TRW 1030 Search Results

M38510/10101

Abstract: 14538B MOTOROLA smd transistor 72k code eprom smd atmel QP7C185A M38510-11003 QP7C198 8708 eprom M38510/11201 M38510/10105
Contextual Info: Product Selector Guide March 28, 2005 Analog Description Package SMD Number Part Number DIP 5962-87786 TDC1046 TRW DIP, LCC 5962-88532 TDC1049C1V TRW National A/D Converter, 6-Bit Flash A/D Converter, 9-Bit Comparator, Differential Die Mfg DIP, CAN, FP, LCC

robinson-nugent din

Abstract: TDC1112
Contextual Info: THC1069 Complete High-Speed A/D Converter 9-Bit, 37 Msps The TRW THC1069 is a complete analog-to-digital converter that combines all the circuitry required to convert high-speed analog signals into 9-bit digital data at rates up to 37 Msps Megasamples per second . The THC1069

B20n

Abstract: 8609 souriau TDC1112 THC1069 THC1069E1C THC4940 RNE-64BS-S-TG 8609-264-6114-7550E1
Contextual Info: THC1069 7 T i Complete High-Speed A/D Converter 9-Bit, 37 Msps The TRW THC1069 is a complete analog-to-digital converter that combines all the circuitry required to convert high-speed analog signals into 9-bit digital data at rates up to 37 Msps Megasamples per second . The THC1069

motorola 6820

Abstract: motorola 7852 motorola 8026 motorola ST 1076 trw 7730 6840 1 motorola ic 8279
Contextual Info: MOTOROLA SC 1EE D I b3t.7ESM GGfifiMGl 3 | XSTRS/R F MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA TRW 53001 Se rie s The RF Line M ic r o w a v e Linear P o w e r T ra n sisto rs 7.5 TO 8.5 dB 1 TO 3 GHz 0.8 W ATT M ICRO W AVE LINEAR POWER T R A N SIST O R S

trw RF POWER TRANSISTOR

Abstract: trw rf transistor trw transistors LT 9228 trw 131* RF POWER TRANSISTOR trw rf semiconductors 2023-12 TRW 52604 TP 9382 trw hybrid
Contextual Info: TR W RF SEMICONDUCTORS CATALOG 1981 EUROPEAN EDITION TABLE OF CONTENTS Pages • • • • INTRODUCTION. Q U A LITY .

TDC1012

Abstract: TDC1048 MARKING lsi logic 10-TURN FHC1068 THC1068 THC1068E1C THC1068S7V1 irf 5110 B24DA
Contextual Info: FHC1068 7 #7 r V Complete High-Speed A/D Converter 8-Bit, 25Msps Designed to be user-friendly, th e T H C 1068 is a com plete flash ana lo g -to -d ig ita l conve rter th a t com bines all circuitry required to convert high-speed analog signals into 8 -b it

TDC1012

Abstract: THC1068E1C RNE-64BS-S-TG
Contextual Info: M t\V W THC1068 Complete High-Speed A/D Converter 8-Bit, 25Msps Designed to be user-friendly, the THC1068 is a complete flash analog-to-digital converter that combines all circuitry required to convert high-speed analog signals into 8-bit digital data at rates of up to 25Msps MegaSamples Per

1030J6C

Abstract: C1030B TDC1030B6C 1030J6A
Contextual Info: m m m T D C 1 0 3 0 M First-In First-Out Memory 64 Words by 9 Bits Cascadable T he T R W T D C 1 0 3 0 is an expandable, First-In First-Out FIFO m em ory organized as 64 w o rd s by 9 bits. A 1 5 M H z data rate m akes it ideal in high-speed ap p li­ cations. Bu rst data rates of 18MFHz can be obtained in

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

TRW 1030J6C

Abstract: 1030J6C SO-64 TDC1030B6C TDC1030 TDC1030B6A TDC1030C3A TDC1030C3C
Contextual Info: iiiv r TDC1030 First-In First-Out Memory Features 6 4 W o rd s by 9 Bits C ascadable • 6 4 W o r d s B y 9 B it s O r g a n iz a t io n T h e T R W T D C 1 0 3 0 is a n e x p a n d a b le , F ir st -In F ir s t - O u t F IF O m e m o r y o r g a n iz e d a s 6 4 w o r d s b y 9 bits. A

514100A

Contextual Info: O K I Semiconductor IC MSM6691 DRAM INTERFACE LSI Description Features DRAMs can be used for voice storage by connecting the MSM6691 with Oki's integrateR /W Read/Write LSIs, theMSM6388, andtheMSM6588. TheMSM6691 translates the signals associated with the dedicated

ALH208C

Abstract: TRW mmic 9701455-S-J1
Contextual Info: ALH208C Low-Noise Amplifier GaAs Telecom Products Features • RF frequency: 35-45 GHz • Linear gain: 12 dB • NF: 3.5 dB • Unconditionally stable • Balanced design provides excellent input and output VSWR • Self-bias design single supply • DC power: 5 Vdc at 36 mA

CA2800

Abstract: 709P trw hybrid
Contextual Info: T R li E LEK C r iP N T / R F S'! » Ë J ûfiSSOSM 0D03Û70 ? | T ~ 7 y .Q 9 . p ; R F Devices Division T R W Electronic Components Group CA2800 Power Output, 800mW 17dB Gain 400mW PEP @ - 32dB IMD Instantaneous Bandwidth, 10-400MHz Low Noise Figure, 5dB

M51100A

Abstract: MSM6388 MSM6588 MSM6691 MSM OKI 0017E
Contextual Info: O K I Semiconductor IC MSM6691 DRAM INTERFACE LSI Description Features DRAMs can be used for voice storage by connecting the MSM6691 with Oki's integrateR/W Read/Write LSIs, theMSM6388, and the MSM6588. TheMSM6691 translates the signals associated with the dedicated

MSM5416256

Contextual Info: O K I Semiconductor MSII5 4 1 6 2 5 8 A_ 262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5416258A is a 262,144-word x 16-bit configuration fast page mode type DRAM with EDO. The MSM5416258A achieves high integration, high-speed operation, and low-power consumption

ac723

Contextual Info: AC723 • ACT723 54AC/74AC723 • 54ACT/74ACT723 64 x 9 First-In, First-Out Memory Description Connection Diagrams The ’AC/’ACT723 is an expandable first-in, first-out memory organized as 64 words by 9 bits. An 85 MHz shift-in and 60 MHz shift-out typical data

SM5838AS

Contextual Info: SM5838AS 5120 x 8-bit Synchronous FIFO OVERVIEW The SM5838AS is a 5120 × 8-bit synchronous FIFO first in, first out high-speed line buffer. Internally, it employs static CMOS circuits which mean that it effectively has limitless data hold times. It can operate at

KS0713

Abstract: what is COG capacitor KS0713 page SM 5271
Contextual Info: 65COM/132SEG DRIVER & CONTROLLER FOR STN LCD KS0713 INTRODUCTION The KS0713 is a driver and controller LSI for graphic dot-matrix liquid crystal display systems. It contains 65 common and 132 segment driver circuits. This chip is connected directly to a microprocessor, accepts 8-bit serial

AC723

Abstract: TRW10 NE 5322 TRW1030
Contextual Info: AC723 • ACT723 54AC/74AC723 • 54ACT/74ACT723 64 x 9 First-In, First-Out Memory Connection Diagrams Description The ’AC/’ACT723 is an expandable first-in, first-out memory organized as 64 words by 9 bits. An 85 MHz shift-in and 60 MHz shift-out typical data

DIODE HF 20

Abstract: 74ACT2708 74ACT2708PC N28B
Contextual Info: Revised January 1999 74ACT2708 64 x 9 First-In, First-Out Memory General Description Features The ACT2708 is an expandable first-in, first-out memory organized as 64 words by 9 bits. An 85 MHz shift-in and 60 MHz shift-out typical data rate makes it ideal for high-speed

N28B

Abstract: 74ACT2708 74ACT2708PC
Contextual Info: 74ACT2708 64 x 9 First-In, First-Out Memory General Description Features The ACT2708 is an expandable first-in, first-out memory organized as 64 words by 9 bits. An 85 MHz shift-in and 60 MHz shift-out typical data rate makes it ideal for high-speed applications. It uses a dual port RAM architecture with

Contextual Info: DALLAS DS122?7 s e m ic o n d u c to r K ickstarter Chip PIN ASSIGNMENT FEATURES • Provides step-up regulation and microenergy management for battery-operated systems VCC02 £ 1 VCC03 [ 2 VCC01 [ 3 • Converts +3V to +6V DC input power source to +5V DC out for system power

DIODE 1N418

Abstract: 1N5418V Nytronics PL B64290-K38 nytronics delay
Contextual Info: DALLAS SEMICONDUCTOR DS1227 Kickstarter Chip PIN ASSIGNMENT FEATURES • Provides step-up regulation and microenergy management for battery-operated systems VCC02 £ 1 VCC03[ 2 VCCOI [ 3 pwron[ 4 VDCO[ S • Converts +3V to +6V DC input power source to +5V

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.