Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTORS ON SEMICONDUCTOR Search Results

    TRANSISTORS ON SEMICONDUCTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLF404
    Rochester Electronics LLC UHF power MOS transistor PDF Buy
    BLF177
    Rochester Electronics LLC HF/VHF power MOS transistor PDF Buy
    BLF175C
    Rochester Electronics LLC HF/VHF power MOS transistor PDF Buy
    MG800FXF1JMS3
    Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Datasheet
    XPQ1R00AQB
    Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Datasheet

    TRANSISTORS ON SEMICONDUCTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2N6388

    Abstract: 2N6387
    Contextual Info: ON Semiconductor 2N6387 2N6388* Plastic Medium−Power Silicon Transistors *ON Semiconductor Preferred Device . . . designed for general−purpose amplifier and low−speed switching applications. DARLINGTON 8 AND 10 AMPERE NPN SILICON POWER TRANSISTORS


    Original
    2N6387 2N6388* 2N6387 2N6388 2N6387, O-220AB PDF

    MJL3281A MJL1302A

    Abstract: mjl3281a MJL3281A-D MJL1302A complementary npn-pnp power transistors
    Contextual Info: ON Semiconductort NPN MJL3281A* PNP MJL1302A* Complementary NPN-PNP Silicon Power Bipolar Transistor *ON Semiconductor Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS The MJL3281A and MJL1302A are PowerBaset power transistors


    Original
    MJL3281A* MJL1302A* MJL3281A MJL1302A r14525 MJL3281A/D MJL3281A MJL1302A MJL3281A-D complementary npn-pnp power transistors PDF

    MJ15023

    Abstract: MJ15025 MJ1502 mj150 MJ-15025 transistor MJ15025
    Contextual Info: ON Semiconductort PNP MJ15023 MJ15025 * Silicon Power Transistors The MJ15023 and MJ15025 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. *ON Semiconductor Preferred Device 16 AMPERE SILICON


    Original
    MJ15023 MJ15025 MJ15023 MJ15025 r14525 MJ15023/D MJ1502 mj150 MJ-15025 transistor MJ15025 PDF

    MJ15025

    Contextual Info: ON Semiconductort PNP MJ15023 MJ15025 * Silicon Power Transistors The MJ15023 and MJ15025 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. *ON Semiconductor Preferred Device 16 AMPERE SILICON


    Original
    MJ15023 MJ15025 MJ15025 PDF

    mj15022

    Abstract: mj15024 transistor MJ15024
    Contextual Info: ON Semiconductort NPN MJ15022 MJ15024 * Silicon Power Transistors The MJ15022 and MJ15024 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. *ON Semiconductor Preferred Device 16 AMPERE SILICON


    Original
    MJ15022 MJ15024 MJ15024 transistor MJ15024 PDF

    2N5195

    Contextual Info: ON Semiconductor 2N5194 2N5195* Silicon PNP Power Transistors . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to NPN 2N5191, 2N5192 *ON Semiconductor Preferred Device 4 AMPERE POWER TRANSISTORS SILICON PNP


    Original
    2N5191, 2N5192 2N5194 2N5195* 2N5193 2N5195 PDF

    BLV 730

    Abstract: COE82101 BLY90 BLW60 BLV25 BLW89 rf transformer philips india SC-10 amplifier Blw89 transistor blv 33 transistor
    Contextual Info: TECHNICAL PUBLICATION Considerations on efficiency of the RF power transistors in the different classes of operation COE82101 Philips Semiconductors Considerations on efficiency of the RF power transistors in the different classes of operation CONTENTS 1 SUMMARY


    Original
    COE82101 SCA57 BLV 730 COE82101 BLY90 BLW60 BLV25 BLW89 rf transformer philips india SC-10 amplifier Blw89 transistor blv 33 transistor PDF

    2N5194

    Abstract: 2N5195 2N5191 2N5192 2N5193
    Contextual Info: ON Semiconductor 2N5194 2N5195* Silicon PNP Power Transistors . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to NPN 2N5191, 2N5192 *ON Semiconductor Preferred Device 4 AMPERE POWER TRANSISTORS SILICON PNP


    Original
    2N5194 2N5195* 2N5191, 2N5192 r14525 2N5194/D 2N5194 2N5195 2N5191 2N5192 2N5193 PDF

    transistor digital 47k 22k PNP NPN

    Abstract: DTA115EET1
    Contextual Info: Bipolar Transistors C OUT Digital Transistors (Bias Resistor Transistors) These devices include bias resistors on the semiconductor chip with the transistor. See the BRT diagram for orientation of resistors. NPN MUN2211T1 MUN2212T1 MUN2213T1 MUN2214T1 MUN2215T1


    Original
    DTC144WET1 DTC114EM3T5G DTC124EM3T5G DTC144EM3T5G DTC114YM3T5G DTC114TM3T5G DTC143TM3T5G DTC123EM3T5G DTC143EM3T5G DTC143ZM3T5G transistor digital 47k 22k PNP NPN DTA115EET1 PDF

    MPS651 equivalent

    Abstract: transistor mps750 MPS65 MPS650 MPS651 MPS750 MPS751
    Contextual Info: ON Semiconductort NPN MPS650 MPS651 * PNP MPS750 MPS751 * Amplifier Transistors COLLECTOR 3 COLLECTOR 3 2 BASE 2 BASE NPN PNP 1 EMITTER 1 EMITTER Voltage and current are negative for PNP transistors MAXIMUM RATINGS *ON Semiconductor Preferred Devices Symbol


    Original
    MPS650 MPS651 MPS750 MPS751 r14525 MPS650/D MPS651 equivalent transistor mps750 MPS65 MPS650 MPS651 MPS750 MPS751 PDF

    MPS651

    Abstract: MPS650
    Contextual Info: ON Semiconductort NPN MPS650 MPS651 * PNP MPS750 MPS751 * Amplifier Transistors COLLECTOR 3 COLLECTOR 3 2 BASE 2 BASE NPN PNP 1 EMITTER 1 EMITTER Voltage and current are negative for PNP transistors MAXIMUM RATINGS *ON Semiconductor Preferred Devices Symbol


    Original
    MPS650 MPS750 MPS651 MPS751 MPS651 MPS751 O-226AL) MPS650, PDF

    Contextual Info: ON Semiconductort NPN MPS6521* PNP MPS6523 Amplifier Transistors COLLECTOR 3 COLLECTOR 3 2 BASE 2 BASE Voltage and current are negative for PNP transistors 1 EMITTER 1 EMITTER MAXIMUM RATINGS *ON Semiconductor Preferred Device Rating Symbol Collector −Emitter Voltage


    Original
    MPS6521* MPS6523 MPS6521 MPS6523 PDF

    MPS651

    Abstract: mps650 mps-751
    Contextual Info: ON Semiconductort NPN MPS650 MPS651 * PNP MPS750 MPS751 * Amplifier Transistors COLLECTOR 3 COLLECTOR 3 2 BASE 2 BASE NPN PNP 1 EMITTER 1 EMITTER Voltage and current are negative for PNP transistors MAXIMUM RATINGS *ON Semiconductor Preferred Devices Symbol


    Original
    MPS650 MPS750 MPS651 MPS751 MPS651 MPS751 226AL) MPS650, mps-751 PDF

    828 npn

    Abstract: MPS6523
    Contextual Info: ON Semiconductort NPN MPS6521* PNP MPS6523 Amplifier Transistors COLLECTOR 3 COLLECTOR 3 2 BASE 2 BASE Voltage and current are negative for PNP transistors 1 EMITTER 1 EMITTER MAXIMUM RATINGS *ON Semiconductor Preferred Device Rating Symbol Collector–Emitter Voltage


    Original
    MPS6521* MPS6523 MPS6521 MPS6523 828 npn PDF

    Contextual Info: Bipolar Transistors C OUT Combinational Digital Transistors (Bias Resistor Transistors) These devices include bias resistors on the semiconductor chip with the transistor. See the BRT diagram for orientation of resistors. Device Type R1 Ro V(BR)CEO IC mA


    Original
    MUN5211 MUN5212 MUN5213 MUN5214 MUN5215 MUN5216 MUN5230 MUN5231 MUN5232 MUN5233 PDF

    MJ15020

    Contextual Info: ON Semiconductort NPN MJ15020 * PNP * MJ15021 Complementary Silicon Power Transistors . . . designed for use as high frequency drivers in Audio Amplifiers. *ON Semiconductor Preferred Device • High Gain Complementary Silicon Power Transistors • Safe Operating Area 100% Tested 50 V, 3.0 A, 1.0 Sec.


    Original
    MJ15020 MJ15021 MJ15020 MJ15020/21 PDF

    MJL4281A

    Contextual Info: Bipolar Power Transistors In Brief . . . Page ON Semiconductor’s broad line of Bipolar Power Transistors includes discrete and Darlington transistors in a variety of packages from the popular surface mount DPAK at 1.75 watts to the 250 watt TO-3. We also have


    Original
    OT-223 MJD18002D2T4, MJE18002, MJE18004D24. NJD2873 MJL4302A/MJL4281A MJL31193/MJL31194 O-225AA O-126) O-220AB MJL4281A PDF

    transistor digital 47k 22k PNP NPN

    Abstract: Dual chip digital transistor 4.7k of Resistor 2.2K NSBC144EDXV6 NSBC143EDXV6 NSBA113EDXV6T1 NSBC113EDXV6T1 MUN5237DW1T1 MUN5136DW1T1
    Contextual Info: Bipolar Transistors C OUT Dual Digital Transistors (Bias Resistor Transistors) These devices include bias resistors on the semiconductor chip with the transistor. See the BRT diagram for orientation of resistors. NPN PNP R1 B (IN) Ro V(BR)CEO IC mA Max hFE


    Original
    OT-553 463B-01 transistor digital 47k 22k PNP NPN Dual chip digital transistor 4.7k of Resistor 2.2K NSBC144EDXV6 NSBC143EDXV6 NSBA113EDXV6T1 NSBC113EDXV6T1 MUN5237DW1T1 MUN5136DW1T1 PDF

    be5l

    Abstract: AN5296 Application of the CA3018 CA3046 CA3045 CA3046 equivalent Harris CA3018 CA3045/3
    Contextual Info: CA3045, CA3046 Semiconductor September 1998 General Purpose NPN Transistor Arrays File Number 341.4 Features • Two Matched Transistors The CA3045 and CA3046 each consist of five general purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to


    OCR Scan
    CA3045, CA3046 CA3045 CA3046 be5l AN5296 Application of the CA3018 CA3046 equivalent Harris CA3018 CA3045/3 PDF

    Contextual Info: ON Semiconductor High Voltage NPN Silicon Power Transistors 2N6497 . . . designed for high voltage inverters, switching regulators and line−operated amplifier applications. Especially well suited for switching power supply applications. 5 AMPERE POWER TRANSISTORS


    Original
    2N6497 PDF

    1N5825

    Abstract: 2N6497 MSD6100
    Contextual Info: ON Semiconductor High Voltage NPN Silicon Power Transistors 2N6497 . . . designed for high voltage inverters, switching regulators and line–operated amplifier applications. Especially well suited for switching power supply applications. 5 AMPERE POWER TRANSISTORS


    Original
    2N6497 r14525 2N6497/D 1N5825 2N6497 MSD6100 PDF

    2n6277

    Contextual Info: 2N6274 2N6275 2N6277 * High-Power NPN Silicon Transistors . . . designed for use in industrial–military power amplifier and switching circuit applications. *ON Semiconductor Preferred Device • High Collector Emitter Sustaining — 50 AMPERE POWER TRANSISTORS


    Original
    2N6274 2N6275 2N6277 204AE r14525 2N6274/D 2n6277 PDF

    RGAC

    Abstract: GSI525 801 LCM IGT7E20CS G2GS gee transistor R relays
    Contextual Info: Insulated-Gate Bipolar Transistors GS1525, IGT7E20CS F ile N u m b e r 2327 Current Sensing IGT Transistors Insulated Gate Bipolar Transistors 25 A, 500 V ros on = 0.105 O TERMINAL DIAGRAM Features: • Low Vce{sat) - 1.8 V typ. @ 25 A m Ultra-fast turn-on -1 SO ns typical


    OCR Scan
    GSI525, IGT7E20CS 92GS-44006R' GSI525 IGT7E20CS 92gs-44013 10-PULSE 92gs44017 RGAC 801 LCM G2GS gee transistor R relays PDF

    MJE5742 equivalent

    Abstract: 2n222 TRANSISTOR MJE5742 MJE20 mje5740 2N2905 transistor 1N493
    Contextual Info: ON Semiconductor MJE5740 MJE5742 * NPN Silicon Power Darlington Transistors The MJE5740 and MJE5742 Darlington transistors are designed for high−voltage power switching in inductive circuits. They are particularly suited for operation in applications such as:


    Original
    MJE5740 MJE5742 MJE5742 MJE5742 equivalent 2n222 TRANSISTOR MJE20 2N2905 transistor 1N493 PDF