TRANSISTOR Y K 425 Search Results

Contextual Info: t • S Ss— NEC h MOS M O S Field Effect P o w e r Transistor 2SK1123 1 — MOS FET N T .m m 2SK1123 ü , N tj iz i ^ MOS F E T T", 5 V i T ^ IC <Dtfi W M m w w n n t t m ì È . K j ~y^-> y ^ T t o y fy m Z fr'fS<, K, A mm; X ^ 3 .2 ± 0.2 < y ^> 7 W ÌÌ> ià tlT ^ 'Ò f2 tÒ ,

Contextual Info: p CENTRAL SEMICONDUCTOR 5<Tw£T»í:¿° gc?K?te^!íEeííi5ee@p e@s2p . CEN-A44 CEN-A45 CEN-A45A NPN SILICON TRANSISTOR ' H I G H VOLTAGE General § @ in ig © ii^ y g f@ r € rp » JEDEC TO-92 CASE EBC 145 Adams Avenue Hauppauge, New York 1 1 7 8 8

ME0412

Abstract: 8822 TRANSISTOR me0411 ME0413 20MHZ 4102 transistor ME4103
Contextual Info: SMALL SIGNAL HIGH GAIN LOW NOISE NPN SILICON PLANAR EPITAXIAL TRANSISTOR MICRO ELECTRONICS FEATURES • H ig h G a i n h p g . 1 0 0 - 6 0 0 • E x c e lle n t L i n e a r i t y F ro m lO ^ A • H ig h B re a k d o w n V o l t a g e B V

yx 861

Abstract: zener FR diode 2ao2 diode BAND
Contextual Info: n 1. v ï — v - n Package List m Discrete Semiconductor Devices — □ - V 'à •+- I "N « A te irv u m « -£ o K S *- « > fa’ V •fr -w Panasonic - 219 - il H Item S M ini 5-pin S M ini(4-pin) U n it mm 2 UP 1 .1 0 4251 -i 1 25 îO 1_ 0 425

m28 transistor

Abstract: 2SC2340 NE56900 NE56953E NE56954 NE56987 S21E
Contextual Info: N E C / .CALIFORNIA 1SE D N E ' H b427414 DQ01331 3 NE56900 NE56953E NE56954 NE56987 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • A M P L IF IE R P E R F O R M A N C E : 550 mW with 11.5 d B Gain at 2 GHz 425 mW with 7.5 d B Gain at 4 G H z

transistor T K 2056

Abstract: K 2056 transistor transistor K 2056
Contextual Info: SANYO SEMICONDUCTOR 12E CORP D | 7 T ci 7 D 7 t 1 0 0 0 S S 0 0 g 32S C 4256 SS2SC4271 Silicon Transistor Silicon Transistor ' High Voltage Switching Applications Very High-Oefinrtion CR T Display Applications JEDEC: T 022 0 package JEDEC: T0126 package High breakdown voltage

LXY Series

Abstract: mitsubishi microcomputers 4-bit 20P2N-A M34250E2FP M34250E2-XXXFP M34250M2 M34250M2-XXXFP PU01 f1813
Contextual Info: MITSUBISHI MICROCOMPUTERS 4250 Group SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER DESCRIPTION The 4250 Group is a 4-bit single-chip microcomputer designed with CMOS technology. Its CPU is that of the 720 series using a simple instruction set. The computer is equipped with one 8-bit

SOT103

Abstract: BFR591 transistor SOT103 transistor 1038 SOT-103 BFR59 NPN planar RF transistor transistor k 425
Contextual Info: Philips Semiconductors Preliminary specification " NPN 8 GHz wideband transistor PHILIPS INTERNATIONAL FEATURES • BFR591 711Qfi2b ÜOM5Sfll 425 H P H I N PINNING High power gain PIN • Low noise figure • SbE 7 =3 3 -0 5 1 High transition frequency • Gold metallization ensures

Helipot

Abstract: JAN2N5431 MIL-STD-750-Test capacitor ttc 342 J3 DIODE ST JANTX2N5431 20.000H unijunction application note
Contextual Info: MIL-S-19500/425 USAF 23 Sept 1969 V Mil S Sii CONDUCTOR DEVICE- TRANSISTOR. PN. SILICON. UNIJUNCTION JAN2N5431, and JANTX2N5431 1. SCOPE Scope. - This speciflcation covers the detail requirements for a PN, silicon, unijunction transistor. The prefis "TX” is used

0.2MF CAPACITOR

Abstract: TIL111 equivalent til111 DI-425
Contextual Info: D DIONICS INC. DI-425 65 RU SH M O RE S T R E E T W EST B U R Y , NEW Y O R K 11590 5161 997-7474 HIGH VOLTAGE Dl 425 SW ITC H ED A.C. B R ID G E C IR C U IT Monolithic Silicon Dielectrically Isolated Integrated Circuits The Dl 425 is a high voltage, monolithic dielec­

2SD425

Abstract: toshiba 2sd425 2SB556 251C 2SB55 2SB555 2SD426 3g2q
Contextual Info: ^ 'jD y N P N E M m w L W M h ^ y v x ? SILICON NPN TRIPLE DIFFUSED MESA TRANSISTOR o n n m o m 2 s d 425 À 2 s d 42G U n i t i n mm m Pover A m p lifie r A p p lic a tio n s 02&OUAK. 0 2 1 .0 :*MAX. n • Irto : P C= 10 0 W 2 S D 4 2 5 ,2 S D 4 2 6 v j> t

L3317

Contextual Info: O rd e rin g n u m b e r: E 42589 CMOS LEI F SA\YO I LC7365N, 7366N N a2SB y L i D T M F T o n e G e n e r a to r fo r P u s h b a tto n T e le p h o n e T h e LC 7 3 G 5 N , 73G6N ere D T M F lone g en erato r L S t s for use in pushbuLton telephones. T h e LC 73G 5N con tains * k eyb o ard scan c irc u it Bnd the L C 7 3 S 6 N c a n d ire c t accept the Output from 0

2N4256

Abstract: 2N4425 NPN, PNP for 500ma, 30v 2b0-b 2N4424 2N5174 2N5232 2N5232A 2N5249A 2N5305
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10m A V h FE M in.-Max. @ IC , V C E (V> (V) Max. Typical (M H z) C cb@ 10V 1 MHz Typical (Pf) @ 25° C (mW) fT V CE(SAT) l c . *B PT 2N 4256 2N4424 2N 4425 N PN NPN

ST2165

Contextual Info: C î'ii SLOTTED OPTICAL SWITCH OPTOELECTRONICS OPB866N51/OPB866N55 PACKAGE DIMENSIONS SEE NOTE 3 125 3.18 OPTICAL CENTERLINE .345 (8.78) I_ -.4 85 (12.32) r .110 (2.79) ft .425 (1 0.al) MIN i~~r .425 (10.79) ^ PIN 1 IDENTIFICATION 220 (5.59) DESCRIPTION

Contextual Info: 375Vin / 28Vout / 600Watts DC-DC Converter Module Model Number V375A28C600A Features • • • • • • • • • • • DC input range: 250 - 425V Input surge withstand: 550V for 100ms DC output: 28V Programmable output: 10 to 110% Regulation: ±0.2% no load to full load

BCM 4359

Abstract: transistor 4287 AB transistor 3901
Contextual Info: 6091788 MICRO ELECTRONICS CORJP_ ña 82D 006^8 DEI bCm 7flfl D 7^* D 0 0 Gb 4 fl □ "7 J " TYPE V C E SA T FE C ASE Pd (mW) 'c (mA) V CEO (V) min max 'c (mA) max (V) ‘c (mA) fT min (MHz) Cob N.F. max max (pF) (dB) 3694 4249 4250 5138 N P P P T O -92A

Contextual Info: 375Vin / 5Vout / 400Watts DC-DC Converter Module Model Number V375A5C400A Features • • • • • • • • • • • DC input range: 250 - 425V Input surge withstand: 550V for 100ms DC output: 5V Programmable output: 10 to 110% Regulation: ±0.2% no load to full load

BLP05M7200

Contextual Info: BLP05M7200 Power LDMOS transistor Rev. 1 — 6 September 2012 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for various applications such as ISM and RF plasma lighting at frequencies from 425 MHz to 450 MHz. Table 1.

AED02902

Contextual Info: Low Drop Voltage Tracker TLE 4251 Features • • • • • • • • • Output tracking tolerance ≤ ±0.2% 400 mA output current capability Enable Function Very low current consumption in OFF mode Wide operation range: up to 40 V Wide temperature range: -40 °C ≤ Tj ≤ 150 °C

Contextual Info: BLP05M7200 Power LDMOS transistor Rev. 2 — 18 November 2013 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for various applications such as ISM and RF plasma lighting at frequencies from 425 MHz to 450 MHz. Table 1.

Contextual Info: 375Vin / 28Vout / 600Watts DC-DC Converter Module Features • DC input range: 250 - 425V • Input surge withstand: 550V for 100ms • DC output: 28V • Programmable output: 10 to 110% • Regulation: ±0.2% no load to full load • Efficiency: 89% • Maximum operating temperature:

Contextual Info: 375Vin / 5Vout / 400Watts DC-DC Converter Module Features • DC input range: 250 - 425V • Input surge withstand: 550V for 100ms • DC output: 5V • Programmable output: 10 to 110% • Regulation: ±0.2% no load to full load • Efficiency: 83.5% • Maximum operating temperature:

N13634

Contextual Info: 375Vin / 24Vout / 600Watts DC-DC Converter Module Model Number V375A24C600A Features • • • • • • • • • • • DC input range: 250 - 425V Input surge withstand: 550V for 100ms DC output: 24V Programmable output: 10 to 110% Regulation: ±0.2% no load to full load

PMEG2020EA

Abstract: smps repair circuit TEA1620P 40V NPN embedded package TEA1622 pecl clock so8 30v 3a schottky barrier type rectifiers TEA1623P smps repair smd transistor bq
Contextual Info: New MultiMarket Products Quarterly highlights Semiconductors VOLUME 3 • ISSUE 2 M AY 2 0 0 4 ■ In this issue: Welcome to the latest issue of Philips’ New MultiMarket Products – Quarterly highlights. P 1 PCK12429 25 - 400 MHz differential PECL clock generator