TRIMMER ACP Search Results

P0622143H

Contextual Info: 01.09.03 P0622143H 2.1 GHz band ♦ Features Power Amplifier Module • • • • 2.1 GHz frequency band Typical 35 dBm output power Low power consumption 7.5 W typ. Excellent ACPR < -55 dBc@Pout=20 dBm Ave. Power • • • • Typical 22 dB power gain

CC1020 PA LNA

Abstract: HC-49 SMD CONN10M c_2p2_0402_np0_c_50 c40 capacitor 33N04 CC1020EMX-433 12N04 smd transistor bc846 smd diode L23
Contextual Info: User Manual Rev. 1.1 SmartRF CC1020/1070DK Development Kit Chipcon AS, Gaustadalléen 21, NO-0349 Oslo, Norway. Support tel. +47 22 95 85 45, fax: +47 22 95 85 46. E-mail: support@chipcon.com Table of Contents: INTRODUCTION .3

CC1020 PA LNA

Abstract: R3304 c_2p2_0402_np0_c_50 CC1020EMX-433 c47p 12N04 2K20402 433 mhz rf module c10p040 smd 7456
Contextual Info: User Manual Rev. 2.0 CC1020/1070DK Development Kit SWRU052 Table of Contents: INTRODUCTION . 3 CC1020/1070DK DEVELOPMENT KIT CONTENTS. 4

television internal parts block diagram

Abstract: CT2014 CT2017 Switching Power Supply 2.5khz M600 CT2010 CT2012 quartz delay line
Contextual Info: CT2012 O S iÜ S S S X _ ADVANCE INFORMATION Advance information Is Issued to advise Customers of new additions to the Plessey Semiconductors range which, nevertheless, still have ‘pre-production’ status. Details given may, therefore, change without notice although we would expect this performance data to

MBL105

Abstract: mbl10 top 8901
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D379 M3D461 BLF900-110; BLF900S-110 Base station LDMOS transistors Preliminary specification 2003 Sep 22 Philips Semiconductors Preliminary specification Base station LDMOS transistors BLF900-110; BLF900S-110 FEATURES APPLICATIONS

TRANSISTOR CW 7808

Abstract: cw 7808 PDC140 7808 cw NPN transistor 2n2222 BLF0810-180 Transistor 2N2222 2N2222 ATC100A ATC100B
Contextual Info: Application Note BLF0810-180; Linear LDMOS amplifier for multi carrier applications in the 869-894 MHz frequency band By Yong Yang, Igor Blednov and Barney Arntz gain and good gain flatness and phase linearity over the band of interest. The device is available

mle350

Abstract: 6 pin TRANSISTOR SMD CODE XI BLF900-110 BLF900S-110 philips ceramic capacitors smd smd capacitor philips 0805 ultralam 2000 top 8901 MBL10
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D379 M3D461 BLF900-110; BLF900S-110 Base station LDMOS transistors Product specification Supersedes data of 2003 Sep 22 2004 Feb 04 Philips Semiconductors Product specification Base station LDMOS transistors BLF900-110; BLF900S-110

Contextual Info: LeCroy PP016 Passive Probe Instruction Manual Revision A – December, 2008 Warranty LeCroy warrants this oscilloscope accessory for normal use and operation within specification for a period of one year from the date of shipment. Spare parts, replacement parts and repairs are warranted for 90 days.

trimmer acp

Abstract: GRM39 HK1608 NJG1301V NJU7660 SSOP14
Contextual Info: NJG1301V MEDIUM POWER AMPLIFIER GaAs MMIC nGENERAL DESCRIPTION NJG1301V is a medium power amplifier which is designed for use of output stage of Japanese PHS and digital wireless phone. NJG1301V features low operating voltage, high efficiency, and comes with, internal input and output matching

Contextual Info: LeCroy PP010 Passive Probe Instruction Manual Revision A – February 2006 Warranty LeCroy warrants this oscilloscope accessory for normal use and operation within specification for a period of one year from the date of shipment. Spare parts, replacement parts and repairs are warranted for 90 days.

Contextual Info: NJG1301V MEDIUM POWER AMPLIFIER GaAs MMIC nGENERAL DESCRIPTION NJG1301V is a medium power amplifier which is designed for use of output stage of Japanese PHS and digital wireless phone. NJG1301V features low operating voltage, high efficiency, and comes with, internal input and output matching

Contextual Info: WaveAce Oscilloscope Passive Probes Models: PP013 PP014 PP015 PP016 Instruction Manual Revision A – November, 2008 Warranty LeCroy warrants this oscilloscope accessory for normal use and operation within specification for a period of one year from the date of shipment. Spare parts,

Contextual Info: BGA7127 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier Rev. 3 — 3 December 2010 Product data sheet 1. Product profile 1.1 General description The MMIC is a one-stage amplifier, offered in a low-cost leadless surface-mount package. It delivers 28 dBm output power at 1 dB gain compression and a superior

BGA7127

Abstract: GRM1885C1H5R1CZ01D GRM1885C1H1R5C PCB Rogers RO4003 GRM1885C1H1R0CZ01D GRM1885C1H680JA01D RO4003C RC0603FR-071R8L yageo metal antenna 001aam119
Contextual Info: BGA7127 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier Rev. 3 — 3 December 2010 Product data sheet 1. Product profile 1.1 General description The MMIC is a one-stage amplifier, offered in a low-cost leadless surface-mount package. It delivers 28 dBm output power at 1 dB gain compression and a superior

ATC700a

Abstract: J141 mosfet atc700a capacitor ATC100A W625 78L08 AN01001 BLF2022-90 marking L5 D marking amplifier
Contextual Info: Application Note BLF2022-90; Linear LDMOS amplifier for 3GPP applications in the 2110-2170 MHz frequency band By Barney Arntz and Korné Vennema CONTENTS 1. 2. 3. 4. 5. 6. 7. 8. The device is available in both a standard as well as an earless SOT502A package.

marking C8 amplifier

Abstract: ATC700A atc100a w262 atc700a capacitor 78L08 AN01001 BLF2022-90 CAPACITOR MARKING transistor 78l08
Contextual Info: Application Note BLF2022-90; Linear LDMOS amplifier for 3GPP applications in the 2110-2170 MHz frequency band By Barney Arntz and Korné Vennema CONTENTS 1. 2. 3. 4. 5. 6. 7. 8. The device is available in both a standard as well as an earless SOT502A package.

Contextual Info: PTF 102022 LDMOS RF Power Field Effect Transistor 180 Watts, 2110–2170 MHz Description Key Features The PTF 102022 is a 180 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. A laterally double– diffused push–pull FET, it operates with 14 dB linear gain. Full gold

Contextual Info: y n y j x i y n CM O S 8 -B it 8 -C h a n n e l D a ta A c q u ia itio n S y s te m General Description The MAX161 and MX7581 are CMOS single-chip 8-bit, 8-charvnei data acquisition systems DAS . Each chip includes an 8-bit A/D converter, 8-channel multi­

Contextual Info: 3.3V 3.2Gbps SONET/SDH LASER DRIVER WITH 50Ω INPUT TERMINATION FEATURES • ■ ■ ■ ■ ■ ■ SY88932L EVALUATION BOARD DESCRIPTION Up to 3.2Gbps operation Modulation current to 60mA 50Ω input termination Rise/fall times < 70ps Programmable laser modulation voltage

11801B

Abstract: Agilent 70843B SMA-109 SY88932L TEKTRONIX 465
Contextual Info: 3.3V 3.2Gbps SONET/SDH LASER DRIVER WITH 50Ω INPUT TERMINATION FEATURES • ■ ■ ■ ■ ■ ■ SY88932L EVALUATION BOARD DESCRIPTION Up to 3.2Gbps operation Modulation current to 60mA 50Ω input termination Rise/fall times < 70ps Programmable laser modulation voltage

TRANSISTOR CW 7808

Abstract: cw 7808 7808 voltage regulator transistor 7808
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D379 BLF1049 UHF power LDMOS transistor Preliminary specification 2001 Oct 09 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF1049 PINNING - SOT502A FEATURES • High power gain

cw 7808

Abstract: voltage regulator 7808 7808 voltage regulator 7808 cw TRANSISTOR CW 7808 transistor 7808 ma 7808 BLF1049
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D379 BLF1049 UHF power LDMOS transistor Preliminary specification 2001 Nov 27 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF1049 PINNING - SOT502A FEATURES • High power gain

7808 voltage regulator

Abstract: BLF0810-180 top 8901
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D379 M3D461 BLF0810-180; BLF0810S-180 Base station LDMOS transistors Preliminary specification 2001 Nov 29 Philips Semiconductors Preliminary specification BLF0810-180; BLF0810S-180 Base station LDMOS transistors FEATURES

NPN transistor 2n2222

Abstract: TRANSISTOR 2N2222 foxboro philips Basestation transistor 2N2222 PHILIPS ATC100B transistor 7808 7808 voltage regulator ATC100A BLF0810-90
Contextual Info: Application Note BLF0810-90 Linear LDMOS for CDMA Basestation Applications in the Cellular Band AN10228_1 Philips Semiconductors TPAN02_02W97 Philips Semiconductors BLF0810-90 Application Note AN10228_1 Abstract The application note presents the performance of the BLF0810-90, Philips’ 90 W LDMOS