TRANSITOR RF 98 Search Results

Transistor BC 1078

Abstract: Transistor BC 1078 transistor transistor marking R2s TRANSISTOR MARKING YB BC 1078 transistor BF 245 C equivalent BI 425
Contextual Info: BFP620F E7764 XYs NPN Silicon Germanium RF Transistor Preliminary data
High gain low noise RF transistor 3
Small package 1.4 x 0.8 x 0.59 mm 2 4
Outstanding noise figure F = 0.7 dB at 1.8 GHz 1 Outstanding noise figure F = 1.3 dB at 6 GHz
Maximum stable gain

Contextual Info: BFP620F XYs NPN Silicon Germanium RF Transistor Preliminary data
High gain low noise RF transistor 3
Small package 1.4 x 0.8 x 0.59 mm 2 4
Outstanding noise figure F = 0.7 dB at 1.8 GHz 1 Outstanding noise figure F = 1.3 dB at 6 GHz
Maximum stable gain

3904 ic

Abstract: 3904 NPN k 4213 transistor k 4213 BFR340L3
Contextual Info: BFR340L3 NPN Silicon RF Transistor Preliminary data
Low voltage/ Low current operation 3
Transition frequency of 14 GHz
High insertion gain 1
Ideal for low current amplifiers and oscillators 2 ESD: Electrostatic discharge sensitive device, observe handling precaution!

transistor k 4213

Abstract: BFR340T transitor RF 98 SC75 BFR34* transistor
Contextual Info: BFR340T NPN Silicon RF Transistor 3 Preliminary data
Low voltage/ low current operation
Transition frequency of 14 GHz
High insertion gain 2
Ideal for low current amplifiers and oscillators 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!

MJE 131

Abstract: BFR340L3
Contextual Info: BFR340L3 NPN Silicon RF Transistor Preliminary data
Low voltage/ Low current operation 3
Transition frequency of 14 GHz
High insertion gain 1
Ideal for low current amplifiers and oscillators 2 ESD: Electrostatic discharge sensitive device, observe handling precaution!

TRANSISTOR MARKING NK

Abstract: transistor bf 271 p 605 transistor equivalent BFR340T
Contextual Info: BFR340T NPN Silicon RF Transistor 3 Preliminary data
Low voltage/ low current operation
Transition frequency of 14 GHz
High insertion gain 2
Ideal for low current amplifiers and oscillators 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BFP620 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.7 dB at 1.8 GHz

BFP620

Abstract: BFP620 acs BFP620 applications note GFT45
Contextual Info: BFP620 NPN Silicon Germanium RF Transistor 3 4
High gain low noise RF transistor
Provides outstanding performance for a wide range of wireless applications 2
Ideal for CDMA and WLAN applications
Outstanding noise figure F = 0.7 dB at 1.8 GHz 1 VPS05605

K 3677

Contextual Info: BFR340T NPN Silicon RF Transistor 3 Preliminary data
Low voltage/ low current operation
Transition frequency of 14 GHz
High insertion gain 2
Ideal for low current amplifiers and oscillators 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!

K 3677

Abstract: marking FA
Contextual Info: BFR340L3 NPN Silicon RF Transistor Preliminary data
Low voltage/ Low current operation 3
Transition frequency of 14 GHz
High insertion gain 1
Ideal for low current amplifiers and oscillators 2 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BFP620

Contextual Info: BFP620_E7764 NPN Silicon Germanium RF Transistor 3 4
High gain low noise RF transistor
Provides outstanding performance for a wide range of wireless applications 2
Ideal for CDMA and WLAN applications
Outstanding noise figure F = 0.7 dB at 1.8 GHz

Contextual Info: BFP620 NPN Silicon Germanium RF Transistor 3 4
High gain low noise RF transistor
Provides outstanding performance for a wide range of wireless applications 2
Ideal for CDMA and WLAN applications
Outstanding noise figure F = 0.7 dB at 1.8 GHz 1 VPS05605

marking r4s

Abstract: R4S BFP640 BFP640 BFP640 noise figure
Contextual Info: BFP640 3 NPN Silicon Germanium RF Transistor Preliminary data 4
High gain low noise RF transistor
Provides outstanding performance for a wide range of wireless applications 2
Ideal for CDMA and WLAN applications 1
Outstanding noise figure F = 0.65 dB at 1.8 GHz

infineon marking code L2

Contextual Info: BFR340T NPN Silicon RF Transistor* • Low voltage/ low current operation • Transition frequency of 14 GHz 2 3 1 • High insertion gain • Ideal for low current amplifiers and oscillators * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!

marking FA

Contextual Info: BFR340L3 NPN Silicon RF Transistor Preliminary data
Low voltage/ Low current operation 3
Transition frequency of 14 GHz
High insertion gain 1
Ideal for low current amplifiers and oscillators 2 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BFR340T

Contextual Info: BFR340T NPN Silicon RF Transistor 3 Preliminary data
Low voltage/ low current operation
Transition frequency of 14 GHz
High insertion gain 2
Ideal for low current amplifiers and oscillators 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!

R4S BFP640

Abstract: BFP640 VPS05605 4ghz s parameters transistor s parameters 4ghz
Contextual Info: BFP640 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz

transitor RF 98

Abstract: BFP620 applications note germanium transistor ac 128 BFP620
Contextual Info: BFP620 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.7 dB at 1.8 GHz

Contextual Info: BFR340F NPN Silicon RF Transistor Preliminary data
Low voltage/ low current operation 2 3
Transition frequency of 14 GHz
High insertion gain 1
Ideal for low current amplifiers and oscillators ESD: Electrostatic discharge sensitive device, observe handling precaution!

R4S BFP640

Abstract: BFP640 transistor ph 45 v marking r4s
Contextual Info: BFP640 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz

4ghz s parameters transistor

Contextual Info: BFP640 NPN Silicon Germanium RF Transistor 3 4 BFP640E/L6327 and E/L7764 • High gain low noise RF transistor • Provides outstanding performance 2 for a wide range of wireless applications • Ideal for CDMA and WLAN applications 1 VPS05605 • Outstanding noise figure F = 0.65 dB at 1.8 GHz

BFR340F

Abstract: G1217
Contextual Info: BFR340F NPN Silicon RF Transistor Preliminary data
Low voltage/ low current operation 2 3
Transition frequency of 14 GHz
High insertion gain 1
Ideal for low current amplifiers and oscillators ESD: Electrostatic discharge sensitive device, observe handling precaution!

BFP620

Abstract: BGA420 T-25 KF 25 transistor AF 2596
Contextual Info: BFP620 NPN Silicon Germanium RF Transistor • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 for a wide range of wireless applications 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.7 dB at 1.8 GHz

Contextual Info: BFP620 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.7 dB at 1.8 GHz