TRANSISTOR Y 330 Search Results

Contextual Info: MAX786RCAI Linear ICs Dual-Output Current-Mode SMPS Circuit status Military/High-RelN Maximum Frequency Hz 330k UV Lockout (Y/N)No Soft Start (Y/N)Yes Output Config Output Transistor Current (A) Output Transistor Voltage (V) Supply Voltage Minimum (V)5.5

Contextual Info: MAX797CSE Linear ICs Dual-Output Voltage-Mode SMPS Circuit status Military/High-RelN Maximum Frequency Hz 330k UV Lockout (Y/N)No Soft Start (Y/N)Yes Output Config Output Transistor Current (A) Output Transistor Voltage (V) Supply Voltage Minimum (V)4.5 Supply Voltage Maximum (V)30

Contextual Info: MAX786CAI Linear ICs Dual-Output Current-Mode SMPS Circuit status Military/High-RelN Maximum Frequency Hz 330k UV Lockout (Y/N)No Soft Start (Y/N)Yes Output Config Output Transistor Current (A) Output Transistor Voltage (V) Supply Voltage Minimum (V)5.5 Supply Voltage Maximum (V)30

MAX783CBX

Contextual Info: MAX783CBX Linear ICs Dual-Output Voltage-Mode SMPS Circuit status Military/High-RelN Maximum Frequency Hz 330k UV Lockout (Y/N)Yes Soft Start (Y/N)No Output Config Output Transistor Current (A) Output Transistor Voltage (V) Supply Voltage Minimum (V)5.5 Supply Voltage Maximum (V)30

Contextual Info: MAX798CPE Linear ICs Dual-Output Voltage-Mode SMPS Circuit status Military/High-RelN Maximum Frequency Hz 330k UV Lockout (Y/N)No Soft Start (Y/N)Yes Output Config Output Transistor Current (A) Output Transistor Voltage (V) Supply Voltage Minimum (V)4.5 Supply Voltage Maximum (V)30

Contextual Info: MITSUBISHI RF POWER TRANSISTOR tiEM'iñe'J 0017bfi0 Mbl NPN EPITAXIAL PLANAR T Y P E DISCRIPTION OUTLINE DRAWING 2SC3241 is a silicon NPN epitaxial planar type transistor specifically designed for high power amplifiers in HF band. Dimensions in mm FEATU RES

transistor smd za

Abstract: smd transistor 5c l smd transistor 5c transistor smd KL 5F smd transistor BUD700D SMD Transistor 5f SMD Transistor BM smd transistor kl smd transistor TN
Contextual Info: _ BUD700D v is h a y ▼ Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Monolithic integrated C-E-free-wheel diode • Very low switching losses • Simple-sWitch-Off Transistor SWOT • Very low dynamic saturation

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2097 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2097 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in HF band mobile radio applications. Dimensions in mm R1 FEATURES •

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC269S NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2695 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in UHF band mobile radio applications. D im ensions in m m FEATURES •

2SC2097 equivalent

Abstract: 2sc2097 transistor 2SC2097
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2097 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2097 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in HF band mobile radio applications. D im ensions in m m R1 FEATURES

Mitsubishi transistor databook

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3022 NPN E P IT A X IA L PLANAR T Y P E DESCRIPTION 2SC3022 is a silicon NPN epitaxial planar type transistor specifi­ cally designed for UHF high power amplifier applications. OUTLINE DRAWING Dimensions in mm FEATURES •

2SC2134

Contextual Info: MITSUBISHI RF POWER TRANSISTOR bZinflBR QQ175flb TTT NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2134 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in V H F band 24 to 28 volts operation Dimensions in mm

520MH

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC269S NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2695 is a silicon NPN epitaxial planar typ e transistor designed Dimensions in mm fo r RF power am plifiers in U H F band m obile radio applications. FEATURES

nec 2571

Abstract: NEC D 553 C nec 2571 4 pin NEC IC D 553 C 3771 nec nec 716 nec 1565 transistor marking T83 ghz
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4957 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise, High Gain PACKAGE DIMENSIONS • Low Voltage Operation in millimeters • Low Feedback Capacitance Cre = 0 .3 p F T Y P .

2SC2134

Abstract: RF NPN POWER TRANSISTOR 60w vhf power transistor 50W
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2134 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2134 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in V H F band 24 to 28 volts operation Dimensions in mm R1 applications.

Contextual Info: MITSUBISHI RF POWER TRANSISTOR DD l T b T ? 7bS 2SC3908 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC3908 is a silicon NPN epitaxial planar type transistor designed for HF power amplifiers applications. Dimensions in mm FEATURES • High power gain: Gpe ^ 11.5dB

Contextual Info: N AUER PHILIPS/DISCRETE b lE bb53cl31 DDEflEbM DEI BU508A BU508D y v I> SILICON DIFFUSED POWER TRANSISTOR High-voltage, high-speed switching npn transistor in SOT93A envelope intended for use in horizontal deflection circuits o f colour television receivers. The BU508D has an integrated efficiency diode.

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3019 NPN EPITAXIAL PLANAR T Y P E DISCRETION OUTLINE DRAWING 2SC3019 is silicon NPN epitaxial planar typ e transistor Dimensions in mm designed fo r RF power am plifiers in U H F band. FEATURES • • High power gain: Gpe

2sc2904 TRANSISTOR

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2904 NPN EPITAXIAL PLANAR T Y P E DISCRETION OUTLINE DRAWING 2SC2904 is a silicon NPN epitaxial planar type transistor specifically designed for high power amplifiers in HF band. Dim ensions in mm R1 FEATURES • High gain: Gpe ^ 1 1 -5dB

transistor buv 90

Abstract: BCY 85 Q60203-Y66 BCY 66
Contextual Info: N PN -Transistor fü r rauscharm e N F -V o rs tu fe n BCY 66 BCY 66 ist ein epitaktischer NPN-Silizium-Planar-Transistor im Gehäuse 18 A3 DIN 41876 TO-18 . Der Kollektor ist mit dem Gehäuse elektrisch verbunden. Der Transistor ist für besonders rauscharme NF-Vorstufen vorgesehen. (Komplementärtransistor dazu B C Y 67).

2SC3019

Abstract: 4D6T T02E
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3019 NPN EPITAXIAL PLANAR T Y P E DISCRIPTION 2SC3019 is silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers in UHF band. FEATURES • • • • • High power gain: Gpe ^ 14dB @P0 = 0.5W, f = 520MHz, V cc = 12.5V

BLX92A

Abstract: BLX92 em 179 sfe 5,5 ma IEC134 transistor IR 944
Contextual Info: PHILIPS INTERNATIONAL HIE D E3 TllOfiEb 0027Ö37 G E3P HI N BLX92A M A IN T E N A N C E T Y P E U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B o r C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe

2SC2097

Abstract: transistor 91 330 T40E
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2097 NPN E P IT A X IA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2097 is a silicon NPN epitaxial planar type transistor designed Dimensions in mm fo r RF power am p lifie rs in HF band m ob ile radio applications. R1

Contextual Info: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE46100 NE46134 NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER FEATURES_ • HIGH DYNAMIC RANGE • LOW IM DISTORTION: -4 0 dBc • HIGH OUTPUT POWER : 2 7 .5 dBm at T Y P • LOW NOISE: 1.5 dB T Y P at 5 0 0 M H z