TRANSISTORS FOR OSCILLATORS UHF Search Results

n3904

Abstract: CEB npn BF509 pnp BF959 BF240 CEB BF255 BF371 MOTOROLA MPSH81 BF241 CEB MPS3640
Contextual Info: SMALL-SIGNAL TRANSISTORS — PLASTIC continued RF Transistors The RF transistors are designed for Small Signal am plification from RF to VHF/UHF frequencies. They are also used as mixers and oscillators in the same frequency ranges. Several types are AGC characterised. The transistors are listed in

2N3866 MOTOROLA

Abstract: 2N2857 MOTOROLA MOTOROLA 2N5179 2N2857 MRF2369 2N5179 transistors for uhf oscillators transistor 2N5179 2N6603 2N4959 MOTOROLA
Contextual Info: RF SMALL-SIGNAL TRANSISTORS continued UHF and Microwave Oscillators The transistors listed below are for U H F and microwave oscillator applications as initial signal sources or as output stages of limited range transmitters. Devices are listed in order of increasing output power.

2N5436

Abstract: 2N5485 2N5485 MICRO ELECTRONICS 2N5434 2N5484 2N5486 2N5484 MICRO ELECTRONICS
Contextual Info: 2N5484 2N5485 2N5486 2N5434, 2N5485 and 2N5486 are N-Channel Junction Pfasttc T O -9 2 Field Effect designed Transistors. for oscillators VHF / UHF and They are amplifiers, analog mainly mixers, switches. Bottom View Source & O ta in interchengeebie ABSOLUTE MAXIMUM RATINGS

SIT Static Induction Transistor

Abstract: create uhf vhf tv matching transformer AR165S Granberg AR-165S power bjt advantages and disadvantages all mosfet vhf power amplifier narrow band rf POWER BJTs mrf154 amplifier bjt ce amplifier
Contextual Info: Order this document by AN1529/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1529 RF Power Circuit Concepts Using FETs and BJTs Prepared by: H. O. Granberg Principal Staff Engineer Motorola Semiconductor Products Sector Phoenix, Arizona Similarities and differences in RF power circuits using silicon Field Effect Transistors and Bipolar Junction Transistors are discussed along with their characteristics and performance. The discussion is limited to amplifiers and multipliers. Oscillators are usually designed for low signal levels, which are then amplified. Although power oscillators are

2N3303

Abstract: MM8520 2n6431 2n3736 MM420 2n3712 2N4209 2N3252 MOTOROLA 2n914 jantx 2n3506 jan
Contextual Info: 6367254 MOTOROLA SC XSTRS/R 80C 7 6 6 9 8 F tIOTOROLA SC -CXSTRS/R F> Âü D Difl t,3b?554 □ D 7 b b cifi 3 Low Frequency — Small-Signal Metal CASE 22-03.TO-18 . CASE 20-03 . TÔr72 Motorola Small-Signal Metal Can Transistors are designed for use as General-Purpose Amplifiers, High-Speed Switches, HighVoltage Amplifiers, Low-Level/Low-Noise Amplifiers, HighFrequency Oscillators, Choppers, and Darlingtons. These de­

N-Channel JFET FETs

Abstract: P-Channel RF Amplifier jfets MMBF5457LT1 MMBF5484LT1
Contextual Info: SOT-23 TRANSISTORS continued Unipolar (Field Effect) Transistors (JFETs) RF JFETs The following is a list of surface mount FETs which are intended for VHF/UHF RF amplifier applications. Pinout: 1-Drain, 2-Source, 3-Gate NF Device Y»s @ V ds Marking dB Typ

Motorola rectifiers zener diodes

Abstract: motorola diode smb diode zener motorola
Contextual Info: Table of Contents D iscre te P ro d u c t L in e s . 8C-70/SOT-323 D e vice s. RF Transistors .

transistors for uhf oscillators

Abstract: MOTOROLA LINEAR HF Microwave oscillators Amateur
Contextual Info: Table of Contents H Pag» Number RF Power TMOS FETs To 150 MHz HF/SSB . 1-3 1-3 To 225 MHz VHF AM /FM .

1am surface mount diode

Abstract: c845 2GM sot-23 transistor G1 TRANSISTOR SOT 23 PNP 2F PNP SOT23 P1F marking AS3 SOT223 p2f sot-223 c845 TO 92 SOT-223 P1f
Contextual Info: ON Semiconductor Bipolar Transistors Bipolar Transistors Continued Plastic-Encapsulated Transistors (Continued) Plastic-Encapsulated Multiple Transistors Plastic-Encapsulated High-Voltage Amplifier Transistors (Case 29-04 Ñ TO-226AA (TO-92) Ñ PNP) hFE @ IC

transistors for uhf oscillators

Abstract: MMBT2369LT1 sot-23 Marking 3D MMBTH69 transistors for oscillators uhf
Contextual Info: SOT-23 TRANSISTORS continued Switching Transistors The following tables are a listing of devices intended for high-speed, low saturation voltage, switching applications. These devices have very fast switching times and low output capacitance for optimized switching performance.

transistor marking 3em

Abstract: MMBTH10
Contextual Info: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 MMBTH10 Features • • • Designed for VHF/UHF Amplifier applications and high output VHF Oscillators High current gain bandwidth product Marking Code: 3EM NPN VHF/UHF

transistor marking 3em

Abstract: transistors for uhf oscillators marking code 3EM 400uAdc
Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBTH10 Features • • • Designed for VHF/UHF Amplifier applications and high output VHF Oscillators High current gain bandwidth product

MSC2404C

Abstract: MSC1621T1 RB
Contextual Info: SC-59 Devices_ Maximum die size 25 mil x 25 mil CASE 318D-03 General-Purpose Transistors Pinout: 1-Emitter, 2-Base, 3-Collector Devices are listed in order of descending breakdown voltage. hpE Device @ lc fT Marking V BR CEO Min Max mA

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBTH10 Features • • • Designed for VHF/UHF Amplifier applications and high output VHF Oscillators High current gain bandwidth product

i2c-bus "volume control"

Abstract: TDA3653B TDA3810 vga to tv converter ic audio video uhf transmitter circuit TDA8361 audio video uhf transmitter tda8362 tda vertical IC tv crt TDA2595
Contextual Info: Philips Semiconductors Semiconductors for Televsion and Video Systems Functional index Types added to the range since the last issue of the IC02 CD-ROM 1997 issue are shown in bold print. In addition, types marked with an asterisk (*) are also in this booklet.

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components MMBTH10 Features • • • • Designed for VHF/UHF Amplifier applications and high output VHF Oscillators

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components MMBTH10 Features • • • x Designed for VHF/UHF Amplifier applications and high output VHF Oscillators

GA900

Abstract: NPN RF Amplifier pnp 8 transistor array RF Bipolar Transistor DIP array resistors
Contextual Info: INFORMATION NOTE GENNUM C O R P O R A T I O N 510-22 RF BIPOLAR GA900 SEMICUSTOM ARRAY Gennum offers a 2 GHz bipolar uncommitted array that is designed for RF circuit applications required in low power mobile VHF / UHF communications. Using a linear process, the array is suitable for control circuitry,

BFT97

Abstract: Siemens 1985 BFT65 bfr91a siemens BFQ64P BFT98T BFS55A bf254 BFR96S
Contextual Info: S IE M E N S / SPCLt SEMICONDS ' ' ?QC D • fiS 3b 3E Q 0013325 1 ■ RF Transistors Type PNP= P NPN= N Typical Application epitaxial=E planar = PL E, PL Maximum Ratings Vcbo V VcEO (V) ^80 (V) (mA) fe ft (°C) 40 25 4 25 150 Plot (mW) (°C/W) 500 N Uncontrolled TV IF amplifier stages

Voltage Controlled Oscillators

Abstract: SAW Oscillators clapp oscillator bjt oscillator BJT phase shift oscillator rohde tuner rohde BB141 noise diode generator power bjt advantages and disadvantages
Contextual Info: VOLTAGE CONTROLLED OSCILLATORS INTRODUCTION The steady-state loop equations are In simple terms, an oscillator is an amplifier where sufficient energy is coupled back from the output to the input to become unstable and start oscillating. The output port then provides the wanted output

4327

Abstract: Am tuning DIODE KV2101 KV2201 KV2301 KV2401 1N4148 1N914 KV1401 KV1501
Contextual Info: TOC Application Notes HF-VHF-UHF VOLTAGE CONTROLLED OSCILLATORS USING HYPERABRUPT TUNING DIODES INTRODUCTION Modern systems require VCO’s voltage controlled oscillators with stringent frequency range and linearity requirements which can only be met by the use of

N-Channel JFET FETs

Abstract: ft960 Field Effect Transistors C847 P-Channel Depletion Mosfets P-Channel Depletion Mode FET p-channel jfet rf JFET with Yos MTP75N06HD BS17
Contextual Info: ON Semiconductor Field Effect Transistors and Power TMOS MOSFETs ¨ Field Effect Transistors Field Effect Transistors JFETs TMOS MOSFETs JFETs operate in the depletion mode. They are available in both P- and N-channel and are offered in both Through-hole and Surface Mount Packages. Applications include generalpurpose amplified, switches and choppers, and RF amplifiers and mixers. These devices are

marking NC sot23

Abstract: smd code marking sot23 RF Transistors sot-23 marking code LA SMD sot-23 MARKING CODE N C SMD MARKING CODE FEW SMD Transistors nc SOT SMD IC smd code marking 3 1 sot23 BF579
Contextual Info: HIGH FREQUENCY SMD TRANSISTORS DESCRIPTION •Philips Components high-frequency transistors fill the gap between general purpose transistors and broadband transistors by offering transition frequencies from a few hundred megahertz to about 1 gigahertz. Applications

SMD M1A

Abstract: marking g3p marking L2 SOT23 6 m1a smd smd marking code m1a L2 SOT23 BF660 smd transistors smd code marking sot23 smd transistors code
Contextual Info: High Frequency SMD Transistors High Frequency SMD® Transistors Description Mechanical Data Philips Components high-frequency transistors fill the gap between general purpose transistors and wideband transistors by offering transition frequencies from a few hun­