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    TRANSISTOR ZG Search Results

    TRANSISTOR ZG Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Datasheet
    TTC5886A
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Datasheet
    TTA2097
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Datasheet
    TTA011
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini Datasheet
    TPCP8513
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8 Datasheet

    TRANSISTOR ZG Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


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    mn1280kgt50n60kdabc547 smd transistorkia1117af+6transistor smd zgy6 smd transistormb4213y4 smd transistorsmd transistor zaakgt25n120nda PDF

    nf950

    Abstract: transistor BF 37 transistor BF 236 TRANSISTOR 2SC 950 TRANSISTOR JC 539 2sc 1948 a Q62702-F553 transistor code mark NF
    Contextual Info: 25C D • 523SbQS QQQMS3‘i 4 Wi SI ZG f PNP Silicon Planar Transistor ' SIEMENS AKTIEN6ESELLSCHAF >39 BF767 0- BF 767 is a PNP silicon planar transistor including passivated surface in TO 2 36 plastic package 23 A 3 DIN 41869 . The transistor is particularly suitable for use in low-noise,


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    023sbqsq62702-f553nf950transistor bf 37+5transistor bf 236transistor 2sc 950transistor jc 5392sc 1948 atransistor code mark nf PDF

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


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    kia7900pitc7sh04fukic7sh04fusc604+16kac3301qnm51943kia7042ap/aftc7sh08fukic7sh08fult1937oz960khb*9d5n20pmb4213kia78*pimn1280f10p048kia7812amje13007mb4213 equivalenttransistor smd n2 3j PDF

    3055 transistor

    Abstract: transistor 3055 3055 2N3055 2SC 2276 M 3055 power transistor n3055 2N3066 power transistor 3055 33S3
    Contextual Info: 2SC T> m flS3SbOS D004T11 * mZI ZG . T ~ 2 3 -/ 3 NPN Transistor for Powerful AF Output Stages 2 N 3055 -SIEMENS AKTIENGESELLSCHAF-2 N 3055 is a single diffused NPN silicon transistor in TO 3 case 3 A 2 DIN 41872). The collector is electrically connected to the case. The transistor is particularly suitable for


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    d004t11q62702-u58005msaa35b05+103055 transistortransistor 305530552n30552sc 2276m 3055 power transistorn30552n3066power transistor 305533s3 PDF

    BF180

    Abstract: s21b BF180 TRANSISTOR s parametres s22b bf 180 CE 470 10V J BF180 MAX S21B est 504
    Contextual Info: * B F 180 NPN SILICON TRANSISTOR, PLANAR TRANSISTOR NPN S ILIC IU M , PLAN A R % Preferred device D is p o s itif recom m andé The NPN planar transistor BF 180 is intended for use in UHF amplifier stages of T V receivers AGC controlled stages . Le transistor planar NPN BF 180 est destiné à être u ti­


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    bf180s21bbf180 transistors parametres+6s22bbf 180ce 470 10vj bf180max s21best 504 PDF

    ZG20

    Abstract: ZG20-3 C250 Transistor AC 141 35 15 rail en 50022 ZG20-2
    Contextual Info: PI6-OC Interface relays 141 • Relays with transistor output up to 500 mA / 70 V DC • 35 mm DIN rail mounting, EN 50022; screw terminals 0,2…4 mm2 • Interconncertion strips type ZG20 available Transistor - output Max. switching voltage Min. switching voltage


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    zg20-1zg20-2zg20-3zg20+3c250transistor ac 14135 15 rail en 50022 PDF

    transistor P1P

    Abstract: BFR92 transistor bfr92 MSB003 p1p transistor code p1p MW27 choke 3122 108 20150 BFR90 BFT92
    Contextual Info: Philips Semiconductors M 7 3 ilO flEb D D b lllfl 555 H P H IN Product specification NPN 5 GHz wideband transistor DESCRIPTION £ BFR92 PINNING NPN transistor in a plastic SOT23 envelope primarily intended for use in RF wideband amplifiers and oscillators. The transistor features


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    73ilofigbbfr92bft92msb003+925mitter711052ktransistor p1ptransistor bfr92p1p transistorcode p1pmw27choke 3122 108 20150bfr90 PDF

    Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor BUK553-60A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.


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    buk553-60a/bbuk553t0220a PDF

    bdl 40

    Abstract: l43 transistor transistor marking 2d ghz 9335 895 BFG480W
    Contextual Info: DISCRETE SEMICONDUCTORS sheet BFG480W NPN wideband transistor Preliminary specification Supersedes data of 1998 Mar 06 File under Discrete Semiconductors, SC14 Philips Semiconductors 1998 Jul 09 PHILIPS Philips Semiconductors Preliminary specification NPN wideband transistor


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    bfg480wsca6004/00/02/pp1bdl 40+3l43 transistortransistor marking 2d ghz9335 895 PDF

    Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode logic level tield-ettect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology


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    buk78150-55ot223 PDF

    10VR

    Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode logic level tield-ettect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technolgy


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    buk7880-55ot22310vr PDF

    RD70HVF1

    Abstract: uhf power transistor 50W RD70HVF RD70HVF1-101 High frequency P MOS FET transistor 010PF 175MHz70W 071J RF Transistor Selection 100OHM
    Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD70HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD70HVF1 is a MOS FET type transistor specifically


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    rd70hvf1175mhz70w520mhzrd70hvf1-101+8175mhzuhf power transistor 50wrd70hvfhigh frequency p mos fet transistor010pf071jrf transistor selection100ohm PDF

    transistor t06

    Abstract: 828 TRANSISTOR equivalent
    Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HHS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,0.3W DESCRIPTION OUTLINEDRAWING RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications.


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    rd00hhs130mhz48max53max+2transistor t06828 transistor equivalent PDF

    RD70HVF1

    Abstract: RD70HVF1-101 RD70HVF vhf power transistor 50W uhf power transistor 50W MITSUBISHI RF POWER MOS FET S 170 MOSFET TRANSISTOR RF Transistor s-parameter vhf 100OHM Rf power transistor mosfet
    Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD70HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD70HVF1 is a MOS FET type transistor specifically


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    rd70hvf1175mhz70w520mhzrd70hvf1-101+9175mhzrd70hvfvhf power transistor 50wuhf power transistor 50wmitsubishi rf power mos fets 170 mosfet transistorrf transistor s-parameter vhf100ohmrf power transistor mosfet PDF

    GRM39

    Abstract: GRM708 RD05MMP1 diode GP 829 6030D
    Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD05MMP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W a OUTLINE DRAWING RD05MMP1 is a MOS FET type transistor specifically designed for UHF RF power


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    rd05mmp1941mhzgrm39grm708+2diode gp 8296030d PDF

    Contextual Info: < Silicon RF Power MOS FET Discrete > RD10MMS2 RoHS Compliance, Silicon MOSFET Power Transistor,870MHz,10W OUTLINEDRAWING DESCRIPTION RD10MMS2 RoHS-compliant product is a MOS FET type transistor specifically designed for 870MHz RF power amplifiers applications.


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    rd10mms2870mhz12wtyp800mhz-band PDF

    Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor BUK552-100A/B Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level fieid-effect power transistor in a plastic envelope. The device is intended for use in


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    buk552-100a/bbuk552-100a-100b+1t0220ab PDF

    Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


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    buk455-200a/bbuk455-200a-200b+2t0220aboni25 PDF

    16HHF1

    Abstract: RD16HHF1 TRANSISTOR D 471 RD 15 hf mitsubishi transistor d 1680 MOSFET 606 transistor d 1564 mosfet HF amplifier p 471 mosfet RD16HHF
    Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD16HHF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,16W DESCRIPTION OUTLINE DRAWING RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.


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    rd16hhf130mhz16hhf1transistor d 471+7rd 15 hf mitsubishitransistor d 1680mosfet 606transistor d 1564mosfet hf amplifierp 471 mosfetrd16hhf PDF

    LAL04NA

    Abstract: T113 RD00HHS1 mosfet HF amplifier RD00HHS1-101 3M Touch Systems
    Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HHS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W OUTLINE DRAWING RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications.


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    rd00hhs130mhzlal04nat113+3mosfet hf amplifierrd00hhs1-1013m touch systems PDF

    212J

    Abstract: rd30hvf
    Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.


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    rd30hvf1175mhzrd30hvf1-101212j+1rd30hvf PDF

    GP 819

    Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD05MMP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W a OUTLINE DRAWING RD05MMP1 is a MOS FET type transistor specifically designed for UHF RF power


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    rd05mmp1941mhzgp 819 PDF

    A 1469 mosfet

    Abstract: RD30HVF1 transistor 38W 1599 transistor 100OHM MITSUBISHI RF POWER MOS FET TRANSISTOR D 1785 transistor D 1666 transistor 38W 3 pin
    Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE DRAWING RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.


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    rd30hvf1175mhza 1469 mosfettransistor 38w+61599 transistor100ohmmitsubishi rf power mos fettransistor d 1785transistor d 1666transistor 38w 3 pin PDF

    RD16HHF1

    Abstract: RD16HHF1 application notes RD16HHF1-101 mosfet HF amplifier transistor d 1680 RD16HHF
    Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD16HHF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W DESCRIPTION OUTLINE RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.


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    rd16hhf130mhzrd16hheaterrd16hhf1 application notes+4rd16hhf1-101mosfet hf amplifiertransistor d 1680rd16hhf PDF