIS IS C A D DRAWING, DO N O T R E V IS E M ANUALLY!!! N x5 .01+1.5 Nx5.0 Material • T e rm in a l b od y • (m etal h o u sin g : B r a s s S ta m p e d • T e rm in a l scre w : S t e e l Z in c p la t in g co m b in a tion ty p e

E251-230

Abstract: abb timer stt 11 abb timer stt 17 s ABB STT 111 E 234-mfr E252-230 STT-227 N manual ABB sds 101 n ABB STT 117 L STT-227 N
Contextual Info: Technical data System pro M Modular Installation Equipment System pro M SK 6 1 System pro M When connecting aluminium conductors ensure that the contact surfaces of the conductors are cleaned, brushed and treated with grease. Re-tighten contact terminals after 6 to 8 weeks'

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

IRF540 complementary

Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
Contextual Info: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3

B3597

Abstract: B3603 4JD7A35 2N2649 B3604 bfs23 BLY25 sdt1665 2N2485 MHT9003
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE I I MIN. MAX Pc T6TT