TRANSISTORS ON SEMICONDUCTOR Search Results

2N6388

Abstract: 2N6387
Contextual Info: ON Semiconductor 2N6387 2N6388* Plastic Medium−Power Silicon Transistors *ON Semiconductor Preferred Device . . . designed for general−purpose amplifier and low−speed switching applications. DARLINGTON 8 AND 10 AMPERE NPN SILICON POWER TRANSISTORS

MJL3281A MJL1302A

Abstract: mjl3281a MJL3281A-D MJL1302A complementary npn-pnp power transistors
Contextual Info: ON Semiconductort NPN MJL3281A* PNP MJL1302A* Complementary NPN-PNP Silicon Power Bipolar Transistor *ON Semiconductor Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS The MJL3281A and MJL1302A are PowerBaset power transistors

MJ15023

Abstract: MJ15025 MJ1502 mj150 MJ-15025 transistor MJ15025
Contextual Info: ON Semiconductort PNP MJ15023 MJ15025 * Silicon Power Transistors The MJ15023 and MJ15025 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. *ON Semiconductor Preferred Device 16 AMPERE SILICON

MJ15025

Contextual Info: ON Semiconductort PNP MJ15023 MJ15025 * Silicon Power Transistors The MJ15023 and MJ15025 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. *ON Semiconductor Preferred Device 16 AMPERE SILICON

mj15022

Abstract: mj15024 transistor MJ15024
Contextual Info: ON Semiconductort NPN MJ15022 MJ15024 * Silicon Power Transistors The MJ15022 and MJ15024 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. *ON Semiconductor Preferred Device 16 AMPERE SILICON

2N5195

Contextual Info: ON Semiconductor 2N5194 2N5195* Silicon PNP Power Transistors . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to NPN 2N5191, 2N5192 *ON Semiconductor Preferred Device 4 AMPERE POWER TRANSISTORS SILICON PNP

BLV 730

Abstract: COE82101 BLY90 BLW60 BLV25 BLW89 rf transformer philips india SC-10 amplifier Blw89 transistor blv 33 transistor
Contextual Info: TECHNICAL PUBLICATION Considerations on efficiency of the RF power transistors in the different classes of operation COE82101 Philips Semiconductors Considerations on efficiency of the RF power transistors in the different classes of operation CONTENTS 1 SUMMARY

2N5194

Abstract: 2N5195 2N5191 2N5192 2N5193
Contextual Info: ON Semiconductor 2N5194 2N5195* Silicon PNP Power Transistors . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to NPN 2N5191, 2N5192 *ON Semiconductor Preferred Device 4 AMPERE POWER TRANSISTORS SILICON PNP

transistor digital 47k 22k PNP NPN

Abstract: DTA115EET1
Contextual Info: Bipolar Transistors C OUT Digital Transistors (Bias Resistor Transistors) These devices include bias resistors on the semiconductor chip with the transistor. See the BRT diagram for orientation of resistors. NPN MUN2211T1 MUN2212T1 MUN2213T1 MUN2214T1 MUN2215T1

MPS651 equivalent

Abstract: transistor mps750 MPS65 MPS650 MPS651 MPS750 MPS751
Contextual Info: ON Semiconductort NPN MPS650 MPS651 * PNP MPS750 MPS751 * Amplifier Transistors COLLECTOR 3 COLLECTOR 3 2 BASE 2 BASE NPN PNP 1 EMITTER 1 EMITTER Voltage and current are negative for PNP transistors MAXIMUM RATINGS *ON Semiconductor Preferred Devices Symbol

MPS651

Abstract: MPS650
Contextual Info: ON Semiconductort NPN MPS650 MPS651 * PNP MPS750 MPS751 * Amplifier Transistors COLLECTOR 3 COLLECTOR 3 2 BASE 2 BASE NPN PNP 1 EMITTER 1 EMITTER Voltage and current are negative for PNP transistors MAXIMUM RATINGS *ON Semiconductor Preferred Devices Symbol

Contextual Info: ON Semiconductort NPN MPS6521* PNP MPS6523 Amplifier Transistors COLLECTOR 3 COLLECTOR 3 2 BASE 2 BASE Voltage and current are negative for PNP transistors 1 EMITTER 1 EMITTER MAXIMUM RATINGS *ON Semiconductor Preferred Device Rating Symbol Collector −Emitter Voltage

MPS651

Abstract: mps650 mps-751
Contextual Info: ON Semiconductort NPN MPS650 MPS651 * PNP MPS750 MPS751 * Amplifier Transistors COLLECTOR 3 COLLECTOR 3 2 BASE 2 BASE NPN PNP 1 EMITTER 1 EMITTER Voltage and current are negative for PNP transistors MAXIMUM RATINGS *ON Semiconductor Preferred Devices Symbol

828 npn

Abstract: MPS6523
Contextual Info: ON Semiconductort NPN MPS6521* PNP MPS6523 Amplifier Transistors COLLECTOR 3 COLLECTOR 3 2 BASE 2 BASE Voltage and current are negative for PNP transistors 1 EMITTER 1 EMITTER MAXIMUM RATINGS *ON Semiconductor Preferred Device Rating Symbol Collector–Emitter Voltage

Contextual Info: Bipolar Transistors C OUT Combinational Digital Transistors (Bias Resistor Transistors) These devices include bias resistors on the semiconductor chip with the transistor. See the BRT diagram for orientation of resistors. Device Type R1 Ro V(BR)CEO IC mA

MJ15020

Contextual Info: ON Semiconductort NPN MJ15020 * PNP * MJ15021 Complementary Silicon Power Transistors . . . designed for use as high frequency drivers in Audio Amplifiers. *ON Semiconductor Preferred Device • High Gain Complementary Silicon Power Transistors • Safe Operating Area 100% Tested 50 V, 3.0 A, 1.0 Sec.

MJL4281A

Contextual Info: Bipolar Power Transistors In Brief . . . Page ON Semiconductor’s broad line of Bipolar Power Transistors includes discrete and Darlington transistors in a variety of packages from the popular surface mount DPAK at 1.75 watts to the 250 watt TO-3. We also have

transistor digital 47k 22k PNP NPN

Abstract: Dual chip digital transistor 4.7k of Resistor 2.2K NSBC144EDXV6 NSBC143EDXV6 NSBA113EDXV6T1 NSBC113EDXV6T1 MUN5237DW1T1 MUN5136DW1T1
Contextual Info: Bipolar Transistors C OUT Dual Digital Transistors (Bias Resistor Transistors) These devices include bias resistors on the semiconductor chip with the transistor. See the BRT diagram for orientation of resistors. NPN PNP R1 B (IN) Ro V(BR)CEO IC mA Max hFE

be5l

Abstract: AN5296 Application of the CA3018 CA3046 CA3045 CA3046 equivalent Harris CA3018 CA3045/3
Contextual Info: CA3045, CA3046 Semiconductor September 1998 General Purpose NPN Transistor Arrays File Number 341.4 Features • Two Matched Transistors The CA3045 and CA3046 each consist of five general purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to

Contextual Info: ON Semiconductor High Voltage NPN Silicon Power Transistors 2N6497 . . . designed for high voltage inverters, switching regulators and line−operated amplifier applications. Especially well suited for switching power supply applications. 5 AMPERE POWER TRANSISTORS

1N5825

Abstract: 2N6497 MSD6100
Contextual Info: ON Semiconductor High Voltage NPN Silicon Power Transistors 2N6497 . . . designed for high voltage inverters, switching regulators and line–operated amplifier applications. Especially well suited for switching power supply applications. 5 AMPERE POWER TRANSISTORS

2n6277

Contextual Info: 2N6274 2N6275 2N6277 * High-Power NPN Silicon Transistors . . . designed for use in industrial–military power amplifier and switching circuit applications. *ON Semiconductor Preferred Device • High Collector Emitter Sustaining — 50 AMPERE POWER TRANSISTORS

RGAC

Abstract: GSI525 801 LCM IGT7E20CS G2GS gee transistor R relays
Contextual Info: Insulated-Gate Bipolar Transistors GS1525, IGT7E20CS F ile N u m b e r 2327 Current Sensing IGT Transistors Insulated Gate Bipolar Transistors 25 A, 500 V ros on = 0.105 O TERMINAL DIAGRAM Features: • Low Vce{sat) - 1.8 V typ. @ 25 A m Ultra-fast turn-on -1 SO ns typical

MJE5742 equivalent

Abstract: 2n222 TRANSISTOR MJE5742 MJE20 mje5740 2N2905 transistor 1N493
Contextual Info: ON Semiconductor MJE5740 MJE5742 * NPN Silicon Power Darlington Transistors The MJE5740 and MJE5742 Darlington transistors are designed for high−voltage power switching in inductive circuits. They are particularly suited for operation in applications such as: