TRANSISTOR ZA Search Results

Contextual Info: 2SA2018 / 2SA2030 / 2SA2119K Transistors Low frequency transistor 2SA2018 / 2SA2030 / 2SA2119K The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. zDimensions Unit : mm zApplications For switching, for muting.

BUX100

Contextual Info: Philips Semiconductors Product specification Silicon diffused power transistor BUX100 GENERAL DESCRIPTION High voltage, high speed glass passivated npn power transistor in a SOT82 envelope intended for use in high frequency electronic lighting ballast applications.

Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2541 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

2SB1713

Abstract: T100
Contextual Info: 2SB1713 Transistors -3A / -12V Bipolar transistor 2SB1713 zApplications Low frequency amplification, driver zExternal dimensions Unit : mm MPT3 1.5 2.5 4.0 zFeatures 1) Collector current is high. 2) Low collector-emitter saturation voltage. (Typ. = -250mV, at IC = -1.5A, IB = -30mA)

2SD2679

Abstract: T100
Contextual Info: 2SD2679 Transistors 2A / 30V Bipolar transistor 2SD2679 zApplications Low frequency amplification, driver zExternal dimensions Unit : mm MPT3 1.5 2.5 4.0 zFeatures 1) Collector current is high. 2) Low collector-emitter saturation voltage. (VCE(sat) ≤ 350mV at IC = 1.5A, IB = 75mA)

Contextual Info: SP8K24 Transistor 4V Drive Nch+Nch MOSFET SP8K24 zStructure Silicon N-channel MOSFET zDimensions Unit : mm SOP8 5.0 1.75 0.4 (8) (5) (1) (4) 1pin mark 0.2 1.27 zApplications Power switching , DC / DC converter , Inverter Each lead has same dimensions zPackaging dimensions

2SK3019

Contextual Info: 2SK3019 Transistor 2.5V Drive Nch MOS FET 2SK3019 zExternal dimensions Unit : mm zStructure Silicon N-channel MOSFET EMT3 0.7 1.6 0.55 0.3 (1) 0.2 0.2 0.5 0.5 0.15 0.1Min. 0.8 (2) 1.6 (3) zApplications Interfacing, switching (30V, 100mA) 1.0 (1)Source zFeatures

2SK388

Abstract: 2sk38
Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 7T-MOS 2SK388 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. zasMAX. 0a3±Q2 FEATURES: . Low Drain-Source ON Resistance : RDS(o n )=0 -2 ^ ( TyP•)

2SC3906K

Abstract: 2SA1038S 2SA1514K 2SA1579 2SC2389S 2SC4102 SC-72 T106 2SC238
Contextual Info: 2SC4102 / 2SC3906K / 2SC2389S Transistors High-voltage Amplifier Transistor 120V, 50mA 2SC4102 / 2SC3906K / 2SC2389S zExternal dimensions (Unit : mm) zFeatures 1) High breakdown voltage. (BVCEO = 120V) 2) Complements the 2SA1579 / 2SA1514K / 2SA1038S. Tj

2SA20

Abstract: 2SC1740S 2SA1037AK 2SA1576A 2SA1774 2SA2029 2SA933AS 2SC2412K 2SC4081 2SC4617
Contextual Info: 2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029 / 2SA933AS Transistors General Purpose Transistor −50V, −0.15A 2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029 / 2SA933AS zExternal dimensions (Unit : mm) 2SA1576A 2.0 (1) 1.3 (2) 0.65 0.65 0.9 (3) 0.3 (2) 0.95 0.95

Contextual Info: SSTA06 / MMSTA06 Transistors NPN General Purpose Transistor SSTA06 / MMSTA06 zDimensions Unit : mm zFeatures 1) BVCEO < 80V ( IC=1mA) 2) Complements the SSTA56 / MMSTA56. SSTA06 zPackage, marking and packaging specifications Part No. SSTA06 MMSTA06 Packaging type

2SA1797

Abstract: 2SC4672 T100
Contextual Info: 2SA1797 Transistors Power Transistor −50V, −3A 2SA1797 zExternal dimensions (Unit : mm) zFeatures 1) Low saturation voltage. VCE (sat) = −0.35V (Max.) at IC / IB = −1A / −50mA. 2) Excellent DC current gain characteristics. 3) Complements the 2SC4672.

MMST6428

Abstract: T146
Contextual Info: MMST6428 Transistors NPN small signal transistor MMST6428 zFeatures 1 Ideal for switching and AF amplifier applications. zDimensions Unit : mm) MMST6428 2.9 zPackaging specifications 1.1 0.4 0.8 (3) Taping T146 Basic ordering unit (pieces) 3000 (2) (1) 0.95 0.95

Contextual Info: QSH29 Transistors Dual digital transistors QSH29 zFeatures In addition to the standard features of digital transistor, this transisitor has: 1 Low collector saturation voltage, typically VCE sat) =100mV for IC / IB=100mA / 1mA(Typ.) 2) High current gain, minimum

2SJ144

Contextual Info: TO SH IB A 2SJ144 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL JUNCTION TYPE 2 S J 1 44 Unit in mm AUDIO FREQUENCY AMPLIFIER APPLICATIONS ANALOG SWITCH APPLICATIONS 2.1 ±0.1 CONSTANT CURRENT APPLICATIONS IMPEDANCE CONVERTER APPLICATIONS . 1.25 ± 0.1

2SB1184

Abstract: 2SB1243 2SD1760 2SD1864
Contextual Info: 2SB1184 / 2SB1243 Transistors Power Transistor −60V, −3A 2SB1184 / 2SB1243 zExternal dimensions (Unit : mm) 2SB1243 6.5±0.2 5.1 +0.2 −0.1 C0.5 2.3 +0.2 −0.1 0.5±0.1 0.55±0.1 2.3±0.2 2.3±0.2 1.0±0.2 (1) (2) 14.5±0.5 0.65Max. 0.9 zStructure

Contextual Info: RTQ025P02 Transistor 2.5V Drive Pch MOS FET RTQ025P02 zExternal dimensions Unit : mm zStructure Silicon P-channel MOSFET TSMT6 zFeatures 1) Low On-resistance.(140mΩ at 2.5V) 2) High Power Package. 3) High speed switching. 4) Low voltage drive.(2.5V) 1.0MAX

2sB1237 transistor

Abstract: 2SB1237 2SA1515S 2SB1132 2SD1664 2SD1858 SC-72 T100
Contextual Info: 2SB1132 / 2SA1515S / 2SB1237 Transistors Medium Power Transistor −32V,−1A 2SB1132 / 2SA1515S / 2SB1237 zExternal dimensions (Unit : mm) 2SB1132 4+ − 0.2 1.0 + − 0.2 0.4 + − 0.1 1.5 + − 0.1 (2) (3) 0.5 + − 0.1 0.4 0.1 1.5 + − 0.1 3.0 + − 0.2

Contextual Info: RSQ030P03 Transistor 4V Drive Pch MOS FET RSQ030P03 zStructure Silicon P-channel MOS FET zExternal dimensions Unit : mm TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) Low On-resistance.(90mΩ at 4.5V) 2) High Power Package. (PD=1.25w) 3) High speed switching.

2SA20

Abstract: 2SA2088 2SC5876 T106
Contextual Info: 2SA2088 Transistors Medium power transistor −60V, −0.5A 2SA2088 zExternal dimensions (Unit : mm) UMT3 2.0 0.9 0.2 0.3 0.7 (1) 0.65 0.65 1.3 0.15 0.1Min. (2) 2.1 (3) 1.25 zFeatures 1) High speed switching. (Tf : Typ. : 60ns at IC = −500mA) 2) Low saturation voltage, typically

2SJ327

Abstract: P-CHANNEL NEC -MOS "Field Effect Transistor" 2SJ327 2SJ327-Z MEI-1202 TEA-1035
Contextual Info: DATA SHEET A MOS FIELD EFFECT POWER TRANSISTORS 2SJ327, 2SJ327-Z SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SJ327 is P-channel MOS Field Effect Transistor de­ in m illim eters signed for solenoid, motor and lamp driver.

l20pF

Contextual Info: TOSHIBA 3SK249 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3SK249 Unit in mm TV TUNER, UHF RF AMPLIFIER APPLICATIONS. 2. 1+0. 1 • Superior Cross Modulation Performance. • Low Reverse Transfer Capacitance. : Crss = 20fF Typ. • Low Noise Figure.

RSS110N03

Contextual Info: RSS110N03 Transistor Switching 30V, ±11A RSS110N03 zExternal dimensions (Unit : mm) zFeatures 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (SOP8). SOP8 5.0±0.2 (5) (1) (4) Max.1.75 1.5±0.1 0.15 (1)Source (2)Source