TRANSISTOR WZ Search Results

BLX95

Abstract: BB313 L1042 blx95a TRIMMER capacitor 10-40 pf D45 TRANSISTOR philips 2222 trimmer IEC134 Miniature Ceramic Plate Capacitors 2222 philips 15Kg-cm
Contextual Info: » • bbsa'm oas'ìbHi dhs N AMER PHILIPS/DISCRETE IAPX BLX95 A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the u.h.f. frequency range for supply voltages up to 28 V. The transistor is resistance stabilized and is

transistor tt 2222

Abstract: TT 2222 npn TRIMMER capacitor 5-60 pF TT 2222 ic TT 2222 BLU99 4312 020 36642
Contextual Info: bSE T> 711002b GGti27fi7 0^7 « P H I N BLU99 BLU99/SL PHILIPS INTERNATIONAL U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in m obile radio transm itters in the u.h.f. band. The transistor is also very suitable fo r application in the 900 MHz m obile radio band.

Contextual Info: MP4104 T O SH IB A TOSHIBA POWER TRANSISTOR MODULE SILICON NPN EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 4 IN 1 MP4104 INDUSTRIAL APPLICATIONS Unit in mm HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING. 25.2 ± 0 .2

transistor tt 2222

Abstract: BLY93A TT 2222 ic TT 2222 TT 2222 npn T-33-73 LY93A ROTA E Series IEC134 SOT-56
Contextual Info: PHILIPS INTERNATIONAL MIE D B 711üaEb ÜQ2flQ0ci 1 B P H I N A J L B LLY93 Y93A M A IN T EN A N C E TYPE T~33~/3 V.H.F. POWER TRANSISTOR '\ N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industriar and military transmitters with a supply voltage of 28 V, The transistor is resistance stabilized. Every tran­

DM74S189

Abstract: DM74S189AN DM74S189N
Contextual Info: DM54S189/DM74S189/DM54S189A/DM74S189A fjgx National ÆüàSemiconductor DM54S189/DM74S189 64-Bit 16 x 4 TRI-STATE RAM DM54S189A/DM74S189A High Speed 64-Bit TRI-STATE RAM General Description These 64-bit active-element memories are monolithic Schottky-clamped transistor-transistor logic (TTL) arrays or­

NEC IC D 553 C

Abstract: ic 723 cn NEC JAPAN 3504 transistor on 4409
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5180 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PACKAGE DIMENSIONS • Low current consumption and high gain Units : mm i S 2ie 12 = 12 dB T Y P . @ Vce = 2 V, lc = 7 mA, f = 2 G H z

DM74S189

Contextual Info: DM54S189/DM7 4S189/DM54S189 A/DM7 4S189 A 53!] National dtjA Semiconductor DM54S189/DM74S189 64-Bit 16 x 4 TRI-STATE RAM DM54S189A/DM74S189A High Speed 64-Bit TRI-STATE RAM General Description These 64-bit active-element memories are monolithic Sctiottky-clamped transistor-transistor logic (TTL) arrays or­

TLP721

Abstract: Fx10050 11-5B2 E67349 VDE0884 tlp721gb
Contextual Info: T O SH IB A TLP721 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP721 OFFICE MACHINE HOUSEHOLD USE EQUIPMENT SOLID STATE RELAY SWITCHING POWER SUPPLY Unit in mm TI ir3 4 The TOSHIBA TLP721 consists of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a four lead plastic

mdd 1051

Abstract: circuit k 3683 916c Transistors marking WZ ke marking transistor transistor xl 3001 S9614
Contextual Info: . . . . . . . .l: :;. . . . . . . . . . . . . . . . . .’. . . . . . . . MIIA3.1950W9B 12 Ne.rch 1970 SUPERSEDING MIL.T.1950W9A 12 hub? 19s9 MSLITARY SPfXfFffXTfON .-. SFADCONDUCTOR DEVICE, TRANSISTOR, PNP, GBfMi14NIUM, HIGH-FREQUENCY

marking code FV

Abstract: Marking WZS
Contextual Info: SIEMENS BCR 142W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit « Built in bias resistor R1=22ki2, Ft2=47k£2 Pin Configuration WZs t =B Q62702-C2289 2=E Package o Marking Ordering Code BCR 142W II CO Type

Q62702-C2289

Contextual Info: BCR 142W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22kΩ, R2=47kΩ Type Marking Ordering Code Pin Configuration BCR 142W WZs 1=B Q62702-C2289 Package 2=E 3=C SOT-323

B 647 AC transistor

Abstract: 142 transistor Marking WZS
Contextual Info: SIEMENS BCR 142 NPN Silicon Digital Transistor * Switching circuit, inverter, interface circuit, drver circuit • Built in bias resistor R i=22kii, R2=47ki2 Marking Ordering Code BCR 142 WZs Pin Configuration Q62702-C2259 1=B 2=E Package o II CO Type SOT-23

C2259

Abstract: Q62702-C2259
Contextual Info: BCR 142 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, drver circuit • Built in bias resistor R1=22kΩ, R2=47kΩ Type Marking Ordering Code Pin Configuration BCR 142 WZs 1=B Q62702-C2259 Package 2=E 3=C SOT-23 Maximum Ratings

MARKING WZ

Abstract: marking code 10 sot23 BCR142 BCR142F BCR142FL3 BCR142L3 BCR142T BCR142W SC75
Contextual Info: BCR142. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22kΩ, R2 =47kΩ BCR142/F/L3 BCR142T/W C 3 R1 R2 1 B 2 E EHA07184 Type Marking Pin Configuration BCR142 WZs 1=B 2=E

BCR142

Abstract: BCR142F BCR142FL3 BCR142L3 BCR142T BCR142W SC75
Contextual Info: BCR142. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22kΩ, R2 =47kΩ BCR142/F/L3 BCR142T/W C 3 R1 R2 1 B 2 E EHA07184 Type Marking Pin Configuration BCR142 WZs 1=B 2=E

MARKING WZ

Abstract: BCR142 BCR142F BCR142FL3 BCR142L3 BCR142T BCR142W SC75 marking code TS
Contextual Info: BCR142. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22kΩ, R2 =47kΩ BCR142/F/L3 BCR142T/W C 3 R1 R2 1 B 2 E EHA07184 Type Marking Pin Configuration BCR142 WZs 1=B 2=E

Contextual Info: S IE M E N S BCR 142W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor Ri=22ki2, R2=47kfl ire □ CÜ J S E Ordering Code Pin Configuration WZs Q62702-C2289 1 =B Package H CO ro

VSO05561

Contextual Info: BCR 142W NPN Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22kΩ, R 2=47kΩ 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR 142W WZs Pin Configuration 1=B 2=E Package

142T

Abstract: SC-75
Contextual Info: BCR 142T NPN Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22kΩ, R 2=47kΩ 2 C 3 1 R1 VPS05996 R2 1 2 B E EHA07184 Type Marking BCR 142T WZs Pin Configuration 1=B 2=E Package

BCR142T

Abstract: SC75
Contextual Info: BCR142T NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=22k, R 2=47k 2 C 3 1 R1 VPS05996 R2 1 2 B E EHA07184 Type Marking BCR142T WZs Pin Configuration 1=B 2=E Package 3=C SC75

BCR142W

Abstract: VSO05561
Contextual Info: BCR142W NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=22k, R 2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR142W WZs Pin Configuration 1=B 2=E Package 3=C SOT323

BCR142W

Abstract: VSO05561
Contextual Info: BCR142W NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=22k, R 2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR142W WZs Pin Configuration 1=B 2=E Package 3=C SOT323

BCR142T

Abstract: SC75
Contextual Info: BCR142T NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=22k, R 2=47k 2 C 3 1 R1 VPS05996 R2 1 2 B E EHA07184 Type Marking BCR142T WZs Pin Configuration 1=B 2=E Package 3=C SC75

BCR142

Contextual Info: BCR142 NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=22k, R 2=47k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR142 WZs Pin Configuration 1=B 2=E Package 3=C SOT23