TRANSISTOR ZG Search Results
TRANSISTOR ZG Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| 2SC6026MFV | Toshiba Electronic Devices & Storage Corporation | NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 | Datasheet | ||
| TTC5886A | Toshiba Electronic Devices & Storage Corporation | NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold | Datasheet | ||
| TTA2097 | Toshiba Electronic Devices & Storage Corporation | PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold | Datasheet | ||
| TTA011 | Toshiba Electronic Devices & Storage Corporation | PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini | Datasheet | ||
| TPCP8513 | Toshiba Electronic Devices & Storage Corporation | NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8 | Datasheet |
TRANSISTOR ZG Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
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mn1280kgt50n60kdabc547 smd transistorkia1117af+6 | |
nf950
Abstract: transistor BF 37 transistor BF 236 TRANSISTOR 2SC 950 TRANSISTOR JC 539 2sc 1948 a Q62702-F553 transistor code mark NF
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023sbqsq62702-f553nf950transistor bf 37+5 | |
oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
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kia7900pitc7sh04fukic7sh04fusc604+16 | |
3055 transistor
Abstract: transistor 3055 3055 2N3055 2SC 2276 M 3055 power transistor n3055 2N3066 power transistor 3055 33S3
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d004t11q62702-u58005msaa35b05+10 | |
BF180
Abstract: s21b BF180 TRANSISTOR s parametres s22b bf 180 CE 470 10V J BF180 MAX S21B est 504
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bf180s21bbf180 transistors parametres+6 | |
ZG20
Abstract: ZG20-3 C250 Transistor AC 141 35 15 rail en 50022 ZG20-2
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zg20-1zg20-2zg20-3zg20+3 | |
transistor P1P
Abstract: BFR92 transistor bfr92 MSB003 p1p transistor code p1p MW27 choke 3122 108 20150 BFR90 BFT92
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73ilofigbbfr92bft92msb003+9 | |
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Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor BUK553-60A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. |
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buk553-60a/bbuk553t0220a | |
bdl 40
Abstract: l43 transistor transistor marking 2d ghz 9335 895 BFG480W
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bfg480wsca6004/00/02/pp1bdl 40+3 | |
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Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode logic level tield-ettect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology |
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buk78150-55ot223 | |
10VRContextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode logic level tield-ettect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technolgy |
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buk7880-55ot22310vr | |
RD70HVF1
Abstract: uhf power transistor 50W RD70HVF RD70HVF1-101 High frequency P MOS FET transistor 010PF 175MHz70W 071J RF Transistor Selection 100OHM
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rd70hvf1175mhz70w520mhzrd70hvf1-101+8 | |
transistor t06
Abstract: 828 TRANSISTOR equivalent
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rd00hhs130mhz48max53max+2 | |
RD70HVF1
Abstract: RD70HVF1-101 RD70HVF vhf power transistor 50W uhf power transistor 50W MITSUBISHI RF POWER MOS FET S 170 MOSFET TRANSISTOR RF Transistor s-parameter vhf 100OHM Rf power transistor mosfet
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rd70hvf1175mhz70w520mhzrd70hvf1-101+9 | |
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GRM39
Abstract: GRM708 RD05MMP1 diode GP 829 6030D
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rd05mmp1941mhzgrm39grm708+2 | |
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Contextual Info: < Silicon RF Power MOS FET Discrete > RD10MMS2 RoHS Compliance, Silicon MOSFET Power Transistor,870MHz,10W OUTLINEDRAWING DESCRIPTION RD10MMS2 RoHS-compliant product is a MOS FET type transistor specifically designed for 870MHz RF power amplifiers applications. |
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rd10mms2870mhz12wtyp800mhz-band | |
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Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor BUK552-100A/B Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level fieid-effect power transistor in a plastic envelope. The device is intended for use in |
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buk552-100a/bbuk552-100a-100b+1 | |
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Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding, |
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buk455-200a/bbuk455-200a-200b+2 | |
16HHF1
Abstract: RD16HHF1 TRANSISTOR D 471 RD 15 hf mitsubishi transistor d 1680 MOSFET 606 transistor d 1564 mosfet HF amplifier p 471 mosfet RD16HHF
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rd16hhf130mhz16hhf1transistor d 471+7 | |
LAL04NA
Abstract: T113 RD00HHS1 mosfet HF amplifier RD00HHS1-101 3M Touch Systems
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rd00hhs130mhzlal04nat113+3 | |
212J
Abstract: rd30hvf
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rd30hvf1175mhzrd30hvf1-101212j+1 | |
GP 819Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD05MMP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W a OUTLINE DRAWING RD05MMP1 is a MOS FET type transistor specifically designed for UHF RF power |
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rd05mmp1941mhzgp 819 | |
A 1469 mosfet
Abstract: RD30HVF1 transistor 38W 1599 transistor 100OHM MITSUBISHI RF POWER MOS FET TRANSISTOR D 1785 transistor D 1666 transistor 38W 3 pin
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rd30hvf1175mhza 1469 mosfettransistor 38w+6 | |
RD16HHF1
Abstract: RD16HHF1 application notes RD16HHF1-101 mosfet HF amplifier transistor d 1680 RD16HHF
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rd16hhf130mhzrd16hheaterrd16hhf1 application notes+4 | |