TRANSISTORS H128 Search Results

TRANSISTORS H128 Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
2SC6026MFV		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA012		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini	Datasheet
TPCP8514		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8	Datasheet

TRANSISTORS H128 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
transistors H128 Abstract: H136 rg29B H-136 Contextual Info: Data Sheet No. PD-9.653A INTERNATIONAL RECTIFIER JO R AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS ;n N-CHANNEL IRHF7130 IRHF8130 2N7261 JANSRSN7S61 JANSHSN7S61 MEGA RAD HARD 100 Volt, 0.18Q, MEGA RAD HARD HEXFET Product Summary International Rectifier's MEGA RAD HARD Technology HEXFETs	OCR Scan	IRHF7130 IRHF8130 2N7261 JANSRSN7S61 JANSHSN7S61 1x105 H-137 IRHF7130, IRHF8130, transistors H128 H136 rg29B H-136	PDF
transistors H128 Contextual Info: Data Sheet No. PD-9.653A INTERNATIONAL RECTIFIER l l O R I AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS ;n N-CHANNEL IRHF7130 IRHFS13Q SN7S61 JANSRSN7S61 JANSH2N7S61 MEGA RAD HARD 100 Volt, 0.181], MEGA RAD HARD HEXFET Product Summary International Rectifier’s MEGA RAD HARD Technology HEXFETs	OCR Scan	IRHF7130 IRHFS13Q SN7S61 JANSRSN7S61 JANSH2N7S61 1x105 1x10s H-137 IRHF7130, IRHF8130, transistors H128	PDF
transistors H128 Abstract: 2N7261 IRHF7130 IRHF8130 JANSR2N7261 HG-18 Contextual Info: Data Sheet No. PD-9.653A INTERNATIONAL RECTIFIER l l O R l AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS IRHF7130 IRH FBI 3 0 ;n N-CHANNEL 2 IM-7261 JANSR2N7261 JANSHSN7S61 MEGA RAD HARD 100 Volt, 0.18 2, MEGA RAD HARD HEXFET International Rectifier’s MEGA RAD HARD Technology HEXFETs	OCR Scan	IRHF7130 IRHF8130 2N7261 JANSR2N7261 JANSHSN7S61 irhf8130 IRHF7130, IRHF8130, transistors H128 HG-18	PDF
Contextual Info: Characterization of atomic layer deposition HfO2, Al2O3, and plasmaenhanced chemical vapor deposition Si3N4 as metal–insulator–metal capacitor dielectric for GaAs HBT technology Jiro Yota,a Hong Shen, and Ravi Ramanathan Skyworks Solutions, Inc., 2427 W. Hillcrest Drive, Newbury Park, California 91320	Original		PDF
ALD HfO2 and Al2O3 as MIM Capacitor Dielectric for GaAs HBT Technology Contextual Info: ALD HfO2 and Al2O3 as MIM Capacitor Dielectric for GaAs HBT Technology Jiro Yota GaAs Technology, Skyworks Solutions, Inc. 2427 W. Hillcrest Drive, Newbury Park, CA 91320, USA jiro.yota@skyworksinc.com Hafnium dioxide HfO2 and aluminum oxide (Al2O3) films have	Original	01AC09 ALD HfO2 and Al2O3 as MIM Capacitor Dielectric for GaAs HBT Technology	PDF
integrated circuit BOSCH Abstract: bosch pm6 Contextual Info: Stellaris LM4F232 Evaluation Board User ’s Manual EK-LM4F2 32-UM-02 Copyrig ht 201 2 Te xas In strumen ts Copyright Copyright © 2011 Texas Instruments, Inc. All rights reserved. Stellaris and StellarisWare are registered trademarks of Texas Instruments. ARM and	Original	LM4F232 32-UM-02 integrated circuit BOSCH bosch pm6	PDF
Contextual Info: Tiva TM4C123G Development Board User's Guide Literature Number: SPMU357B August 2013 – Revised March 2014 Contents 1 DK-TM4C123G Overview 1.1 1.2 1.3 1.4 2 Hardware Description 2.1 2.2 2.3 2.4 2.5 3 . 4	Original	TM4C123G SPMU357B DK-TM4C123G DK-TM4C123G	PDF
h128 transistor Abstract: transistors H128 NH FUSE LINDER BSC 25-05 quivalent book Contextual Info: RadHard Field Programmable Gate Arrays F e a ftw s re s Guaranteed Total Dose Radiation Capability Low Single Event Upset Susceptibility High D oseR ateS urvivability Latch-Up Im m unity Guaranteed QML Qualified Devices Commercial Devices A vailablefor Prototyping and	OCR Scan	20-Pin h128 transistor transistors H128 NH FUSE LINDER BSC 25-05 quivalent book	PDF