TRIMMER ACP Search Results

P0622143H

Contextual Info: 01.09.03 P0622143H 2.1 GHz band ♦ Features Power Amplifier Module • • • • 2.1 GHz frequency band Typical 35 dBm output power Low power consumption 7.5 W typ. Excellent ACPR < -55 dBc@Pout=20 dBm Ave. Power • • • • Typical 22 dB power gain

CC1020 PA LNA

Abstract: HC-49 SMD CONN10M c_2p2_0402_np0_c_50 c40 capacitor 33N04 CC1020EMX-433 12N04 smd transistor bc846 smd diode L23
Contextual Info: User Manual Rev. 1.1 SmartRF CC1020/1070DK Development Kit Chipcon AS, Gaustadalléen 21, NO-0349 Oslo, Norway. Support tel. +47 22 95 85 45, fax: +47 22 95 85 46. E-mail: support@chipcon.com Table of Contents: INTRODUCTION .3

television internal parts block diagram

Abstract: CT2014 CT2017 Switching Power Supply 2.5khz M600 CT2010 CT2012 quartz delay line
Contextual Info: CT2012 O S iÜ S S S X _ ADVANCE INFORMATION Advance information Is Issued to advise Customers of new additions to the Plessey Semiconductors range which, nevertheless, still have ‘pre-production’ status. Details given may, therefore, change without notice although we would expect this performance data to

MBL105

Abstract: mbl10 top 8901
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D379 M3D461 BLF900-110; BLF900S-110 Base station LDMOS transistors Preliminary specification 2003 Sep 22 Philips Semiconductors Preliminary specification Base station LDMOS transistors BLF900-110; BLF900S-110 FEATURES APPLICATIONS

trimmer acp

Abstract: GRM39 HK1608 NJG1301V NJU7660 SSOP14
Contextual Info: NJG1301V MEDIUM POWER AMPLIFIER GaAs MMIC nGENERAL DESCRIPTION NJG1301V is a medium power amplifier which is designed for use of output stage of Japanese PHS and digital wireless phone. NJG1301V features low operating voltage, high efficiency, and comes with, internal input and output matching

Contextual Info: NJG1301V MEDIUM POWER AMPLIFIER GaAs MMIC nGENERAL DESCRIPTION NJG1301V is a medium power amplifier which is designed for use of output stage of Japanese PHS and digital wireless phone. NJG1301V features low operating voltage, high efficiency, and comes with, internal input and output matching

Contextual Info: BGA7127 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier Rev. 3 — 3 December 2010 Product data sheet 1. Product profile 1.1 General description The MMIC is a one-stage amplifier, offered in a low-cost leadless surface-mount package. It delivers 28 dBm output power at 1 dB gain compression and a superior

BGA7127

Abstract: GRM1885C1H5R1CZ01D GRM1885C1H1R5C PCB Rogers RO4003 GRM1885C1H1R0CZ01D GRM1885C1H680JA01D RO4003C RC0603FR-071R8L yageo metal antenna 001aam119
Contextual Info: BGA7127 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier Rev. 3 — 3 December 2010 Product data sheet 1. Product profile 1.1 General description The MMIC is a one-stage amplifier, offered in a low-cost leadless surface-mount package. It delivers 28 dBm output power at 1 dB gain compression and a superior

PCB Rogers RO4003

Abstract: ro4003 RO4003C Rogers RO4003 GRM1885C1H1R0CZ01D GRM1885C1H680JA01D
Contextual Info: BGA7127 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier Rev. 2 — 13 September 2010 Product data sheet 1. Product profile 1.1 General description The MMIC is a one-stage amplifier, offered in a low-cost leadless surface-mount package. It delivers 28 dBm output power at 1 dB gain compression and a superior

ATC700a

Abstract: J141 mosfet atc700a capacitor ATC100A W625 78L08 AN01001 BLF2022-90 marking L5 D marking amplifier
Contextual Info: Application Note BLF2022-90; Linear LDMOS amplifier for 3GPP applications in the 2110-2170 MHz frequency band By Barney Arntz and Korné Vennema CONTENTS 1. 2. 3. 4. 5. 6. 7. 8. The device is available in both a standard as well as an earless SOT502A package.

Contextual Info: PTF 102022 LDMOS RF Power Field Effect Transistor 180 Watts, 2110–2170 MHz Description Key Features The PTF 102022 is a 180 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. A laterally double– diffused push–pull FET, it operates with 14 dB linear gain. Full gold

Contextual Info: y n y j x i y n CM O S 8 -B it 8 -C h a n n e l D a ta A c q u ia itio n S y s te m General Description The MAX161 and MX7581 are CMOS single-chip 8-bit, 8-charvnei data acquisition systems DAS . Each chip includes an 8-bit A/D converter, 8-channel multi­

Contextual Info: 3.3V 3.2Gbps SONET/SDH LASER DRIVER WITH 50Ω INPUT TERMINATION FEATURES • ■ ■ ■ ■ ■ ■ SY88932L EVALUATION BOARD DESCRIPTION Up to 3.2Gbps operation Modulation current to 60mA 50Ω input termination Rise/fall times < 70ps Programmable laser modulation voltage

11801B

Abstract: Agilent 70843B SMA-109 SY88932L TEKTRONIX 465
Contextual Info: 3.3V 3.2Gbps SONET/SDH LASER DRIVER WITH 50Ω INPUT TERMINATION FEATURES • ■ ■ ■ ■ ■ ■ SY88932L EVALUATION BOARD DESCRIPTION Up to 3.2Gbps operation Modulation current to 60mA 50Ω input termination Rise/fall times < 70ps Programmable laser modulation voltage

7808 voltage regulator

Abstract: BLF0810-180 top 8901
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D379 M3D461 BLF0810-180; BLF0810S-180 Base station LDMOS transistors Preliminary specification 2001 Nov 29 Philips Semiconductors Preliminary specification BLF0810-180; BLF0810S-180 Base station LDMOS transistors FEATURES

TRANSISTOR CW 7808

Abstract: cw 7808 7808 cw SOT502A 7808 voltage regulator ACPR400 BLF1049 transistor 7808
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D379 BLF1049 Base station LDMOS transistor Product specification Supersedes data of 2001 Dec 05 2003 May 14 Philips Semiconductors Product specification Base station LDMOS transistor BLF1049 FEATURES DESCRIPTION

cw 7808

Abstract: TRANSISTOR CW 7808 7808 voltage regulator 7808 cw MDB172 BLF0810-90 BLF0810S-90 MDB177 top 8901 gp 647
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D379 M3D461 BLF0810-90; BLF0810S-90 Base station LDMOS transistors Product specification Supersedes data of 2003 May 09 2003 Jun 12 Philips Semiconductors Product specification Base station LDMOS transistors BLF0810-90; BLF0810S-90

top 8901

Abstract: BLF0810-180 BLF0810S-180 7808 voltage regulator MBL10
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET e M3D379 M3D461 BLF0810-180; BLF0810S-180 Base station LDMOS transistors Preliminary specification 2002 Mar 05 Philips Semiconductors Preliminary specification Base station LDMOS transistors BLF0810-180; BLF0810S-180 FEATURES

7808 voltage regulator

Abstract: BLF0810-90 BLF0810S-90 MBL105
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET e M3D379 M3D461 BLF0810-90; BLF0810S-90 Base station LDMOS transistors Preliminary specification 2002 Mar 18 Philips Semiconductors Preliminary specification Base station LDMOS transistors BLF0810-90; BLF0810S-90 FEATURES

MBL105

Abstract: 7808 voltage regulator 7808 U2
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D379 M3D461 BLF0810-180; BLF0810S-180 Base station LDMOS transistors Preliminary specification 2002 Mar 01 Philips Semiconductors Preliminary specification BLF0810-180; BLF0810S-180 Base station LDMOS transistors FEATURES

C5750X7R1H106M

Abstract: SM270 BLF6G20-75 C3225X7R1H155M RF35
Contextual Info: BLF6G20-75 Power LDMOS transistor Rev. 01 — 6 March 2008 Preliminary data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.

cw 7808

Abstract: BLF0810-180 7808 voltage regulator MDB162 BLF0810S-180 MDB161 gp 538 e/ic 7808 pin out
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D379 M3D461 BLF0810-180; BLF0810S-180 Base station LDMOS transistors Product specification Supersedes data of 2003 May 09 2003 Jun 12 Philips Semiconductors Product specification Base station LDMOS transistors BLF0810-180; BLF0810S-180

top 8901

Abstract: BLF0810-180 7808 voltage regulator BLF0810S-180 BLF0910-140
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET e M3D379 M3D461 BLF0810-180; BLF0810S-180 Base station LDMOS transistors Preliminary specification 2002 Aug 02 Philips Semiconductors Preliminary specification Base station LDMOS transistors BLF0810-180; BLF0810S-180 FEATURES

BLF6G20

Abstract: BLF6G20-75 C3225X7R1H155M C5750X7R1H106M RF35 SM270 gp 752
Contextual Info: BLF6G20-75; BLF6G20LS-75 Power LDMOS transistor Rev. 02 — 9 February 2009 Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance