TRANSISTORS ON SEMICONDUCTOR Search Results

TRANSISTORS ON SEMICONDUCTOR Result Highlights (5)

Part	Manufacturer	Description	Download
MG800FXF1JMS3	Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET	Datasheet
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL	Datasheet
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL	Datasheet
TK065U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 38 A, 0.065 Ohm@10V, TOLL	Datasheet
TK5R1P08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 84 A, 0.0051 Ohm@10V, DPAK	Datasheet

TRANSISTORS ON SEMICONDUCTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2N6388 Abstract: 2N6387 Contextual Info: ON Semiconductor 2N6387 2N6388* Plastic Medium−Power Silicon Transistors *ON Semiconductor Preferred Device . . . designed for general−purpose amplifier and low−speed switching applications. DARLINGTON 8 AND 10 AMPERE NPN SILICON POWER TRANSISTORS	Original	2N6387 2N6388* 2N6387 2N6388 2N6387, O-220AB	PDF
MJL3281A MJL1302A Abstract: mjl3281a MJL3281A-D MJL1302A complementary npn-pnp power transistors Contextual Info: ON Semiconductort NPN MJL3281A* PNP MJL1302A* Complementary NPN-PNP Silicon Power Bipolar Transistor *ON Semiconductor Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS The MJL3281A and MJL1302A are PowerBaset power transistors	Original	MJL3281A* MJL1302A* MJL3281A MJL1302A r14525 MJL3281A/D MJL3281A MJL1302A MJL3281A-D complementary npn-pnp power transistors	PDF
MJ15023 Abstract: MJ15025 MJ1502 mj150 MJ-15025 transistor MJ15025 Contextual Info: ON Semiconductort PNP MJ15023 MJ15025 * Silicon Power Transistors The MJ15023 and MJ15025 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. *ON Semiconductor Preferred Device 16 AMPERE SILICON	Original	MJ15023 MJ15025 MJ15023 MJ15025 r14525 MJ15023/D MJ1502 mj150 MJ-15025 transistor MJ15025	PDF
2N5195 Contextual Info: ON Semiconductor 2N5194 2N5195* Silicon PNP Power Transistors . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to NPN 2N5191, 2N5192 *ON Semiconductor Preferred Device 4 AMPERE POWER TRANSISTORS SILICON PNP	Original	2N5191, 2N5192 2N5194 2N5195* 2N5193 2N5195	PDF
BLV 730 Abstract: COE82101 BLY90 BLW60 BLV25 BLW89 rf transformer philips india SC-10 amplifier Blw89 transistor blv 33 transistor Contextual Info: TECHNICAL PUBLICATION Considerations on efficiency of the RF power transistors in the different classes of operation COE82101 Philips Semiconductors Considerations on efficiency of the RF power transistors in the different classes of operation CONTENTS 1 SUMMARY	Original	COE82101 SCA57 BLV 730 COE82101 BLY90 BLW60 BLV25 BLW89 rf transformer philips india SC-10 amplifier Blw89 transistor blv 33 transistor	PDF
2N5194 Abstract: 2N5195 2N5191 2N5192 2N5193 Contextual Info: ON Semiconductor 2N5194 2N5195* Silicon PNP Power Transistors . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to NPN 2N5191, 2N5192 *ON Semiconductor Preferred Device 4 AMPERE POWER TRANSISTORS SILICON PNP	Original	2N5194 2N5195* 2N5191, 2N5192 r14525 2N5194/D 2N5194 2N5195 2N5191 2N5192 2N5193	PDF
MPS651 equivalent Abstract: transistor mps750 MPS65 MPS650 MPS651 MPS750 MPS751 Contextual Info: ON Semiconductort NPN MPS650 MPS651 * PNP MPS750 MPS751 * Amplifier Transistors COLLECTOR 3 COLLECTOR 3 2 BASE 2 BASE NPN PNP 1 EMITTER 1 EMITTER Voltage and current are negative for PNP transistors MAXIMUM RATINGS *ON Semiconductor Preferred Devices Symbol	Original	MPS650 MPS651 MPS750 MPS751 r14525 MPS650/D MPS651 equivalent transistor mps750 MPS65 MPS650 MPS651 MPS750 MPS751	PDF
MPS651 Abstract: mps650 mps-751 Contextual Info: ON Semiconductort NPN MPS650 MPS651 * PNP MPS750 MPS751 * Amplifier Transistors COLLECTOR 3 COLLECTOR 3 2 BASE 2 BASE NPN PNP 1 EMITTER 1 EMITTER Voltage and current are negative for PNP transistors MAXIMUM RATINGS *ON Semiconductor Preferred Devices Symbol	Original	MPS650 MPS750 MPS651 MPS751 MPS651 MPS751 226AL) MPS650, mps-751	PDF
828 npn Abstract: MPS6523 Contextual Info: ON Semiconductort NPN MPS6521* PNP MPS6523 Amplifier Transistors COLLECTOR 3 COLLECTOR 3 2 BASE 2 BASE Voltage and current are negative for PNP transistors 1 EMITTER 1 EMITTER MAXIMUM RATINGS *ON Semiconductor Preferred Device Rating Symbol Collector–Emitter Voltage	Original	MPS6521* MPS6523 MPS6521 MPS6523 828 npn	PDF
Diode HER 507 Abstract: an1543 AN1577 on semiconductor AN873 saturable core oscillator MJE18604D2 electronic ballast with npn transistor BUD43B BUD44D2 BUL44D2 Contextual Info: AN1577/D ON Semiconductor’s D2 Series Transistors for Fluorescent Converters Prepared by: Pascal M. Otero ON Semiconductor Applications Engineer http://onsemi.com APPLICATION NOTE INTRODUCTION Switching bipolar transistors are very popular in the fluorescent ballast field where they provide cheap designs.	Original	AN1577/D Diode HER 507 an1543 AN1577 on semiconductor AN873 saturable core oscillator MJE18604D2 electronic ballast with npn transistor BUD43B BUD44D2 BUL44D2	PDF
Contextual Info: Bipolar Transistors C OUT Combinational Digital Transistors (Bias Resistor Transistors) These devices include bias resistors on the semiconductor chip with the transistor. See the BRT diagram for orientation of resistors. Device Type R1 Ro V(BR)CEO IC mA	Original	MUN5211 MUN5212 MUN5213 MUN5214 MUN5215 MUN5216 MUN5230 MUN5231 MUN5232 MUN5233	PDF
be5l Abstract: AN5296 Application of the CA3018 CA3046 CA3045 CA3046 equivalent Harris CA3018 CA3045/3 Contextual Info: CA3045, CA3046 Semiconductor September 1998 General Purpose NPN Transistor Arrays File Number 341.4 Features • Two Matched Transistors The CA3045 and CA3046 each consist of five general purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to	OCR Scan	CA3045, CA3046 CA3045 CA3046 be5l AN5296 Application of the CA3018 CA3046 equivalent Harris CA3018 CA3045/3	PDF
1N5825 Abstract: 2N6497 MSD6100 Contextual Info: ON Semiconductor High Voltage NPN Silicon Power Transistors 2N6497 . . . designed for high voltage inverters, switching regulators and line–operated amplifier applications. Especially well suited for switching power supply applications. 5 AMPERE POWER TRANSISTORS	Original	2N6497 r14525 2N6497/D 1N5825 2N6497 MSD6100	PDF
2n6277 Contextual Info: 2N6274 2N6275 2N6277 * High-Power NPN Silicon Transistors . . . designed for use in industrial–military power amplifier and switching circuit applications. *ON Semiconductor Preferred Device • High Collector Emitter Sustaining — 50 AMPERE POWER TRANSISTORS	Original	2N6274 2N6275 2N6277 204AE r14525 2N6274/D 2n6277	PDF

MJE171 Abstract: MJE5730 MJE5731 MJE5731A MJE5732 TIP47 TIP50 Contextual Info: ON Semiconductor MJE5730 MJE5731 MJE5731A High Voltage PNP Silicon Power Transistors . . . designed for line operated audio output amplifier, SWITCHMODE t power supply drivers and other switching applications. • • • • 1.0 AMPERE POWER TRANSISTORS	Original	MJE5730 MJE5731 MJE5731A TIP47 TIP50 r14525 MJE5730/D MJE171 MJE5730 MJE5731 MJE5731A MJE5732	PDF
MJE5740 Abstract: transistor 2n222 2n222 TRANSISTOR 1N493 2N222 2N2905 MJE5742 MR826 OF 2n222 Contextual Info: ON Semiconductor MJE5740 MJE5742 * NPN Silicon Power Darlington Transistors The MJE5740 and MJE5742 Darlington transistors are designed for high–voltage power switching in inductive circuits. They are particularly suited for operation in applications such as:	Original	MJE5740 MJE5742 MJE5740 MJE5742 r14525 MJE5740/D transistor 2n222 2n222 TRANSISTOR 1N493 2N222 2N2905 MR826 OF 2n222	PDF
2N6667 Abstract: 2N6668 Contextual Info: ON Semiconductor 2N6667 2N6668 Darlington Silicon Power Transistors . . . designed for general−purpose amplifier and low speed switching applications. PNP SILICON DARLINGTON POWER TRANSISTORS 10 AMPERES 60 −80 VOLTS 65 WATTS • High DC Current Gain —	Original	2N6667 2N6668 2N6667 2N6668 O-220AB 2N6387, 2N6388 21A-09 O-220AB	PDF
2N6668 Abstract: 2N6667 1N5825 2N6387 2N6388 MSD6100 Contextual Info: ON Semiconductor 2N6667 2N6668 Darlington Silicon Power Transistors . . . designed for general–purpose amplifier and low speed switching applications. PNP SILICON DARLINGTON POWER TRANSISTORS 10 AMPERES 60–80 VOLTS 65 WATTS • High DC Current Gain —	Original	2N6667 2N6668 220AB 2N6387, 2N6388 r14525 2N6667/D 2N6668 2N6667 1N5825 2N6387 2N6388 MSD6100	PDF
BD787 Abstract: bd788 MSD6100 1N5825 Contextual Info: ON Semiconductort NPN BD787 Complementary Plastic Silicon Power Transistors PNP BD788 . . . designed for lower power audio amplifier and low current, high–speed switching applications. • Low Collector–Emitter Sustaining Voltage — • • 4 AMPERE POWER TRANSISTORS	Original	BD787 BD788 BD787, r14525 BD787/D BD787 bd788 MSD6100 1N5825	PDF
2N3773 Abstract: 2N6609 2N3773 NPN Audio Power AMP Transistor 2N3773 application 2N3773-D 2N3773 applications Contextual Info: ON Semiconductort NPN 2N3773* Complementary Silicon Power Transistors The 2N3773 and 2N6609 are PowerBaset power transistors designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switching	Original	2N3773* 2N3773 2N6609 2N6609 r14525 2N3773/D 2N3773 NPN Audio Power AMP Transistor 2N3773 application 2N3773-D 2N3773 applications	PDF
CA3046 equivalent Abstract: AN5296 Harris CA3018 CA3045 Contextual Info: CA3045, CA3046 Semiconductor September 1998 General Purpose NPN Transistor Arrays Features The CA3045 and CA3046 each consist of five general purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to	Original	CA3045, CA3046 CA3045 CA3046 500MHz CA3046 equivalent AN5296 Harris CA3018	PDF
lt 715 Abstract: Monolithic Transistor Pair NPN Monolithic Transistor Pair J14A LM3045 LM3045J LM3046 LM3046M LM3046N LM3086 Contextual Info: LM3045/LM3046/LM3086 National Semiconductor LM3045/LM3046/LM3086 Transistor Arrays General Description Features The LM3045, LM3046 and LM3086 each consist of five general purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally	OCR Scan	LM3045/LM3046/LM3086 LM3045, LM3046 LM3086 LM3045 14-lead bSD1124 TL/H/7950-7 bS01124 lt 715 Monolithic Transistor Pair NPN Monolithic Transistor Pair J14A LM3045J LM3046M LM3046N	PDF
D44VH Abstract: D44VH10 D45VH D45VH10 Contextual Info: ON Semiconductor NPN D44VH Complementary Silicon Power Transistors PNP D45VH These complementary silicon power transistors are designed for high–speed switching applications, such as switching regulators and high frequency inverters. The devices are also well–suited for drivers	Original	D44VH D45VH r14525 D44VH/D D44VH D44VH10 D45VH D45VH10	PDF
D44VH Abstract: D44VH10 D45VH D45VH10 Contextual Info: ON Semiconductort NPN D44VH Complementary Silicon Power Transistors PNP D45VH These complementary silicon power transistors are designed for high–speed switching applications, such as switching regulators and high frequency inverters. The devices are also well–suited for drivers	Original	D44VH D45VH r14525 D44VH/D D44VH D44VH10 D45VH D45VH10	PDF

TRANSISTORS ON SEMICONDUCTOR Search Results

TRANSISTORS ON SEMICONDUCTOR Result Highlights (5)

TRANSISTORS ON SEMICONDUCTOR Datasheets Context Search

2N6388

MJL3281A MJL1302A

MJ15023

2N5195

BLV 730

2N5194

MPS651 equivalent

MPS651

828 npn

Diode HER 507

be5l

1N5825

2n6277

MJE171

MJE5740

2N6667

2N6668

BD787

2N3773

CA3046 equivalent

lt 715

D44VH

D44VH