TRANSISTOR ZC Search Results

Contextual Info: KST4124 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature

BFY80

Contextual Info: Silïzium-NPN-Epitaxial-Planar-Transistor Silicon NPN Epitaxial Pianar Transistor Anwendungen: Ansteuerung von Ziffernanzeigeröhren und Relais Applications: D river stages fo r in d ica to r tubes and relays Features: Besondere Merkmale: • Hohe Sperrspannung

marking code W1

Abstract: TRANSISTOR 3358 BFT92 BFT92W
Contextual Info: Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic, SOT323 S-mini package. The BFT92W uses the same crystal as the SOT23 version, BFT92. • Gold metallization ensures

VHB125-28

Abstract: ASI10731 j105 transistor
Contextual Info: VHB125-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB125-28 is NPN RF power transistor designed primarily for VHF communications. It utilizes Emitter ballasting to provide high VSWR handling capability. PACKAGE STYLE .500 6L FLG FEATURES: C A

HF220-28

Abstract: ASI10609
Contextual Info: HF220-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF220-28 is 28 V epitaxial planar transistor, designed for SSB and VHF communications. The device utilizes emitter ballasting for improved ruggedness and reliability. PACKAGE STYLE .500 4L FLG .112x45°

Contextual Info: GaAs IRED a PHOTO-TRANSISTOR TLP731,732 OFFICE MACHINE. HOUSEHOLD USE EQUIPMENT. SOLID STATE RELAY. SWITCHING POWER SUPPLY. The TOSHIBA TLP731 and TLP732 consist of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a six lead

10LZ

Abstract: IR 732 H
Contextual Info: TLP731,732 GaAs IRED S PHOTO-TRANSISTOR OFFICE MACHINE. HOUSEHOLD USE EQUIPMENT. SOLID STATE RELAY. SWITCHING POWER SUPPLY. The TOSHIBA TLP731 and TLP732 consist of a photo-transistor o ptically coupled to a gallium arsenide infrared emitting diode in a six lead

ULBM5

Abstract: ASI10680
Contextual Info: ULBM5 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM5 is a gold metallized RF power transistor designed for 12.5 V, Class-C UHF communications applications. It utilizes emitter ballasting to achieve high reliability & ruggedness. PACKAGE STYLE .280 4L STUD

BFT92

Abstract: "MARKING CODE W1*" GHz PNP transistor marking G SOT323 Transistor SOT323 Marking 87 SOT323 WM BFT92W marking L2 SOT23 6
Contextual Info: Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic, SOT323 S-mini package. The BFT92W uses the same crystal as the SOT23 version, BFT92. • Gold metallization ensures

ULBM45

Abstract: ASI10685
Contextual Info: ULBM45 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM45 is a gold metallized RF power transistor designed for 12.5 V class-C UHF communication applications. The device utilizes emitter ballasting to achieve high reliability and ruggedness. PACKAGE STYLE .500 6L FLG

Contextual Info: MS1263 RF & MICROWAVE TRANSISTOR UHF MOBILE APPLICATIONS Features • • • • • • 512 MHz 12.5 VOLTS POUT = 15 W MINIMUM GP = 7.8 dB INPUT MATCHED COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1263 is a NPN silicon RF power transistor designed for

transistor smd zc ce

Abstract: PMBT3904VS smd "code rc" transistor MARKING CODE ZC smd transistor zc Marking Code SMD zc NXP SMD TRANSISTOR MARKING CODE TRANSISTOR SMD MARKING CODE transistor smd zc 11 transistor smd code marking 101
Contextual Info: PMBT3904VS 40 V, 200 mA NPN/NPN switching transistor Rev. 01 — 8 July 2009 Product data sheet 1. Product profile 1.1 General description NPN/NPN double switching transistor in a SOT666 ultra small and flat lead Surface-Mounted Device SMD plastic package.

KST3904 sot-23

Abstract: KST3904 KST4124
Contextual Info: KST4124 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-Base Voltage C ollector-E m itter Voltage Em itter-Base Voltage C ollector C urrent C ollector D issipation Storage Tem perature

sot 23 marking code 2t

Abstract: marking DG sot-23 NPN transistor sot-23 MARKING CODE G1 MARKING NT SOT23 sot-23 l6 marking of m7 diodes sot-23 marking LC transistor ad 1v m6 marking transistor sot-23 C5 MARKING TRANSISTOR
Contextual Info: FERRANTI semiconductors HT2 NPN Silicon Planar High Voltage Transistor DESCRIPTION This plastic encapsulated transistor is designed for any application requiring high voltage capability at relatively low collector currents. Complementary to the HT3 Encapsulated in the popular SOT-23 package the device is

free transistor equivalent book

Abstract: free all transistor equivalent book transistor ic equivalent book
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBSS4350T 50 V low VCEsat NPN transistor Product specification 2002 Aug 08 Philips Semiconductors Product specification 50 V low VCEsat NPN transistor PBSS4350T FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage VCEsat and

VHB50-28S

Abstract: ASI10730
Contextual Info: VHB50-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB50-28S is an NPN power transistor designed for 25 V Class-C ground station transmitters, it utilizes emitter ballasting and gold metalization to provide optimum VSWR capability. PACKAGE STYLE .380 4L STUD

Contextual Info: MS1262 RF & MICROWAVE TRANSISTOR UHF MOBILE APPLICATIONS Features • • • • • • 512 MHz 12.5 VOLTS POUT = 15 W MINIMUM GP = 7.8 dB INPUT MATCHED COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1262 is a NPN silicon RF power transistor designed for

SD1434

Abstract: 2sd1434
Contextual Info: SD1434 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1434 is a gold metallized RF power transistor designed for 12.5 V class-C UHF communication applications. The device utilizes emitter ballasting to achieve high reliability and ruggedness. PACKAGE STYLE .500 6L FLG

CBSL6

Abstract: j1305 ASI10580
Contextual Info: CBSL6 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL6 is a gold metalized epitaxial silicon NPN transistor, designed for high linearity Class-AB cellular base station applications. It also operates in Class-C. PACKAGE STYLE .230 6L FLG A .040x45°

VHB40-28F

Abstract: TRANSISTOR j412 transistor J132 J442 J142 J705 J412 ASI10726 j132
Contextual Info: VHB40-28F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB40-28F is an epitaxial planar transistor, designed for 28 V FM Class C RF amplifiers utilized in base stations. This device utilizes ballasted emitter resistors to achieve optimum load mismatch capability.

VHB50-28F

Abstract: ASI10728
Contextual Info: VHB50-28F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB50-28F is an NPN power transistor designed for 28 V Class-C ground station transmitters, it utilizes emitter ballasting and gold metallization to provide optimum VSWR capability. PACKAGE STYLE .380 4L FLG

AVF600

Abstract: ASI10576
Contextual Info: AVF600 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2L FLG A The ASI AVF600 is a high power pulsed transistor, designed for JFF avionics applications. It is designed for operation under short pulse width & low cycle and capable of withstanding 25:1 load

ULBM10

Abstract: ASI10682 TRANSISTOR TC 137
Contextual Info: ULBM10 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM10 is a gold metallized RF power transistor designed for 12.5 V, Class-C application in 450-512 MHz frequency range. It utilizes emitter ballasting for high reliability and ruggedness. PACKAGE STYLE .280 4L STUD

Contextual Info: DISCRETE SEMICONDUCTORS DAT PBSS4350T 50 V; 3 A NPN low VCEsat BISS transistor Product data sheet Supersedes data of 2002 Aug 08 2004 Jan 09 NXP Semiconductors Product data sheet 50 V; 3 A NPN low VCEsat (BISS) transistor PBSS4350T QUICK REFERENCE DATA FEATURES